FFPF10F150STU [ONSEMI]
10A，1500V，阻尼二极管;
| 型号： | FFPF10F150STU |
| 厂家： | 
ONSEMI |
| 描述： | 10A，1500V，阻尼二极管 局域网 高压 二极管 |
| 文件： | 总5页 (文件大小：193K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FFPF10F150S
10 A, 1500 V, Damper Diode
Features
• High Speed Recovery t = 170 ns (@ I = 1 A)
RR
F
• Max Forward Voltage, V = 1.6 V (@ T = 25°C)
F
C
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• 1500 V Reverse Voltage and High Reliability
• Low Forward Voltage
• This Device is Pb−Free and is RoHS Compliant
Applications
1
2
• Suitable for Damper Diode in Horizontal Deflection Circuits
1. Cathode
2. Anode
ABSOLUTE MAXIMUM RATINGS
T
C
= 25°C unless otherwise noted
Symbol
Parameter
Rating
Unit
VRRM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
1500
V
VRWM
IF(AV)
1500
10
V
A
Average Rectified Forward Current
@ TC = 125°C
1
2
IFSM
Non−repetitive Peak Surge Current
60Hz Single Half−Sine Wave
100
A
TO−220, 2−Lead
CASE 221AS
°C
TJ, TSTG
Operating Junction and Storage
Temperature
− 65 to
+175
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
MARKING DIAGRAM
$Y&Z&3&K
F10F150S
$Y
&Z&3
&K
= ON Semiconductor Logo
= Data Code (Year & Week)
= Lot
F10F150S
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2000
1
Publication Order Number:
March, 2019 − Rev. 3
FFPF10F150S/D
FFPF10F150S
THERMAL CHARACTERISTICS T = 25°C unless otherwise noted
C
Symbol
Parameter
Maximum Thermal Resistance, Junction to Case
Max.
Unit
°C/W
RθJC
3.0
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Packing Method
Reel Size
N/A
Tape Width
Quantity
30
FFPF10F150STU
F10F150S
TO−220F−2L
Tube
N/A
ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
C
Parameter
Conditions
Min.
Typ.
Max.
Unit
V
V
Maximum Instantaneous Forward Voltage
F
−
−
−
−
1.6
1.4
(Note 1)
T
C
T
C
= 25°C
= 125°C
I = 10 A
F
I = 10 A
F
I
ꢀ
A
Maximum Instantaneous Reverse Current
R
−
−
−
−
10
80
(Note 1)
T
C
T
C
= 25°C
= 125°C
@ rated V
R
t
Maximum Reverse Recovery Time (I = 1 A, di /dt = 50 A/ꢀ s, V = 30 V)
−
−
−
−
170
250
ns
ns
RR
F
F
R
t
Maximum Forward Recovery Time (I = 6.5 A, di /dt = 50 A/ꢀ s)
F F
FR
V
FRM
Maximum Forward Recovery Voltage
−
−
14
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse: Test Pulse Width = 300 ꢀ s, Duty Cycle = 2%
Test Circuit and Waveforms
Figure 1. Diode Reverse Recovery Test Circuit & Waveform
Figure 2. Unclamped Inductive Switching Test Circuit & Waveform
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2
FFPF10F150S
TYPICAL CHARACTERISTICS
100
10
100
10
T = 125°C
J
1
0.1
T = 125°C
J
T = 100°C
J
1
T = 25°C
J
T = 25°C
J
0.01
0.1
0.0
0.001
0.4
0.8
1.2
1.6
0
300
600
900
1200
1500
2.0
Forward Voltage, V [V]
Reverse Voltage, V [V]
R
F
Figure 3. Typical Forward Voltage Drop
Figure 4. Typical Reverse Current
200
180
160
400
300
Typical Capacitance
at 0 V = 150 pF
di/dt = 50 A/ꢀ s
140
120
100
80
200
100
0
di/dt = 100 A/ꢀ s
60
40
20
0
0.1
1
10
100
1
2
3
4
5
6
7
8
9
10
Reverse Voltage, V [V]
Forward Voltage, I [A]
F
R
Figure 5. Typical Junction Capacitance
Figure 6. Typical Reverse Recovery Time
12
10
8
2000
1500
1000
500
0
di/dt = 100 A/ꢀ s
6
4
di/dt = 50 A/ꢀ s
2
0
1
2
3
4
5
6
7
8
9
10
25
50
75
100
125
150
175
Forward Current, I [A]
Case Temperature, T [°C]
F
C
Figure 7. Typical Stored Charge
Figure 8. Forward Current Deration Curve
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220 Fullpack, 2−Lead / TO−220F−2FS
CASE 221AS
ISSUE O
DATE 29 FEB 2012
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON67438E
TO−220 FULLPACK, 2−LEAD / TO−220F−2FS
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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© Semiconductor Components Industries, LLC, 2019
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