FFG3105UCX [ONSEMI]
电池 ID 和智能充电监控器;型号: | FFG3105UCX |
厂家: | ONSEMI |
描述: | 电池 ID 和智能充电监控器 电池 监控 |
文件: | 总22页 (文件大小:1408K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
February 2016
FFG3105
Battery ID and Smart Charge Monitor
Features
Description
.
.
.
Two, One-Time-Programmable, 64-Bit Registers for
Unique Identifier Codes.
The FFG3105 battery ID and smart charge monitor chip
is designed for battery packs used in cell phones and
other mobile devices. The FFG3105 has two
programmable 64-bit registers, which can be used to
Precision Voltage and Temperature Measurement
enables Smart Charging Topologies
store
a pack‟s identification code. The FFG3105
Low Power: < 2 µA Shutdown Current
2 µA Standby Current
monitors the cell voltage and temperature providing
precise knowledge of these values. This information can
be used in charging applications to ensure optimal
performance and safety.
< 4.5 µA Average Active Current
Fully Integrated I2C Slave with support for Normal
and Fast Modes with auto increment.
.
The FFG3105 includes an integrated temperature
sensor and battery voltage monitor. The FFG3105 also
includes twelve 16-bit registers which can be used to
store battery parameters and recent history. A system
side fuel gauge like Fairchild‟s FFG1040 can use these
registers to facilitate fast initialization following battery
removal and reinsertion or for battery swaps. All
registers including temperature and voltage readings
can be accessed by the host via I2C in either Standard-
mode or Fast-mode.
.
.
Internal BID redundancy for increased robustness
6-Ball, 2 x 3, 0.5 mm Pitch - Chip Scale Packaging
(WLCSP)
Applications
.
.
Battery Packs
Mobile Devices
Each Battery ID register has an internal redundant copy
to improve robustness and protect against potential
miss programming.
The FFG3105 utilizes a 2 x 3 ball, 0.5 mm pitch,
WLCSP with nominal dimensions of 0.96 x 1.66 mm2.
Ordering Information
Operating
Temperature Range
Packing
Part Number
Package
Method
FFG3105UCX
-40 to 85°C
0.96 x 1.66 mm2, 6-Ball CSP, 0.5 mm Ball Pitch
Tape and Reel
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FFG3105 • Rev. 1.4
Block Diagram
Figure 1.
FFG3105 Block Diagram and Battery Pack
Table 1. Recommended External Components
Component
Description
Typical
Unit
R1
R2
R3
R4
Protection IC ESD Protection and power fluctuation Resistor (1)
Protection IC Protection for reverse connection of charger (1)
VCELP ESD Series Protection Resistor
220
1000
300
1000
100
0.1
Ω
Ω
Ω
VSNS ESD Series Protection Resistor
Ω
R5, R6, R7, R8 SCL and SDA ESD Protection Resistor
Ω
C1
C2(2)
C3
Decoupling Capacitor for power fluctuation (1)
μF
μF
μF
μF
ESD Protection Capacitor
ESD Protection Capacitor(1)
0.1
0.1
C4
Decoupling Capacitor for power fluctuation
0.1
Notes:
1. Please follow the recommendation of the Protection IC vendor for these component values.
2. C2 should consist of two capacitors in series as shown in Figure 1 in the event one of the capacitors were to
short circuit.
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FFG3105 • Rev. 1.4
2
Pin Configuration
SDA
SCL
SCL
SDA
A1
A2
A1
A2
CE
VCELP
VCELP
CE
B1
B2
B2
B1
GND
VSNS
VSNS
GND
C2
C1
C2
C1
TOP VIEW
BOTTOM VIEW
Figure 2.
Ball Assignments
Pin Definitions
Name
CE
Position
Type
Description
Chip Enable, Connected to Battery Protection IC and used to
enable and disable the device. This pin should not be left floating.
B1
C1
A2
Digital I/O
Ground
Device Ground. Connected to Battery Cell Anode
I2C Serial Clock, I2C communication clock input. This pin should
not be left floating, use with 2-10 k pull up resistor.
GND
SCL
Digital I/O
I2C Serial Data, Bi-directional I2C serial data line. This pin should
not be left floating, use with 2-10 k pull up resistor.
SDA
A1
B2
Digital I/O
Power
Power Input. Decoupled with 0.1 μF to GND and connected to
Battery Cell Cathode through a series protection resistor.
VCELP
Voltage Sense. Battery Voltage Measurement Sense ADC Input.
Connected to Battery Cell Cathode through series protection
resistor.
VSNS
C2
Sense Input
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FFG3105 • Rev. 1.4
3
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Positive Battery Supply Voltages
Min.
Max.
