FFPF10UP60STU [ONSEMI]
10 A、600 V 超快速二极管;型号: | FFPF10UP60STU |
厂家: | ONSEMI |
描述: | 10 A、600 V 超快速二极管 超快软恢复二极管 快速软恢复二极管 局域网 |
文件: | 总5页 (文件大小:190K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
FFPF10UP60S
10 A, 600 V Ultrafast Diode
Description
The FFPF10UP60S is an ultrafast diode with low forward voltage
drop and rugged UIS capability. This device is intended for use as
freewheeling and clamping diodes in a variety of switching power
supplies and other power switching applications. It is specially suited
for use in switching power supplies and industrial applications as
welder and UPS application.
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Features
• Ultrafast Recovery, t = 40 ns (@ I = 1 A)
1
2
RR
F
1. Cathode
2. Anode
• Max Forward Voltage, V = 2.2 V (@ T = 25°C)
F
C
• 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• This Device is Pb−Free and is RoHS Compliant
Applications
• General Purpose
• SMPS, Power Switching Circuits
• Free−Wheeling Diode for Motor Application
• Welder, UPS
1
2
TO−220, 2−Lead
CASE 221AS
ABSOLUTE MAXIMUM RATINGS
T
C
= 25°C unless otherwise noted
Symbol
Parameter
Rating
Unit
MARKING DIAGRAM
VRRM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
600
V
VRWM
IF(AV)
600
10
V
A
Average Rectified Forward Current
@ TC = 60°C
IFSM
Non−repetitive Peak Surge Current
60Hz Single Half−Sine Wave
50
A
°C
TJ, TSTG
Operating Junction and Storage
Temperature
− 65 to
+175
$Y&Z&3&K
F10UP60S
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
$Y
&Z&3
&K
= ON Semiconductor Logo
= Data Code (Year & Week)
= Lot
F10UP60S
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
March, 2019 − Rev. 3
FFPF10UP60S/D
FFPF10UP60S
THERMAL CHARACTERISTICS T = 25°C unless otherwise noted
C
Symbol
Parameter
Maximum Thermal Resistance, Junction to Case
Max.
Unit
°C/W
RθJC
4.5
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Packing Method
Reel Size
N/A
Tape Width
Quantity
30
FFPF10UP60STU
F10UP60S
TO−220F−2L
Tube
N/A
ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
C
Parameter
Conditions
Min.
Typ.
Max.
Unit
V
Maximum Instantaneous Forward Voltage
F
(Note 1)
I = 10 A
T = 25°C
C
−
−
−
−
2.2
2.0
V
F
C
I = 10 A
T = 100°C
F
I
Maximum Instantaneous Reverse Current
R
(Note 1)
@ rated V
T = 25°C
C
−
−
−
−
100
500
mA
R
C
T = 100°C
t
I = 1 A, di /dt = 100 A/μs, V = 30 V
T = 25°C
C
−
−
25
ns
RR
F
F
R
t
I
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovery Charge
−
−
−
34
1.0
17
40
1.5
30
ns
A
nC
RR
RR
RR
Q
(I = 8 A, di /dt = 200 A/ms, V = 390 V)
F
F
R
t
Maximum Reverse Recovery Time
(I =10 A, di /dt = 200 A/ms, V = 390 V)
−
58
−
ns
RR
F
F
R
W
AVL
Avalanche Energy (L = 40 mH)
20
−
−
mJ
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse: Test Pulse Width = 300 ms, Duty Cycle = 2%
Test Circuit and Waveforms
Figure 1. Diode Reverse Recovery Test Circuit & Waveform
Figure 2. Unclamped Inductive Switching Test Circuit & Waveform
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2
FFPF10UP60S
TYPICAL PERFORMANCE CHARACTERISTICS
T
C
= 25°C unless otherwise noted
30
10
1000
100
10
T
C
= 100°C
T
C
= 100°C
1
T
C
= 25°C
1
T
C
= 25°C
0.1
0.01
1E−3
0.1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
100
200
300
400
500
600
Forward Voltage, V [V]
Reverse Voltage, V [V]
R
F
Figure 3. Typical Forward Voltage Drop
Figure 4. Typical Reverse Current
50
70
60
50
40
I = 10 A
Typical Capacitance
at 0V = 51.4 pF
F
T
C
= 25°C
25
1
0.1
100
150
200 250 300 350 400 450 500
1
10
100
Reverse Voltage, V [V]
di /dt [A/ms]
F
R
Figure 5. Typical Junction Capacitance
Figure 6. Typical Reverse Recovery Time
10
9
8
7
6
5
4
3
2
1
0
12
I = 10 A
F
T
C
= 25°C
10
8
6
4
2
0
100
150
200 250 300 350 400 450 500
25
50
75
100
125
150
175
di /dt [A/ms]
F
Case Temperature, T [°C]
C
Figure 7. Typical Reverse Recovery Current
Figure 8. Forward Current Derating Curve
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220 Fullpack, 2−Lead / TO−220F−2FS
CASE 221AS
ISSUE O
DATE 29 FEB 2012
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON67438E
TO−220 FULLPACK, 2−LEAD / TO−220F−2FS
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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rights of others.
© Semiconductor Components Industries, LLC, 2019
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