FFSD1065B-F085 [ONSEMI]
汽车碳化硅 (SiC) 肖特基二极管，650 V;
| 型号： | FFSD1065B-F085 |
| 厂家： | 
ONSEMI |
| 描述： | 汽车碳化硅 (SiC) 肖特基二极管，650 V 肖特基二极管 |
| 文件： | 总6页 (文件大小：410K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Silicon Carbide (SiC)
Schottky Diode – EliteSiC,
10 A, 650 V, D2, DPAK
1, 3 Cathode
2 Anode
Schottky Diode
FFSD1065B-F085
3
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size & cost.
1
2
DPAK
CASE 369AS
MARKING DIAGRAM
Features
• Max Junction Temperature 175°C
• Avalanche Rated 49 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
FFS
D1065B
AYWWZZ
• No Reverse Recovery / No Forward Recovery
• AEC−Q101 Qualified and PPAP Capable
FFSD1065B
A
Y
WW
ZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Assembly Lot Code
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Automotive HEV−EV Onboard Chargers
• Automotive HEV−EV DC−DC Converters
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
February, 2023 − Rev. 6
FFSD1065B−F085/D
FFSD1065B−F085
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Value
650
49
Unit
V
V
RRM
Peak Repetitive Reverse Voltage
E
AS
Single Pulse Avalanche Energy (Note 1)
Continuous Rectified Forward Current @ T < 150°C
mJ
A
I
F
10
C
Continuous Rectified Forward Current @ T < 135°C
13.5
650
570
45
C
I
Non-Repetitive Peak Forward Surge Current
A
A
A
T
= 25°C, 10 ms
= 150°C, 10 ms
F, Max
C
C
T
I
Non-Repetitive Forward Surge Current
C
Half-Sine Pulse, t = 8.3 ms
p
F,SM
T
= 25°C
Ptot
Power Dissipation
T
T
= 25°C
98
16
W
W
C
= 150°C
C
T , T
Operating and Storage Temperature Range
−55 to +175
60
°C
J
STG
TO−247 Mounting Torque, M3 Screw
Ncm
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. E of 49 mJ is based on starting T = 25°C, L = 0.5 mH, I = 14 A, V = 50 V.
AS
J
AS
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
R
Thermal Resistance, Junction to Case, Max
1.53
°C/W
q
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Forward Voltage
Test Condition
I = 10 A, T = 25°C
Min
−
Typ
1.38
1.6
1.72
0.5
1
Max
1.7
2.0
2.4
40
80
160
−
Unit
V
F
V
F
C
I = 10 A, T = 125°C
−
F
C
I = 10 A, T = 175°C
−
F
C
I
R
Reverse Current
V
R
V
R
V
R
= 650 V, T = 25°C
−
mA
C
= 650 V, T = 125°C
−
C
= 650 V, T = 175°C
−
2
C
Q
Total Capacitive Charge
Total Capacitance
V = 400 V
−
25
nC
pF
C
C
V
R
V
R
V
R
= 1 V, f = 100 kHz
= 300 V, f = 100 kHz
= 600 V, f = 100 kHz
−
424
39
−
−
−
−
35
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Part Number
Top Marking
Package
Shipping*
FFSD1065B−F085
FFSD1065B
DPAK
2500 / Tape & Reel
(Pb-Free / Halogen Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D
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2
FFSD1065B−F085
TYPICAL CHARACTERISTICS
(T = 25°C UNLESS OTHERWISE NOTED)
J
10−5
10−6
10−7
10−8
10−9
20
16
12
8
T
= 175 o
C
J
T
= 125 oC
TJ = 25 o
J = 75 o
TJ = 125 o
C
J
T
= 75 o
C
J
T
C
4
T
J
= 25 o
C
C
TJ = 175 o
C
= −55oC
T
J = −55oC
T
J
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
200
300
400
500
600 650
VR, REVERSE VOLTAGE (V)
V , FORWARD VOLTAGE (V)
F
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
100
80
60
40
20
0
120
100 D = 0.1
80
D = 0.2
60
40
D = 0.3
D = 0.5
20 D = 0.7
D = 1
0
25
25
50
75
100
125
150
175
50
75
100
125
150
175
C, CASE TEMPERATURE (oC)
o
T
C, CASE TEMPERATURE (C)
T
Figure 3. Current Derating
Figure 4. Power Derating
40
30
20
10
0
1000
100
10
0
100
200
300
400
500 600 650
0.1
1
10
100
650
VR, REVERSE VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 6. Capacitance vs. Reverse Voltage
Figure 5. Capacitive Charge vs. Reverse
Voltage
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3
FFSD1065B−F085
TYPICAL CHARACTERISTICS (CONTINUED)
(T = 25°C UNLESS OTHERWISE NOTED)
J
10
8
6
4
2
0
0
100
200
300
400
500
600 650
VR, REVERSE VOLTAGE (V)
Figure 7. Capacitance Stored Energy
2
1
DUTY CYCLE−DESCENDING ORDER
0.1
0.01
PDM
D=0.5
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
t1
t2
NOTES:
Z
q
JC
(t) = r(t) x R
q
JC
= 1.53 5C/W
1E−3
R
q
JC
Peak T = P
Duty Cycle, D = t /t
1
x Z (t) + T
q
JC C
J
DM
SINGLE PULSE
10−5
2
1E−4
10−6
10−4
t, RECTANGULAR PULSE DURATION (sec)
10−3
10−2
10−1
1
Figure 8. Junction-to-Case Transient Thermal Response Curve
TEST CIRCUIT AND WAVEFORMS
L = 0.5 mH
R < 0.1 W
V
DD
= 50 V
EAVL = 1/2LI2 [V
/ (V − V )]
R(AVL) DD
R(AVL)
Q1 = IGBT (BV
> DUT V
)
CES
R(AVL)
V
AVL
L
R
+
V
CURRENT
SENSE
DD
I
L
I
L
Q1
I V
DUT
V
DD
−
t
0
t
1
t
2
t
Figure 9. Unclamped Inductive Switching Test Circuit & Waveform
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK3 (TO−252 3 LD)
CASE 369AS
ISSUE A
DATE 28 SEP 2022
GENERIC
MARKING DIAGRAM*
XXXXXX
XXXXXX
AYWWZZ
XXXX = Specific Device Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ
= Assembly Lot Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON13810G
DPAK3 (TO−252 3 LD)
PAGE 1 OF 1
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