Unit
VCELP
VGND
VI/O
VGND - 0.5
VCELP - 6.0
VGND - 0.5
-40
VGND + 6.0
VCELP + 0.5
VGND + 6.0
+85
V
V
Negative Analog Supply Voltage
All Digital Input / Output Signals
V
TA
Operating Free-air Temperature
°C
°C
°C
°C
kV
V
TJ|MAX
TSTG
TL
Maximum Junction Temperature
+150
Storage Temperature Range
-65
+150
Lead Soldering Temperature, 10 Seconds
Human Body Model, ANSI/ESDA/JEDEC JS-001-2012
Charged Device Model, JESD22-C101
+260
2
500
15
8
ESD
Air Gap
IEC 6100-4-2 System ESD, Pins VIN(3)
Contact
kV
kV
Note:
3. Pins should be protected by external TVS devices when tested for IEC compliance.
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to Absolute Maximum Ratings. The recommended operating conditions
assume the following: VCELP = 2.5 V to 4.5 V, TA = -40°C to +85°C, unless otherwise noted.
Symbol
Parameter
Min.
Max.
4.5
Unit
Battery Supply Voltage
Device Programming Voltage
2.5
5.5
20
V
V
VCELP
6.0
VBAT_SLEW Battery Supply Voltage Slew Rate
V/ms
kΩ
pF
RI2CPU
Cb
I2C Pull up Resistor to VPU (SDA, SCL)
I2C Bus Capacitance for each pin
Operating Free-air Temperature
Operating Junction Temperature
4.7
10
400
+85
+85
TA
-40
-40
°C
TJ
°C
Thermal Properties
Junction-to-ambient thermal resistance is a function of application and board layout. This data is measured with four-
layer 2s2p boards in accordance to JEDEC standard JESD51. Special attention must be paid not to exceed junction
temperature TJ(max) at a given ambient temperature TA.
Symbol
Parameter
Typical
Unit
θJA
θJB
Junction-to-Ambient Thermal Resistance (1in.2 pad of 2 oz. copper)
Junction-to-PCB Thermal Resistance
70
20
°C/W
°C/W
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FFG3105 • Rev. 1.4
4
DC Electrical Characteristics
The Recommended Operating Conditions for DC Electrical Characteristics assume VCELP = 2.5 V to 4.5 V and
TA = -20°C to 70°C, unless otherwise noted. Typical values are at TA = 25°C, VCELP = 3.8 V. VPU = VCELP. Min. / Max.
values are guaranteed by design and/or characterization for process variations and the temperature range of
TA= -20°C to 70°C.
Symbol
Parameter
Conditions
Min. Typ.
Max.
Unit
0 VIN VCELP;
VCELP = 2.5 to 4.5 V
IIN
Input Leakage Current on Digital I/O Pins
0.5
µA
VIN or VOUT= 4.5 V;
VCELP = 0
IOFF
Power-Off Leakage Current (Shutdown)
0.2
< 2.0
µA
µA
Standby Mode Current(4,10)
Active Mode Average Current(4,5,10)
2.0
4.3
4.0
7.0
VIN = 3.6 V;
VCELP = 2.5 to 4.5 V
ICC
Fast Mode(400 KHz) I2C Controller SDA, SCL, (TA = -40°C to 85°C)
VIL
VIH
Low-Level Input Voltage(8, 9)
High-Level Input Voltage(8, 9)
-0.50
0.65
V
V
1.05
0
4.50
0.4
VCELP >2 V
VCELP <2 V
Low-Level Output Voltage at 3 mA Sink
Current (Open Drain)(6,9)
VOL
VPU
V
V
0.2 x VCELP
External Pull Up Voltage Range
1.62
-10
4.50
Input Current of Each I/O Pin, Input Voltage
0.26 V to 2.34 V
Capacitance for Each I/O Pin(10)
II
10
10
µA
pF
CI
CE (TA = -40°C to 85°C)
VIL
Low-Level Input Voltage
-0.5
0.3 x VCELP
VCELP+0.5
V
V
0.7 x
VCELP
VIH
High-Level Input Voltage
Input Current, Input Voltage 0.26 V to
2.34 V
Capacitance(10)
II
-10
10
10
µA
pF
CI
Continued on the following page...
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FFG3105 • Rev. 1.4
5
DC Electrical Characteristics (Continued)
The Recommended Operating Conditions for DC Electrical Characteristics assume VCELP = 2.5 V to 4.5 V and
TA = -20°C to 70°C, unless otherwise noted. Typical values are at TA = 25°C, VCELP = 3.8 V. VPU = VCELP. Min. / Max.
values are guaranteed by design and/or characterization for process variations and the temperature range of
TA= -20°C to 70°C.
Symbol
Parameter
Conditions
Min. Typ.
Max.
Unit
Data Acquisition Performance Parameters
TMIN, TMAX Temperature Range
-40
2.0
85
°C
GTEMP
Temperature Sensor Voltage Gain(10)
mV/°C
VCELP = 2.5 to 4.5 V,
TA = + 25°C
-2
+2
°C
TA = +0°C
TA = +50°C
TA = -40°C
TA = +80°C
-3
-3
-4
-4
+3
+3
°C
°C
°C
°C
μV
mV
%
TDIE
Temperature Measurement Error (10,11)
+4
+4
LSB
EVR
Voltage Sense Least Significant Bit
Voltage Measurement Resolution
Voltage Gain Error (% of |VBAT- 3.5 V|)
122
1
VCELP = 2.5 to 4.5
VCELP = 2.5 to 4.5
VGERR
-0.85
-20
+0.85
VCELP = 2.5 to 4.5 V
TJ = -20 °C to +70°C
VOS
Voltage Offset Error
+20
mV
Notes:
4. Assumes I2C access at 400 kHz rate.
5. Average active current is based on request for voltage and temperature measurement once per every 2 seconds.
6. The SDA and SCL pins are open drain with external pull-up resistor tied to VPU. Recommended pull-up resistor
range is 4.7 k to 10 k.
