FFSP4065BDN-F085 [ONSEMI]
Silicon Carbide (SiC) Schottky Diode - EliteSiC, 40A, 650V, D2, TO-220-3L;
| 型号： | FFSP4065BDN-F085 |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) Schottky Diode - EliteSiC, 40A, 650V, D2, TO-220-3L 局域网 功效 测试 光电二极管 |
| 文件： | 总6页 (文件大小：303K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Silicon Carbide (SiC)
Schottky Diode – EliteSiC,
40 A, 650 V, D2, TO-220-3L
Product Preview
1
2
3
Anode
Cathode/
Case
Anode
FFSP4065BDN-F085
Schottky Diode
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size & cost.
TO−220−3LD
CASE 340AT
Features
• Max Junction Temperature 175°C
• Avalanche Rated 94 mJ
MARKING DIAGRAM
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery/No Forward Recovery
• AEC−Q101 Qualified
AXYYKK
FFSP
4065BDN
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Automotive HEV−EV Onboard Chargers
• Automotive HEV−EV DC−DC Converters
This document contains information on a product under development. onsemi reserves
the right to change or discontinue this product without notice.
A
= Assembly Plant Code
XYY
KK
FFSP4065BDN
= Date Code (Year & Week)
= Lot Traceability Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
FFSP4065BDN−F085/D
February, 2023 − Rev. P2
FFSP4065BDN−F085
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Value
650
Unit
V
V
RRM
Peak Repetitive Reverse Voltage
Single Pulse Avalanche Energy
E
AS
(Note 1)
94*
mJ
A
I
F
Continuous Rectified Forward Current @ T < 136°C
20*/40**
882
C
I
Non-Repetitive Peak Forward Surge Current
A
T
C
T
C
= 25°C, 10 ms
= 150°C, 10 ms
F, Max
798
A
I
Non-Repetitive Forward Surge Current
C
Half-Sine Pulse, t = 8.3 ms
84
A
F,SM
p
T
= 25°C
Ptot
Power Dissipation
T
T
= 25°C
95
16
W
W
C
= 150°C
C
T , T
Operating and Storage Temperature Range
TO247 Mounting Torque, M3 Screw
−55 to +175
60
°C
J
STG
Ncm
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
* Per Leg, ** Per Device
1. E of 94 mJ is based on starting T = 25°C, L = 0.5 mH, I = 19.4 A, V = 50 V.
AS
J
AS
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
R
Thermal Resistance, Junction to Case, Max
1.6*/0.8**
°C/W
q
JC
* Per Leg, ** Per Device
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted (per leg))
C
Symbol
Parameter
Forward Voltage
Test Condition
I = 20 A, T = 25°C
Min
−
Typ
1.38
1.6
1.72
0.5
1
Max
Unit
V
F
1.7
2.0
2.4
40
80
160
−
V
F
C
I = 20 A, T = 125°C
−
F
C
I = 20 A, T = 175°C
−
F
C
I
R
Reverse Current
V
R
V
R
V
R
= 650 V, T = 25°C
−
mA
C
= 650 V, T = 125°C
−
C
= 650 V, T = 175°C
−
2
C
Q
Total Capacitive Charge
Total Capacitance
V = 400 V
−
51
nC
pF
C
C
V
R
V
R
V
R
= 1 V, f = 100 kHz
= 300 V, f = 100 kHz
= 600 V, f = 100 kHz
−
866
80
−
−
−
−
70
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Shipping
FFSP4065BDN−F085
FFSP4065BDN
TO−220−3LD
(Pb−Free / Halogen Free)
50 Units / Tube
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2
FFSP4065BDN−F085
TYPICAL CHARACTERISTICS
(T = 25°C UNLESS OTHERWISE NOTED (PER LEG))
J
−5
10
40
30
T = −55oC
T = 25oC
J
J
−6
10
T = 75oC
T = 175oC
J
J
T = 125oC
J
T = 175oC
−7
J
20
10
0
10
T = 125oC
J
T = 75oC
−8
J
10
T = 25oC
J
T = −55oC
J
−9
10
0
0.5
1.0
1.5
2.0
2.5
3.0
100
200
300
400
500 600 650
V , FORWARD VOLTAGE (V)
F
V , REVERSE VOLTAGE (V)
R
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
200
150
100
50
120
90
60
30
0
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1
75
D = 0.7
0
25
50
75
100
125
150
175
25
50
100
125
150
175
T , CASE TEMPERATURE ( oC)
T , CASE TEMPERATURE (oC)
C
C
Figure 3. Current Derating
Figure 4. Power Derating
90
2000
1000
60
30
0
100
50
0
100 200 300 400 500 600 650
0.1
1
10
100
650
V , REVERSE VOLTAGE (V)
V , REVERSE VOLTAGE (V)
R
R
Figure 5. Capacitive Charge vs. Reverse Voltage
Figure 6. Capacitance vs. Reverse Voltage
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3
FFSP4065BDN−F085
TYPICAL CHARACTERISTICS
(T = 25°C UNLESS OTHERWISE NOTED)
J
20
15
10
5
0
0
100
200
300
400
500
600 650
V , REVERSE VOLTAGE (V)
R
Figure 7. Capacitance Stored Energy
2
1
DUTY CYCLE−DESCENDING ORDER
D=0.5
PDM
0.1
0.01
t1
D=0.2
D=0.1
D=0.05
D=0.02
t2
NOTES:
Z
(t) = r(t) x R
= 1.6 C/W
qJC
qJC
o
R
qJC
D=0.01
Peak T = P
x Z (t) + T
J
DM
qJC C
Duty Cycle, D = t / t
1
2
SINGLE PULSE
10−5
0.001
10−6
10−4
t, RECTANGULAR PULSE DURATION (sec)
10−3
10−2
10−1
1
Figure 8. Junction-to-Case Transient Thermal Response Curve
TEST CIRCUIT AND WAVEFORMS
L = 0.5 mH
R < 0.1 W
= 50 V
V
DD
EAVL = 1/2LI2 [V
/ (V − V )]
R(AVL) DD
R(AVL)
Q1 = IGBT (BV
> DUT V
)
CES
R(AVL)
V
AVL
L
R
+
V
CURRENT
SENSE
DD
I
L
I
L
Q1
I V
V
DD
DUT
−
t
0
t
1
t
2
t
Figure 9. Unclamped Inductive Switching Test Circuit & Waveform
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220−3LD
CASE 340AT
ISSUE A
DATE 03 OCT 2017
Scale 1:1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13818G
TO−220−3LD
PAGE 1 OF 1
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