FDZ3N513ZT [ONSEMI]
30V 集成式 NMOS 和肖特基二极管;
| 型号： | FDZ3N513ZT |
| 厂家： | 
ONSEMI |
| 描述： | 30V 集成式 NMOS 和肖特基二极管 肖特基二极管 |
| 文件： | 总9页 (文件大小：445K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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July 2010
FDZ3N513ZT
Integrated NMOS and Schottky Diode
Features
General Description
The FDZ3N513ZT is a monolithic NMOS/ Schottky combination
(FETky) and is designed and wired to function as a discontinu-
ous conduction mode (DCM) boost LED power train for mobile
LED backlighting applications.
Monolithic NMOS and Schottky Diode
Ultra-small form factor 1mm x 1mm WLCSP
Max rDS(on) = 462 mΩ at VGS = 4.5 V, ID = 0.3 A
Max rDS(on) = 520 mΩ at VGS = 3.2 V, ID = 0.3 A
HBM ESD protection level > 2000V (Note3)
RoHS Compliant
Application
Boost Converter Power Train for single cell Li-ion LED
backlighting
D
K
S
G
Pin 1
WL-CSP 1.0X1.0 Bumps Facing Up View
WL-CSP 3D Bumps Facing Down View
WL-CSP 3D Bumps Facing Up View
Absolute Maximum Ratings
Symbol
Parameter
Ratings
30
Units
VDS
VGS
PD
NMOS Drain to Source Voltage
NMOS Gate to Source Voltage
Power Dissipation @ TA = 25°C
V
V
-0.3/5.5
1
(Note 1a)
(Note 1a)
W
A
ID
Maximum Continuous NMOS Drain Current
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
1.1
VRRM
IO
25
V
0.3
A
TJ, TSTG Operating Junction and Storage Temperature
ESD Electrostatic Discharge Protection
-55/125
2000
°C
V
CDM
Thermal Characteristics
RθJA
RθJA
Thermal Resistance, Junction to Ambient - 1in2, 2oz. Copper
(Note 1a)
(Note 1b)
100
260
°C/W
°C/W
Thermal Resistance, Junction to Ambient - Minimum Pad
Package Marking and Ordering Information
Part Number
Device Marking
Package
Reel Size
7”
Tape Width
8mm
Quantity
FDZ3N513ZT
Z3
WL-CSP 1.0X1.0
5000 units
©2010 Fairchild Semiconductor Corporation
FDZ3N513ZT Rev. C
www.fairchildsemi.com
1
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
30
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = 250 μA, referenced to 25 °C
47
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 24 V, VGS = 0 V
1
μA
μA
VGS = +5 V/-0.3 V, VDS = 0 V
±10
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
0.5
0.7
1.5
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
D = 250 μA, referenced to 25 °C
-1.6
mV/°C
V
GS = 4.5 V, ID = 0.3 A
384
410
0.5
462
520
rDS(on)
gFS
Drain to Source On Resistance
Forward Transconductance
mΩ
VGS = 3.2 V, ID = 0.3 A
VDS = 5 V, ID = 0.3 A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
45
45
10
2.0
85
85
25
pF
pF
pF
Ω
VDS = 15 V, VGS = 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
3.1
1.9
9.6
2.7
1.0
0.1
0.3
10
10
20
10
ns
ns
VDD = 15 V, ID = 0.3 A
V
GS = 5 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
ns
ns
Qg
Total Gate Charge (VGS = 4.5 V)
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
nC
nC
nC
VDD = 15 V
D = 0.3 A
Qgs
Qgd
I
Drain-Source Diode Characteristics
VSD
trr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, IS = 0.3 A
(Note 2)
0.75
16
1.2
29
10
V
ns
nC
IF = 0.3 A, di/dt = 100 A/μs
Qrr
Reverse Recovery Charge
6.0
Schottky Diode Characteristics
15
30
μA
μA
TJ = 25 °C
VR = 20 V
IR
Reverse Leakage
Forward Voltage
TJ = 85 °C
300
0.72
0.74
1.2
TJ = 25 °C
IF = 300 mA
VF
V
TJ = 85 °C
Notes:
2
1. R
is determined with the device mounted on a 1 in oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R
is determined by the
θJA
θJC
θJA
user's board design.
b. 260 °C/W when mounted on a
minimum pad of 2 oz copper.
a. 100 °C/W when mounted on
a 1 in pad of 2 oz copper.
2
2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.