7. VIH(max.) = VPU + 0.5 or 5.5 V which-ever is lower.
8. VIH and VIL have been chosen to be fully compliant to I2C specification at VPU = 1.8V ± 10%. At
2.25 V ≤ VPU ≤ 3.63 V the VIL(max.) provides 200 mV of noise margin to the required VOL(max.) of the
transmitter.
9. Parts may be ordered for enhanced I2C operation in systems where the device I2C pull-up resistors are biased
from a voltage greater than 3.6 V. Please contact Fairchild for parts programmed with this feature.
10. Guaranteed by design; not tested in production.
11. Accuracy (expressed in °C) = the difference between the FFG3105 output temperature and the measured
temperature.
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FFG3105 • Rev. 1.4
6
AC Electrical Characteristics (I2C Controller SDA, SCL)
The AC electrical characteristics assume VCELP = 2.5 V to 4.5 V.
Fast Mode
Symbol
Parameter
Min.
Max.
Unit
fSCL
tHD;STA
tLOW
SCL Clock Frequency
0
400
kHz
µs
µs
µs
µs
µs
ns
ns
ns
ns
ns
µs
µs
ns
Hold Time (Repeated) Start Condition
Low Period of SCL Clock
0.6
1.3(12)
0.6
tHIGH
tSU;STA
tHD;DAT
tSU;DAT
tPS
High Period of SCL Clock
Set-up Time for Repeated Start Condition
Data Hold Time (see Figure 3)
0.6
0
0.9
Data Set-up Time (see Figure 3)
100(13)
Set-up Time Required by SDA Input Buffer (Receiving Data)
Out Delay Required by SDA Output Buffer (Transmitting Data)
Rise Time of SDA and SCL Signals
0
tPH
300
(14,15)
tr
20+0.1Cb
300
300
(14,15)
tf
Fall Time of SDA and SCL Signals
20+0.1Cb
tSU;STO
tBUF
Set-up Time for Stop Condition
0.6
1.3
0
Bus Free Time between a Stop and Start Conditions
Pulse Width of Spikes that Must Be Suppressed by the Input Filter
tSP
50
Notes:
12. The FFG3105 can accept clock signals with tLOW as low as 1.1 µs, provided that the received SDA signal
tHD;DAT+ tr/f≤1.1 µs. The FFG3105 features a 0 ns SDA input set-up time; therefore, this parameter is not included
in the above equation.
13. A Fast-Mode I2C Bus® device can be used in a Standard-Mode I2C bus system, but the requirement that
t
SU;DAT ≥250 ns must be met. This is automatically the case if the device does not stretch the LOW period of the
SCL signal. If a device does stretch the LOW period of the SCL signal, it must output the next data bit to the SDA
line tr_max + tSU;DAT = 1000 + 250 = 1250 ns (according to the Standard-Mode I2C Bus specification) before the
SCL line is released.
14. Cb equals the total capacitance of one bus line in pF.
15. The FFG3105 ensures that the SDA signal OUT must coincide with SCL LOW for worst-case SCL tf max time of
300 ns. This requirement prevents data loss by preventing SDA-OUT transitions during the undefined region of
the falling edge of SCL. Consequently, the FFG3105 fulfills the following requirement from the I2C specification
(page 77, Note 2): “A device must internally provide a hold time of at least 300 ns for the SDA signal (referred to
the VIHmin of the SCL signal) to bridge the undefined region of the falling edge of SCL.”
16. FFG3105 I2C slave is fully compliant the NXP (Phillips) I2C specification, Rev. 0.3 UM10204 (2007) for both
Standard Mode and Fast Mode.
17. The FFG3105 is tested and qualified for a max speed of 400 Kbps/s, Fast Mode.
Timing Diagrams
Figure 3.
Definition of Timing for Full-Speed Mode Devices on the I2C Bus
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FFG3105 • Rev. 1.4
7
System Applications Diagram
BATTERY PACK
PACK+
R3
R4
VCELP
VSNS
R1
FFG3105
APPLICATION
PROCESSOR
Battery
Cell
C1
REF
On Die
Temp
C4
TBIAS
TBAT
INT_N
INT_N
SCL
Sensor
SCL
GND
SDA
SDA
VDD
ADC
Pre
Amp
VLDO
CLDO
FFG1040
C2
INT_N
SCL
BATTERY
CHARGER
DO
CO
Battery ID
&
Registers
C3
SCL
SDA
I2C Save
and
Control
SDA
RMSCL
RMSDA
PACK+
VBAT
VM
DGND GND/SRN
SRP
CE
R2
PACK-
RSENSE
PTC Fuse
Figure 4.
