FDT86256 [ONSEMI]
N 沟道，PowerTrench® MOSFET，150V，1.2A，845mΩ;
| 型号： | FDT86256 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，150V，1.2A，845mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：346K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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August 2011
FDT86256
N-Channel PowerTrench® MOSFET
150 V, 1.2 A, 845 mΩ
Features
General Description
Max rDS(on) = 845 mΩ at VGS = 10 V, ID = 1.2 A
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance and
switching loss. G-S zener has been added to enhance ESD
voltage level.
Max rDS(on) = 1280 mΩ at VGS = 6.0 V, ID = 1.0 A
Very low Qg and Qgd compared to competing trench
technologies
Fast switching speed
100% UIL Tested
RoHS Compliant
Applications
DC-DC conversion
Inverter
Synchronous Rectifier
D
D
S
D
G
SOT-223
G
S
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
150
V
V
±20
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
TC = 25 °C
3
TC = 25 °C
2.5
ID
A
TA = 25 °C
(Note 1a)
(Note 3)
1.2
-Pulsed
2
EAS
Single Pulse Avalanche Energy
Power Dissipation
1
10
mJ
W
TC = 25 °C
TA = 25 °C
PD
Power Dissipation
(Note 1a)
2.3
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
12
55
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13 ’’
Tape Width
Quantity
86256
FDT86256
SOT-223
12 mm
2500 units
©2011 Fairchild Semiconductor Corporation
FDT86256 Rev. C
1
www.fairchildsemi.com
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
150
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = 250 μA, referenced to 25 °C
100
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 120 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
1
μA
μA
±10
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
2
3.5
-8
4
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
D = 250 μA, referenced to 25 °C
mV/°C
V
GS = 10 V, ID = 1.2 A
695
912
1298
0.3
845
1280
1367
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
VGS = 6 V, ID = 1.0 A
mΩ
VGS = 10 V, ID = 1.2 A, TJ = 125 °C
VDS = 5 V, ID = 1.2 A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
55
8
73
11
pF
pF
pF
Ω
VDS = 75 V, VGS = 0 V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
1
1.4
1.3
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
2.7
1.7
4.8
2.6
1.2
0.8
0.4
0.3
10
10
ns
ns
ns
ns
nC
VDD = 75 V, ID = 1.2 A,
V
GS = 10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
10
10
Qg(TOT)
Qg(TOT)
Qgs
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0 V to 10 V
VGS = 0 V to 6 V
2.0
1.0
VDD = 75 V,
D = 1.2 A
I
nC
nC
Qgd
Drain-Source Diode Characteristics
V
GS = 0 V, IS = 1.2 A
(Note 2)
(Note 2)
0.9
0.8
47
1.3
1.3
75
VSD
Source to Drain Diode Forward Voltage
V
VGS = 0 V, IS = 1.0 A
trr
Reverse Recovery Time
ns
IF = 1.2 A, di/dt = 100 A/μs
Qrr
Reverse Recovery Charge
24
38
nC
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R is determined by
θCA
θJA
θJC
the user's board design.
a)
b) 118 °C/W when mounted on
a minimum pad of 2 oz copper
55 °C/W when mounted on a
1 in pad of 2 oz copper
2
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. Starting T = 25 °C, L = 3 mH, I = 1 A, V = 150 V, V = 10 V.
J
AS
DD
GS
4. The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
©2011 Fairchild Semiconductor Corporation
FDT86256 Rev. C
2
www.fairchildsemi.com
Typical Characteristics TJ = 25 °C unless otherwise noted
3.0
4
3
2
1
0
VGS = 10 V
VGS = 5.5 V
VGS = 8 V
VGS = 6 V
2.5
VGS = 7 V
VGS = 7 V
2.0
VGS = 6 V
VGS = 8 V
1.5
VGS = 5.5 V
1.0
VGS = 10 V
0.5
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
1
2
3
4
5
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
4000
2.4
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID = 1.2 A
ID = 1.2 A
2.1
1.8
1.5
1.2
0.9
0.6
0.3
VGS = 10 V
3000
2000
1000
0
TJ = 125 o
C
TJ = 25 oC
5
6
7
8
9
10
-75 -50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
F ig u re 3. No rmal i zed O n-Re si stan ce
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
2.0
10
PULSE DURATION = 80 μs
VGS = 0 V
DUTY CYCLE = 0.5% MAX
1.5
1.0
0.5
0.0
VDS = 5 V
1
0.1
TJ = 150 o
C
TJ = 25 oC
TJ = 25 oC
TJ = -55 oC
TJ = 150 oC
TJ = -55 oC
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
2
3
4
5
6
7
8
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
©2011 Fairchild Semiconductor Corporation
FDT86256 Rev. C
3
www.fairchildsemi.com
Typical Characteristics TJ = 25 °C unless otherwise noted
100
10
10
ID = 1.2 A
Ciss
8
Coss
VDD = 75 V
VDD = 85 V
VDD = 65 V
6
4
2
0
Crss
f = 1 MHz
= 0 V
1
V
GS
0.5
0.1
1
10
100
0.0
0.3
0.6
0.9
1.2
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
RθJA = 55 oC/W
1
TJ = 25 o
C
VGS = 10 V
TJ = 100 o
C
VGS = 6 V
0.1
TJ = 125 oC
0.01
0.001
0.01
0.1
1
10
100
1000
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs Ambient Temperature
3
100
10
THIS AREA IS
LIMITED BY rDS(on)
1
100 μs
1 ms
0.1
10 ms
SINGLEPULSE
100 ms
R
θJA= 118oC/W
SINGLE PULSE
TJ = MAX RATED
1 s
10 s
DC
T = 25 oC
1
A
R
θJA = 118 oC/W
0.5
10
0.01
TA = 25 oC
-3
-2
10
-1
10
100
1000
1
10
t, PULSEWIDTH(sec)
0.005
0.01
0.1
1
10
100
500
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure 12. Single Pulse Maximum Power Dissipation
©2011 Fairchild Semiconductor Corporation
FDT86256 Rev. C
4
www.fairchildsemi.com
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
P
DM
0.1
0.02
0.01
t
1
SINGLE PULSE
RθJA = 118 oC/W
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
J
x Z
x R
+ T
DM
θJA
θJA A
0.01
10-4
10-3
10-2
10-1
1
10
100
1000
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2011 Fairchild Semiconductor Corporation
FDT86256 Rev. C
5
www.fairchildsemi.com
6.70
6.20
B
0.10
C B
3.10
2.90
3.25
4
1.90
A
3.70
3.30
6.10
1.90
1
3
0.84
0.60
2.30
2.30
0.95
4.60
0.10
C B
LAND PATTERN RECOMMENDATION
SEE DETAIL A
1.80 MAX
7.30
6.70
0.08
C
C
0.10
0.00
NOTES: UNLESS OTHERWISE SPECIFIED
A) DRAWING BASED ON JEDEC REGISTRATION
TO-261C, VARIATION AA.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR BURRS
DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M-2009.
R0.15±0.05
R0.15±0.05
10°
5°
GAGE
PLANE
0.35
0.20
E) LANDPATTERN NAME: SOT230P700X180-4BN
F) DRAWING FILENAME: MKT-MA04AREV3
10°
0°
TYP
0.25
10°
5°
0.60 MIN
SEATING
PLANE
1.70
DETAIL A
SCALE: 2:1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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