FFD08S60S-F085 [ONSEMI]
600V，8A，2.1V DPAKSTEALTH™ II 整流器;
| 型号： | FFD08S60S-F085 |
| 厂家： | 
ONSEMI |
| 描述： | 600V，8A，2.1V DPAKSTEALTH™ II 整流器 软恢复二极管 超快速软恢复二极管 局域网 软恢复能力电源 超快速软恢复能力电源 |
| 文件： | 总5页 (文件大小：406K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Rectifier – STEALTHt II
8 A, 600 V
FFD08S60S-F085
The FFD08S60S−F085 is stealth 2 rectifier with soft recovery
characteristics (t < 30 ns). They has half the recovery time of
rr
hyperfast rectifier and are silicon nitride passivated ion−implanted
epitaxial planar construction. This device is intended for use as
freewheeling of boost diode in switching power supplies and other
power switching applications. Their low stored charge and hyperfast
soft recovery minimize ringing and electrical noise in many power
switching circuits reducing power loss in the switching transistors.
www.onsemi.com
Cathode
Anode
Features
• High Speed Switching (Max. t < 30 ns @ I = 8 A)
rr
F
• High Reverse Voltage and High Reliability
• Avalanche Energy Rated
• AEC−Q101 Qualified and PPAP Capable
• Pb−Free and RoHS Compliant
Cathode
(Flange)
Cathode
Anode
DPAK3
CASE 369AS
Applications
• General Purpose
• Switching Mode Power Supply
• Boost Diode in Continuous Mode Power Factor Corrections
• Power Switching Circuits
MARKING DIAGRAM
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Ratings
600
Unit
V
$Y&Z&3&K
F08S60S
V
RRM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RWM
600
V
V
R
600
V
I
Average Rectified Forward Current
8
A
F(AV)
@ T = 115°C
C
I
Non−repetitive Peak Surge Current
60 Hz Single Half−Sine Wave
80
A
FSM
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
T , T
J
Operating Junction and Storage
Temperature
−65 to + 150
°C
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
F08S60S
= Specific Device Code
ORDERING INFORMATION
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Device
FFD08S60−F085
Package
Shipping
Symbol
Parameter
Ratings
Unit
DPAK3
(Pb−Free)
2500 /
Tape & Reel
R
Maximum Thermal Resistance,
Junction to Case
3.0
°C/W
θ
JC
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
January, 2021 − Rev. 4
FFD08S60S−F085/D
FFD08S60S−F085
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
I = 8 A, I = 8 A
T
C
C
= 25°C
= 125°C
−
−
2.1
1.6
2.6
−
V
FM
F
F
(Note 1)
T
I
V
R
= 600 V, V = 600 V
T = 25°C
C
T = 125°C
C
−
−
−
−
100
500
mA
RM
R
(Note 1)
t
t
I
I = 1 A, di/dt = 100 A/ms, V = 30 V
T
T
= 25°C
= 25°C
−
−
−
19
25
30
−
ns
ns
A
rr
rr
rr
F
R
C
C
I = 8 A, di/dt = 200 A/ms, V = 390 V
F
R
−
2.2
0.6
21
S factor
−
−
Q
−
−
nC
ns
A
rr
t
rr
I
rr
I = 8 A, di/dt = 200 A/ms, V = 390 V
T = 125°C
C
−
58
−
F
R
−
4.3
1.3
125
−
−
S factor
−
−
Q
−
−
nC
mJ
rr
W
AVL
Avalanche Energy (L = 40 mH)
20
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse: Test Pulse width = 300 ms, Duty Cycle = 2%.
TEST CIRCUIT AND WAVEFORMS
V
GE
Amplitude and
R
Control dI /dt
G
F
L
DUT
t and t Control I
1
2
F
t
rr
dI
CURRENT
SENSE
F
R
G
t
a
t
b
+
dt
0
V
DD
V
GE
−
IGBT
t
1
0.25 I
RM
t
2
I
RM
Figure 1. trr Test Circuit
Figure 2. trr Waveform and Definitions
I
= 1 A
MAX
L = 40 mH
R < 0.1 W
V
E
= 50 V
DD
2
= 1/2LI [V
/ (V − V )]
R(AVL) DD
AVL
R(AVL)
Q = IGBT (BV
> DUT V
)
1
CES
R(AVL)
V
AVL
L
R
+
V
CURRENT
SENSE
DD
I
L
I
L
Q1
I V
V
DD
DUT
−
t
0
t
1
t
2
t
Figure 3. Avalanche Energy Test Circuit
Figure 4. Avalanche Current and Voltage Waveforms
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2
FFD08S60S−F085
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
C
100
10
1E−4
1E−5
1E−6
1E−7
T
= 125°C
C
T
= 125°C
C
T
C
= 75°C
T
C
= 75°C
1
T
C
= 25°C
T
= 25°C
C
1E−8
1E−9
0.1
0.0 0.4
0.8 1.2
1.6 2.0
2.4 2.8 3.2
0
100
200
300
400
500
600
500
150
V , Forward Voltage (V)
F
V , Reverse Voltage (V)
R
Figure 5. Typical Forward Voltage Drop
Figure 6. Typical Reverse Current
100
90
100
90
f = 1 MHz
I = 8 A
F
80
80
70
60
50
40
70
60
50
40
T = 125°C
C
T
= 75°C
C
30
20
10
0
30
20
10
0
T
C
= 25°C
1
10
100
1000
100
200
di/dt (A/ms)
300
400
V , Reverse Voltage (V)
R
Figure 7. Typical Junction Capacitance
Figure 8. Typical Reverse Recovery Time
12
11
10
9
8
7
6
5
4
3
10
9
I = 8 A
F
8
7
6
5
4
T
C
= 125°C
DC
3
2
1
0
T
C
= 25°C
2
1
T
= 75°C
C
0
100
110
120
130
140
100
200
di/dt (A/ms)
300
400
500
T , Case Temperature (5C)
C
Figure 9. Typical Reverse Recovery Current
Figure 10. Forward Current Deration Curve
STEALTH is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK3 (TO−252 3 LD)
CASE 369AS
ISSUE A
DATE 28 SEP 2022
GENERIC
MARKING DIAGRAM*
XXXXXX
XXXXXX
AYWWZZ
XXXX = Specific Device Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ
= Assembly Lot Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON13810G
DPAK3 (TO−252 3 LD)
PAGE 1 OF 1
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