FDZ1416NZ [ONSEMI]
共漏极，N 沟道 2.5 V PowerTrench® WL-CSP MOSFET 24V，7A，23mΩ;
| 型号： | FDZ1416NZ |
| 厂家： | 
ONSEMI |
| 描述： | 共漏极，N 沟道 2.5 V PowerTrench® WL-CSP MOSFET 24V，7A，23mΩ |
| 文件： | 总8页 (文件大小：306K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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June 2015
FDZ1416NZ
Common Drain N-Channel 2.5 V PowerTrench® WL-CSP MOSFET
24 V, 7 A, 23 m
Features
General Description
This device is designed specifically as a single package solution
for Li-Ion battery pack protection circuit and other ultra-portable
applications. It features two common drain N-channel
MOSFETs, which enables bidirectional current flow, on
Max rS1S2(on) = 23 m at VGS = 4.5 V, IS1S2 = 1 A
Max rS1S2(on) = 25 m at VGS = 4 V, IS1S2 = 1 A
Max rS1S2(on) = 28 m at VGS = 3.1 V, IS1S2 = 1 A
Max rS1S2(on) = 33 m at VGS = 2.5 V, IS1S2 = 1 A
Occupies only 2.2 mm2 of PCB area
®
Fairchild’s advanced PowerTrench process with state of the art
“low pitch” WLCSP packaging process, the FDZ1416NZ
minimizes both PCB space and rS1S2(on). This advanced
WLCSP MOSFET embodies a breakthrough in packaging
technology which enables the device to combine excellent
thermal transfer characteristics, ultra-low profile packaging, low
Ultra-thin package: less than 0.35 mm height when mounted
to PCB
gate charge and low rS1S2(on)
.
High power and current handling capability
HBM ESD protection level > 3.2 kV (Note 3)
RoHS Compliant
Applications
Battery management
Load switch
Battery protection
S1
PIN1
PIN1
G1
G2
S1
G1
G2
S2
TOP
BOTTOM
S2
WL-CSP 1.4X1.6
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VS1S2
Parameter
Ratings
Units
Source1 to Source2 Voltage
Gate to Source Voltage
24
V
V
VGS
±12
Source1 to Source2 Current -Continuous TA = 25°C
-Pulsed
(Note 1a)
7
30
IS1S2
A
Power Dissipation
Power Dissipation
TA = 25°C
TA = 25°C
(Note 1a)
(Note 1b)
1.7
PD
W
0.5
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RJA
RJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
74
°C/W
230
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
7 ’’
Tape Width
Quantity
EN
FDZ1416NZ
WL-CSP 1.4X1.6
8 mm
5000 units
1
©2012 Fairchild Semiconductor Corporation
FDZ1416NZ Rev.1.6
www.fairchildsemi.com
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
Zero Gate Voltage Source1 to Source2
Current
IS1S2
IGSS
V
S1S2 = 19 V, VGS = 0 V
1
A
A
Gate to Source Leakage Current
VGS = ±12 V, VS1S2 = 0 V
±10
On Characteristics
VGS(th)
rS1S2(on)
gFS
Gate to Source Threshold Voltage
VGS = VS1S2, IS1S2 = 250 A
0.4
9
0.9
16
17
19
22
24
4.5
1.3
23
25
28
33
36
V
m
S
VGS = 4.5 V, IS1S2 = 1 A
V
GS = 4 V, IS1S2 = 1 A
10
11
12
Static Source1 to Source2 On Resistance VGS = 3.1 V, IS1S2 = 1 A
VGS = 2.5 V, IS1S2 = 1 A
VGS = 4.5 V, IS1S2 = 1 A,TJ = 125 oC
Forward Transconductance
VS1S2 = 5 V, IS1S2 = 1 A
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
1140
136
129
1515
220
pF
pF
pF
VS1S2 = 12 V, VGS = 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
205
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
9.5
12
19
22
59
33
17
ns
ns
VS1S2 = 12 V, IS1S2 = 1 A,
V
GS = 4.5 V, RGEN = 6
Turn-Off Delay Time
Fall Time
37
ns
16
ns
Qg
Total Gate Charge
Gate to Source1 Gate Charge
Gate to Source2 “Miller” Charge
12
nC
nC
nC
VS1S2 = 12 V, IS1S2 = 1 A,
G1S1 = 4.5 V, VG2S2 = 0 V
Qgs
Qgd
1.6
3.7
V
Source1 to Source2 Diode Characteristics
Ifss
Maximum Continuous Source1 to Source2 Diode Forward Current
1
A
V
Source1 to Source2 Diode Forward
Voltage
VG1S1 = 0 V, VG2S2 = 4.5 V,
fss = 1 A (Note 2)
Vfss
0.7
1.2
I
Notes:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R is determined by
CA
JA
JC
the user's board design.
a. 74 °C/W when mounted on a
1 in pad of 2 oz copper
b. 230 °C/W when mounted on a
minimum pad of 2 oz copper
2
2. Pulse Test: Pulse Width < 300 us, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only protection against ESD. No gate overvoltage rating is implied.
