FDS9435A-NBAD008 [ONSEMI]
P 沟道，PowerTrench® MOSFET，30V，-5.3A，50mΩ;
| 型号： | FDS9435A-NBAD008 |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，PowerTrench® MOSFET，30V，-5.3A，50mΩ |
| 文件： | 总6页 (文件大小：247K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDS9435A
30V P-Channel PowerTrenchÒ Ò
MOSFET
Features
· –5.3 A, –30 V
RDS(ON) = 50 mW @ VGS = –10 V
RDS(ON) = 80 mW @ VGS = –4.5 V
General Description
This P-Channel MOSFET is a rugged gate version of ON
Semiconductor’s advanced PowerTrench process. It has
been optimized for power management applications requiring
a wide range of gave drive voltage ratings (4.5V – 25V).
· Low gate charge
· Fast switching speed
· High performance trench technology for extremely
low RDS(ON)
Applications
· Power management
· Load switch
· High power and current handling capability
· Battery protection
D
5
6
7
8
4
3
2
1
D
D
D
SO-8
G
S
S
S
Pin 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–30
V
VGSS
ID
Gate-Source Voltage
±25
V
A
Drain Current – Continuous
– Pulsed
(Note 1a)
–5.3
–50
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
2.5
W
1.2
1
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +175
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1c)
(Note 1)
50
125
25
RqJA
RqJA
RqJC
°C/W
°C/W
°C/W
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
2500 units
FDS9435A
FDS9435A
13’’
12mm
Ó2001 Semiconductor Components Industries, LLC.
October-2017, Rev. 4
Publication Order Number:
FDS9435A /D
Electrical Characteristics
TA= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 mA
–30
V
Breakdown Voltage Temperature
Coefficient
DBVDSS
DTJ
ID = –250 mA, Referenced to 25°C
VDS = –24 V, VGS = 0 V
–23
mV/°C
mA
IDSS
Zero Gate Voltage Drain Current
–1
IGSSF
IGSSR
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VGS = 25 V,
VGS = –25 V
VDS = 0 V
VDS = 0 V
100
–100
nA
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
VDS = VGS, ID = –250 mA
–1
–1.7
4.5
–3
V
DVGS(th)
DTJ
RDS(on)
ID = –250 mA, Referenced to 25°C
mV/°C
mW
VGS = –10 V,
ID = –5.3 A
42
65
57
50
80
77
VGS = –4.5 V, ID = –4 A
VGS= –10 V, ID = –5.3 A, TJ=125°C
ID(on)
gFS
On–State Drain Current
VGS = –10 V,
VDS = –5 V,
VDS = –5 V
ID = –5.3 A
–25
A
S
Forward Transconductance
10
Dynamic Characteristics
C
Input Capacitance
528
132
70
pF
pF
pF
iss
VDS = –15 V,
f = 1.0 MHz
V GS = 0 V,
Coss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
VDD = –15 V,
VGS = –10 V,
ID = –1 A,
RGEN = 6 W
7
13
14
9
14
24
25
17
14
ns
ns
ns
ns
Qg
VDS = –15 V,
VGS = –10 V
ID = –4 A,
10
2.2
2
nC
nC
nC
Qgs
Qgd
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–2.1
–1.2
A
V
Drain–Source Diode Forward
VSD
VGS = 0 V, IS = –2.1 A (Note 2)
–0.8
Voltage
Notes:
1. RqJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RqJCis guaranteed by design while RqCAis determined by the user's board design.
a) 50°C/W when
mounted on a 1in
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
2
2
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%
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2
Typical Characteristics
30
2
1.8
1.6
1.4
1.2
1
VGS = -10V
-6.0V
-5.0V
VGS=-4.0V
-4.5V
20
10
0
-4.5V
-4.0V
-5.0V
-6.0V
-7.0V
-3.5V
-8.0V
-10V
-3.0V
0.8
0
1
2
3
4
5
6
0
6
12
18
24
30
-VDS , DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.25
1.6
1.4
1.2
1
ID = -5.3A
VGS = -10V
ID = -2.8A
0.2
0.15
0.1
TA = 125oC
TA = 25oC
0.8
0.6
0.05
0
-50
-25
0
25
50
75
100
125
150
175
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
15
100
25oC
VDS = -5V
VGS =0V
10
TA = -55oC
12
9
TA = 125oC
125oC
1
25oC
0.1
6
-55oC
0.01
3
0.001
0
0.0001
1
1.5
2
2.5
3
3.5
4
4.5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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3
Typical Characteristics
10
800
700
600
500
400
300
200
100
0
ID = -5.3A
f = 1 MHz
VGS = 0 V
VDS = -5V
-10V
8
6
4
2
0
-15V
CISS
COSS
CRSS
0
2
4
6
8
10
0
5
10
15
20
25
30
Qg, GATE CHARGE (nC)
-V DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
50
40
30
20
10
0
SINGLE PULSE
100
s
m
Rq = 125°C/W
JA
RDS(ON) LIMIT
1ms
10ms
100ms
1s
TA = 25°C
1
10s
DC
VGS = -10V
SINGLE PULSE
RqJA = 125oC/W
TA = 25oC
0.1
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
-VDS , DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RqJA(t) = r(t) + RqJA
RqJA = 125oC/W
0.2
0.1
0.1
0.05
0.02
P(pk)
t1
0.01
t2
0.01
TJ - TA = P * R JA(t)
q
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
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4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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