FFB10UP20STM [ONSEMI]
10 A、200 V 超快速二极管;
| 型号： | FFB10UP20STM |
| 厂家： | 
ONSEMI |
| 描述： | 10 A、200 V 超快速二极管 超快软恢复二极管 快速软恢复二极管 超快速软恢复能力电源 |
| 文件： | 总7页 (文件大小：882K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
November 2013
FFB10UP20S
10 A, 200 V, Ultrafast Diode
Description
Features
•
•
•
•
Ultrafast with Soft Recovery : < 45 ns
High Reverse Voltage : VRRM = 200 V
Avalanche Energy Rated
Planar Construction
The FFB10UP20S is an ultrafast diode with low forward
voltage drop and rugged UIS capability. This device is
intended for use as freewheeling and clamping diodes in a
variety of switching power supplies and other power switching
applications. It is specially suited for use in switching power
supplies and industrial applications as welder application.
•
RoHS Compliant
Applications
•
•
•
•
Output Rectifiers
SMPS
Free-Wheeling Diode for Motor Application
Power Switching Circuits
1
2
3
D2-PAK
1
1. Anode 2. Cathode 3. Anode
1.Anode 2.Cathode 3.Anode
Absolute Maximum Ratings (per diode) T = 25°C unless otherwise noted
a
Symbol
Parameter
Value
200
200
200
10
Unit
V
VRRM
Peak Repetitive Reverse Voltage
VRWM
VR
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
IF(AV)
IFSM
Average Rectified Forward Current
@ TC = 120°C
A
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
100
A
TJ, TSTG
Operating Junction and Storage Temperature
- 65 to +150
°C
Thermal Characteristics
T = 25°C unless otherwise noted
a
Symbol
Parameter
Max
Unit
RθJC
Maximum Thermal Resistance, Junction to Case
3.0
°C/W
Package Marking and Ordering Information
Part Number
Top Mark
Package Packing Method Reel Size
Tape Width
Quantity
D2-PAK
Reel
N/A
FFB10UP20S
FFB10UP20STM
13" Dia
800
©2005 Fairchild Semiconductor Corporation
FFB10UP20S Rev. C1
www.fairchildsemi.com
1
Electrical Characteristics (per diode) T = 25°C unless otherwise noted
a
Symbol
Parameter
Min.
Typ.
Max.
Units
VF *
IF = 10 A
IF = 10 A
T
C = 25 °C
-
-
-
-
1.15
1.0
V
V
TC = 150 °C
IR
trr
VR = 200 V
VR = 200 V
T
C = 25 °C
-
-
-
-
100
500
µA
µA
*
TC = 150 °C
I = 1 A, diF/dt = 100 A/µs, VR = 30 V
TC = 25 °C
-
-
-
-
35
45
ns
ns
IF = 10 A, diF/dt = 200 A/µs, VR = 130 V
TC = 25 °C
F
ta
IF = 10 A, diF/dt = 200 A/µs, VR = 130 V
TC = 25 °C
TC = 25 °C
-
-
-
15
12
36
-
-
-
ns
ns
nC
tb
Qrr
T
C = 25 °C
WAVL
Avalanche Energy (L = 20 mH)
10
-
-
mJ
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
Test Circuit and Waveforms
Figure 1. Diode Reverse Recovery Test Circuit & Waveform
Figure 2. Unclamped Inductive Switching Test Circuit & Waveform
©2005 Fairchild Semiconductor Corporation
FFB10UP20S Rev.C1
www.fairchildsemi.com
2
Typical Performance Characteristics
Figure 3. Typical Forward Voltage Drop
Figure 4. Typical Reverse Current
50
100
10
TC = 100oC
10
TC = 100oC
1
TC = 25oC
0.1
1
TC = 25oC
0.01
0.001
0.1
0.0
0.5
1.0
1.5
2.0
0
50
100
150
200
Forward Voltage , VF [V]
Reverse Voltage , VR [V]
Figure 5. Typical Junction Capacitance
Figure 6. Typical Reverse Recovery Time
400
60
IF=10A
f = 1 MHz
50
TC=125oC
100
40
30
TC=25oC
10
0.1
20
100
1
10
100
200
300
400
500
Reverse Voltage , VR [V]
diF/dt [A/µs]
Figure 7. Typical Reverse Recovery Current
Figure 8. Forward Current Deration Curve
12
14
IF = 10A
12
10
8
10
DC
8
TC=125oC
6
6
4
2
0
4
TC=25oC
2
0
100
200
300
400
500
100
110
120
130
140
150
Case Temperature, TC [oC]
diF/dt [A/µs]
©2005 Fairchild Semiconductor Corporation
FFB10UP20S Rev.C1
www.fairchildsemi.com
3
Mechanical Dimensions
Figure 9. TO-263 2L (D2-PAK) - 2LD,TO263, SURFACE MOUNT
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002.
4
www.fairchildsemi.com
©2005 Fairchild Semiconductor Corporation
FFB10UP20S Rev.C1
©2005 Fairchild Semiconductor Corporation
FFB10UP20S Rev.C1
5
www.fairchildsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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