FDZ8040L [ONSEMI]
集成式负载开关;
| 型号： | FDZ8040L |
| 厂家： | 
ONSEMI |
| 描述： | 集成式负载开关 开关 |
| 文件： | 总13页 (文件大小：1722K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
April 2013
FDZ8040L
Integrated Load Switch
Description
Features
This device is particularly suited for compact power
management in portable applications needing 0.8 V to
4 V input and 1.2 A output current capability. This load
switch integrated a level-shifting function that drives a P-
channel power MOSFET in a very small 0.8 X 0.8 X
0.5 mm3 WLCSP package.
.
Optimized for Low-Voltage Core ICs in
Portable Systems
.
Very Small Package Dimension: WLCSP
0.8 X 0.8 X 0.5 mm3
.
.
.
.
.
.
.
.
Current = 1.2 A, VIN Max. = 4 V
Current = 2 A, VIN Max. = 4 V (Pulsed)
RDS(on) = 80 mΩ at VON = VIN = 4 V
RDS(on) = 85 mΩ at VON = VIN = 3.6 V
RDS(on) = 90 mΩ at VON = VIN = 3 V
RDS(on) = 360 mΩ at VON = VIN = 0.9 V
RDS(on) = 1000 mΩ at VON = VIN = 0.8 V
RoHS Compliant
Applications
.
.
Load Switch
Power Management in Portable Applications
GND
VOUT
ON
Pin 1
VIN
Figure 1.
Bottom View
Figure 2.
Top View
Ordering Information
Part
Number
Device
Mark
Ball
Operating
Packing
Method
Switch
Package
Pitch Temperature Range
0.8 x 0.8 x
80 m, P-Channel
FDZ8040L
ZM
0.4 mm
-40 to 85°C
Tape & Reel
0.5 mm3 WLCSP
MOSFET
© 2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FDZ8040L • Rev. C1
Typical Application
VIN
ON
VOUT
FDZ8040L
ON
OFF
VIN = 0.8 -4 V
CIN
COUT
GND
Figure 3.
Typical Application
Block Diagram
Figure 4.
Internal Block Diagram
Pin Configuration
Figure 5.
Top View (Bumps Down)
Figure 6.
Bottom View (Bumps Up)
Pin Descriptions
Pin #
A1
Name
VIN
Description
Supply Input: Input to the load switch
Switch Output: Output of the load switch
ON/OFF Control Input
A2
VOUT
ON
B1
B2
GND
Ground
© 2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FDZ8040L • Rev. C6
2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
VIN
Parameter
Min.
Max.
4.2
1.2
2
Unit
V
Voltage on VIN, VOUT, ON to GND
IOUT-Load Current (Continuous)(1a)
-0.3
IOUT_C
IOUT_P
A
IOUT-Load Current (Pulsed)
A
Power Dissipation at TA = 25°C(1a)
PD
TA
0.9
85
W
°C
Operating Temperature Range
Storage Temperature
Thermal Resistance, Junction to Ambient(1a)
-40
-65
TSTG
150
135
°C
R
°C/W
ΘJA
Human Body Model, JESD22-A114
8
2
ESD
Electrostatic Discharge Capability
kV
Charged Device Model, JESD22-C101
Notes:
1. RΘJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal
reference is defined as the solder mounting surface of the drain pins. RΘJC is guaranteed by design, while RΘJA
is determined by the board design.
a. 135°C/W when mounted on a
1-inch square pad of 2-oz copper.
b. 360°C/W when mounted on a
minimum pad of 2-oz copper.
2. Pulse test: pulse width < 300 µs; duty cycle < 2.0%.
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to Absolute Maximum Ratings.
Symbol
VIN
Parameter
Min.
0.8
Max.
4.0
Unit
V
Voltage on VIN Pin
Voltage on ON Pin
VON
0.7
4.0
V
1 V to 4 V
0.8 V to 4 V
-40
-10
Operating Temperature
Range
TA
85
°C
© 2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FDZ8040L • Rev. C6
3
Electrical Characteristics
TJ = 25°C and VIN=1.8 V, unless otherwise noted.
