FGD3245G2-F085 [ONSEMI]
450 V、23 A、1.3 V、320 mJ、DPAKEcoSPARK® II、N 沟道点火 IGBT;
| 型号： | FGD3245G2-F085 |
| 厂家： | 
ONSEMI |
| 描述： | 450 V、23 A、1.3 V、320 mJ、DPAKEcoSPARK® II、N 沟道点火 IGBT 栅 双极性晶体管 |
| 文件： | 总10页 (文件大小：450K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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ECOSPARK)2 320 mJ, 450 V,
N-Channel Ignition IGBT
G
COLLECTOR
(FLANGE)
E
JEDEC TO−263AB
D PAK−3 (TO−263, 3−LEAD)
FGD3245G2-F085,
FGB3245G2-F085
2
CASE 418AJ
COLLECTOR
(FLANGE)
General Description
G
The FGB3245G2−F085 and FGD3245G2 are N−channel IGBTs
designed in onsemi’s ECOSPARK−2 technology which helps in
eliminating external protection circuitry. The technology is optimized
for driving the coil in the harsh environment of automotive ignition
systems and offers out−standing Vsat and SCIS Energy capability also
at elevated operating temperatures. The logic level gate input is ESD
protected and features an integrated gate resistor. An integrated
zener−circuitry clamps the IGBT’s collecter−to−emitter voltage at
450 V which enables systems requiring a higher spark voltage
E
JEDEC TO−263AA
DPAK3 (TO−252 3 LD)
CASE 369AS
MARKING DIAGRAM
$Y&Z&3&K
FGB
3245G2
$Y&Z&3&K
FGD
3245G2
Features
• SCIS Energy = 320 mJ at T = 25°C
J
• Logic Level Gate Drive
• Low Saturation Voltage
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
FGB3245G2 = Device Code
FGD3245G2
Applications
$Y
&Z
&3
&K
= onsemi Logo
= Assembly Plant Code
= 3−Digit Date Code
= 2−Digits Lot Run Traceability Code
• Automotive lgnition Coil Driver Circuits
• Coil On Plug Applications
SYMBOL
COLLECTOR
R1
R2
GATE
EMITTER
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
September, 2021 − Rev. 4
FGD3245G2−F085/D
FGD3245G2−F085, FGB3245G2−F085
DEVICE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Collector to Emitter Breakdown Voltage (I = 1 mA)
Rating
Unit
V
BV
BV
450
CER
ECS
C
Emitter to Collector Voltage − Reverse Battery Condition (I = 10 mA)
28
V
C
E
Self Clamping Inductive Switching Energy (Note 1)
Self Clamping Inductive Switching Energy (Note 2)
320
mJ
mJ
A
SCIS25
E
180
SCIS150
I
Collector Current Continuous, at V = 5 V, T = 25°C
41
C25
GE
C
I
Collector Current Continuous, at V = 5 V, T = 110°C
27
A
C110
GE
C
V
Gate to Emitter Voltage Continuous
Power Dissipation Total, at T = 25°C
10
V
GEM
P
150
W
D
C
Power Dissipation Derating, for T > 25°C
1.1
W/°C
°C
°C
°C
°C
kV
kV
C
T
J
Operating Junction Temperature Range
Storage Junction Temperature Range
−40 to +175
T
T
−40 to +175
STG
T
L
Max. Lead Temp. for Soldering (Leads at 1.6 mm from case for 10 s)
Max. Lead Temp. for Soldering (Package Body for 10 s)
Electrostatic Discharge Voltage at 100 pF, 1500 ꢀ
CDM−Electrostatic Discharge Voltage at 1 ꢀ
300
260
4
PKG
ESD
2
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Self Clamping Inductive Switching Energy (E
) of 320 mJ is based on the test conditions that starting Tj = 25°C; L = 3 mHy,
SCIS25
I
= 14.6 A, V = 100 V during inductor charging and V = 0 V during the time in clamp.
SCIS
CC CC
2. Self Clamping Inductive Switching Energy (E
) of 180 mJ is based on the test conditions that starting Tj = 150°C; L = 3 mHy,
SCIS150
I
= 10.9 A, V = 100 V during inductor charging and V = 0 V during the time in clamp.
