FGA20S140P [ONSEMI]
IGBT,1400V,20A,短路阳极;型号: | FGA20S140P |
厂家: | ONSEMI |
描述: | IGBT,1400V,20A,短路阳极 局域网 栅 双极性晶体管 功率控制 |
文件: | 总10页 (文件大小:493K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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2014 年 2 月
FGA20S140P
1400 V、 20 A、短路阳极 IGBT
特性
概述
•
•
•
•
高速开关
飞兆半导体的短路阳极沟道 IGBT 系列采用先进的场截止沟道和
短路阳极技术,为软开关应用提供卓越的导通和开关性能。该器
件可并联配置,具有极佳的雪崩能力。该器件为感应加热和微波
炉而设计。
低饱和电压:VCE(sat) =1.9 V @ IC=20 A
高输入阻抗
符合 RoHS 标准
应用
•
感应加热、微波炉
C
G
TO-3PN
E
G
C
E
绝对最大额定值T =25°C 除非另有说明
C
符号
说明
额定值
1400
±25
单位
VCES
VGES
V
V
A
A
集电极 - 发射极之间电压
栅极-发射极间电压
集电极电流
@ TC=25°C
40
IC
@ TC=100°C
20
集电极电流
ICM (1)
集电极脉冲电流
60
40
A
A
IF
IF
二极管正向连续电流
@ TC=25°C
20
272
A
二极管正向连续电流
最大功耗
@ TC=100°C
@ TC=25°C
@ TC=100°C
W
W
°C
°C
PD
136
最大功耗
TJ
-55 至 +175
-55 至 +175
工作结温
Tstg
存储温度范围
用于焊接的最大引脚温度,距离外壳 1/8",持续 5 秒
300
°C
TL
热性能
符号
RθJC(IGBT)
RθJA
参数
结点 - 壳体的热阻
典型值
最大值
0.55
单位
°C/W
°C/W
--
--
40
结至环境热阻
注意:
1: 受限于 Tjmax
©2012 飞兆半导体公司
1
www.fairchildsemi.com
FGA20S140P 修订版 C4
封装标识与定购信息
器件标识
器件
封装
卷尺寸
带宽
数量
FGA20S140P
FGA20S140P
TO-3PN
-
-
30
IGBT 的电气特性T =25°C 除非另有说明
C
符号
参数
测试条件
最小值 典型值 最大值 单位
关断特性
ICES
VCE=1400, VGE=0 V
VGE=VGES, VCE=0 V
-
-
-
-
1
mA
nA
集电极切断电流
IGES
G-E 漏电流
±500
导通特性
VGE(th)
G-E 阈值电压
IC=20 mA, VCE=VGE
4.5
-
6.0
1.9
7.5
2.4
V
V
I
C =20 A, VGE=15 V
TC=25°C
VCE(sat)
集电极 - 发射极间饱和电压
IC =20 A, VGE=15 V,
-
-
2.1
2.2
-
V
V
TC=125°C
IC =20 A, VGE=15 V,
TC=175°C
-
IF =20 A, TC=25°C
IF =20 A, TC=175°C
-
-
1.7
2.1
2.4
-
V
V
VFM
二极管正向电压
动态特性
Cies
-
-
-
1686
45
-
-
-
pF
pF
pF
输入电容
VCE =30 V, VGE=0 V,
f=1 MHz
Coes
输出电容
Cres
32
反向传输电容
开关特性
td(on)
tr
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
20
245
400
130
0.76
0.56
1.32
21
ns
ns
导通延迟时间
上升时间
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
td(off)
tf
ns
关断延迟时间
下降时间
VCC=600 V, IC=20 A,
RG=10 Ω, VGE =15 V,
阻性负载, TC =25°C
ns
Eon
Eoff
Ets
mJ
mJ
mJ
ns
导通开关损耗
关断开关损耗
总开关损耗
td(on)
tr
td(off)
tf
导通延迟时间
上升时间
301
420
356
0.95
1.39
2.34
203.5
10.8
84.6
ns
ns
关断延迟时间
下降时间
VCC=600 V, IC=20 A,
RG=10 Ω, VGE =15 V,
阻性负载, TC =175°C
ns
Eon
Eoff
Ets
mJ
mJ
mJ
nC
nC
nC
导通开关损耗
关断开关损耗
总开关损耗
Qg
总栅极电荷
VCE=600 V, IC=20 A,
Qge
Qgc
栅极-发射极间电荷
栅极-发射极间电荷
V
GE=15 V
©2012 飞兆半导体公司
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FGA20S140P 修订版 C4
典型性能特征
图 1. 典型输出特性
图 2. 典型输出特性
160
160
TC = 25oC
TC = 175oC
20V
17V
15V
VGE = 20V
15V
140
140
120
100
80
VGE = 17V
120
100
80
60
40
20
0
12V
10V
12V
60
10V
9V
40
9V
8V
20
8V
0
0.0
1.5
3.0
4.5
6.0
7.5
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
图 3. 典型饱和电压特性
图 4. 传输特性
100
80
60
40
20
0
120
Common Emitter
VCE = 20V
TC = 25oC
TC = 175oC
Common Emitter
VGE = 15V
TC = 25oC
100
TC = 175oC
80
60
40
20
0
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14
0.0
1.0
2.0
3.0
4.0
5.0
Gate-Emitter Voltage,VGE [V]
Collector-Emitter Voltage, VCE [V]
图 5. 饱和电压与外壳的关系
图 6. 饱和电压与 Vge 的关系
3.5
20
Common Emitter
Common Emitter
TC = 25oC
VGE = 15V
3.0
