FDZ197PZ [ONSEMI]

-20Ｖ P沟道1.5V 额定PowerTrench®薄型WL-CSP MOSFET;


型号：	FDZ197PZ
厂家：	ONSEMI
描述：	-20Ｖ P沟道1.5V 额定PowerTrench®薄型WL-CSP MOSFET 开关晶体管
文件：	总9页 (文件大小：416K)
中文：	中文翻译
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December 2014

FDZ197PZ

P-Channel 1.5 V Specified PowerTrench^®Thin WL-CSP MOSFET

-20 V, -3.8 A, 64 mΩ

Features

General Description

Max r_DS(on)= 64 mΩ at V_GS= -4.5 V, I_D= -2.0 A

Max r_DS(on)= 71 mΩ at V_GS= -2.5 V, I_D= -2.0 A

Max r_DS(on)= 79 mΩ at V_GS= -1.8 V, I_D= -1.0 A

Max r_DS(on)= 95 mΩ at V_GS= -1.5 V, I_D= -1.0 A

Designed on Fairchild's advanced 1.5 V PowerTrench^®process

with state of the art "fine pitch" WLCSP packaging process, the

FDZ197PZ minimizes both PCB space and r_DS(on). This

advanced WLCSP MOSFET embodies a breakthrough in

packaging technology which enables the device to combine

excellent thermal transfer characteristics, ultra-low profile

Occupies only 1.5 mm²of PCB area.Less than 50% of the

packaging, low gate charge, and low r_DS(on)

area of 2 x 2 BGA

Applications

Ultra-thin package: less than 0.65 mm height when mounted

to PCB

Battery management

Load switch

HBM ESD protection level > 4400V (Note3)

RoHS Compliant

Battery protection

PIN1

TOP

BOTTOM

WL-CSP 1x1.5 Thin

MOSFET Maximum Ratings ^T_A= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

-20

Units

Drain to Source Voltage

Gate to Source Voltage

±8

-Continuous

-Pulsed

Power Dissipation

T_A= 25°C

(Note 1a)

-3.8

I_D

-15

T_A= 25°C

(Note 1a)

(Note 1b)

1.9

P_D

0.9

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJA

Thermal Resistance, Junction to Ambient

(Note 1a)

(Note 1b)

°C/W

133

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

7 ”

Tape Width

8 mm

Quantity

FDZ197PZ

WL-CSP 1x1.5 Thin

5000 units

FDZ197PZ Rev.C3

www.fairchildsemi.com

Electrical Characteristics ^T_J^{= 25 °C unless otherwise noted}

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BV_DSS

Drain to Source Breakdown Voltage

I_D= -250 µA, V_GS= 0 V

-20

∆BV_DSS

∆T_J

Breakdown Voltage Temperature

Coefficient

_D= -250 µA, referenced to 25 °C

-10

mV/°C

I_DSS

I_GSS

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

V_DS= -16 V, V_GS= 0 V

V_GS= ±8 V, V_DS= 0 V

-1

µA

±10

On Characteristics

V_GS(th)

Gate to Source Threshold Voltage

V_GS= V_DS, I_D= -250 µA

-0.4

-0.5

2.7

-1.0

∆V_GS(th)

∆T_J

Gate to Source Threshold Voltage

Temperature Coefficient

I_D= -250 µA, referenced to 25 °C

mV/°C

V_GS= -4.5 V, I_D= -2.0 A

V_GS= -2.5 V, I_D= -2.0 A

V_GS= -1.8 V, I_D= -1.0 A

V_GS= -1.5 V, I_D= -1.0 A

r_DS(on)

Static Drain to Source On Resistance

Forward Transconductance

mΩ

V_GS= -4.5 V, I_D= -2.0 A,

T_J=125 °C

g_FS

V_DD= -5 V, I_D= -3.8 A

Dynamic Characteristics

C_iss

C_oss

C_rss

Input Capacitance

1180

190

160

1570

255

V_DS= -10 V, V_GS= 0 V,

f = 1 MHz

Output Capacitance

Reverse Transfer Capacitance

225

Switching Characteristics

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Rise Time

5.8

5.9

311

280

V_DD= -10 V, I_D= -3.8 A,

V_GS= -4.5 V, R_GEN= 6 Ω

Turn-Off Delay Time

Fall Time

498

448

Q_g

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

V_GS= 0V to -4.5V

V_DD= -10 V,

Q_gs

Q_gd

1.5

4.7

I_D= -3.8 A

Drain-Source Diode Characteristics

V_SD

t_rr

Source to Drain Diode Forward Voltage

Reverse Recovery Time

V_GS= 0 V, I_S= -1.1 A

(Note 2)

-0.6

194

344

-1.2

310

550

I_F= -3.8 A, di/dt = 100 A/µs

Q_rr

Reverse Recovery Charge

Notes:

1. R

is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

is guaranteed by design while R

is determined by

θJA

θJC

θCA

the user's board design.

a. 65 °C/W when mounted on

a 1 in pad of 2 oz copper.

b. 133 °C/W when mounted on a

minimum pad of 2 oz copper.

2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.

3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.

