FGBS3040E1-F085 [ONSEMI]

集成式智能点火线圈驱动器;
FGBS3040E1-F085
型号: FGBS3040E1-F085
厂家: ONSEMI    ONSEMI
描述:

集成式智能点火线圈驱动器

驱动 驱动器
文件: 总9页 (文件大小:586K)
中文:  中文翻译
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FGBS3040E1-F085  
Integrated Smart Ignition CoilDriver  
Description  
Features  
The FGBS3040E1-F085 is designed to directly drive an  
ignition coil and control the current and spark event of  
the coil. The coil current is controlled via the  
input/diagnostic pin. When the input is driven high, the  
IGBT is enabled to start charging the coil. The  
FGBS3040E1-F085 w ill sink a current (IIN1) into the  
input to denote this condition. When the collector current  
increases to Icthr the input current into the  
FGBS3040E1-F085 is reduced to IIN2 indicating the  
collector current has reached this level. An input filter  
suppresses input signals of less then 13 µsec in  
.
.
.
.
.
.
.
400V 300mJ N Channel Ignition IGBT  
Control Input buffering  
Input spike filter of typical 13us  
Operation from Ignition or Battery line  
Ground shift tolerance +/- 1.5V  
Programmable maximum dw ell time  
Current programmable bidirectional  
Input/Diagnostic pin  
duration.  
A
Max Dw ell timer is included in the  
FGBS3040E1-F085 w hich w ill turn off the IGBT if the  
input stays active for longer then the programmed time.  
This time interval can be modified through an external  
capacitor. When the Max Dw ell timer is exceeded, the  
FGBS3040E1-F085 w ill enter a Soft-Shut-Dow n mode  
(SSD) slow ly dropping the collector current thereby  
discharging the coil such as to inhibit a spark event.  
Once the soft shutdow n operation has started, any  
transitions on the input signal are ignored until after  
completion of the soft shutdow n function. The  
FGBS3040E1-F085 w ill also limit the collector current of  
the IGBT to Ic(lim) during charging.  
.
.
Collector Current limit typical 16.5A  
Soft Shutdow n of Collector Current after Max Dw ell  
Applications  
.
.
Coil on Plug Ignition systems  
General ignition systems  
© 2016 Semiconductor Components Industries, LLC.  
September-2017, Rev. 2  
Publication Order Number:  
FGBS3040E1-F085/D  
Block Diagram  
Figure 1.  
Figure 2.  
Block Diagram of FGBS3040E1-F085  
Typical Ignition Coil Driver Application  
Typical Application  
www.onsemi.com  
2
Pin Configuration  
The FGBS3040E1-F085 is assembled in a 7 lead TO263 package  
TO263-7L  
Pin Assignment (Top Through View)  
Pin1  
Pin2  
Pin3  
Pin4/Tab  
GND  
Vbat  
IN/IFL  
COL  
NC  
Emitter and control IC ground  
Supply voltage  
Input and diagnostic (bidirectional)  
IGBT collector output  
NC  
Pin5  
Pin6  
CSSD Maximum dw ell time and Soft-Shut-Dow n current output (to external capacitor)  
Pin7  
RA Input reference current output (to external resistor)  
Absolute Maximum Ratings1  
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be  
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.  
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.  
The absolute maximum ratings are stress ratings only.  
Parameter  
Symbol  
Values  
Unit  
Voltage at Vbat pin (excl. EMC transients)  
Vbat  
-0.3… 28  
V
V
V
V
Voltage at IN/IFL pin  
VIN1  
- 1... 16  
- 0.3... 6  
450  
Voltage at A & CSSD pins  
VIN2  
Collector Emitter Voltage (VIN = 0V) Ic=10mA  
VC-GND(CL)  
Operating Temperature Range  
Storage Temperature Range  
TJ  
-40... +175  
-40... +175  
°C  
°C  
TSTG  
Output Current  
IC(lim)  
IC(lim) max  
300  
A
mJ  
Self Clamped Inductive Sw itched Energy @Tj = 25°C  
Self Clamped Inductive Sw itched Energy @Tj = 150°C  
Maximum pow er dissipation (continuous) from TC = 25°C  
Thermal Resistance junction–case (typical)  
Electrostatic Discharge Voltage (Human Body Model)  
EAS  
EAS  
170  
mJ  
Pmax  
150  
W
RΘJC  
1
°C /W  
VESD (pin to pin)  
2
4
kV  
kV  
V
ESD (CE)  
according to MIL STD 883D, method 3015.7 and EOS/ESD  
assn. standard S5.1 - 1993  
www.onsemi.com  
3
Recommended Operating Conditions  
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended  
operating conditions are specified to ensure optimal performance. ON Semiconductor does not recommend  
exceeding them or designing to Absolute Maximum Ratings.  
