FGBS3040E1-F085 [ONSEMI]
集成式智能点火线圈驱动器;型号: | FGBS3040E1-F085 |
厂家: | ONSEMI |
描述: | 集成式智能点火线圈驱动器 驱动 驱动器 |
文件: | 总9页 (文件大小:586K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FGBS3040E1-F085
Integrated Smart Ignition CoilDriver
Description
Features
The FGBS3040E1-F085 is designed to directly drive an
ignition coil and control the current and spark event of
the coil. The coil current is controlled via the
input/diagnostic pin. When the input is driven high, the
IGBT is enabled to start charging the coil. The
FGBS3040E1-F085 w ill sink a current (IIN1) into the
input to denote this condition. When the collector current
increases to Icthr the input current into the
FGBS3040E1-F085 is reduced to IIN2 indicating the
collector current has reached this level. An input filter
suppresses input signals of less then 13 µsec in
.
.
.
.
.
.
.
400V 300mJ N Channel Ignition IGBT
Control Input buffering
Input spike filter of typical 13us
Operation from Ignition or Battery line
Ground shift tolerance +/- 1.5V
Programmable maximum dw ell time
Current programmable bidirectional
Input/Diagnostic pin
duration.
A
Max Dw ell timer is included in the
FGBS3040E1-F085 w hich w ill turn off the IGBT if the
input stays active for longer then the programmed time.
This time interval can be modified through an external
capacitor. When the Max Dw ell timer is exceeded, the
FGBS3040E1-F085 w ill enter a Soft-Shut-Dow n mode
(SSD) slow ly dropping the collector current thereby
discharging the coil such as to inhibit a spark event.
Once the soft shutdow n operation has started, any
transitions on the input signal are ignored until after
completion of the soft shutdow n function. The
FGBS3040E1-F085 w ill also limit the collector current of
the IGBT to Ic(lim) during charging.
.
.
Collector Current limit typical 16.5A
Soft Shutdow n of Collector Current after Max Dw ell
Applications
.
.
Coil on Plug Ignition systems
General ignition systems
© 2016 Semiconductor Components Industries, LLC.
September-2017, Rev. 2
Publication Order Number:
FGBS3040E1-F085/D
Block Diagram
Figure 1.
Figure 2.
Block Diagram of FGBS3040E1-F085
Typical Ignition Coil Driver Application
Typical Application
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2
Pin Configuration
The FGBS3040E1-F085 is assembled in a 7 lead TO263 package
TO263-7L
Pin Assignment (Top Through View)
Pin1
Pin2
Pin3
Pin4/Tab
GND
Vbat
IN/IFL
COL
NC
Emitter and control IC ground
Supply voltage
Input and diagnostic (bidirectional)
IGBT collector output
NC
Pin5
Pin6
CSSD Maximum dw ell time and Soft-Shut-Dow n current output (to external capacitor)
Pin7
RA Input reference current output (to external resistor)
Absolute Maximum Ratings1
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Parameter
Symbol
Values
Unit
Voltage at Vbat pin (excl. EMC transients)
Vbat
-0.3… 28
V
V
V
V
Voltage at IN/IFL pin
VIN1
- 1... 16
- 0.3... 6
450
Voltage at A & CSSD pins
VIN2
Collector Emitter Voltage (VIN = 0V) Ic=10mA
VC-GND(CL)
Operating Temperature Range
Storage Temperature Range
TJ
-40... +175
-40... +175
°C
°C
TSTG
Output Current
IC(lim)
IC(lim) max
300
A
mJ
Self Clamped Inductive Sw itched Energy @Tj = 25°C
Self Clamped Inductive Sw itched Energy @Tj = 150°C
Maximum pow er dissipation (continuous) from TC = 25°C
Thermal Resistance junction–case (typical)
Electrostatic Discharge Voltage (Human Body Model)
EAS
EAS
170
mJ
Pmax
150
W
RΘJC
1
°C /W
VESD (pin to pin)
2
4
kV
kV
V
ESD (CE)
according to MIL STD 883D, method 3015.7 and EOS/ESD
assn. standard S5.1 - 1993
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3
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance. ON Semiconductor does not recommend
exceeding them or designing to Absolute Maximum Ratings.
Symbol
VINL
Parameter
Conditions
Min.
-0.3
Typ.
Max.
