FFSP0665B [ONSEMI]
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 6 A, 650 V, D2, TO-220-2L;
| 型号： | FFSP0665B |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) Schottky Diode – EliteSiC, 6 A, 650 V, D2, TO-220-2L |
| 文件： | 总6页 (文件大小：262K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
Schottky Diode – EliteSiC,
6ꢀA, 650 V, D2, TO-220-2L
ELECTRICAL CONNECTION
FFSP0665B
1. Cathode
2. Anode
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
1
2
Features
TO−220−2LD
CASE 340BB
• Max Junction Temperature 175°C
• Avalanche Rated 26 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
MARKING DIAGRAM
• No Reverse Recovery / No Forward Recovery
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
FFSP
0665B
AYWWZZ
Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuit
ABSOLUTE MAXIMUM RATINGS
(T = 25°C, Unless otherwise specified)
C
FFSP0665B
A
YWW
ZZ
= Specific Device Code
= Assembly Site
= Date Code (Year & Week)
= Lot Code
Symbol
Parameter
Value
650
26
Unit
V
V
RRM
Peak Repetitive Reverse Voltage
Single Pulse Avalanche Energy (Note 1)
Continuous Rectified Forward Current
E
AS
mJ
A
I
F
6.0
@ T < 150°C
C
Continuous Rectified Forward Current
8.0
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
@ T < 135°C
C
I
Non−Repetitive
Peak Forward
Surge Current
473
408
28
A
A
T
T
= 25°C, 10 ms
= 150°C, 10 ms
F, Max
C
C
I
Non−Repetitive
Forward
Surge Current
Half−Sine Pulse,
t = 8.3 ms
F, SM
p
P
tot
Power Dissipation
T
T
= 25°C
49
8.3
W
C
= 150°C
C
T , T
Operating and Storage Temperature
Range
−55 to +175
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. E of 26 mJ is based on starting T = 25°C, L = 0.5 mH, I = 10.2 A, V = 50 V.
AS
J
AS
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
January, 2023 − Rev. 3
FFSP0665B/D
FFSP0665B
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
Unit
R
Thermal Resistance, Junction to Case, Max.
2.46
°C/W
θ
JC
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
N/A
Quantity
FFSP0665B
TO−220−2LD
Tube
N/A
50 Units
FFSP0665B
ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
I = 6 A, T = 25°C
Min
Typ
Max
Unit
V
F
Forward Voltage
Reverse Current
1.38
1.6
1.7
2.0
2.4
40
V
F
C
I = 6 A, T = 125°C
F
C
I = 6 A, T = 175°C
1.72
0.025
0.08
0.22
15
F
C
I
R
mA
V
R
= 650 V, T = 25°C
C
V
R
V
R
= 650 V, T = 125°C
80
C
= 650 V, T = 175°C
160
C
Q
Total Capacitive Charge
Total Capacitance
V = 400 V
nC
pF
C
C
V
R
V
R
V
R
= 1 V, f = 100 kHz
= 200 V, f = 100 kHz
= 400 V, f = 100 kHz
259
29
23
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
FFSP0665B
TYPICAL CHARACTERISTICS
T = 25°C UNLESS OTHERWISE NOTED
J
−6
12
9
10
T = −55°C
J
T = 25°C
J
T = 175°C
T = 175°C
J
J
T = 75°C
J
−7
10
T = 125°C
J
6
T = 125°C
J
−8
10
10
T = 75°C
T = 25°C
3
0
J
J
T = −55°C
J
−9
0
0.5
1.0
1.5
2.0
2.5
3.0
0
100
200
300
400
500
600 650
V , FORWARD VOLTAGE (V)
F
V , REVERSE VOLTAGE (V)
R
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
80
60
40
70
56
42
28
D = 0.1
D = 0.2
D = 0.3
D = 0.5
20
0
14
0
D = 1.0
D = 0.7
75
25
50
100
125
150
175
25
50
75
100
125
150
175
T , CASE TEMPERATURE (°C)
C
T , CASE TEMPERATURE (°C)
C
Figure 3. Current Derating
Figure 4. Power Dissipation
25
20
15
10
1000
100
10
5
0
0
100
200
300
400
500
600 650
0.1
1
10
100
650
V , REVERSE VOLTAGE (V)
R
V , REVERSE VOLTAGE (V)
R
Figure 5. Capacitance Charge vs. Reverse
Voltage
Figure 6. Capacitance vs. Reverse Voltage
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3
FFSP0665B
TYPICAL CHARACTERISTICS
T = 25°C UNLESS OTHERWISE NOTED (CONTINUED)
J
6
4
2
0
0
100
200
300
400
500
600 650
V , REVERSE VOLTAGE (V)
R
Figure 7. Capacitance Stored Energy
2
1
50% Duty Cycle
20%
10%
5%
0.1
2%
0.01
1%
Single Pulse
0.001
−6
−5
−4
−3
−2
−1
10
10
10
10
10
10
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 8. Junction−to−Case Transient Thermal Response Curve
TEST CIRCUIT AND WAVEFORMS
L = 0.5 mH
Figure 9. Unclamped Inductive Switching Test Circuit & Waveform
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220−2LD
CASE 340BB
ISSUE O
DATE 31 AUG 2016
4.09
3.50
M
M
B A
0.36
10.67
9.65
B
A
8.89
6.86
3.43
2.54
1.40
0.51
6.86
5.84
7°
3°
13.40
12.19
16.51
14.22
16.15
15.75
9.40
8.38
5°
3°
5°
3°
6.35 MAX
1
2
0.60 MAX
C
14.73
13.60
1.65
1.25
1.91
0.61
0.33
2.54
5.08
2.92
2.03
1.02
0.38
M
0.36
C
A
B
NOTES:
5°
3°
5°
3°
A. PACKAGE REFERENCE: JEDEC TO220,ISSUE K,
VARIATION AC,DATED APRIL 2002.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSION AND TOLERANCE AS PER ASME
Y14.5−2009.
4.80
4.30
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13832G
TO−220−2LD
PAGE 1 OF 1
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