FDU5N60NZTU [ONSEMI]
Power MOSFET, N-Channel, UniFETTM II, 600 V, 4 A, 2 Ω, IPAK;
| 型号： | FDU5N60NZTU |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, N-Channel, UniFETTM II, 600 V, 4 A, 2 Ω, IPAK |
| 文件： | 总9页 (文件大小：480K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FDU5N60NZTU
N-Channel UniFET II
MOSFET
600 V, 4 A, 2 W
UniFET II MOSFET is ON Semiconductor’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest on−state
resistance among the planar MOSFET, and also provides superior
switching performance and higher avalanche energy strength. In
addition, internal gate−source ESD diode allows UniFET II MOSFET
to withstand over 2 kV HBM surge stress. This device family is
suitable for switching power converter applications such as power
factor correction (PFC), flat panel display (FPD) TV power, ATX and
electronic lamp ballasts.
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D
G
S
Features
• R
= 1.65 ꢀ (Typ.) @ V = 10 V, I = 2 A
GS D
• Low Gate Charge (Typ. 10 nC)
DS(on)
• Low C (Typ. 5 pF)
rss
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• These Devices are Pb−Free and are RoHS Compliant
IPAK3
CASE 369AR
Applications
• LCD / LED TV
• Lighting
• Charger / Adapter
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
May, 2019 − Rev. 0
FDU5N60NZTU/D
FDU5N60NZTU
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Value
Unit
V
V
DSS
V
GSS
Drain−to−Source Voltage
Gate−to−Source Voltage
Drain Current
600
25
V
I
D
Continuous (T = 25°C)
4
A
C
Continuous (T = 100°C)
2.4
C
I
I
Drain Current
Pulsed (Note 1)
16
A
mJ
A
DM
E
AS
Single Pulse Avalanche Energy (Note 2)
Avalanche Current (Note 1)
216
4
AR
E
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery (Note 3)
Power Dissipation
8.3
mJ
V/ns
W
AR
dv/dt
10
83
P
T = 25°C
C
D
Derate Above 25°C
0.7
W/°C
°C
T , T
Operating and Storage Temperature Range
−55 to +150
300
J
STG
T
L
Maximum Lead Temperature for Soldering Purposes (1/8″ from case for 5 seconds)
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. I = 4 A, V = 50 V, L = 27 mH, R = 25 ꢀ, starting T = 25°C.
AS
DD
G
DSS
J
3. I ≤ 4 A, di/dt ≤ 200 A/ꢁ s, V ≤ BV
, Starting T = 25°C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
1.5
Unit
Thermal Resistance, Junction−to−Case, Max.
Thermal Resistance, Junction−to−Ambient, Max.
°C/W
R
ꢂ
JC
JA
R
90
ꢂ
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FDU5N60NZTU
FDU5N60NZ
IPAK
Tube
N/A
N/A
75 units
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2
FDU5N60NZTU
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
C
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain−to−Source Breakdown Voltage
I
= 250 ꢁ A, V = 0 V, T = 25°C
600
−
−
−
V
DSS
D
GS
J
ꢃ
B
V
/ꢃ T
Breakdown Voltage Temperature
Coefficient
I
= 250 ꢁ A, Referenced to 25°C
−
0.6
V/°C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
= 600 V, V = 0 V
−
−
−
−
−
−
50
100
10
ꢁ A
ꢁ A
DSS
DS
GS
V
DS
= 480 V, T = 125°C
C
I
Gate−to−Body Leakage Current
V
GS
= 25 V, V = 0 V
DS
GSS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
= V , I = 250 ꢁ A
3.0
−
−
1.65
5
5.0
2.00
−
V
ꢀ
S
GS(th)
DS(on)
GS
DS
D
R
Static Drain−to−Source On Resistance
Forward Transconductance
V
V
= 10 V, I = 2 A
D
GS
DS
g
FS
= 20 V, I = 2 A
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 25 V, V = 0 V, f = 1 MHz
−
−
−
−
−
−
450
50
5
600
65
7.5
13
−
pF
nC
iss
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
Total Gate Charge at 10 V
Gate−to−Source Gate Charge
Gate−to−Drain “Miller” Charge
rss
Q
V
DS
= 400 V, I = 4 A,
10
2.5
4
g(tot)
D
V
GS
= 10 V (Note 4)
Q
gs
Q
−
gd
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Turn−On Rise Time
Turn−Off Delay Time
Turn−Off Fall Time
V
= 250 V, I = 4 A,
−
−
−
−
15
20
35
20
40
50
80
50
ns
d(on)
DD
D
V
GS
= 10 V, R = 25 ꢀ (Note 4)
G
t
r
t
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
I
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
−
−
−
−
−
−
−
4
16
1.4
−
A
S
I
SM
V
SD
Drain to Source Diode Forward Voltage
Reverse Recovery Time
V
= 0 V, I = 4 A
−
V
GS
SD
t
rr
V
GS
= 0 V, I = 4 A,
dI /dt = 100 A/ꢁ s
230
0.9
ns
ꢁ C
SD
F
Q
Reverse Recovery Charge
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of Operating Temperature Typical Characteristics.
