首页 |元器件品牌

FGA6530WDF [ONSEMI]

650 V、30 A 场截止沟道 IGBT;
FGA6530WDF
型号： FGA6530WDF
厂家： ONSEMI    ONSEMI
描述：

650 V、30 A 场截止沟道 IGBT

双极性晶体管
文件： 总10页 (文件大小：496K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
Is Now Part of  
To learn more about ON Semiconductor, please visit our website at  
www.onsemi.com  
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers  
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor  
product management systems do not have the ability to manage part nomenclature that utilizes an underscore  
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain  
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated  
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please  
email any questions regarding the system integration to Fairchild_questions@onsemi.com.  
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number  
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right  
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON  
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON  
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s  
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA  
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended  
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out  
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor  
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
August 2015  
FGA6530WDF  
650 V, 30 A Field Stop Trench IGBT  
Features  
General Description  
•
•
•
•
•
•
•
•
•
Maximum Junction Temperature : TJ = 175oC  
Positive Temperaure Co-efficient for Easy Parallel Operating  
High Current Capability  
Using novel field stop IGBT technology, Fairchild’s new series of  
field stop 3rd generation IGBTs offer the optimum performance  
for welder and industial applications where low conduction and  
switching losses are essential.  
Low Saturation Voltage: VCE(sat) = 1.8 V(Typ.) @ IC = 30 A  
100% of the Parts Tested for ILM(1)  
High Input Impedance  
Applications  
•
Welder and Industrial Application  
Fast Switching  
•
Power Factor Correction  
Tighten Parameter Distribution  
RoHS Compliant  
C
G
G
C
TO-3PN  
E
E
Absolute Maximum Ratings  
T
= 25°C unless otherwise noted  
C
Symbol  
Description  
FGA6530WDF  
Unit  
V
VCES  
Collector to Emitter Voltage  
650  
Gate to Emitter Voltage  
20  
V
VGES  
Transient Gate to Emitter Voltage  
Collector Current  
30  
V
@ TC = 25oC  
@ TC = 100oC  
@ TC = 25oC  
60  
A
IC  
Collector Current  
30  
A
ILM (1)  
ICM (2)  
Pulsed Collector Current  
Pulsed Collector Current  
Diode Forward Current  
90  
A
90  
A
@ TC = 25oC  
@ TC = 100oC  
30  
15  
A
IF  
Diode Forward Current  
A
IFM  
PD  
Pulsed Diode Maximum Forward Current  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction Temperature  
Storage Temperature Range  
60  
A
@ TC = 25oC  
@ TC = 100oC  
176  
W
W
oC  
oC  
88  
TJ  
-55 to +175  
-55 to +175  
Tstg  
Maximum Lead Temp. for soldering  
Purposes, 1/8” from case for 5 seconds  
oC  
TL  
300  
Notes:  
1. V = 400 V, V = 15 V, I = 90 A, R = 55.9  Inductive Load  
CC  
GE  
C
G
2. Repetitive rating: Pulse width limited by max. junction temperature  
©2015 Fairchild Semiconductor Corporation  
FGA6530WDF Rev. 1.1  
1
www.fairchildsemi.com  
Thermal Characteristics  
Symbol  
Parameter  
FGA6530WDF  
Unit  
oC/W  
oC/W  
oC/W  
RJC(IGBT)  
RJC(Diode)  
RJA  
Thermal Resistance, Junction to Case, Max.  
Thermal Resistance, Junction to Case, Max.  
Thermal Resistance, Junction to Ambient, Max.  
0.85  
3.5  
40  
Package Marking and Ordering Information  
Part Number  
Top Mark  
Package Packing Method Reel Size Tape Width Quantity  
FGA6530WDF  
FGA6530WDF  
TO-3PN  
Tube  
-
-
30  
Electrical Characteristics of the IGBT  
T
= 25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
Off Characteristics  
BVCES  
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA  
Temperature Coefficient of Breakdown  
650  
-
-
-
-
V
BVCES  
TJ  
V/oC  
I
C = 1 mA, Reference to 25oC  
0.52  
Voltage  
ICES  
IGES  
Collector Cut-Off Current  
G-E Leakage Current  
VCE = VCES, VGE = 0 V  