Systems Applications Diagram
Functional Description
Overview
Temperature Sensing and Reporting
The FFG3105 includes
programmable fuse locked register to enable unique
battery identification.
a
64-bit one-time factory
The FFG3105 measures the battery temperature using
its on board temperature sensor. This temperature
information can be used to improve battery-charging
performance. Accurate understanding of the battery
temperature is critical to maintain optimal charging rates
and to ensure safe operation during high current
charging. The FFG3105 temperature sensor is accurate
to within ±3°C over the operating ranges that support
battery charging.
The FFG3105 uses an Analog-to-Digital Converter (ADC)
to monitor the battery cell voltage and temperature.
Battery Pack Identification
The FFG3105 has two 64-bits, one-time programmable
registers for Battery ID (BID). These registers can be
programmed with customized values by battery lot or
phone model. With the ability to uniquely identify
specific batteries, systems can selectively enable
special features after verifying that the system battery is
valid.
User Definable Registers
The FFG3105 includes twelve 16-bit registers, which
can be written to and read by the host. These registers
are provided to allow important history or other user
information to be stored in the battery pack. If used in
conjunction with the FFG1040, Fuel Gauge, the
FFG3105 registers can be used to support the
FFG1040‟s save and restore feature, by storing critical
battery parameters and fuel gauging information. This
information is used when a battery is removed and re-
inserted or when a user swaps between several
batteries.
Each register has an internal redundant copy used to
improve robustness and detect potential mismatches.
Voltage Monitoring
The integrated ADC allows battery terminal voltage
monitoring with
a high degree of accuracy. The
FFG3105 has been designed for integration into the
battery pack, which allows it to directly measure the cell
voltage. This allows the host system to know what the
voltage is at the battery cell. It eliminates the uncertainty
introduced by system side gauge measurements, which
include series resistance of the protection circuitry, pack
terminals and series trace resistance. To achieve
optimal charging performance it is important for the host
to accurately know the internal cell voltage.
With the ability to identify the battery and store fuel
gauging history, the system side fuel gauge can initialize
with zero learning time to achieve optimal accuracy. The
FFG3105 is powered directly from the battery pack‟s
internal terminal voltage. Therefore, the values in the
FFG3105 registers are retained even when the battery
voltage drops below the systems shut down voltage. If
the battery voltage drops below the battery protection
threshold and the battery is locked out, the FFG3105
loses power and the values in these registers are lost.
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FFG3105 • Rev. 1.4
8
off when CE = 0 to guarantee a typical quiescent
current of ≤ 1 µA.
Programming the 64-Bit ID Code
The FFG3105 includes two 64-bit, one-time, eFuse
programmable registers to allow for a unique ID code to
be permanently stored in this register.
Wake and Sleep
The FFG3105 also supports WAKE and SLEEP modes
that can be used for system debug. In WAKE mode the
entire device is turned on and left on until the SLEEP
mode is requested. In WAKE mode the internal
Bandgap, Oscillator and LDO are enabled and the
current increases.
Programming the FFG3105 requires knowledge of the
Lock and Unlock keywords. The appropriate lock and
unlock 32-bit keyword must be written to the
KEYWORD_MSW, KEYWORD_LSW registers before a
Lock or Unlock command is issued and programming is
attempted.
Calculating Average Power
Average power consumption of the FFG3105 is a function
of the frequency of voltage and temperature read
requests. During measurement time the FFG3105 uses
180 µA, when at rest, in STANDBY it uses 2 µA.
When programmed, a redundant copy is created. The
redundant copy is used when the BID is read back to
improve robustness and detect errors.
These register can be programmed and verified by
Fairchild before shipping or with the proper procedure
be programmed by the customer before the battery cell
is attached. Please contact your Fairchild sales
representative to set the custom code for your
application or to receive detailed information on
programming the FFG3105.
Average power consumption can be calculated using
the following equation and graphic.
ꢀꢁꢂꢃꢄꢁꢅꢆꢇꢂꢂꢁꢈꢉ ꢊ ꢋꢌꢍꢎꢏ ꢐ ꢎꢑꢎꢒꢓꢔꢕ ꢖ ꢓꢍꢏ
ꢐ ꢎꢑꢎꢎꢎꢓꢕ ꢖ ꢅꢒꢑꢎꢏ ꢐ ꢋꢗꢂ
ꢘ ꢎꢑꢎꢒꢓꢔꢕ ꢘ ꢎꢑꢎꢎꢎꢓꢕꢙꢙꢚꢗꢂ
(1)
where Tr = Time between read requests in seconds (S)
Power Modes
The FFG3105 chip has three power modes, ACTIVE,
STANDBY and SHUTDOWN. The FFG3105 moves in
and out of these modes automatically based on
requests from the Host for voltage and temperature
readings and the external chip enable, CE.
Standby Power Mode
Figure 5.
Timing Relationship Diagram
During periods of inactivity when the host is not
requesting voltage or temperature readings the
FFG3015 enters STANDBY mode to save power. In
STANDBY, the FFG3105, the I2C bus, and registers are
still available and accessible. The Host may read or
write the User Definable registers while in STANDBY.