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
VIN
Operation Voltage
0.8
4.0
V
1.6 V ≤ VIN ≤ 4.0 V
0.35
0.25
VIL
VIH
ON Input Logic Low Voltage
ON Input Logic High Voltage
V
0.8 V ≤ VIN ≤ 1.6 V
1.6 V ≤ VIN ≤ 4.0 V
1.0
0.7
V
0.8 V ≤ VIN ≤ 1.6 V
IQ
Quiescent Current
Off Supply Current
Off Switch Current
ON Input Leakage
IOUT = 0 mA, VIN = VON = 1.8 V
IOUT = 0 mA, VIN = 1.8 V, VON = GND
VON = GND, VOUT = 0 V, VIN = 1.8 V
VON = VIN or GND
2.1
1
μA
μA
nA
μA
IQ(off)
ISD(off)
ION
100
1
Output Discharge Pull-Down
Resistance
RPD
200
Ω
VON = VIN = 4 V, IOUT = 300 mA
VON = VIN = 3.6 V, IOUT = 300 mA
VON = VIN = 3 V, IOUT = 300 mA
VON = 0.7 V, VIN = 1.6 V, IOUT = 300 mA
VON = 0.7 V, VIN = 1 V, IOUT = 300 mA
VON = VIN = 0.9 V, IOUT = 10 mA
VON = VIN = 0.8 V, IOUT = 10 mA
50
51
80
85
54
90
73
110
309
360
1000
140
186
348
Static Drain-Source
On-Resistance
RDS(ON)
mΩ
VON = VIN = 0.9 V, IOUT = 10 mA,
TJ = 10 ~ 85°C
194
370
VON = VIN = 0.8 V, IOUT = 10 mA,
TJ = 10 ~ 85°C
268
59
750
102
VIN = 3.6 V, IOUT = 300 mA, TJ = 85°C
© 2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FDZ8040L • Rev. C6
4
Switching Characteristics
Symbol
Parameter
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Test Conditions
Typical
22
Unit
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
t
d(on)
t
23
r
VIN = 1.6 V, VON = 0.7 V, CL = 1 μF, RL = 500 Ω
t
109
285
37
d(off)
t
f
t
d(on)
t
35
r
VIN = 1 V, VON = 1.8 V, CL = 1 μF, RL = 500 Ω
VIN = 1.8 V, VON = 1.8 V, CL = 1 μF, RL = 500 Ω
VIN = 2.5 V, VON = 1.8 V, CL = 1 μF, RL = 500 Ω
VIN = 3.3 V, VON = 1.8 V, CL = 1 μF, RL = 500 Ω
VIN = 0.8 V, VON = 0.8 V, CL = 1 μF, RL = 500 Ω
VIN = 0.9 V, VON = 0.9 V, CL = 1 μF, RL = 500 Ω
t
112
332
20
d(off)
t
f
t
d(on)
t
22
r
t
122
296
15
d(off)
t
f
t
d(on)
t
19
r
t
160
295
13
d(off)
t
f
t
d(on)
t
18
r
t
193
305
53
d(off)
t
f
t
d(on)
t
56
r
t
143
532
51
d(off)
t
f
t
d(on)
t
54
r
t
148
525
d(off)
t
f
© 2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FDZ8040L • Rev. C6
5
Typical Performance Characteristics
Figure 7.
Shutdown Current vs. Temperature
Figure 8.
Shutdown Current vs. Supply Voltage
Figure 9.
Off Supply Current vs. Temperature
Figure 10. Off Supply Current vs. Supply Voltage
Figure 11. Quiescent Current vs. Temperature
Figure 12. Quiescent Current vs. Supply Voltage
© 2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FDZ8040L • Rev. C6
6
Typical Performance Characteristics
Figure 13. RON vs. Temperature
Figure 14. RON vs. Supply Voltage
Figure 15. ON-Pin Threshold vs. VIN
Figure 16. VOUT Rise and Fall Time vs.
Temperature at RL=500
Figure 17. VOUT Turn-On and Turn-Off Delay vs.
Figure 18. Forward Bias Safe Operation Area
Temperature at RL=500
© 2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FDZ8040L • Rev. C6
7
Typical Performance Characteristics
Figure 19. Turn-On Response (VIN = 3.3 V, COUT=1 µF, RL=500 Ω)
Figure 20. Turn-Off Response (VIN = 3.3 V, COUT=1 µF, RL=500 Ω)
© 2011 Fairchild Semiconductor Corporation
FDZ8040L • Rev. C6
www.fairchildsemi.com
8
Functional Description
The FDZ8040L is a low-RDS(ON) P-channel load switch
packaged in space-saving 0.8 x 0.8 WLCSP.
of 0.8-4 V. The ON pin, an active HIGH TTL-compatible
input that supports input as low as 0.7 V, controls the
state of the switch.
The core of the device is an 80 mΩ P-channel MOSFET
capable of functioning over a wide input operating range
Applications Information
VIN
VOUT
FDZ8040L
ON
ON
OFF
VIN = 0.8 -4 V
CIN
COUT
GND
RL
Figure 21. Typical Application
Input Capacitor
Output Capacitor
To reduce device inrush current effect, a 0.1 µF ceramic
capacitor, CIN, is recommended close to the VIN pin. A
higher value of CIN can be used to further reduce the
voltage drop experienced as the switch is turned on into
a large capacitive load.
FDZ8040L works without an output capacitor. However,
if parasitic board inductance forces VOUT below GND
when switching off, a 0.1 µF capacitor, COUT, should be
placed between the VOUT and GND pins.
© 2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FDZ8040L • Rev. C6
9
Physical Dimensions
F
0.03 C
E
A
2X
B
D
0.40
A1
Ø0.20
Cu Pad
0.40
BALL A1
Ø0.30
INDEX AREA
0.03 C
Solder Mask
2X
TOP VIEW
RECOMMENDED LAND PATTERN
(NSMD PAD TYPE)
0.06 C
0.292±0.018
0.208±0.021
0.539
0.461
E
0.05 C
C
SEATING PLANE
D
SIDE VIEWS
NOTES:
A. NO JEDEC REGISTRATION APPLIES.
B. DIMENSIONS ARE IN MILLIMETERS.
0.005
C A B
Ø0.260±0.020
4X
C. DIMENSIONS AND TOLERANCE
PER ASME Y14.5M, 1994.
0.40
B
A
(Y)±0.018
D. DATUM C IS DEFINED BY THE SPHERICAL
CROWNS OF THE BALLS.
0.40
F
1 2
E. PACKAGE NOMINAL HEIGHT IS 500 MICRONS
±39 MICRONS (461-539 MICRONS).
(X)±0.018
F. FOR DIMENSIONS D, E, X, AND Y SEE
PRODUCT DATASHEET.
BOTTOM VIEW
G. DRAWING FILNAME: MKT-UC004AFrev1.
Figure 22. 4-Ball, WLCSP, 2 X 2 Array, 0.4 mm Pitch, 250 µm Ball
Product-Specific Dimensions
Product
D
E
X
Y
FDZ8040L
0.8 ±0.03 mm
0.8 ±0.03 mm
0.21 mm
0.21 mm
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/.
© 2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FDZ8040L • Rev. C6
10
© 2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FDZ8040L • Rev. C6
11
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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