40A
15
10
2.5
2.0
1.5
1.0
20A
IC = 10A
IC = 10A
20A
40A
5
0
25
50
75
100
125
150
175
4
8
12
16
20
Case Temperature, TC [oC]
Gate-Emitter Voltage, VGE [V]
©2012 飞兆半导体公司
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FGA20S140P 修订版 C4
典型性能特征
图 7. 饱和电压与 Vge的关系
图 8. 电容特性
10000
20
Common Emitter
TC = 175oC
Cies
16
12
1000
100
10
Coes
Cres
8
20A
IC = 10A
40A
Common Emitter
4
0
VGE = 0V, f = 1MHz
TC = 25oC
1
5
10
15
20
25
30
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Collector-Emitter Voltage, VCE [V]
图 9. 栅极电荷特性
图 10. SOA 特性
100
15
Common Emitter
TC = 25oC
10μs
400V
600V
12
10
1
100μs
VCC = 200V
9
6
3
0
1ms
10ms
DC
*Notes:
0.1
1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
0.01
1
10
100
1000
2000
0
30
60
90
120 150 180 210
Gate Charge, Qg [nC]
Collector-Emitter Voltage, VCE [V]
图 11. 导通特性与栅极电阻的关系
图 12. 关断特性与栅极电阻的关系
10000
200
Common Emitter
VCC = 600V, VGE = 15V
tr
IC = 20A
TC = 25oC
TC = 175oC
100
td(off)
1000
Common Emitter
VCC = 600V, VGE = 15V
td(on)
IC = 20A
TC = 25oC
tf
10
5
TC = 175oC
100
0
10
20
30
40
50
60
70
10
20
30
40
50
60
70
Gate Resistance, RG [Ω]
Gate Resistance, RG [Ω]
©2012 飞兆半导体公司
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FGA20S140P 修订版 C4
典型性能特征
图 13. 导通特性与集电极电流的关系
图 14. 关断特性与集电极电流的关系
Common Emitter
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
VGE = 15V, RG = 10Ω
TC = 25oC
1000
1000
TC = 175oC
TC = 175oC
tr
td(off)
100
td(on)
tf
10
100
10
20
30
40
10
20
30
40
Collector Current, IC [A]
Collector Current, IC [A]
图 15. 开关损耗与栅极电阻的关系
图 16. 开关损耗与栅极电阻的关系
30
10
Common Emitter
VGE = 15V, RG = 10Ω
Common Emitter
VCC = 600V, VGE = 15V
TC = 25oC
10k
IC = 20A
TC = 175oC
TC = 25oC
TC = 175oC
Eoff
Eon
1
1k
Eoff
Eon
100
00..11
10
10
20
30
40
20
30
40
50
[Ω]
60
70
Collector Current, IC [A]
Gate Resistance, RG
图 17. 关断开关 SOA 特性
图 18. 正向特性
100
80
TJ = 25oC
10
10
TJ = 175oC
TC = 25oC
Safe Operating Area
VGE = 15V, TC = 175oC
1
TC = 175oC
1
0.5
0
1
10
100
1000
2000
1
2
Collector-Emitter Voltage, VCE [V]
Forward Voltage, VF [V]
©2012 飞兆半导体公司
5
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FGA20S140P 修订版 C4
图 19. IGBT 的瞬态热阻抗
1
0.1
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
0.01
1E-3
Duty Factor, D = t1/t2
Peak T = Pdm x Zthjc + T
j
C
1E-5
1E-4
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
©2012 飞兆半导体公司
6
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FGA20S140P 修订版 C4
机械尺寸
图 20. TO-3P 3L - 3LD, T03, PLASTIC, EIAJ SC-65
封装图纸作为一项服务,提供给考虑飞兆半导体元件的客户。具体参数可能会有变化,且不会做出相应通知。请注意图纸上的版本和 /
或日期,并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件,尤其是其中涉及飞兆公司
产品保修的部分。
随时访问飞兆半导体在线封装网页,可以获取最新的封装图纸:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3P0-003
尺寸单位为毫米
©2012 飞兆半导体公司
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FGA20S140P 修订版 C4
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修订版 I66
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