FDT3612 [ONSEMI]
N 沟道，Power Trench® MOSFET，100V，3.7A，120mΩ;
| 型号： | FDT3612 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，Power Trench® MOSFET，100V，3.7A，120mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：209K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – N-Channel,
POWERTRENCH)
V
R
MAX
I MAX
D
DSS
DS(ON)
100 V
120 mW @ 10 V
130 mW @ 6 V
3.7 A
100 V
FDT3612
D
S
General Description
D
This N−Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge
G
SOT−223
CASE 318H−01
than other MOSFETs with comparable R
specifications.
DS(ON)
MARKING DIAGRAM
The result is a MOSFET that is easy and safer to drive (even at very
high frequencies), and DC/DC power supply designs with higher
overall efficiency.
AYW
3612G
G
Features
• 3.7 A, 100 V
1
♦ R
♦ R
= 120 mW @ V = 10 V
GS
DS(ON)
= 130 mW @ V = 6 V
DS(ON)
GS
A
Y
W
3612
G
= Assembly Location
= Year
= Work Week
= Specific Device Code
= Pb−Free Package
• Fast Switching Speed
• Low Gate Charge (14 nC Typ)
• High Performance Trench Technology for Extremely Low R
DS(ON)
• High Power and Current Handling Capability in a Widely Used
Surface Mount Package.
(Note: Microdot may be in either location)
• This is a Pb−Free Device
PINOUT DIAGRAM
Applications
D
• DC/DC Converter
• Power Management
ABSOLUTE MAXIMUM RATINGS (T = 25°C, unless otherwise noted)
A
D
S
G
Symbol
Parameter
Drain−Source Voltage
Value
100
20
Unit
V
V
DSS
GSS
V
Gate−Source Voltage
V
ORDERING INFORMATION
I
D
Drain Current
A
− Continuous (Note 1a)
3.7
20
†
Device
FDT3612
Shipping
Package
− Pulsed
4000 / Tape & Reel
SOT−223
(Pb−Free)
P
D
Maximum Power Dissipation
(Note 1a)
W
3.0
1.3
1.1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
(Note 1b)
(Note 1c)
T , T
Operating and Storage Temperature Range −55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
September, 2022 − Rev. 4
FDT3612/D
FDT3612
THERMAL CHARACTERISTICS (T = 25°C, unless otherwise noted)
A
Symbol
Parameter
Thermal Resistance, Junction−to−Ambient (Note 1a)
Thermal Resistance, Junction−to−Case (Note 1)
Max
42
Unit
°C/W
°C/W
R
q
JA
R
12
q
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
DRAIN−SOURCE AVALANCHE RATINGS (Note 2)
W
Drain−Source Avalanche Energy
Drain−Source Avalanche Current
Single Pulse, V = 50 V, I = 3.7 A
−
−
−
−
90
mJ
A
DSS
DD
D
I
3.7
AR
OFF CHARACTERISTICS
BV
Drain−Source Breakdown Voltage
V
= 0 V, I = 250 mA
100
−
−
−
V
DSS
GS
D
Breakdown Voltage Temperature
Coefficient
I
D
= 250 mA, Referenced to 25°C
−
106
mV/°C
DBVDSS
DTJ
I
Zero Gate Voltage Drain Current
Gate−Body Leakage, Forward
Gate−Body Leakage, Reverse
V
DS
V
GS
V
GS
= 80 V, V = 0 V
−
−
−
−
−
−
10
mA
nA
nA
DSS
GS
I
= 20 V, V = 0 V
100
GSSF
GSSR
DS
I
= −20 V, V = 0 V
−100
DS
ON CHARACTERISTICS (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V , I = 250 mA
2
2.5
4
V
GS D
Gate Threshold Voltage Temperature
Coefficient
I
D
= 250 mA, Referenced to 25°C
−
−6
−
mV/°C
DVGS(th)
DTJ
R
Static Drain−Source On−Resistance
V
GS
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 3.7 A
−
−
88
94
170
−
120
130
245
−
mW
DS(ON)
D
= 6 V, I = 3.5 A
D
= 10 V, I = 3.7 A, T = 125°C
−
D
J
I
On−State Drain Current
= 10 V, V = 10 V
10
−
A
S
D(ON)
DS
g
FS
Forward Transconductance
= 10 V, I = 3.7 A
11
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 50 V, V = 0 V, f = 1.0 MHz
−
−
−
632
40
−
−
−
pF
pF
pF
iss
GS
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
20
SWITCHING CHARACTERISTICS (Note 2)
t
Turn − On Delay Time
Turn − On Rise Time
Turn − Off Delay Time
Turn − Off Fall Time
Total Gate Charge
V
V
= 50 V, I = 1 A,
−
−
−
−
−
−
−
8.5
2
17
4
ns
ns
d(on)
DD
D
= 10 V, R
= 6 W
GS
GEN
t
r
t
23
4.5
14
2.4
3.8
37
9
ns
d(off)
t
f
ns
Q
g
V
DS
= 50 V, I = 3.7 A, V = 10 V
20
−
nC
nC
nC
D
GS
Q
Gate−Source Charge
Gate−Drain Charge
gs
gd
Q
−
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain−Source Diode Forward Current
Drain−Source Diode Forward Voltage = 0 V, I = 2.5 A (Note 2)
I
−
−
−
2.5
1.2
A
V
S
V
SD
V
GS
0.75
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2
FDT3612
NOTES:
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
q
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
q
q
JC
CA
a. 42°C/W when
b. 95°C/W when
c. 110°C/W when
mounted on a minimum
pad.