For example, if the system were to request voltage and
temperature readings from the FFG3105 once every 6
seconds, the average power would be:
ꢀꢁꢂꢃꢄꢁꢅꢆꢇꢂꢂꢁꢈꢉ ꢊ ꢋꢌꢍꢎꢏ ꢅ ꢐ ꢅꢎꢑꢎꢒꢓꢔꢕ ꢖ ꢓꢍꢏ
ꢐ ꢎꢑꢎꢎꢎꢓꢕ ꢖ ꢅꢒꢑꢎꢏ ꢐ ꢋꢔꢕ
ꢘ ꢎꢑꢎꢒꢓꢔꢕ ꢘ ꢎꢑꢎꢎꢎꢓꢕꢙꢙꢚꢔꢕ
(2)
Active Power Mode
The FFG3105 enters this mode when the host requests
a measurement of the battery voltage or temperature. It
takes < 28 ms for the FFG3105 to measure both voltage
and temperature and write them into the output
registers. The measure automatically moves the device
to ACTIVE. After the measurements are made the
device returns to STANDBY on its own.
ꢀꢁꢂꢃꢄꢁꢅꢆꢇꢂꢂꢁꢈꢉ ꢛ ꢜꢑꢝꢅꢏ
(3)
For a case where the Host system requests voltage and
temperature once per second, the average current is
6.06 µA. A summary of the active current vs. sampling
interval is shown in Figure 6.
Shutdown Mode and Chip Enable
Average Current vs. Sampling Interval
The FFG3105 has an active high chip enable, CE,
which must be high for chip to function in either
STANDBY or ACTIVE modes. When the FFG3105 is
used internal to the battery pack, this pin is connected to
the gate driver of the protection device used to control
the discharge FET. This signal is high whenever the
battery pack is functioning within acceptable operating
range.
2.5E-05
2.0E-05
1.5E-05
1.0E-05
5.0E-06
0.0E+00
When the FET is turned-off to protect the battery cell the
FFG3105 is also disabled and goes to its lowest power
condition, SHUTDOWN. This helps to reduce the under-
voltage discharge the FFG3105 applies to the internal
cell. All internal current paths from VCELP, the chip
supply, to GND, which drain the battery cell, are turned
0
1
2
3
4
5
6
Sampling Interval - TR in Seconds
Figure 6.
Average Active Current
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FFG3105 • Rev. 1.4
9
Battery and Device Protection
Input ESD Protection
Cell Protection
In a removable battery pack, SCL and SDA, the I2C
clock and data pins of the host bus are externally
exposed. It is recommended that a protection network
consisting of a Zener diode and resistors, or some
equivalent, be connected to the serial interface pins to
protect the pack from ESD events.
The FFG3105 has been designed to be integrated
directly into a single-cell Lithium-ion battery pack and
meet all the necessary safety requirements. This is
accomplished by having separate terminals (VCELP and
VSNS) to power the device, and sense the cell voltage
respectively. Each of these connections to the battery cell
requires a series resistor to limit the current if an internal
short occurs. This is needed because the FFG3105 is
connected directly to the cell cathode and anode.
Additional filter capacitors may also be required. It is
recommended that series capacitors be used to eliminate
a single capacitor short from shorting out the cell.
The maximum pull-up voltage of 5.5 V is supported for
device programming, so it is recommended that the
breakdown voltage of the protection device be > 5.6 V.
The devices needed for cell and ESD protection are
represented in the schematic in Figure 1.
Figure 7.
Voltage and Temperature Data Request
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FFG3105 • Rev. 1.4
10
Device Programming
Programming
The FFG3105 has two 64-bit battery identifications
values that can be programmed into the device, This
section outlines the procedure that should be followed to
program the device.
Once the BID‟s have been verified the Program
command is issued using an I2C write to the CONTROL
register. Before issuing the Program command the
supply voltage, VCELP(18), must be increased to 5.5 V.
Once programming has been initiated an internal state
machine controls the part and completes the
programming process. Programming both BID‟s takes
approximately 5.2 ms but the actual time will depend on
the number of 1‟s in the BID codes.
Keyword Registers
The device must first be unlocked by writing the 32-bit
Keyword
with
the
appropriate
value
into
KEYWORD_MSW and KEYWORD_LSW registers at
I2C addresses 0x06 and 0x07. Next an Unlock
command must be written to the CONTROL register to
perform the Unlock. This enables the user to write into
the BID registers.
Reading
the
TEST_STATUS
register
bit
fuse_prgm_done can monitor the status of the
programming sequence. Once completed this bit is set
to 1.
BID Registers
Each BID uses four 16-bit registers that total 64-bits.
The first BID, BID0, is located at I2C address 0x20,
0x21, 0x22, and 0x23. The second BID, BID1 is located
at 0x24, 0x25, 0x26, and 0x27. Once unlocked one or
both of these BID must be written and then verified by
reading it back.
Verification
Once programmed, the voltage is lowered back to 3.8 V
and reset. After reset the BID‟s can be read and their
internal status checks to determine if the programming
was successful.
Note:
18. VCELP should be capable of supplying a minimum of
61 mA.
Figure 8.