2.05
Unit
Vbat = 5 to 28 V;
TJ= - 40 °C to +
175 °C (unless
V
Input low voltage
otherw ise specified)
Vbat = 5 to 28 V;
TJ= - 40 °C to +
175 °C (unless
VINH
VINHys
IIN1
2.85
0.25
16
V
V
Input high voltage
otherw ise specified)
Vbat = 5 to 28 V;
TJ= - 40 °C to +
Input voltage hysteresis
175 °C (unless
otherw ise specified)
See fig 8 for typical
values vs Ra
(Measured w ith
11.5k_, ±1%
resistor on A pin)
See fig 8 for typical
values vs Ra
18
20
10
mA
Input current (IC <
IcTHR)
IIN2
6
7.1
mA
Input current (IC >
IcTHR)
(Measured w ith
11.5k_, ±1%
resistor on A pin)
(Note 1)
)
Input current (IC < IcTHR
IIN1
4.2
1.8
70
mA
mA
pF
(Note 1)
)
Input current (IC > IcTHR
IIN2
VC-GND =25 V, VIN
0 V, f = 1 MHz
=
Coss
Output capacitance
(Measured w ith
11.5k_, ±1%
resistor on A pin)
IcTHR
Collector current
feedback (IFL)
threshold 25 C to
175C
4.3
5.3
6.8
A
(Measured w ith
11.5k_, ±1%
resistor on A pin)
IcTHR
Collector current
feedback (IFL)
threshold -40C
4.3
5.2
7.3
A
Note 3
Resistor for input
reference current
RA
200
kΩ
Minimum dwell time
capacitor
CSSDMIN
2.2
nF
(CSSDEXT=10nF)
(Ic: 90% -20%IL)
Maximum dwell time
TDMAX
ISLEW
19
23
28
ms
Soft-Shut-Down slew
rate
0.7
1.5
2.5
A/ms
CSSD Pin current for
TDMAX
ICSSD1
1.0
1.25
1.5
µA
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4
Electrical Characteristics
Symbol
Vbat1
Parameter
Operating voltage
Operating voltage
Supply current
Conditions
Min. Typ. Max. Unit
Coil sw itching
4
5
28
28
5
V
V
Vbat2
All functions
Ibat
(TJ=175°C, Vbat = 28V, RA open,
IN/IFL = 5V)
mA
VC-
GND(CL)
Collector emitter clamping
voltage
(IC = 10 mA)
390
450
30
V
IC(leak)
VC-
(TJ=175°C,VC-GND=300 V)
µA
Collector leakage current
Collector emitter saturation
voltage (Ic=10A, Tj=175°C)
Collector emitter saturation voltage
(Ic=10A, Tj=175°C)
1.8
V
GND(SA
T)
Current Limit
(Note 2)
14
19
15
A
IC(lim)
Tfall
Current fall time
Current fall time
µs
Tspike
Input spike filter delay on rising
and falling edge of IN/IFL
Input spike filter delay on rising and
falling edge of IN/IFL
13
13
µs
TD1
Turn on delay time (Time from
VIN/IFL=4.0 V to Vc-
gnd=Vbat/2)
Turn on delay time (Time from
VIN/IFL=4.0 V to Vc-gnd=Vbat/2)
10
10
26
28
µs
TD2
Turn off delay time (Time from
VIN/IFL=0.5 V to Vc-
gnd=Vbat/2)
Turn off delay time (Time from
VIN/IFL=0.5 V to Vc-gnd=Vbat/2)
17
µs
Notes :
1. Measured w ith open or shorted RA pin
2. Range can be varied betw een typ. 8-16.5A or can be eliminated w ith metal mask options
3. Icth max < 7.3A- 0.0077*(T+40C) for Tj from -40 to 25C
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5
Functional Description
Input and spike filter
When the input signal voltage reaches VINH, the coil
current w ill be sw itched on through the IGBT. When the
input voltage goes below VINL, the coil current through
the IGBT w ill be turned off. If the ignitor is in SSD mode,
If the CSSD capacitor has a value of < 2.2nF or the
CSSD pin is shorted to ground, the maximum dw ell time
and SSD functions w ill be disabled.
the input signal control is disabled.
After a SSD
sequence input control w ill be re-enabled after the input
has reached a valid low . Positive and negative spikes of
< Tspike duration at the input line w ill be filtered out and
w ill not turn on/off the IGBT.
Bidirectional input / diagnosis pin
The pin IN/IFL has a double function. It is used as input
pin to control the pow er stage (on/off) and as output pin
that delivers diagnostic information about the collector
current level (current flag).
Figure 5: Dwell time and Soft-Shut-Dow n
a) If the input voltage reaches VINH, the pow er stage is
turned on. If the input voltage is below VINL, the pow er
stage is turned off.
35
30
25
20
15
10
b) The IN/IFL pin sinks constantly a current of IIN1.
When the input voltage is above VINH and the collector
current exceeds the IcTHR threshold, the current flag is
set by sw itching a current sink at the bidirectional IN/IFL
pin to IIN2 (see Fig.4)
c) If resistor RA has a value <5.2k or >200k, IIN1 and
IIN2 w ill be set to their default values.
4
5
6
7
8
9
10
11
12
13
14
15
Cext [nF]
Figure 6: TDMAX as function of external CSSD
capacitor
Figure 7 show s the IN1 and IN2 currents in dependency
of the IRA current.
Figure 4: Bidirectional IN/INFL Diagnostic Pin
Maximum dwell time and soft-
shutdown (SSD)
When the IGBT is turned on, a delay timer, dependent
on the value of the external CSSD capacitor (see Fig.6),
is started. If a valid falling edge has not been received
after the time TDMAX, the IGBT w ill be turned off slow ly
as show n in Fig.5. The coil current w ill not exceed a
slew rate of typical 1.2A/ms. If a valid falling edge is
received after the time TDMAX, the edge w ill be ignored
and the soft shutdow n w ill be completed. The IGBT
cannot be subsequently turned on until a valid rising
edge is detected.
Figure 7: Typical IN1 and IN2 Currents vs Ra
The value for RA can be determined by the formula:
RA = (1.24/IRA)-750.
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6
Physical Dimensions
Figure 3.
Packaging Outline and Dimensions (TO263A07 Rev4)
Package drawings are providedas a service to customers consideringON Semiconductor components.Drawings may change in
any manner without notice. Please notethe revision and/or dateon the drawing andcontact a ON Semiconductor representative to
verify or obtain the most recent revision.Package specifications do notexpand the terms of ON Semiconductor’s worldwideterms
and conditions, specifically the warranty therein,which covers ON Semiconductor products.
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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the
United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A
listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make
changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by
ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do var y in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for
use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or
any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs,
damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or
unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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