FDZ197PZ Rev.C3

www.fairchildsemi.com

Typical Characteristics ^T_J^{= 25 °C unless otherwise noted}

2.5

2.0

1.5

1.0

0.5

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

V_GS= -4.5 V

V_GS= -3 V

V_GS= -1.5 V

V_GS= -2.5 V

V_GS= -1.8 V

V_GS= -2.5 V

V_GS= -1.5 V

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

V_GS= -3 V

V_GS= -4.5 V

4.5

1.2

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

-I_D, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics

Figure2. N o r m a l i z e d O n - R e s i s ta n c e

vs Drain Current and Gate Voltage

1.4

150

I_D= -2 A

PULSE DURATION = 80

µs

V_GS= -4.5 V

DUTY CYCLE = 0.5% MAX

1.2

1.0

0.8

0.6

120

T_J= 125 ^o

T_J= 25 ^o

-75 -50 -25

T_J

25 50 75 100 125 150

1.0

1.5

2.0

2.5

3.0

3.5

4.0

JUNCTION TEMPERATURE ( )

^oC

-V_GS, GATE TO SOURCE VOLTAGE (V)

F i gu re 3 . N orma li zed On - Res is ta nc e

vs Junction Temperature

Figure4. On-Resistance vs Gate to

Source Voltage

V_GS= 0 V

PULSE DURATION = 80

DUTY CYCLE = 0.5% MAX

V_DS= -5 V

T_J= 150 ^o

T_J= 25 ^oC

0.1

T_J= 25 ^o

T_J= 150 ^o

0.01

0.001

T_J= -55 ^o

0.0

0.5

1.0

1.5

2.0

0.0

0.2

0.4

0.6

0.8

1.0

-V_GS, GATE TO SOURCE VOLTAGE (V)

-V_SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure6. Source to Drain Diode

Forward Voltage vs Source Current

FDZ197PZ Rev.C3

www.fairchildsemi.com

Typical Characteristics T_J= 25 °C unless otherwise noted

4.5

3000

1000

I_D= -3.8 A

V_DD= -8 V

C_iss

3.0

V_DD= -10 V

V_DD= -12 V

1.5

C_oss

f = 1 MHz

= 0 V

C_rss

0.0

100

0.1

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

Q , GATE CHARGE (nC)

Figure 7. Gate Charge Characteristics

Figure8. C a p a c i t a n c e v s D r a i n

to Source Voltage

100

µs

1 ms

T_J= 25 ^o

0.1

10 ms

THIS AREA IS

T_J= 125 ^o

LIMITED BY r

DS(on)

100 ms

1 s

SINGLE PULSE

T_J= MAX RATED

R_θ_JA= 133 ^oC/W

T_A= 25 ^oC

0.01

0.1

0.01

0.1

100

1000

0.1

t_AV, TIME IN AVALANCHE (ms)

-V_DS, DRAIN to SOURCE VOLTAGE (V)

F i g u r e 9 . U n c l a m p e d I n d u c t i v e

Switching Capability

Figure 10. Forward Bias Safe

Operating Area

10^-2

10^-3

10^-4

10^-5

10^-6

10^-7

10^-8

10^-9

200

100

V_GS= 0 V

SINGLE PULSE

R_θ_JA= 133 ^oC/W

T_A= 25 ^oC

T_J= 125 ^oC

T_J= 25 ^o

0.5

-V_GS

, GATE TO SOURCE VOLTAGE (V)

10^-4

10^-3

10^-2

t, PULSE WIDTH (sec)

10^-1

100 1000

Figure 11. Gate Leakage Current vs

Gate to Source Voltage

Figure 12. Single Pulse Maximum

Power Dissipation

FDZ197PZ Rev.C3

www.fairchildsemi.com

Typical Characteristics ^T_J^{= 25 °C unless otherwise noted}

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

0.1

SINGLE PULSE

R_θ_JA= 133 ^oC/W

NOTES:

DUTY FACTOR: D = t /t

0.01

PEAK T = P

x Z

x R

+ T

θJA

θJA A

0.005

10^-4

10^-3

10^-2

10^-1

t, RECTANGULAR PULSE DURATION (sec)

100

1000

Figure 13. Transient Thermal Response Curve

FDZ197PZ Rev.C3

www.fairchildsemi.com

Dimensional Outline and Pad Layout

Pin Definations:

Gate

Drain

Source

C1, C2

A2, B1, B2

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner

without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or

obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions,

specifically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_UCBAU-006

FDZ197PZ Rev.C3

www.fairchildsemi.com

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OPTOPLANAR^®

AccuPower

AttitudeEngine™

Awinda^®

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®*

FRFET^®

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and Better™

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TriFault Detect

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μSerDes

Saving our world, 1mW/W/kW at a time™

SignalWise

SmartMax

SMART START

Solutions for Your Success

SPM^®

ESBC

MicroPak

UHC^®

MicroPak2

MillerDrive

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VCX

VisualMax

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XS™

Fairchild^®

STEALTH

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FACT^®

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SuperSOT-3

MTi^®

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Sync-Lock™

MTx^®

FAST^®

MVN^®

FastvCore

FETBench

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仙童

™

OPTOLOGIC^®

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changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.

The datasheet is for reference information only.

Rev. I73

www.fairchildsemi.com

FDZ197PZ Rev.C3

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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FDZ197PZ [ONSEMI]

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