Symbol  
VINL  
Parameter  
Conditions  
Min.  
-0.3  
Typ.  
Max.  
2.05  
Unit  
Vbat = 5 to 28 V;  
TJ= - 40 °C to +  
175 °C (unless  
V
Input low voltage  
otherw ise specified)  
Vbat = 5 to 28 V;  
TJ= - 40 °C to +  
175 °C (unless  
VINH  
VINHys  
IIN1  
2.85  
0.25  
16  
V
V
Input high voltage  
otherw ise specified)  
Vbat = 5 to 28 V;  
TJ= - 40 °C to +  
Input voltage hysteresis  
175 °C (unless  
otherw ise specified)  
See fig 8 for typical  
values vs Ra  
(Measured w ith  
11.5k_, ±1%  
resistor on A pin)  
See fig 8 for typical  
values vs Ra  
18  
20  
10  
mA  
Input current (IC <  
IcTHR)  
IIN2  
6
7.1  
mA  
Input current (IC >  
IcTHR)  
(Measured w ith  
11.5k_, ±1%  
resistor on A pin)  
(Note 1)  
)
Input current (IC < IcTHR  
IIN1  
4.2  
1.8  
70  
mA  
mA  
pF  
(Note 1)  
)
Input current (IC > IcTHR  
IIN2  
VC-GND =25 V, VIN  
0 V, f = 1 MHz  
=
Coss  
Output capacitance  
(Measured w ith  
11.5k_, ±1%  
resistor on A pin)  
IcTHR  
Collector current  
feedback (IFL)  
threshold 25 C to  
175C  
4.3  
5.3  
6.8  
A
(Measured w ith  
11.5k_, ±1%  
resistor on A pin)  
IcTHR  
Collector current  
feedback (IFL)  
threshold -40C  
4.3  
5.2  
7.3  
A
Note 3  
Resistor for input  
reference current  
RA  
200  
kΩ  
Minimum dwell time  
capacitor  
CSSDMIN  
2.2  
nF  
(CSSDEXT=10nF)  
(Ic: 90% -20%IL)  
Maximum dwell time  
TDMAX  
ISLEW  
19  
23  
28  
ms  
Soft-Shut-Down slew  
rate  
0.7  
1.5  
2.5  
A/ms  
CSSD Pin current for  
TDMAX  
ICSSD1  
1.0  
1.25  
1.5  
µA  
www.onsemi.com  
4
Electrical Characteristics  
Symbol  
Vbat1  
Parameter  
Operating voltage  
Operating voltage  
Supply current  
Conditions  
Min. Typ. Max. Unit  
Coil sw itching  
4
5
28  
28  
5
V
V
Vbat2  
All functions  
Ibat  
(TJ=175°C, Vbat = 28V, RA open,  
IN/IFL = 5V)  
mA  
VC-  
GND(CL)  
Collector emitter clamping  
voltage  
(IC = 10 mA)  
390  
450  
30  
V
IC(leak)  
VC-  
(TJ=175°C,VC-GND=300 V)  
µA  
Collector leakage current  
Collector emitter saturation  
voltage (Ic=10A, Tj=175°C)  
Collector emitter saturation voltage  
(Ic=10A, Tj=175°C)  
1.8  
V
GND(SA  
T)  
Current Limit  
(Note 2)  
14  
19  
15  
A
IC(lim)  
Tfall  
Current fall time  
Current fall time  
µs  
Tspike  
Input spike filter delay on rising  
and falling edge of IN/IFL  
Input spike filter delay on rising and  
falling edge of IN/IFL  
13  
13  
µs  
TD1  
Turn on delay time (Time from  
VIN/IFL=4.0 V to Vc-  
gnd=Vbat/2)  
Turn on delay time (Time from  
VIN/IFL=4.0 V to Vc-gnd=Vbat/2)  
10  
10  
26  
28  
µs  
TD2  
Turn off delay time (Time from  
VIN/IFL=0.5 V to Vc-  
gnd=Vbat/2)  
Turn off delay time (Time from  
VIN/IFL=0.5 V to Vc-gnd=Vbat/2)  
17  
µs  
Notes :  
1. Measured w ith open or shorted RA pin  
2. Range can be varied betw een typ. 8-16.5A or can be eliminated w ith metal mask options  
3. Icth max < 7.3A- 0.0077*(T+40C) for Tj from -40 to 25C  
www.onsemi.com  
5
Functional Description  
Input and spike filter  
When the input signal voltage reaches VINH, the coil  
current w ill be sw itched on through the IGBT. When the  
input voltage goes below VINL, the coil current through  
the IGBT w ill be turned off. If the ignitor is in SSD mode,  
If the CSSD capacitor has a value of < 2.2nF or the  
CSSD pin is shorted to ground, the maximum dw ell time  
and SSD functions w ill be disabled.  
the input signal control is disabled.  
After a SSD  
sequence input control w ill be re-enabled after the input  
