FFP30S60STU [ONSEMI]
30A,600V,STEALTH™ II 二极管;![FFP30S60STU](http://pdffile.icpdf.com/pdf2/p00368/img/icpdf/FFP30S60STU_2246255_icpdf.jpg)
型号: | FFP30S60STU |
厂家: | ![]() |
描述: | 30A,600V,STEALTH™ II 二极管 软恢复二极管 超快速软恢复二极管 局域网 |
文件: | 总8页 (文件大小:3315K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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2013 年11 月
FFP30S60S
30 A、600 V STEALTHTM II 代二极管
特性
•
说明
FFP30S60S 为带软恢复特性的STEALTH™ II 代二极管。它采用
氮化硅钝化的离子布植式外延平面结构。
Stealth 恢复trr = 40 ns (@ IF = 30 A)
• 最大正向电压, VF = 2.6 V (@ TC = 25°C)
此器件在开关电源及其他电源开关应用中用作续流或升压二极
管。其低存储电荷和超高速软恢复特性可最大程度降低多种电源
开关电路中的振铃和电气噪声,由此降低开关晶体管中的功耗。
•
600 V 反向电压和高可靠性
• 雪崩能量额定值
• 符合RoHS 标准
应用
• 一般用途
•
SMPS, 功率开关电路
• 用于连续模式功率因数校正器中的升压二极管
引脚分配
TO-220-2L
1. 阴极
2. 阳极
1. 阴极
2. 阳极
绝对最大额定值TC = 25°C 除非另有说明
符号
参数
额定值
单位
VRRM
VRWM
VR
600
V
重复反向峰值电压
反向峰值工作电压
直流阻断电压
600
600
30
V
V
A
IF(AV)
正向平均整流电流
@ TC = 103°C
非重复浪涌峰值电流
60 Hz 单侧半正弦波
IFSM
300
A
TJ, TSTG
°C
工作和存储温度范围
-65 至+150
热性能
符号
参数
最大值
单位
RθJC
1.1
°C/W
结点- 壳体的最大热阻
封装标识与定购信息
器件编号
正面标记
封装
包装方法
卷尺寸
带宽
数量
FFP30S60STU
FFP30S60S
TO-220-2L
塑料管
不适用
不适用
50
©2007 飞兆半导体公司
FFP30S60S Rev.C1
1
www.fairchildsemi.com
电气特性TC = 25°C 除非另有说明
符号
参数
最小值
典型值
最大值
单位
IF = 30 A
T
C = 25°C
TC = 125°C
C = 25°C
-
-
2.1
1.6
2.6
-
V
FM1
V
IF = 30 A
R = 600 V
VR = 600 V
V
T
-
-
-
-
100
500
I
RM1
μA
TC = 125°C
trr
IF = 1 A, diF/dt = 100 A/μs, VR = 30 V
TC = 25°C
-
25
35
ns
trr
Irr
-
-
-
-
28
2.4
0.9
34
40
-
-
ns
A
IF = 30 A, diF/dt = 200 A/μs, VR = 390 V
TC = 25°C
软度因子S
Qrr
-
nC
trr
Irr
-
-
-
-
75
6.3
0.9
236
-
-
-
-
ns
A
IF = 30 A, diF/dt = 200 A/μs, VR = 390 V
雪崩能量(L = 40 mH)
TC = 125°C
软度因子S
Qrr
nC
mJ
WAVL
20
-
-
注意:
1: 脉冲:测试脉宽= 300 μs, 占空比= 2%
测试电路与波形
图1. 二极管反向恢复测试电路与波形
图2. 非箝位感性开关测试电路与波形
©2007 飞兆半导体公司
FFP30S60S Rev.C1
2
www.fairchildsemi.com
典型性能特征
图3. 典型正向电压降与正向电流的关系
图4. 典型反向电流与反向电压的关系
1000
200
TC = 125oC
100
TC = 125oC
100
75oC
25oC
TC = 75oC
10
10
1
TC = 25oC
0.1
0.01
1
10
100
200
300
400
500
600
0
1
2
3
4
5
Forward Voltage, VF [V]
Reverse Voltage, VR [V]
图5. 典型结电容
图6. 典型反向恢复时间与di /dt 的关系
F
100
350
Typical Capacitance
at 0V = 271 pF
TC = 125oC
280
210
140
70
80
TC = 75oC
60
TC = 25oC
40
0
0.1
20
100
1
10
100
150
200
diF/dt [A/μs]
250
300
Reverse Voltage, VR [V]
图7. 典型反向恢复电流与di /dt 的关系
图8. 正向电流降额曲线
F
70
10
60
50
40
30
20
10
0
8
TC = 125oC
6
TC = 75oC
4
TC = 25oC
2
0
25
50
75
100
125
150
100
150
200
diF/dt [A/μs]
250
300
Case temperature, TC [oC]
©2007 飞兆半导体公司
FFP30S60S Rev.C1
www.fairchildsemi.com
3
典型性能特征
图9. 归一化最大瞬态热阻抗
©2007 飞兆半导体公司
FFP30S60S Rev.C1
www.fairchildsemi.com
4
机械尺寸
图10. TO-220 2L - 2LD, TO220, JEDEC TO-220 VARIATION AC
封装图纸作为一项服务,提供给考虑飞兆半导体元件的客户。具体参数可能会有变化,且不会做出相应通知。请注意图纸上的版本和/
或日期,并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件,尤其是其中涉及飞兆公司
产品保修的部分。
随时访问飞兆半导体在线封装网页,可以获取最新的封装图纸:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-0B2
©2007 飞兆半导体公司
FFP30S60S Rev.C1
www.fairchildsemi.com
5
6
www.fairchildsemi.com
©2007 飞兆半导体公司
FFP30S60S Rev.C1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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