FFH30US30DN [ONSEMI]
60A，300V，Stealth™ 二极管;
| 型号： | FFH30US30DN |
| 厂家： | 
ONSEMI |
| 描述： | 60A，300V，Stealth™ 二极管 软恢复二极管 快速软恢复二极管 局域网 |
| 文件： | 总8页 (文件大小：2104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STEALTH Diode
30 A, 300 V
FFH30US30DN
Description
The FFH30US30DN is a STEALTHt diode optimized for low loss
performance in output rectification. The STEALTH family exhibits
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low reverse recovery current (I
), low V and soft recovery
F
RM(REC)
under typical operating conditions.
This device is intended for use as an output rectification diode
in Telecom power supplies and other power switching applications.
ANODE 2
CATHODE
ANODE 1
Lower V and I
reduces diode losses.
F
RM(REC)
Formerly developmental type TA49449.
Features
CATHODE
(BOTTOM SIDE
METAL)
• Soft Recovery
• Fast Recovery
t /t > 0.45
b a
trr < 50 ns
175°C
300 V
20 mJ
TO−247−3LD
CASE 340CK
• High Operating Temperature
• Reverse Voltage
K
• Avalanche Energy Rating
• This is a Pb−Free Device
Applications
• Switch Mode Power Supplies
• Power Factor Correction
• Uninterruptable Power Supplies
• Motor Drives
A1
A2
MARKING DIAGRAM
• Welders
$Y&Z&3&K
30US30DN
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
30US30DN
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2003
1
Publication Order Number:
January, 2021 − Rev. 1
FFH30US30DN/D
FFH30US30DN
DEVICE MAXIMUM RATINGS (per leg) (T = 25°C unless otherwise noted)
C
Rating
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
Value
300
Unit
V
V
RRM
RWM
V
300
V
V
R
300
V
Average Rectified Forward Current (T = 160°C)
I
30
A
C
F(AV)
Total Device Current (Both Legs)
60
Repetitive Peak Surge Current (20 kHz Square Wave)
Non−repetitive Peak Surge Current (Halfwave 1 Phase 60 Hz)
Power Dissipation
I
70
A
A
FRM
I
325
FSM
P
D
230
W
mJ
°C
Avalanche Energy (1 A, 40 mH)
E
20
AVL
Operating and Storage Temperature Range
T , T
J
−55 to 175
STG
Maximum Temperature for Soldering
T
L
PKG
Leads at 0.063in (1.6 mm) from Case for 10 s
Package Body for 10 s, See Application Note AN−7528
T
300
260
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Parameter
Symbol
Max
0.65
30
Unit
°C/W
°C/W
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R
q
JC
R
q
JA
PACKAGE MARKING AND ORDERING INFORMATION
Device
Device Marking
30US30DN
Package
Tape Width
Quantity
30
FFH30US30DN
TO−247−3LD
N/A
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2
FFH30US30DN
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF STATE CHARACTERISTICS
Instantaneous Reverse Current
I
R
V
R
= 300 V
T
= 25°C
−
−
−
−
100
1
mA
C
T
C
= 125°C
mA
ON STATE CHARACTERISTICS
Instantaneous Forward Voltage
V
F
I = 30 A
F
T
T
= 25°C
−
−
0.93
0.8
1.0
V
C
= 125°C
0.87
C
DYNAMIC CHARACTERISTICS
Junction Capacitance
C
t
V
= 10 V, I = 0 A
−
410
−
pF
ns
J
R
F
SWITCHING CHARACTERISTICS
Reverse Recovery Time
I = 1 A, dI /dt = 100 A/ms, V = 15 V
F
−
−
−
−
−
−
−
−
−
−
−
−
−
29
32
50
55
−
rr
F
R
I = 30 A, dI /dt = 100 A/ms, V = 15 V
F
F
R
Reverse Recovery Time
t
rr
I = 30 A,
46
ns
A
F
dI /dt = 200 A/ms,
F
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
