FES6J [ONSEMI]
超快整流器;型号: | FES6J |
厂家: | ONSEMI |
描述: | 超快整流器 超快恢复二极管 快速恢复二极管 测试 光电二极管 |
文件: | 总6页 (文件大小:202K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Ultrafast Rectifiers,
Surface Mount,
6 A, 200 V - 600 V
FES6, NRVFES6 Series
Features
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• Very Low Profile: Typical Height of 1.1 mm
• Ultrafast Recovery Time
• Low Forward Voltage Drop
• Low Thermal Resistance
• Very Stable Operation at Industrial Temperature, 150°C
• RoHS Compliant
3
2
• Green Molding Compound as per IEC61249 Standard
• Lead Free in Compliance with EU RoHS 2011/65/EU Directive
• With DAP Option Only
1
TO−277−3LD
CASE 340BQ
• NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
Anode 1
Anode 2
3
Cathode
MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Repetitive Peak Reverse Voltage
V
V
RRM
MARKING DIAGRAM
FES6D
FES6G
FES6J
200
400
600
$Y&Z&3
*
Average Forward Rectified Current
I
6
A
A
F(AV)
Peak Forward Surge Current: 8.3 ms
Single Half Sine−Wave Superimposed
on Rated Load
I
80
FSM
$Y
= ON Semiconductor Logo
= Assembly Plant Code
= Date Code (Year & Week)
= Specific Device Code
FES6D, FES6G, FES6J
&Z
&3
*
Operating Junction Temperature Range
T
J
−55 to
+175
°C
°C
Storage Temperature Range
T
−55 to
+175
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
†
Part Number
FES6D
Top Mark
Package
Shipping
FES6D
NRVFES6D*
FES6G
FES6G
FES6J
TO−277 3L (with DAP Option only)
5000 / Tape & Reel
NRVFES6G*
FES6J
NRVFES6J*
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
April, 2020 − Rev. 4
FES6D/D
FES6, NRVFES6 Series
THERMAL CHARACTERISTICS (Values are at T = 25°C unless otherwise noted) (Note 1)
A
Parameter
Thermal Characteristics, Junction−to−Lead, Thermocouple Soldered to Cathode
Thermal Resistance, Junction−to−Ambient
Symbol
Value
6
Unit
°C/W
°C/W
Y
JL
R
100
q
JA
1. Per JESD51−3 Recommended Thermal Test Board.
ELECTRICAL CHARACTERISTICS (Values are at T = 25°C unless otherwise noted)
A
Value
FES6G
1.20
1.00
2
FES6D
1.05
FES6J
2.2
Symbol
Parameter
Conditions
Unit
V
F
Maximum Instantaneous Forward
Voltage (Note 2)
I = 6 A
F
V
I = 6 A, T = 125°C
0.90
1.80
F
J
I
R
Maximum Reverse Current
T = 25°C
J
mA
at Rated V
R
T = 125°C
J
200
500
C
Typical Junction Capacitance
Typical Reverse Recovery Time
V
= 4 V, f = 1 MHz
60
45
pF
ns
J
R
T
rr
I = 0.5 A, I = 1 A, I = 0.25 A
25
45
F
R
RR
I = 1 A, di/dt = 50 A/ms, V = 30 V
F
R
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse test with PW = 300 ms, 1% duty cycle
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2
FES6, NRVFES6 Series
TYPICAL CHARACTERISTICS
10
1
10
FES6D
FES6G
1
o
o
TA = −55C
TA = −55C
TA = 25oC
0.1
0.1
0.01
TA = 25oC
TA = 75oC
TA = 75oC
TA = 125oC
0.01
0.001
TA = 125oC
TA = 150oC
1.2
TA = 150oC
1.0 1.2
0.001
0.0
0.2
0.4
0.6
0.8
0.0
0.2
0.4
0.6
0.8
1.0
1.4
VF − FORWARD VOLTAGE (V)
VF − FORWARD VOLTAGE (V)
Fig 2. Typical Forward Characteristics for FES6G
Fig 1. Typical Forward Characteristics for FES6D
100
10
TA = 150oC
TA = 125oC
FES6D
FES6J
TA = 75oC
10
1
1
o
TA = −55C
0.1
0.1
TA = 25oC
0.01
0.001
1E−4
TA = 75oC
0.01
TA = 125oC
o
TA = 25oC
TA = 150oC
TA = −55C
0.001
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
VR − REVERSE VOLTAGE (V)
VF − FORWARD VOLTAGE (V)
Fig 4. Typical Reverse Characteristics for FES6D
Fig 3. Typical Forward Characteristics for FES6J
100
100
TA = 150oC
TA = 125oC
FES6G
TA = 150oC
TA = 125oC
FES6J
10
1
10
1
TA = 75oC
TA = 75oC
0.1
0.1
0.01
0.001
0.01
0.001
o
TA = 25oC
o
TA = 25oC
TA = −55C
TA = −55C
0
50 100 150 200 250 300 350 400 450 500 550 600
VR − REVERSE VOLTAGE (V)
0
50 100 150 200 250 300 350 400 450 500 550 600
VR − REVERSE VOLTAGE (V)
Fig 5. Typical Reverse Characteristics for FES6G
Fig 6. Typical Reverse Characteristics for FES6J
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3
FES6, NRVFES6 Series
TYPICAL CHARACTERISTICS
1000
8
7
6
5
4
3
2
1
0
f=1MHz
TL (Cathode)
100
FESD6J
10
FESD6D & FESD6G
TA
1
0.1
1
10
100
0
25
50
75
100
125
150
175
TEMPERATURE (oC)
VR − REVERSE BIAS VOLTAGE (V)
Fig 8. Typical Junction Capacitance
Fig 7. Forward Current Derating Curve
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−277−3LD
CASE 340BQ
ISSUE O
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13861G
TO−277−3LD
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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