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3
FDU5N60NZTU
TYPICAL CHARACTERISTICS
10
VGS = 12.0V
*Notes:
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
1. VDS = 20V
2. 250 ꢁs Pulse Test
150oC
1
25oC
−55oC
*Notes:
1. 250ꢁs Pulse Test
2. TC = 25oC
0.1
0.1
1
10 20
VGS, Gate−Source Voltage[V]
VDS, Drain−Source Voltage[V]
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
3.5
30
10
3.0
2.5
2.0
1.5
150oC
VGS = 10V
25oC
1
VGS = 20V
*Notes:
1. VGS = 0V
*Note: TC = 25oC
6
2. 250 ꢁs Pulse Test
0.1
0
2
4
8
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Body Diode Forward Voltage [V]
ID, Drain Current [A]
Figure 3. On−Resistance Variation vs. Drain
Figure 4. Body Diode Forward Voltage
Current and Gate Voltage
Variation vs. Source Current and Temperature
10
1000
Ciss
VDS = 120V
V
V
DS = 300V
DS = 480V
8
6
4
2
0
Coss
100
*Note:
1. VGS = 0V
Crss
2. f = 1MHz
10
3
C
= C + C (C = shorted)
gs gd ds
iss
C
oss
= C + C
ds gd
*Note: ID = 4A
8 10
C
rss
= C
gd
0
2
4
6
0.1
1
10
30
Qg, Total Gate Charge [nC]
VDS, Drain−Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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4
FDU5N60NZTU
TYPICAL CHARACTERISTICS
2.8
2.4
2.0
1.6
1.2
1.12
1.08
1.04
1.00
0.96
*Notes:
1. VGS = 0V
2. ID = 250 ꢁA
*Notes:
1. VGS = 10V
2. ID = 2.0A
0.92
0.88
0.8
0.4
−80
−40
0
40
80
120
160
−60 −30
0
30
60
90 120 150
TJ, Junction Temperature[oC]
TJ , Junction Temperature[oC]
Figure 7. Breakdown Voltage Variation vs.
Temperature
Figure 8. On−Resistance Variation vs.
Temperature
30
4
3
2
1
0
30ꢁs
10
100ꢁs
1ms
10ms
DC
1
Operation in This Area
is Limited by R
DS(on)
0.1
*Notes:
1. TC = 25oC
R
θJC = 1.5oC/W
2. TJ = 150 o
C
3. Single Pulse
0.01
1
10
100
1000
25
50
75
100
125
150
TC, Case Temperature[oC]
VDS, Drain−Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case
Temperature
2
1
0.5
0.2
0.1
PDM
t1
0.05
0.1
t2
0.02
0.01
*Notes:
1. ZꢂJC(t) = 1.5oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM − TC= PDM * ZθJC(t)
Single pulse
0.01
10−5
10−4
10−3
10−2
10−1
1
t1, Rectangular Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
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5
FDU5N60NZTU
IG = const.
Figure 12. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
VGS
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
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6
FDU5N60NZTU
+
DUT
VDS
_
ISD
L
Driver
RG
Same Type
as DUT
VDD
VGS
Sdv/dt controlled by RG
SISD controlled by pulse period
Gate Pulse Width
Gate Pulse Period
VGS
( Driver )
D =
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK3 (IPAK)
CASE 369AR
ISSUE O
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13815G
DPAK3 (IPAK)
PAGE 1 OF 1
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