VGE = VGES, VCE = 0 V  
-
-
-
-
250  
A  
±400  
nA  
On Characteristics  
VGE(th)  
G-E Threshold Voltage  
IC = 30 mA, VCE = VGE  
IC = 30 A, VGE = 15 V  
IC = 30 A, VGE = 15 V,  
4.1  
-
5.6  
1.8  
7.6  
2.3  
V
V
VCE(sat)  
Collector to Emitter Saturation Voltage  
-
2.4  
-
V
T
C = 175oC  
Dynamic Characteristics  
Cies  
Coes  
Cres  
Input Capacitance  
-
-
-
1072  
36  
-
-
-
pF  
pF  
pF  
V
CE = 30 V VGE = 0 V,  
,
Output Capacitance  
f = 1MHz  
Reverse Transfer Capacitance  
13  
Switching Characteristics  
td(on) Turn-On Delay Time  
tr  
td(off)  
tf  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
12  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns  
ns  
ns  
ns  
uJ  
uJ  
uJ  
ns  
ns  
ns  
ns  
uJ  
uJ  
uJ  
Rise Time  
19.2  
42.4  
7.2  
Turn-Off Delay Time  
Fall Time  
VCC = 400 V, IC = 30 A,  
R
G = 6 , VGE = 15 V,  
Inductive Load, TC = 25oC  
Eon  
Eoff  
Ets  
td(on)  
tr  
Turn-On Switching Loss  
Turn-Off Switching Loss  
Total Switching Loss  
Turn-On Delay Time  
Rise Time  
960  
162  
1122  
12.8  
27.2  
46.4  
12.8  
1430  
310  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
VCC = 400 V, IC = 30 A,  
R
G = 6 , VGE = 15 V,  
Inductive Load, TC = 175oC  
Eon  
Eoff  
Ets  
Turn-On Switching Loss  
Turn-Off Switching Loss  
Total Switching Loss  
1740  
©2015 Fairchild Semiconductor Corporation  
FGA6530WDF Rev. 1.1  
2
www.fairchildsemi.com  
Electrical Characteristics of the IGBT (Continued)  
Symbol  
Qg  
Parameter  
Test Conditions  
Min.  
Typ.  
37.4  
7.2  
Max Unit  
Total Gate Charge  
-
-
-
-
-
-
nC  
nC  
nC  
V
V
CE = 400 V, IC = 30 A,  
GE = 15 V  
Qge  
Gate to Emitter Charge  
Gate to Collector Charge  
Qgc  
15  
Electrical Characteristics of the Diode  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
1.7  
Max Unit  
T
T
T
T
C = 25oC  
C = 175oC  
C = 175oC  
C = 25oC  
C = 175oC  
C = 25oC  
-
-
-
-
-
-
-
2.6  
VFM  
Diode Forward Voltage  
IF = 15 A  
V
1.62  
76  
-
Erec  
trr  
Reverse Recovery Energy  
-
-
-
-
-
uJ  
ns  
81  
Diode Reverse Recovery Time  
IF = 15 A, dIF/dt = 200 A/s  
T
T
257  
254  
1189  
Qrr  
Diode Reverse Recovery Charge  
nC  
TC = 175oC  
©2015 Fairchild Semiconductor Corporation  
FGA6530WDF Rev. 1.1  
3
www.fairchildsemi.com  
Typical Performance Characteristics  
Figure 1. Typical Output Characteristics  
Figure 2. Typical Output Characteristics  
90  
90  
TC = 25oC  
20V  
TC = 175oC  
20V  
15V  
15V  
10V  
75  
60  
45  
30  
15  
0
75  
12V  
10V  
12V  
60  
45  
VGE = 8V  
VGE = 8V  
30  
15  
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Collector-Emitter Voltage, VCE [V]  
Collector-Emitter Voltage, VCE [V]  
Figure 3. Typical Saturation Voltage  
Characteristics  
Figure 4. Saturation Voltage vs. Case  
Temperature at Variant Current Level  
4
3
2
1
90  
Common Emitter  
VGE = 15V  
Common Emitter  
VGE = 15V  
TC = 25oC  
TC = 175oC  
75  
60  
60A  
30A  
45  
30  
15  
0
IC = 15A  
-100  
-50  
0
50  
100  
150  
200  
0
1
2
3
4
5
Collector-Emitter Case Temperature, TC [oC]  
Collector-Emitter Voltage, VCE [V]  
Figure 5. Saturation Voltage vs. V  
Figure 6. Saturation Voltage vs. V  
GE  
GE  
20  
20  
Common Emitter  
TC = 25oC  
Common Emitter  
TC = 175oC  
16  
12  
8
16  
12  
8
30A  
60A  
30A  
60A  
IC = 15A  
IC = 15A  
4
4
0
0
4
8
12  
16  
20  
4
8
12  
16  
20  
Gate-Emitter Voltage, VGE [V]  
Gate-Emitter Voltage, VGE [V]  
©2015 Fairchild Semiconductor Corporation  
FGA6530WDF Rev. 1.1  
4
www.fairchildsemi.com  
Typical Performance Characteristics  
Figure 7. Capacitance Characteristics  
Figure 8. Gate charge Characteristics  
15  
10000  
Common Emitter  
TC = 25oC  
12  
300V  
Cies  
1000  
VCC = 200V  
400V  
9
6
3
0
100  
10  
Coes  
Common Emitter  
VGE = 0V, f = 1MHz  
TC = 25oC  
Cres  
0
8
16  
24  
32  
40  
1
10  
Collector-Emitter Voltage, VCE [V]  
30  
Gate Charge, Qg [nC]  
Figure 9. Turn-on Characteristics vs.  
Gate Resistance  
Figure 10. Turn-off Characteristics vs.  
Gate Resistance  
1000  
100  
tr  
td(off)  
100  
tf  
Common Emitter  
10  
Common Emitter  
td(on)  
VCC = 400V, VGE = 15V  