Device Programming
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FFG3105 • Rev. 1.4
11
I2C Interface
The I2C interface is slave controllers with a standard 7-
bit device address that supports read, incremental read,
write and incremental write. This allows an external host
to control the FFG3105 and configure it.
THD;STA
Slave Address
MS Bit
SDA
SCL
The I2C supports:
Figure 10. START Bit
.
.
.
.
7-Bit Standard Device Address
100 kbit/s Standard Mode
400 kbit/s Fast Mode
A transaction ends with a STOP condition, which is
defined as SDA transitioning from 0 to 1 with SCL
HIGH.
Auto Increment to support Burst-Reads and Burst-
Writes for the most used registers.
Slave Releases
Master Drives
tHD;STO
ACK(0) or
NACK(1)
The FFG3105‟s SCL line is an input and its SDA line is
a bi-directional open-drain output; it can only pull down
the bus when active. The SDA line only pulls LOW
during data reads and when signaling ACK. All data is
shifted in MSB (bit 7) first.
SDA
SCL
Slave Address
Figure 11. STOP Bit
The I2C Device ID is 7-bits and is constructed as shown
in the table below. There is always an 8th bit, which
indicates if the operation being done to the slave is
either a read or write. A read is active-high and
indicated by „1‟, the write is active-low and indicated by
a „0‟.
During a read from the FFG3105, the master issues a
Repeated Start after sending the register address and
before resending the slave address. The Repeated Start
is a 1-to-0 transition on SDA while SCL is HIGH.
Slave Releases
tSU;STA
tHD;STA
ACK(0) or
NACK(1)
SLADDR
MS Bit
SDA
SCL
The slave device ID will be configurable with a device ID
at address 8‟h6E for write and 8‟h6F for read.
Table 2. I2C Slave Address Byte
Bit
7
6
5
4
3
2
1
0
Figure 12. Repeated STOP Timing
Value
0
1
1
0
1
1
1
R/W
Auto–Incrementing
The external host can also utilize auto-increment to do
sequential reads or writes of the internal registers.
Other slave addresses can be accommodated upon
request. Contact your Fairchild representative.
Bus Timing
When the auto-incremented address is not with the
supported range of registers one of four responses can
be expected.
As shown in Figure 9, data is normally transferred when
SCL is LOW. Data is clocked in on the rising edge of
SCL. Typically, data transitions at or shortly after the
falling edge of SCL to allow ample time for the data to
set up before the next SCL rising edge.
.
.
.
If write or read is to an illegal or out of range
address the response to the host is a NACK.
Data change allowed
If a write auto increments to an out of range
address the response to the host is a NACK.
SDA
If a read auto increment to an out of range address
the read returns data with a value of 0xFFFF.
TH
TSU
SCL
Figure 9.
Data Transfer Timing
Each bus transaction begins and ends with SDA and
SCL HIGH. A transaction begins with a START
condition, which is defined as SDA transitioning from 1
to 0 with SCL HIGH.
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FFG3105 • Rev. 1.4
12
I2C Read Write Procedures
The following figures illustrate compatible I2C write and read sequences.
Figure 13. I2C Read Sequence
During an I2C read, the master must acknowledge the first byte read for proper operation. Missing or corrupted clocks
during an I2C operation, may result in the FFG3105 continuously asserting the SDA line. The I2C master must support
the Bus Clear operation in systems where SCL integrity is not guaranteed (for example in systems with a removable
battery pack which can result in interrupted I2C transactions).
Figure 14. I2C Write Sequence
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FFG3105 • Rev. 1.4
13
PACK+
C2A
C2B
PACK-
(bottom)
PACK+
SDA
SCL
PACK-
PACK-
(top)
PACK-
(top)
R8
R6
D1
D2
R7
R5
GND
(top)
GND
(bottom)
SDA
SCL
C4
GND
(top)
VCELP
CE
R3
R4
VSNS
Figure 15. Recommended Layout
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FFG3105 • Rev. 1.4
14
Register Information
Any registers or bit fields marked as RESERVED or reserved should be left at their default values and not modified.
Table 3. Register Map
Registers
Register Name
Address
Type
Description
Part Identification
PART_ID
0x00
0x01
RO
R/W
RO
CONTROL
STATUS
Control
0x02
Status
CELL_VOLTAGE
0x03
RO
Cell Voltage Measurement
Pack Temperature
Reserved for future use
Keyword Least Significant Word
Keyword Most Significant Word
Test Control
PACK_TEMPERATURE
CELL_CURRENT
KEYWORD_LSW
KEYWORD_MSW
TEST_CONTROL
TEST_STATUS
SPARE
0x04
RO
0x05
N/A
R/W
R/W
R/W
RO
0x06
0x07
0x08
0x09
Test Status
0x0A
R/W
R/W
R/W
R/W
-
Spare
USER_00 – USER_11
BATTERY_ID0
0x10-0x1B
0x20-0x23
0x24-0x27
0x30-0x57
User Configurable
Unique Identification Code 0
Unique Identification Code 1
Reserved
BATTERY_ID1
RESERVED
Control and Status Registers for Mission Mode and Test
The registers in this section are used to store information used, created, and maintained by the top level of the chip.
