FFB5551 [ONSEMI]

NPN多芯片通用放大器;
FFB5551
型号: FFB5551
厂家: ONSEMI    ONSEMI
描述:

NPN多芯片通用放大器

放大器 光电二极管 晶体管
文件: 总6页 (文件大小:314K)
中文:  中文翻译
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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application  
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FFB5551  
Dual-Chip NPN General-Purpose Amplifier  
Features  
• This device is designed for general-purpose high voltage amplifier.  
• E1 is Pin 1.  
E2  
B2  
E2  
C2  
B1  
E1  
C1  
B2  
C2  
B1  
C1  
E1  
SC70-6  
Mark: .P1  
Figure 1. Device Package  
Figure 2. Internal Connection  
Ordering Information  
Part Number  
Top Mark  
Package  
SC70 6L  
Packing Method  
FFB5551  
P1  
Tape and Reel  
Absolute Maximum Ratings(1),(2)  
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-  
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-  
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The  
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.  
Symbol  
VCEO  
Parameter  
Value  
160  
Unit  
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
VCBO  
180  
V
VEBO  
6.0  
V
IC  
Collector Current - Continuous  
200  
mA  
°C  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to 150  
Notes:  
1. These ratings are based on a maximum junction temperature of 150°C.  
2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low-  
duty-cycle operations.  
© 2003 Semiconductor Components Industries, LLC.  
October-2017,Rev. 2  
Publication Order Number:  
FFB5551/D  
Thermal Characteristics(3)  
Values are at TA = 25°C unless otherwise noted.  
Symbol  
PD  
Parameter  
Max.  
200  
1.6  
Unit  
mW  
Total Device Dissipation  
Derate Above 25°C  
mW/°C  
°C/W  
RθJA  
Thermal Resistance, Junction-to-Ambient  
625  
Note:  
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.  
Electrical Characteristics  
Values are at TA = 25°C unless otherwise noted.  
Symbol  
BVCEO  
BVCBO  
BVEBO  
Parameter  
Conditions  
Min.  
160  
180  
6.0  
Max.  
Unit  
V
Collector-Emitter Breakdown Voltage(4) IC = 1.0 mA, IB = 0  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
IC = 100 μA, IE = 0  
IE = 10 μA, IC = 0  
V
V
V
CB = 120 V, IE = 0  
50  
50  
50  
nA  
ICBO  
IEBO  
Collector Cut-Off Current  
Emitter Cut-Off Current  
VCB = 120 V, IE = 0,  
TA = 100°C  
μA  
VEB = 4.0 V, IC = 0  
nA  
VCE = 5 V, IC = 1.0 mA  
VCE = 5 V, IC = 10 mA  
VCE = 5 V, IC = 50 mA  
IC = 10 mA, IB = 1.0 mA  
IC = 50 mA, IB = 5.0 mA  
IC = 10 mA, IB = 1.0 mA  
IC = 50 mA, IB = 5.0 mA  
80  
80  
30  
hFE  
DC Current Gain(4)  
250  
0.15  
0.20  
1.0  
V
CE(sat)  
BE(sat)  
Collector-Emitter Saturation Voltage(4)  
Base-Emitter Saturation Voltage(4)  
V
V
V
1.0  
VCE = 10 V, IC = 10 mA,  
f = 100 MHz  
fT  
Current Gain Bandwidth Product  
Output Capacitance  
100  
300  
6.0  
MHz  
pF  
VCB = 10 V, IE = 0,  
f = 1.0 MHz  
Cobo  
Note:  
4. Pulse test: pulse width 300 μs, duty cycle 2.0%.  
www.onsemi.com  
2
Typical Performance Characteristics  
Ta=1250C  
IC=10IB  
Ta=250C  
10  
100  
Ta=250C  
Ta=-400C  
10  
1
1
Ta=1250C  
Ta=250C  
Ta=-400C  
0.1  
0.1  
1E-4  
1E-3  
0.01  
0.1  
1
1E-3  
0.01  
0.1  
IC[A], COLLECTOR CURRENT  
IC[A], COLLECTOR CURRENT  
Figure 3. DC Current Gain  
Figure 4. Collector-Emitter Saturation Voltage  
10  
0.50  
VCE=5V  
Ta=250C  
0.45  
0.40  
IC=10IB  
Ta=250C  
0.35  
0.30  
0.25  
Ta=250C  
Ta=-400C  
1
Ta=250C  
0.20  
Ta=1250C  
0.15  
Ta=1250C  
0.10  
Ta=-400C  
0.05  
0.00  
0.1  
1E-3  
0.01  
0.1  
1
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
IC[A], COLLECTOR CURRENT  
VBE[V], BASE-EMITTER VOLTAGE  
Figure 5. Base-Emitter Saturation Voltage  
Figure 6. Base-Emitter On Voltage  
www.onsemi.com  
3
Physical Dimensions  
SYMM  
C
L
0.20  
A
2.00  
0.65  
0.50 MIN  
6
4
3
B
PIN ONE  
0.10  
1.25  
1.90  
1
0.30  
0.15  
(0.25)  
0.40 MIN  
0.10  
A B  
1.30  
0.65  
1.30  
LAND PATTERN RECOMMENDATION  
SEE DETAIL A  
1.00  
0.80  
1.10  
0.80  
0.10 C  
0.10  
0.00  
C
2.10 0.30  
SEATING  
PLANE  
NOTES: UNLESS OTHERWISE SPECIFIED  
GAGE  
A) THIS PACKAGE CONFORMS TO EIAJ  
SC-88, 1996.  
PLANE  
(R0.10)  
B) ALL DIMENSIONS ARE IN MILLIMETERS.  
C) DIMENSIONS DO NOT INCLUDE BURRS  
OR MOLD FLASH.  
0.25  
0.10  
D) DRAWING FILENAME: MKT-MAA06AREV6  
0.20  
30°  
0°  
0.46  
0.26  
SCALE: 60X  
Figure 7. 6-LEAD, SC70, EIAJ SC-88, 1.25 MM WIDE  
www.onsemi.com  
4
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  
literature is subject to all applicable copyright laws and is not for resale in any manner.  
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