IC = 30A  
VCC = 400V, VGE = 15V  
IC = 30A  
10  
5
TC = 25oC  
TC = 175oC  
TC = 25oC  
TC = 175oC  
1
0
10  
20  
30  
40  
50  
60  
70  
80  
0
10  
20  
30  
40  
50  
60  
70  
80  
Gate Resistance, RG []  
Gate Resistance, RG []  
Figure 11. Switching Loss vs.  
Gate Resistance  
Figure 12. Turn-on Characteristics vs.  
Collector Current  
300  
5000  
100  
tr  
Eon  
1000  
10  
td(on)  
Common Emitter  
VCC = 400V, VGE = 15V  
Eoff  
Common Emitter  
VGE = 15V, RG = 6  
TC = 25oC  
TC = 175oC  
IC = 30A  
TC = 25oC  
TC = 175oC  
100  
50  
1
0
15  
30  
45  
60  
75  
90  
0
10  
20  
30  
40  
50  
60  
70  
80  
Collector Current, IC [A]  
Gate Resistance, RG []  
©2015 Fairchild Semiconductor Corporation  
FGA6530WDF Rev. 1.1  
5
www.fairchildsemi.com  
Typical Performance Characteristics  
Figure 13. Turn-off Characteristics vs.  
Collector Current  
Figure 14. Switching Loss vs.  
Collector Current  
10000  
300  
Eon  
100  
td(off)  
1000  
100  
10  
Eoff  
tf  
10  
Common Emitter  
VGE = 15V, RG = 6  
TC = 25oC  
TC = 175oC  
Common Emitter  
VGE = 15V, RG = 6  
TC = 25oC  
TC = 175oC  
1
0
15  
30  
45  
60  
75  
90  
0
15  
30  
45  
60  
75  
90  
Collector Current, IC [A]  
Collector Current, IC [A]  
Figure 15. Load Current Vs. Frequency  
Figure 16. SOA Characteristic s  
100  
150  
Square Wave  
TJ <= 175oC, D = 0.5, VCE = 400V  
10s  
VGE = 15/0V, RG = 6  
100s  
10  
100  
1ms  
TC = 25oC  
10 ms  
DC  
TC = 75oC  
1
50  
TC = 100oC  
*Notes:  
1. TC = 25oC  
2. TJ = 175oC  
3. Single Pulse  
0.1  
0
1k  
1
10  
100  
1000  
10k  
100k  
1M  
Collector-Emitter Voltage, VCE [V]  
Switching Frequency, f[Hz]  
Figure 17. Forward Characteristics  
Figure 18. Reverse Recovery Current  
12  
90  
di/dt = 200A/s  
9
di/dt = 200A/s  
TC = 175oC  
10  
6
di/dt = 100A/s  
TC = 75oC  
TC = 25oC  
di/dt = 100A/s  
3
0
TC = 25oC  
TC = 25oC  
TC = 75oC  
TC = 175oC  
4
TC = 175oC ---  
1
0
10  
20  
30  
40  
50  
60  
70  
80  
0
1
2
3
5
Forward Voltage, VF [V]  
Forward Current, IF [A]  
©2015 Fairchild Semiconductor Corporation  
FGA6530WDF Rev. 1.1  
6
www.fairchildsemi.com  
Typical Performance Characteristics  
Figure 19. Reverse Recovery Time  
Figure 20. Stored Charge  
500  
2500  
TC = 25oC  
TC = 25oC  
TC = 175oC - - -  
400  
TC = 175oC - - -  
2000  
300  
1500  
di/dt = 100A/s  
di/dt = 200A/s  
di/dt = 200A/s  
200  
1000  
di/dt = 100A/s  
100  
0
500  
0
0
10  
20  
30  
40  
50  
60  
70  
80  
0
10  
20  
30  
40  
50  
60  
70  
80  
Forward Current, IF [A]  
Forward Current, IF [A]  
Figure 21.Transient Thermal Impedance of IGBT  
1
0.5  
0.2  
0.1  
0.1  
0.05  
PDM  
0.02  
0.01  
t1  
t2  
Duty Factor, D = t1/t2  
single pulse  
Peak Tj = Pdm x Zthjc + TC  
0.01  
10-5  
10-4  
10-3  
10-2  
10-1 100  
Rectangular Pulse Duration [sec]  
Figure 22.Transient Thermal Impedance of Diode  
4
1
0.5  
0.2  
0.1  
0.05  
0.02  
0.1  
PDM  
0.01  
t1  
t2  
single pulse  
Duty Factor, D = t1/t2  
Peak Tj = Pdm x Zthjc + TC  
0.01  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
Rectangular Pulse Duration [sec]  
©2015 Fairchild Semiconductor Corporation  
FGA6530WDF Rev. 1.1  
7
www.fairchildsemi.com  
5.00  
4.60  
13.80  
13.40  
1.65  
1.45  
3.30  
3.10  
16.20  
15.40  
5.20  
4.80  
R0.50  
3°  
16.96  
16.56  
20.10  
19.70  
18.90  
18.50  
7.20  
6.80  
3°  
4°  
1
3
2.00  
1.60  
3.70  
3.30  
1.85  
2.60  
2.20  
20.30  
19.70  
2.20  
1.80  
3.20  
2.80  
1.20  
0.80  
M
0.55  
0.75  
0.55  
5.45  
5.45  
NOTES: UNLESS OTHERW ISE SPECIFIED  
A) THIS PACKAGE CONFORMS TO EIAJ  
SC-65 PACKAGING STANDARD.  
B) ALL DIMENSIONS ARE IN MILLIMETERS.  
C) DIMENSION AND TOLERANCING PER  
ASME14.5-2009.  
D) DIMENSIONS ARE EXCLUSSIVE OF BURRS,  
MOLD FLASH, AND TIE BAR EXTRUSSIONS.  
E) DRAW ING FILE NAME: TO3PN03AREV2.  
F) FAIRCHILD SEMICONDUCTOR.  
R0.50  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  
literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81−3−5817−1050  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
© Semiconductor Components Industries, LLC  
www.onsemi.com  