They are defined in the address range 0x00 – 0x0A. These registers are powered by the battery and can be written or
read when the core is asleep or awake.
Table 4. PART_ID Register (0x00)
Bit Name
rev_id[2:0]
Bit
Type
Default
Description
2:0
7:3
RO
RO
RO
3‟b000
Device Revision
part_id[4:0]
5‟b10000 Part Identification
device_id[7:0]
15:8
8‟h6E
I2C Device ID
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FFG3105 • Rev. 1.4
15
Table 5. CONTROL Register (0x01)
Bit Name
Bit
Type
Default
Description
Device Command
0000 – NOP (used with TEST_CONTROL)
0001 – Wake
0010 – Sleep
0011 – Program (eFuse)
0100 – Measure
0101 – Lock eFuse Group
0110 – Unlock eFuse Group
0111 – Reset
command
3:0
R/W/SC
4‟b0000
1000 – Reserved
1001 – Reserved
1010 – Reserved
1011 – Reserved
1100 – Reserved
1101 – Reserved
1110 – Reserved
1111 – Test (reserved)
Block Group for Lock/Unlock
00 – None
01 – BID
10 – AFE Trim
11 – Reserved
Note: Only applies with commands 0x5 and 0x6
eFuse_group
reserved
5:4
7:6
R/W
R/W
2‟b00
2‟b00
Reserved
The following fields are based on the command chosen
Commands: NOP, Wake, Sleep, Lock, Unlock, Reset, Program
reserved
15:8
R/W
8‟h00
N/A
Commands: Measure
Measure Source Sub Command Bit-0
0 – No voltage measurement
1 – Measure Voltage
8
9
R/W
R/W
1‟b0
1‟b0
1‟b0
Measure Source Sub Command Bit-1
0 – No temperature measurement
1 – Measure Temperature
meas_scmd[2:0]
Measure Source Sub Command Bit-2
0 – No current measurement
1 – Measure Current (Not implemented in FFG3105)
10
R/W
R/W
meas_scmd[7:3]
Commands: Test
test_scmd[2:0]
reserved
15:11
5‟b00000 Can be treated as “Don‟t Cares”
11:8
R/W
R/W
4‟b0000
4‟b0000
Reserved
15:12
Can be treated as “Don‟t Cares”
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FFG3105 • Rev. 1.4
16
Table 6. STATUS Register (0x02)
Type
Bit
Type
Default
Description
Core Power Status
wake_status
0
RO
1‟b0
0 – AFE core is asleep.
1 – AFE core is awake.
Busy Status
busy_status
keep_awake
tdie_valid
1
2
3
4
5
6
7
8
RO
RO
RO
RO
RO
RO
RO
RO
1‟b0
1‟b0
1‟b0
1‟b0
1‟b0
1‟b1
1‟b1
1‟b0
0 – chip core is not busy
1 – chip core is busy
Keep Awake
0 – core is not kept awake
1 – core is to be kept awake
Die Temperature Measurement Valid
0 – current pack temperature invalid
1 – current pack temperature valid
Battery Voltage Measurement Valid
0 – current cell voltage invalid
1 – current cell voltage valid
vbat_valid
Battery Current Measurement Valid
0 – current cell current invalid
1 – current cell current valid
ibat_valid
(reserved)
Battery ID Lock Status
0 – unlocked
1 – locked
bid_lock_status
at_lock_status
bid0_status
AFE Trim Lock Status
0 – unlocked
1 – locked
BID0 Status
0 – BID0 Redundancy Check Failed
1 – BID0 Redundancy Check Passed
BID1 Status
bid1_status
reserved
9
RO
RO
1‟b0
0 – BID1 Redundancy Check Failed
1 – BID1 Redundancy Check Passed
15:8
8‟hXX
Reserved
Table 7. CELL_VOLTAGE Register (0x03)
Type
Bit
Type
Default
Description
Battery Voltage Measurement Unsigned Short
MSB = a[15] = 22 = 4 V
cell_voltage
15:0
RO
16‟h0000 LSB = a[0] = 2-13 = 122.07 µV
+FS = 16‟b1111111111111111 = 7.99987793 V
- FS = 16‟b0000000000000000 = 0 V
Table 8. PACK_TEMPERATURE Register (0x04)
Type
Bit
Type
Default
Description
Temperature Measurement Signed Short
MSB = a[15] = -28 = -256 mV
pack_temperature
15:0
R
16‟h0000 LSB = a[4] = 2-3 = 0.125 mV
+FS = 255.9921875 mV
-FS = -255.9921875 mV
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FFG3105 • Rev. 1.4
17
Table 9. CELL_CURRENT Register (0x05)
Type
cell_current
Note:
Bit
Type
Default
Description
Description
15:0
R
16‟h0000 Reserved
19. Not supported in the FFG3105.
Table 10. KEYWORD_LSW Register (0x06)
Type
Bit
Type
Default
keyword[15:0]
15:0
R/W
16‟hFFFF Protection Keyword Least Significant Word
Table 11. KEYWORD_MSW Register (0x07)
Type
Bit
Type
Default
Description
keyword[31:0]
15:0
R/W
16‟h0000 Protection Keyword Most Significant Word
Table 12. TEST_CONTROL Register (0x08)
Type
reserved
Bit
Type
Default
Description
Description
Description
15:0
R/W
16‟h0000 Reserved
Table 13. TEST_STATUS Register (0x09)
Type
reserved
Bit
Type
Default
15:0
RO
16‟h0000 Reserved
Table 14. SPARE Register (0x0A)
Type
Bit
Type
Default
User Defined
15:0
R/W
16‟h0000 Spare scratch pad register
User Battery Parameter Registers
The 12 registers in this section can be used to hold the Save/Restore content of the FFG1040. If the FFG3105 is not
used with the FFG1040, these become user definable registers. These registers sit in the VCELP domain and retain
their value if the battery pack has been properly charged and does not experience an over-discharge or over-current
condition.
