FDV045P20L [ONSEMI]
-20 V P-Channel PowerTrench® MOSFET;
| 型号： | FDV045P20L |
| 厂家： | 
ONSEMI |
| 描述： | -20 V P-Channel PowerTrench® MOSFET |
| 文件： | 总8页 (文件大小：356K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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September 2016
FDV045P20L
P-Channel PowerTrench® MOSFET
-20 V, -1.15 A, 108 mΩ
Features
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench® process that has
been optimized for the on-state resistance and yet maintain
superior switching performance.
Max rDS(on) = 108 mΩ at VGS = -4.5 V, ID = -1.15 A
Max rDS(on) = 121 mΩ at VGS = -2.5 V, ID = -0.7 A
Very low rDS(on) Mid Voltage P-channel Silicon Technology
Optimised for Low Qg
Applications
This product is optimised for fast switching applications as
well as load switch applications
Active Clamp Switch
Load Switch
100% UIL Tested
RoHS Compliant
SOT-23
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
Symbol
VDS
VGS
Parameter
Ratings
-20
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
±8
-Continuous
(Note 1a)
(Note 4)
(Note 3)
(Note 1a)
(Note 1b)
-1.15
-33
ID
A
mJ
W
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
EAS
PD
13
1.6
Power Dissipation
0.7
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
80
°C/W
180
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
7 ’’
Tape Width
8 mm
Quantity
FDV045P20L
FDV045P20L
SOT-23
3000 units
©2016 Fairchild Semiconductor Corporation
FDV045P20L Rev.1.0
www.fairchildsemi.com
1
Electrical Characteristics TJ = 25 °C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250 μA, VGS = 0 V
-20
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = -250 μA, referenced to 25 °C
-18
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = -16 V, VGS = 0 V
VGS = ±8 V, VDS = 0 V
-1
μA
±100
nA
On Characteristics (Note 2)
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250 μA
-0.5
-0.9
3
-1.5
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
D = -250 μA, referenced to 25 °C
VGS = -4.5 V, ID = -1.15 A
GS = -2.5 V, ID = -0.7 A
mV/°C
86
97
108
121
160
V
rDS(on)
Static Drain to Source On Resistance
Forward Transconductance
mΩ
VGS = -1.8 V, ID = -0.5 A
121
VGS = -4.5 V, ID = -1.15A,
TJ = 125 °C
110
3
138
gFS
VDS = -5 V, ID = -1.15 A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
812
119
108
20
1220
167
pF
pF
pF
Ω
VDS = -10 V, VGS = 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
151
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
8.4
6.5
76
17
13
ns
ns
VDD = -10 V, ID = -1.15 A,
V
GS = -4.5 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
122
42
ns
26
ns
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VGS = 0 V to -4.5 V
VGS = 0 V to -2.5 V
7.2
4.4
1.2
1.8
10
nC
nC
nC
nC
Qg
6.2
VDD =-10V,
D = -1.15A
I
Qgs
Qgd
Drain-Source Diode Characteristics
VSD
trr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, IS = -1.15 A
(Note 2)
-0.8
11
2
-1.2
20
V
ns
nC
IF = -1.15 A, di/dt = 100 A/μs
Qrr
Reverse Recovery Charge
10
Notes:
1. R
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
θJA
θJC
is guaranteed by design while R
is determined by the user's board design.
θCA
b) 180 °C/W when mounted on a
minimum pad.
a)
80 °C/W when mounted on a
1 in pad of 2 oz copper
2
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting T = 25 °C; P-ch: L = 3 mH, I = -3 A, V = -20 V, V = -6.4 V.
J
AS
DD
GS
4. Pulsed Id refer to Fig 10 SOA curve for more details.
©2016 Fairchild Semiconductor Corporation
FDV045P20L Rev.1.0
www.fairchildsemi.com
2
Typical Characteristics TJ = 25 °C unless otherwise noted.