2
www.fairchildsemi.com
©2012 Fairchild Semiconductor Corporation
FDZ1416NZ Rev.1.6
Typical Characteristics TJ = 25°C unless otherwise noted
30
20
10
0
30
VGS = 4.5 V
VGS = 4 V
VGS = 3.1 V
VG1S1 = 4.5 V
VG1S1 = 2.5 V
VG1S1 = 4 V
VGS = 2.5 V
VG1S1 = 3.1 V
20
VG1S1 = 2 V
VGS = 2 V
10
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
VG2S2 = 4.5 V
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
0
0.0
0.0
0.2
0.4
0.6
0.8
1.0
0.2
0.4
0.6
0.8
1.0
VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V)
VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V)
F ig u re 1. On-Reg ion Ch ara cteristics
F igu re 2. On -Reg io n Ch ara cteristics
2.0
2.0
PULSE DURATION = 80s
DUTY CYCLE = 0.5% MAX
VG2S2 = 4.5 V
VGS = 2 V
PULSE DURATION = 80s
DUTY CYCLE = 0.5% MAX
1.5
1.0
0.5
1.5
VG1S1 = 2 V
VGS = 2.5 V
VGS = 3.1 V
VGS = 4 V
VG1S1 = 3.1 V
VG1S1 = 2.5 V
1.0
0.5
VGS = 4.5 V
VG1S1 = 4.5 V
VG1S1 = 4 V
0
10
20
30
0
10
20
30
IS1S2, SOURCE1 TO SOURCE2 CURRENT (A)
IS1S2, SOURCE1 TO SOURCE2 CURRENT (A)
Figure 3. Normalized On-Resistance vs Source1
to Source2 Current and Gate Voltage
Figure 4. Normalized On-Resistance vs Source1
to Source2 Current and Gate Voltage
1.6
100
IS1S2 = 1 A
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
VGS = 4.5 V
1.4
80
IS1S2 = 1 A
1.2
1.0
0.8
0.6
60
TJ = 125 o
C
40
20
0
TJ = 25 o
C
-75 -50 -25
0
25 50 75 100 125 150
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Normalized On Resistance
vs Junction Temperature
Figure 6. On Resistance vs Gate to
Source Voltage
3
www.fairchildsemi.com
©2012 Fairchild Semiconductor Corporation
FDZ1416NZ Rev.1.6
Typical Characteristics TJ = 25°C unless otherwise noted
30
100
10
VG1S1 = 0 V, VG2S2 = 4.5 V
TJ = 150 o
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
C
VS1S2 = 5 V
20
TJ = 150 o
C
1
TJ = 25 oC
TJ = 25 o
C
0.1
10
0
TJ = -55 o
C
TJ = -55 o
C
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.5
1.0
1.5
2.0
VGS, GATE TO SOURCE VOLTAGE (V)
Vfss, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Source1 to Source2 Diode
Forward Voltage vs Source Current
2000
4.5
3.0
1.5
0.0
VG2S2 = 0 V
Ciss
IS1S2 = 1 A
VS1S2 = 9 V
1000
VS1S2 = 12 V
VS1S2 = 15 V
Coss
f = 1 MHz
= 0 V
Crss
V
GS
100
0.1
1
10
30
0
5
10
15
VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V)
Q , GATE CHARGE (nC)
g
F i g u r e 9 . G a t e C h a r g e C h a r a c t e r i s t i c s
F i g u r e 1 0 . C a p a c i t a n c e v s S o u r c e 1
to Source2 Voltage
10-1
50
10-2
10-3
10-4
10-5
10-6
10-7
10-8
10-9
10-10
VS1S2 = 0 V
10
1
1 ms
TJ = 125 oC
THIS AREA IS
LIMITED BY r
10 ms
DS(on)
0.1
100 ms
1 s
10 s
DC
SINGLE PULSE
TJ = MAX RATED
RJA = 230 oC/W
0.01
0.001
DERIVED FROM
TEST DATA
TJ = 25 o
C
T
A = 25 oC
0.01
0.1
1
10
100
0
4
8
12
16
VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 11. Gate Leakage Current
vs Gate to Source Voltage
Figure 12. Forward Bias Safe
Operating Area
4
www.fairchildsemi.com
©2012 Fairchild Semiconductor Corporation
FDZ1416NZ Rev.1.6
Typical Characteristics TJ = 25°C unless otherwise noted
100
10
1
SINGLE PULSE
R
JA = 230 oC/W
T
A = 25 oC
0.1
10-3
10-2
10-1
100
101
100
1000
Figure 13. Single Ptu, PlsUeLSME WaxIDiTmHu(smec)Power Dissipation
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
0.1
0.01
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
JA = 230 oC/W
1
2
R
PEAK T = P
x Z
x R
+ T
J
DM
JA
JA A
(Note 1b)
0.001
10-3
10-2
10-1
100
101
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
The following information applies to the WL-CSP package dimensions on the next page:
Pin Definitions:
Pin Name
Position
G1
A2
G2
B2
S1
A1
S2
B1
Product Specific Dimensions:
D
E
X
Y
1.4 mm
1.6 mm
0.475 mm
0.375 mm
5
www.fairchildsemi.com
©2012 Fairchild Semiconductor Corporation
FDZ1416NZ Rev.1.6
A
E
0.03 C
E±0.05
Ø0.250
2X
0.65
B
B
A
B
A
E
0.65
D±0.05
1
2
2
0.03 C
1
PIN A1
INDEX
AREA
2X
TOP VIEW
LAND PATTERN RECOMMENDATION
+0.015
0.150
-0.025
0.06 C
0.05 C
0.350MAX
0.160±0.025
C
SEATING PLANE
D
NOTES:
A. NO JEDEC REGISTRATION APPLIES.
B. DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS AND TOLERANCE
PER ASME Y14.5M, 1994.
D. DATUM C IS DEFINED BY THE SPHERICAL
CROWNS OF THE BALLS.
E. FOR DIMENSIONS D,E,X AND Y SEE
PRODUCT DATA SHEET.
F. FOR PIN-OUT ASSIGNMENT , REFER TO DATA SHEET.
G. DRAWING NAME: MKT-UC004AJREV2.
0.005
C A B
0.65
SOLDER BALL
0.300±0.025
(4X)
1
2
A
B
E
Y±0.020
0.65
E
X±0.020
BOTTOM VIEW
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coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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