These registers can be written or read when the core is asleep or awake.
Table 15. USER_00 – USER_011 - Register (0x10 – 0x1B)
Type
Bit
Type
Default
Description
User Defined
15:0
R/W
16‟h0000 12 User Defined R/W registers
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FFG3105 • Rev. 1.4
18
Battery Identification Registers
These two sets of four 16-bit registers are assigned to hold two 64-bit battery identifications. These should be
concatenated such that BID0[63:0] = {BID_03[15:0], BID_02[15:0], BID_01[15:0], BID_00[15:0]} and BID1[63:0] =
{BID_13[15:0], BID_12[15:0], BID_11[15:0], BID_10[15:0]}. These registers can only be written when the core is
awake and wake_status = 1‟b1. They can be read when the core is asleep or awake.
Table 16. BID_00 Register (0x020)
Type
Bit
Type
Default
Description
bid_data_00[15:0]
15:0
RO
16‟h0000 Battery ID 0 Register – Bytes 0 & 1
Table 17. BID_01 Register (0x021)
Type
Bit
Type
Default
Description
bid_data_01[31:16]
15:0
RO
16‟h0000 Battery ID 0 Register – Bytes 2 & 3
Table 18. BID_02 Register (0x022)
Type
Bit
Type
Default
Description
bid_data_02[47:32]
15:0
RO
16‟h0000 Battery ID 0 Register – Bytes 4 & 5
Table 19. BID_03 Register (0x023)
Type
Bit
Type
Default
Description
bid_data_03[63:48]
15:0
RO
16‟h0000 Battery ID 0 Register – Bytes 6 & 7
Table 20. BID_10 Register (0x024)
Type
Bit
Type
Default
Description
bid_data-10[15:0]
15:0
RO
16‟h0000 Battery ID 1 Register – Bytes 0 & 1
Table 21. BID_11 Register (0x025)
Type
Bit
Type
Default
Description
bid_data_11[31:16]
15:0
RO
16‟h0000 Battery ID 1 Register – Bytes 2 & 3
Table 22. BID_12 Register (0x026)
Type
Bit
Type
Default
Description
bid_data_12[47:32]
15:0
RO
16‟h0000 Battery ID 1 Register – Bytes 4 & 5
Table 23. BID_13 Register (0x027)
Type
Bit
Type
Default
Description
bid_data_13[63:48]
15:0
RO
16‟h0000 Battery ID 1 Register – Bytes 6 & 7
Notes:
20. R/W = register value may be read or written.
21. RO = register value that should only be read; attempting a write may cause unpredictable behavior.
22. R/W1CO = register value may be read; writing a 1 clears a bit in another register.
The table below pertains to the Marketing Outline drawing on the following page.
Product Specific Dimensions
E (mm)
D (mm)
X (mm)
Y (mm)
0.960 ± 0.030
1.660 ± 0.030
0.230 ± 0.018
0.330 ± 0.018
© 2014 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FFG3105 • Rev. 1.4
19
0.03 C
F
(Ø0.250)
Cu Pad
E
A
2X
(Ø0.350)
SOLDER MASK
OPENING
B
D
A1
(1.00)
(0.50)
BALL A1
INDEX AREA
0.03 C
2X
TOP VIEW
RECOMMENDED LAND PATTERN
(NSMD PAD TYPE)
0.06 C
0.332±0.018
0.250±0.025
0.625
0.539
E
0.05 C
C
D
SEATING PLANE
SIDE VIEWS
NOTES:
A. NO JEDEC REGISTRATION APPLIES.
B. DIMENSIONS ARE IN MILLIMETERS.
0.005
C A B
Ø0.315 +/- .025
6X
C. DIMENSIONS AND TOLERANCE
PER ASMEY14.5M, 1994.
0.50
0.50
D. DATUM C IS DEFINED BY THE SPHERICAL
CROWNS OF THE BALLS.
C
1.00
B
A
(Y) ±0.018
E. PACKAGE NOMINAL HEIGHT IS 582 MICRONS
±43 MICRONS (539-625 MICRONS).
1 2
F
F. FOR DIMENSIONS D, E, X, AND Y SEE
PRODUCT DATASHEET.
(X) ±0.018
BOTTOM VIEW
G. DRAWING FILNAME: MKT-UC006AFrev3.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
www.onsemi.com
相关型号:
©2020 ICPDF网 联系我们和版权申明