相关型号：

FGA6540WDF

 IGBT，650 V，40A，场截止沟槽
ONSEMI

FGA6560WDF

 IGBT，650V，60A，场截止沟槽
ONSEMI

FGA70N30T

 300V, 70A PDP IGBT
FAIRCHILD

FGA70N30TD

 300V, 70A PDP IGBT
FAIRCHILD

FGA70N30TDTU

 Insulated Gate Bipolar Transistor, 40A I(C), 300V V(BR)CES, N-Channel, ROHS COMPLIANT, TO-3PN, 3 PIN
FAIRCHILD

FGA70N30TTU

 300V, N-CHANNEL IGBT, ROHS COMPLIANT, TO-3PN, 3 PIN
ROCHESTER

FGA70N30TTU

 Insulated Gate Bipolar Transistor, 300V V(BR)CES, N-Channel, ROHS COMPLIANT, TO-3PN, 3 PIN
FAIRCHILD

FGA70N33BTD

 330V, 70A PDP IGBT
FAIRCHILD

FGA70N33BTDTU

 330V, 70A PDP IGBT
FAIRCHILD

FGA90N30

 300V PDP IGBT
FAIRCHILD

FGA90N30D

 300V PDP IGBT
FAIRCHILD

FGA90N30DTU

 90A, 300V, N-CHANNEL IGBT, LEAD FREE, TO-3P, 3 PIN
ROCHESTER
©2020 ICPDF网 联系我们和版权申明