©2010 Fairchild Semiconductor Corporation
FDZ3N513ZT Rev. C
www.fairchildsemi.com
2
Typical Characteristics TJ = 25°C unless otherwise noted
2
2.0
1.8
1.6
1.4
1.2
1.0
VGS = 4.5 V
VGS = 4.5 V
PULSE DURATION = 80 μs
VGS = 3.5 V
DUTY CYCLE = 0.5% MAX
1.5
VGS = 2.5 V
VGS = 1.5 V
1.0
VGS = 3.5 V
VGS = 2.5 V
0.5
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0
VGS = 1.8 V
1.5
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.0
2.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
2.0
1600
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID = 0.3 A
GS = 4.5 V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
1400
1200
1000
800
600
400
0
V
ID = 0.3 A
TJ = 125 oC
TJ = 25 oC
1.0
-75 -50 -25
0
25 50 75 100 125 150
0.5
1.5
2.0
2.5
3.0
3.5
4.0
4.5
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
2.0
2
1
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 0 V
VDS = 5 V
1.5
1.0
0.5
0
TJ = 150 oC
TJ = 150 o
C
TJ = 25 o
C
TJ = 25 o
C
TJ = -55 o
C
TJ = -55 oC
0.1
0.2
0.5
1.0
1.5
2.0
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
©2010 Fairchild Semiconductor Corporation
FDZ3N513ZT Rev. C
www.fairchildsemi.com
3
Typical Characteristics TJ = 25°C unless otherwise noted
5
500
100
ID = 0.3 A
4
VDD = 10 V
Ciss
Coss
Crss
3
VDD = 15 V
2
VDD = 20 V
1
f = 1 MHz
= 0 V
10
5
V
GS
0
0
0.3
0.6
0.9
1.2
0.1
1
10
30
Q , GATE CHARGE (nC)
g
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
10
1
0.0030
0.0025
0.0020
0.0015
0.0010
0.0005
0.0000
-0.0005
VDS = 0 V
1 ms
10 ms
THIS AREA IS
LIMITED BY r
0.1
0.01
100 ms
TJ = 125 oC
DS(on)
1 s
10 s
DC
SINGLE PULSE
TJ = MAX RATED
R
θJA = 260 oC/W
TC = 25 oC
TJ = 25 o
10
VGS, GATE TO SOURCE VOLTAGE (V)
C
0.001
0.1
1
10
100
0
2
4
6
8
12
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Forward Bias Safe
Operating Area
Figure 10. Gate Leakage Current vs
Gate to Source Voltage
10-2
10-3
10-4
10-5
10-6
1
TJ = 125 o
C
TJ = 125 oC
0.1
TJ = 85 o
C
TJ = 85 oC
0.01
TJ = 60 o
C
TJ = 60 oC
TJ = 25 oC
TJ = 25 o
C
0.001
0
0.2
0.4
0.6
0.8
0
5
10
15
20
25
30
VR, REVERSE VOLTAGE (V)
VF, FORWARD VOLTAGE (V)
Figure 11. Schottky Diode Reverse Current
Figure 12. Schottky Diode Forward Voltage
©2010 Fairchild Semiconductor Corporation
FDZ3N513ZT Rev. C
www.fairchildsemi.com
4
Typical Characteristics TJ = 25°C unless otherwise noted
1000
100
10
1
SINGLE PULSE
θJA = 260oC/W
TA = 25oC
R
0.1
10-4
10-3
10-2
10-1
1
10
100
1000
t, PULSE WIDTH (s)
Figure 13. Single Pulse Maximum Power Dissipation
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
P
0.05
0.02
0.01
DM
0.1
t
1
t
2
0.01
NOTES:
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
θJA = 260 oC/W
PEAK T = P
J
x Z
x R
+ T
DM
θJA
θJA A
R
0.001
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
1
10
100
1000
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
©2010 Fairchild Semiconductor Corporation
FDZ3N513ZT Rev. C
www.fairchildsemi.com
5
Dimensional Outline and Pad Layout
Product Specific Dimensions
Product
D
E
X
Y
FDZ3N513ZTUCX
1.000 +/-0.030
1.000 +/-0.030
0.018
0.018
©2010 Fairchild Semiconductor Corporation
FDZ3N513ZT Rev. C
www.fairchildsemi.com
6
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Datasheet contains the design specifications for product development. Specifications may change in
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The datasheet is for reference information only.
Rev. I48
©2010 Fairchild Semiconductor Corporation
FDZ3N513ZT Rev. C
www.fairchildsemi.com
7
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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