FFSM2065B [ONSEMI]
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D2, Power88;
| 型号： | FFSM2065B |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D2, Power88 |
| 文件： | 总6页 (文件大小：374K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
Schottky Diode – EliteSiC,
20 A, 650 V, D2, Power88
V
I
F
RRM
650 V
20 A
FFSM2065B
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
5 Cathode
3, 4 Anode
1, 2 Floating
Schottky Diode
Pin1
5
4
3
Features
2
1
Max Junction Temperature 175C
Avalanche Rated 94 mJ
PQFN4 8y8, 2P
(Power88)
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
CASE 483AP
MARKING DIAGRAM
No Reverse Recovery/No Forward Recovery
FFSM
2065B
AWLYWW
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
General Purpose
SMPS, Solar Inverter, UPS
Power Switching Circuit
FFSM2065B
A
WL
Y
WW
= Specific Device Code
= Assembly Site
= Wafer Lot Number
= Year
ABSOLUTE MAXIMUM RATINGS
(T = 25C, Unless otherwise specified)
= Work Week
C
Symbol
Parameter
Value
650
94
Unit
V
V
RRM
Peak Repetitive Reverse Voltage
Single Pulse Avalanche Energy (Note 1)
Continuous Rectified Forward Current
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
E
AS
mJ
A
I
F
20
@ T 143C
C
Continuous Rectified Forward Current
23.4
@ T 135C
C
I
Non−Repetitive
Peak Forward
Surge Current
630
524
77
A
A
T
T
= 25C, 10 ms
= 150C, 10 ms
F, Max
C
C
I
Non−Repetitive
Forward Surge
Current
Half−Sine Pulse,
t = 8.3 ms
F, SM
p
T
C
T
C
T
C
= 25C
= 25C
= 150C
P
tot
Power Dissipation
160
27
W
T , T
Operating and Storage Temperature
Range
−55 to +175
C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. E of 94 mJ is based on starting T = 25C, L = 0.5 mH, I = 19.4 A, V = 50 V.
AS
J
AS
Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
June, 2023 − Rev. 3
FFSM2065B/D
FFSM2065B
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
Unit
R
Thermal Resistance, Junction to Case, Max.
0.94
C/W
JC
PACKAGE MARKING AND ORDERING INFORMATION
†
Part Number
Top Marking
Package
Shipping
FFSM2065B
FFSM2065B
PQFN4 8X8, 2P (Power88)
(Halogen Free)
3000 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D
ELECTRICAL CHARACTERISTICS T = 25C unless otherwise noted
J
Symbol
Parameter
Test Conditions
I = 20 A, T = 25C
Min.
Typ.
1.38
1.6
1.67
0.5
1
Max.
Unit
V
F
Forward Voltage
Reverse Current
1.7
V
F
J
I = 20 A, T = 125C
F
J
I = 20 A, T = 150C
F
J
I
R
V
R
V
R
V
R
= 650 V, T = 25C
40
80
mA
J
= 650 V, T = 125C
J
= 650 V, T = 175C
2
160
J
Q
Total Capacitive Charge
Total Capacitance
V = 400 V
51
nC
pF
C
C
V
R
V
R
V
R
= 1 V, f = 100 kHz
= 200 V, f = 100 kHz
= 400 V, f = 100 kHz
866
80
70
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
FFSM2065B
TYPICAL CHARACTERISTICS
(T = 25C UNLESS OTHERWISE NOTED)
J
10−5
10−6
40
30
20
T = −55C
J
T
= 25C
J
T
= 75C
J
T
= 175C
J
T
= 125C
J
T
J
= 175C
10−7
T
= 125C
J
T
J
= 75C
10−8
10−9
10
0
T
= 25C
J
T = −55C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
100
200
300
400
500
600 650
V , FORWARD VOLTAGE (V)
F
V , REVERSE VOLTAGE (V)
R
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
180
200
150
D = 0.1
D = 0.2
150
120
90
100 D = 0.3
D = 0.5
60
50
D = 0.7
30
0
D = 1
0
25
25
50
75
100
125
150
175
50
75
100
125
150
175
T , CASE TEMPERATURE (5C)
C
T , CASE TEMPERATURE (5C)
C
Figure 3. Current Derating
Figure 4. Power Dissipation
90
5000
1000
60
30
0
100
50
0
100
200
300
400 500
600 650
0.1
1
10
100
650
V , REVERSE VOLTAGE (V)
R
V , REVERSE VOLTAGE (V)
R
Figure 5. Capacitance Charge vs. Reverse Voltage
Figure 6. Capacitance vs. Reverse Voltage
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3
FFSM2065B
TYPICAL CHARACTERISTICS (CONTINUED)
(T = 25C UNLESS OTHERWISE NOTED)
J
20
15
10
5
0
0
100
200
300 400
500 600 650
V , REVERSE VOLTAGE (V)
R
Figure 7. Capacitance Stored Energy
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.1
0.01
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
SINGLE PULSE
0.001
0.1
0.000001
0.00001
0.0001
0.001
0.01
t, RECTANGULAR PULSE DURATION (sec)
Figure 8. Junction−to−Case Transient Thermal Response Curve
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN4 8X8, 2P
CASE 483AP
ISSUE A
DATE 06 JUL 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13664G
PQFN4 8X8, 2P
PAGE 1 OF 1
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