has reached a valid low . Positive and negative spikes of  
< Tspike duration at the input line w ill be filtered out and  
w ill not turn on/off the IGBT.  
Bidirectional input / diagnosis pin  
The pin IN/IFL has a double function. It is used as input  
pin to control the pow er stage (on/off) and as output pin  
that delivers diagnostic information about the collector  
current level (current flag).  
Figure 5: Dwell time and Soft-Shut-Dow n  
a) If the input voltage reaches VINH, the pow er stage is  
turned on. If the input voltage is below VINL, the pow er  
stage is turned off.  
35  
30  
25  
20  
15  
10  
b) The IN/IFL pin sinks constantly a current of IIN1.  
When the input voltage is above VINH and the collector  
current exceeds the IcTHR threshold, the current flag is  
set by sw itching a current sink at the bidirectional IN/IFL  
pin to IIN2 (see Fig.4)  
c) If resistor RA has a value <5.2k or >200k, IIN1 and  
IIN2 w ill be set to their default values.  
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
Cext [nF]  
Figure 6: TDMAX as function of external CSSD  
capacitor  
Figure 7 show s the IN1 and IN2 currents in dependency  
of the IRA current.  
Figure 4: Bidirectional IN/INFL Diagnostic Pin  
Maximum dwell time and soft-  
shutdown (SSD)  
When the IGBT is turned on, a delay timer, dependent  
on the value of the external CSSD capacitor (see Fig.6),  
is started. If a valid falling edge has not been received  
after the time TDMAX, the IGBT w ill be turned off slow ly  
as show n in Fig.5. The coil current w ill not exceed a  
slew rate of typical 1.2A/ms. If a valid falling edge is  
received after the time TDMAX, the edge w ill be ignored  
and the soft shutdow n w ill be completed. The IGBT  
cannot be subsequently turned on until a valid rising  
edge is detected.  
Figure 7: Typical IN1 and IN2 Currents vs Ra  
The value for RA can be determined by the formula:  
RA = (1.24/IRA)-750.  
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6
Physical Dimensions  
Figure 3.  
Packaging Outline and Dimensions (TO263A07 Rev4)  
Package drawings are providedas a service to customers consideringON Semiconductor components.Drawings may change in  
any manner without notice. Please notethe revision and/or dateon the drawing andcontact a ON Semiconductor representative to  
verify or obtain the most recent revision.Package specifications do notexpand the terms of ON Semiconductor’s worldwideterms  
and conditions, specifically the warranty therein,which covers ON Semiconductor products.  
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7
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the  
United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A  
listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make  
changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any  
particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all  
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor  
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by  
ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do var y in different applications and  
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.  
ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for  
use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or  
any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs,  
damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or  
unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
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