8
4
3
2
1
0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = -4.5 V
VGS = -3 V
6
VGS = -2.5 V
VGS = -1.8 V
VGS = -2 V
VGS = -2 V
4
VGS = -1.8 V
VGS = -2.5 V
VGS = -4.5 V
2
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = -3 V
0
0
1
2
3
4
0
2
4
6
8
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs. Drain Current and Gate Voltage
300
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
I
V
= -1.15 A
= -4.5 V
D
GS
250
200
150
100
50
I
= -1.15 A
D
o
T = 125
J
C
o
T = 25
J
C
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-75 -50 -25
0
25 50 75 100 125 150
T , JUNCTION TEMPERATURE (oC)
J
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure4. On-Resistance vs. Gate to
Source Voltage
Figure 3. Normalized On Resistance
vs. Junction Temperature
8
8
VGS = 0 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
1
6
TJ = 150 o
C
VDS = -5 V
TJ = 150 o
C
TJ = 25 o
C
0.1
0.01
4
2
0
TJ = 25 o
C
TJ = -55 o
C
TJ = -55 o
C
0.001
0
1
2
3
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs. Source Current
©2016 Fairchild Semiconductor Corporation
FDV045P20L Rev.1.0
www.fairchildsemi.com
3
Typical Characteristics TJ = 25 °C unless otherwise noted.
10
2000
1000
I
D
= -1.15 A
V
= -10 V
DD
8
6
4
2
0
Ciss
V
DD
= -8 V
V
= -12 V
DD
Coss
f = 1 MHz
GS = 0 V
100
50
V
Crss
0
2
4
Q , GATE CHARGE (nC)
6
8
0.1
1
10
20
g
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s . D r a i n
to Source Voltage
50
10
7
6
THIS AREA IS
LIMITED BY r
DS(on)
5
4
100 μs
TJ = 25 o
C
3
2
1
0.1
1 ms
TJ = 100 o
C
10 ms
100 ms
SINGLE PULSE
TJ = MAX RATED
RθJA = 180oC/W
TA = 25 oC
1 s
10 s
DC
TJ = 125 o
C
CURVE BENT TO
MEASURED DATA
0.01
1
0.01
0.1
1
10
100
0.001
0.1
1
10
-VDS, DRAIN to SOURCE VOLTAGE (V)
tAV, TIME IN AVALANCHE (ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure 10. Forward Bias Safe
Operating Area
1000
SINGLE PULSE
RθJA = 180 oC/W
A = 25 oC
100
10
1
T
0.1
10-4
10-3
10-2
10-1
t, PULSE WIDTH (sec)
1
10
100
1000
Figure 11. Single Pulse Maximum Power Dissipation
©2016 Fairchild Semiconductor Corporation
FDV045P20L Rev.1.0
www.fairchildsemi.com
4
Typical Characteristics TJ = 25 °C unless otherwise noted.
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
PDM
0.1
0.01
0.05
0.02
0.01
t1
t2
NOTES:
ZθJA(t) = r(t) x RθJA
SINGLE PULSE
RθJA = 180 oC/W
Peak TJ = PDM x ZθJA(t) + TA
Duty Cycle, D = t1 / t2
0.001
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
©2016 Fairchild Semiconductor Corporation
FDV045P20L Rev.1.0
www.fairchildsemi.com
5
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
®
AccuPower™
F-PFS™
FRFET
OPTOPLANAR
®*
®
AttitudeEngine™
®
®
Global Power ResourceSM
GreenBridge™
Green FPS™
tm
Awinda
®
TinyBoost
TinyBuck
®
AX-CAP *
Power Supply WebDesigner™
®
®
BitSiC™
PowerTrench
TinyCalc™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
PowerXS™
®
TinyLogic
Programmable Active Droop™
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
®
QFET
QS™
Quiet Series™
Current Transfer Logic™
Marking Small Speakers Sound Louder RapidConfigure™
TranSiC™
®
DEUXPEED
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
™
TriFault Detect™
TRUECURRENT *
Dual Cool™
®
®
EcoSPARK
Saving our world, 1mW/W/kW at a time™
SignalWise™
μSerDes™
EfficentMax™
ESBC™
MicroPak™
SmartMax™
MicroPak2™
MillerDrive™
MotionMax™
SMART START™
®
®
Solutions for Your Success™
UHC
®
®
SPM
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
Fairchild
®
®
MotionGrid
STEALTH™
Fairchild Semiconductor
FACT Quiet Series™
®
®
MTi
SuperFET
®
®
MTx
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
FACT
®
MVN
FastvCore™
FETBench™
FPS™
®
mWSaver
®
OptoHiT™
OPTOLOGIC
SupreMOS
Xsens™
®
®
SyncFET™
仙童
Sync-Lock™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
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Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I77
www.fairchildsemi.com
©2016 Fairchild Semiconductor Corporation
FDV045P20L Rev.1.0
6
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arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
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