2
mounted on a 1 in
mounted on a 0.0066
2
pad of 2 oz copper.
in pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
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3
FDT3612
TYPICAL CHARACTERISTICS
1.8
20
V
GS
= 10 V
5.0 V
4.5 V
1.6
1.4
1.2
16
12
V
GS
= 4.0 V
4.0 V
3.5 V
4.5 V
5.0 V
8
4
0
6.0 V
10.0 V
12
1
0.8
0
2
4
6
8
150
5
0
4
8
16
20
V
, DRAIN−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
DS
Figure 2. On−Resistance Variation with
Figure 1. On−Region Characteristics
Drain Current and Gate Voltage
0.4
0.3
0.2
2.2
2
I
= 1.9 A
I
V
= 3.7 A
= 10 V
D
D
GS
1.8
1.6
1.4
T = 125°C
A
1.2
1
T = 25°C
A
0.1
0
0.8
0.6
0.4
5
6
7
8
3
4
9
10
−50 −25
0
25
50
75
100 125
T , JUNCTION TEMPERATURE (°C)
J
V
, GATE TO SOURCE VOLTAGE (V)
GS
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
Temperature
100
10
1
V
= 10 V
V
GS
= 0 V
20
16
DS
T = 125°C
A
12
8
25°C
0.1
0.01
−55°C
T = 125°C
A
25°C
4
0.001
0.0001
−55°C
0
2
2.5
3
3.5
4
4.5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
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4
FDT3612
TYPICAL CHARACTERISTICS (continued)
10
8
800
700
f = 1 MHz
= 0 V
I
D
= 3.7 A
V
GS
C
iss
V
= 40 V
600
500
400
300
200
100
0
DS
60 V
6
80 V
4
Crss
2
Coss
0
40
, DRAIN TO SOURCE VOLTAGE (V)
0
2
4
6
8
10
12
14
16
0
20
60
80
100
Q , GATE CHARGE (nC)
V
DS
g
Figure 8. Capacitance Characteristics
Figure 7. Gate Charge Characteristics
40
50
10
SINGLE PULSE
= 110°C/W
T = 25°C
A
R
q
JA
100 ms
30
20
1
1 ms
THIS AREA IS
10 ms
100 ms
1 s
0.1
LIMITED BY r
DS(on)
10 s
DC
SINGLE PULSE
10
0
0.01
T = MAX RATED
J
R
q
JA
= 110°C/W
T = 25°C
A
0.001
100
0.001
0.01
0.1
1
10
0.1
1
10
100
500
t , TIME (s)
1
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power
Dissipation
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
R
R
(t) = r(t) x R
= 110°C/W
q
q
q
JA
JA
JA
P(pk)
t1
0.01
t2
Single Pulse
0.001
T − T = P x R (t)
q
JA
J
A
Duty Cycle, D = t / t
1
2
0.001
0.0001
1000
0.01
0.1
10
100
1
t , TIME (s)
1
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
POWERTRENCH is a registered trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−223
CASE 318H
ISSUE B
DATE 13 MAY 2020
SCALE 2:1
A
Y
W
= Assembly Location
= Year
= Work Week
GENERIC
MARKING DIAGRAM*
XXXXX = Specific Device Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
AYW
XXXXXG
G
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASH70634A
SOT−223
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
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© Semiconductor Components Industries, LLC, 2018
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, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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