I
I
I
5.3
140
77
−
RM(REC)
V
= 195 V,
= 25°C
R
C
T
Q
−
nC
ns
−
RR
t
rr
I = 30 A
−
F
dI /dt = 200 A/ms
F
Softness Factor (t /t )
S
0.45
9
−
b
a
V
= 195 V,
= 125°C
R
C
T
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
−
A
RM(REC)
Q
400
54
−
nC
ns
−
RR
t
rr
I = 30 A
−
F
dI /dt = 1000 A/ms
F
Softness Factor (t /t )
S
0.49
32
−
b
a
V
= 195 V,
= 125°C
R
C
T
Maximum Reverse Recovery Current
Reverse Recovered Charge
−
A
RM(REC)
Q
930
−
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FFH30US30DN
TYPICAL PERFORMANCE CURVES (per leg)
60
1000
50
40
100
10
1
30
20
10
0
0.1
0.01
0.3
0.4 0.5
0.6
0.7
0.8
0.9
1.0 1.1
50
100
150
200
250
300
V , Forward Voltage (V)
F
V , Reverse Voltage (V)
R
Figure 1. Forward Current vs. Forward Voltage
Figure 2. Reverse Current vs. Reverse Voltage
60
70
60
50
40
30
50
40
30
20
10
0
20
10
0
0
200
400
600
800
1000 1200
0
10
20
30
40
50
60
I , Forward Current (A)
F
dI /dt, Current Rate of Change (A/ms)
F
Figure 4. ta and tb Curves vs. dIF/dt
Figure 3. ta and tb Curves vs. Forward Current
40
35
35
30
25
20
15
10
5
30
25
20
15
10
5
0
0
10
20
30
40
50
60
200
400
600
800
1000
1200
dI /dt, Current Rate of Change (A/ms)
F
I , Forward Current (A)
F
Figure 6. Maximum Reverse Recovery Current
vs. dIF/dt
Figure 5. Maximum Reverse Recovery Current
vs. Forward Current
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4
FFH30US30DN
TYPICAL PERFORMANCE CHARACTERISTICS (per leg) (continued)
1.4
0.8
0.7
1.2
1.0
0.6
0.5
0.4
0.8
0.6
0.4
0.2
0.3
0.2
0
200
400
600
800
1000
1200
200
400
600
800
1000
1200
dI /dt, Current Rate of Change (A/ms)
F
dI /dt, Current Rate of Change (A/ms)
F
Figure 8. Reverse Recovery Charge vs. dIF/dt
Figure 7. Reverse Recovery Softness Factor
vs. dIF/dt
−12
−14
−16
70
65
1600
1400
1200
60
−18
−20
−22
55
50
1000
800
45
600
400
−24
−26
40
35
30
200
0
−28
10
V , Reverse Voltage (V)
0.03 0.1
1
100
25
50
75
100
125
150
175
T , Case Temperature (°C)
C
R
Figure 10. Maximum Reverse Recovery Current
and trr vs. Case Temperature
Figure 9. Junction Capacitance vs. Reverse
Voltage
35
30
25
20
15
10
5
0
158 160 162 164 166 168 170 172 174 176
T , Case Temperature (°C)
C
Figure 11. DC Current Derating Curve
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5
FFH30US30DN
TYPICAL PERFORMANCE CHARACTERISTICS (per leg) (continued)
1.0
0.1
0.01
−4
−3
−1
−5
−2
0
1
10
10
10
10
10
10
10
t, Rectangular Pulse Duration (s)
Figure 12. Normalized Maximum Transient Thermal Impedance
TEST CIRCUITS AND WAVEFORMS
V
AMPLITUDE AND
GE
G
R
CONTROL dI /dt
F
L
t AND t Control I
1
2
F
dI
dt
t
rr
F
I
F
DUT CURRENT
SENSE
t
b
t
a
R
G
0
+
V
DD
V
GE
−
0.25 I
RM
IGBT
t
1
I
RM
t
2
Figure 14. trr Waveforms and Definitions
Figure 13. trr Test Circuit
I = 1 A
L = 40 mH
R < 0.1 W
V
E
= 50 V
AVL
Q = IGBT (BV
DD
2
= 1/2LI [V
/(V
− V )]
R(AVL
R(AVL)
R(AVL) DD
V
AVL
> DUT V
)
1
CES
R
L
+
V
CURRENT
SENSE
I
L
I
L
DD
I V
Q
1
V
DD
DUT
−
t
t
1
t
2
t
0
Figure 16. Avalanche Current and Voltage
Waveforms
Figure 15. Avalanche Energy Test Circuit
STEALTH is trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
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