FFSB3065B-F085 [ONSEMI]
汽车碳化硅 (SiC) 肖特基二极管，650 V;
| 型号： | FFSB3065B-F085 |
| 厂家： | 
ONSEMI |
| 描述： | 汽车碳化硅 (SiC) 肖特基二极管，650 V 肖特基二极管 |
| 文件： | 总7页 (文件大小：342K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Silicon Carbide (SiC)
Schottky Diode – EliteSiC,
30 A, 650 V, D2, D2PAK-2L
Cathode
Anode
Schottky Diode
FFSB3065B-F085
Description
Cathode
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size & cost.
Cathode
Anode
2
D PAK2 (TO−263−2L)
CASE 418BK
MARKING DIAGRAM
Features
• Max Junction Temperature 175°C
• Avalanche Rated 144 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
AYWWZZ
FFSB
3065B
• No Reverse Recovery / No Forward Recovery
• AEC−Q101 Qualified and PPAP Capable
A
YWW
ZZ
= Assembly Plant Code
= Date Code (Year & Week)
= Lot Code
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
FFSB3065B
= Specific Device Code
Compliant
Applications
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
• Automotive HEV−EV Onboard Chargers
• Automotive HEV−EV DC−DC Converters
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
February, 2023 − Rev. 5
FFSB3065B−F085/D
FFSB3065B−F085
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Value
650
144
73
Unit
V
V
RRM
Peak Repetitive Reverse Voltage
E
AS
Single Pulse Avalanche Energy (Note 1)
Continuous Rectified Forward Current @ T < 25°C
mJ
A
I
F
C
Continuous Rectified Forward Current @ T < 139°C
30
C
I
Non-Repetitive Peak Forward Surge Current
1100
1000
120
A
A
A
T
= 25°C, 10 ms
= 150°C, 10 ms
F, Max
C
C
T
I
Non-Repetitive Forward Surge Current
Half-Sine Pulse, t = 8.3 ms
p
F,SM
T
C
= 25°C
Ptot
Power Dissipation
T
T
= 25°C
246
41
W
W
°C
C
= 150°C
C
T , T
Operating and Storage Temperature Range
−55 to +175
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. E of 144 mJ is based on starting T = 25°C, L = 0.5 mH, I = 24 A, V = 50 V.
AS
J
AS
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
R
Thermal Resistance, Junction to Case, Max
0.61
°C/W
q
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Forward Voltage
Test Condition
I = 30 A, T = 25°C
Min
−
Typ
1.38
1.6
1.72
0.5
1
Max
1.7
2.0
2.4
40
80
120
−
Unit
V
F
V
F
C
I = 30 A, T = 125°C
−
F
C
I = 30 A, T = 175°C
−
F
C
I
R
Reverse Current
V
R
V
R
V
R
= 650 V, T = 25°C
−
mA
C
= 650 V, T = 125°C
−
C
= 650 V, T = 175°C
−
2
C
Q
Total Capacitive Charge
Total Capacitance
V = 400 V
−
74
nC
pF
C
C
V
R
V
R
V
R
= 1 V, f = 100 kHz
= 200 V, f = 100 kHz
= 400 V, f = 100 kHz
−
1280
139
108
−
−
−
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Part Number
Top Marking
Package
Shipping*
2
FFSB3065B−F085
FFSB3065B
D PAK2
800 / Tape & Reel
(Pb-Free / Halogen Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D
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2
FFSB3065B−F085
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
10−5
10−6
60
40
20
0
T
J = −55oC
TJ = 25 o
J = 75 o
C
T
C
T
= 175 o
C
J
TJ = 175 o
TJ = 125 o
C
T
= 125 o
C
10−7
10−8
10−9
J
C
T
= 75 o
C
J
T
= 25 o
C
J
T
= −55oC
J
0.0
0.5
1.0
1.5
2.0
2.5
3.0
100
200
300
400
500
600 650
VF, FORWARD VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
250
200
150
100
50
300
250
200
150
100
50
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.7
D = 1
0
25
0
25
50
75
100
125
150
175
50
75
100
125
150
175
, CASE TEMPERATURE (5C)
TC
, CASE TEMPERATURE (5C)
TC
Figure 3. Current Derating
Figure 4. Power Derating
120
90
60
30
0
5000
1000
100
50
0
100
200
300
400
500
600 650
0.1
1
10
100
650
VR, REVERSE VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 6. Capacitance vs. Reverse Voltage
Figure 5. Capacitive Charge vs. Reverse
Voltage
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3
FFSB3065B−F085
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
30
20
10
0
0
100
200
300 400
500
600 650
VR, REVERSE VOLTAGE (V)
Figure 7. Capacitance Stored Energy
2
1
DUTY CYCLE−DESCENDING ORDER
D=0.5
PDM
0.1
D=0.2
D=0.1
D=0.05
D=0.02
t1
t2
0.01
NOTES:
Z
q
JC
(t) = r(t) x R
q
JC
D=0.01
R
q
JC
= 0.61 5C/W
Peak T = P
x Z (t) + T
q
JC C
SINGLE PULSE
J
DM
Duty Cycle, D = t /t
1
2
1E−3
10−6
10−5
10−4
t, RECTANGULAR PULSE DURATION (sec)
10−3
10−2
10−1
1
Figure 8. Junction-to-Case Transient Thermal Response Curve
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4
FFSB3065B−F085
TEST CIRCUIT AND WAVEFORMS
L = 0.5 mH
R < 0.1 W
V
DD
= 50 V
EAVL = 1/2LI2 [V
/ (V − V )]
R(AVL) DD
R(AVL)
Q1 = IGBT (BV
> DUT V
)
CES
R(AVL)
V
AVL
L
R
+
V
CURRENT
SENSE
DD
I
L
I
L
Q1
I V
DUT
V
DD
−
t
0
t
1
t
2
t
Figure 9. Unclamped Inductive Switching Test Circuit & Waveform
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK2 (TO−263−2L)
CASE 418BK
ISSUE O
DATE 02 AUG 2018
GENERIC
MARKING DIAGRAM*
XXXXXXXXG
AYWW
XXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON93788G
D2PAK2 (TO−263−2L)
PAGE 1 OF 1
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