CC CC
SCIS
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2
FGD3245G2−F085, FGB3245G2−F085
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF STATE CHARACTERISTICS
BV
BV
Collector to Emitter Breakdown Voltage
Collector to Emitter Breakdown Voltage
I
= 2 mA, V = 0, R = 1 kꢀ,
420
440
−
−
480
500
V
V
CER
CE
J
GE
GE
T = −40 to 150°C
I
= 10 mA, V = 0 V, R = 0,
GE GE
CES
CE
T = −40 to 150°C
J
BV
BV
I
Emitter to Collector Breakdown Voltage
Gate to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
I
I
= −75 mA, V = 0 V, T = 25°C
28
12
−
−
14
−
−
−
V
V
ECS
CE
GE
J
=
2 mA
GES
GES
V
= 250 V, R = 1 kꢀ T = 25°C
25
1
ꢁ A
mA
mA
CER
CE
EC
GE
J
T = 150°C
J
−
−
I
Emitter to Collector Leakage Current
V
= 24 V
T = 25°C
J
−
−
1
ECS
T = 150°C
J
−
−
40
−
R
R
Series Gate Resistance
−
120
−
ꢀ
ꢀ
1
2
Gate to Emitter Resistance
10 k
30 k
ON STATE CHARACTERISTICS
V
V
V
Collector to Emitter Saturation Voltage
Collector to Emitter Saturation Voltage
Collector to Emitter Saturation Voltage
I
I
I
= 6 A, V = 4 V
T = 25°C
−
−
−
1.13
1.32
1.64
1.25
1.50
1.85
V
V
V
CE(SAT)
CE(SAT)
CE(SAT)
CE
CE
CE
GE
J
= 10 A, V = 4.5 V
T = 150°C
J
GE
= 15 A, V = 4.5 V
T = 150°C
J
GE
DYNAMIC CHARACTERISTICS
Q
Gate Charge
I
I
= 10 A, V = 12 V, V = 5 V
−
1.3
0.75
−
23
1.6
1.1
2.7
−
2.2
1.8
−
nC
V
G(ON)
CE
CE
GE
V
Gate to Emitter Threshold Voltage
= 1 mA, V = V
T = 25°C
J
GE(TH)
CE
CE
GE
T = 150°C
J
V
Gate to Emitter Plateau Voltage
V
= 12 V, I = 10 A
V
GEP
CE
CE
SWITCHING CHARACTERISTICS
t
Current Turn−On Delay Time−Resistive
Current Rise Time−Resistive
V
V
J
= 14 V, R = 1 kꢀ
−
−
−
−
−
0.9
2.6
5.4
2.7
−
4
7
ꢁ s
ꢁ s
ꢁ s
ꢁ s
mJ
d(ON)R
CE
GE
L
= 5 V, R = 1 kꢀ ꢂ
G
t
rR
T = 25°C
t
Current Turn−Off Delay Time−Inductive
Current Fall Time−Inductive
V
V
I
= 300 V, L = 1 mH,
15
15
320
d(OFF)L
CE
GE
CE
= 5 V, R = 1 kꢀ ꢂ
G
t
fL
= 6.5 A, T = 25°C
J
E
Self Clamped Inductive Switching
L = 3.0 mHy, RG = 1 kꢀ, TJ = 25°C
VGE = 5 V, (Note 3)
SCIS
THERMAL CHARACTERISTICS
Thermal Resistance Junction to Case
R
All packages
−
−
0.9
°C/W
ꢃ
JC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Self Clamping Inductive Switching Energy (E
) of 320 mJ is based on the test conditions that starting Tj = 25°C; L = 3 mHy,
SCIS25
I
= 14.6 A, V = 100 V during inductor charging and V = 0 V during the time in clamp.
CC CC
SCIS
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3
FGD3245G2−F085, FGB3245G2−F085
TYPICAL PERFORMANCE CURVES
100
10
1
40
R
= 1 kꢀ, V = 5 V, V = 100 V
R = 1 kꢀ, V = 5 V, V = 100 V
G GE CE
G
GE
CE
30
20
10
0
T = 25°C
J
T = 150°C
J
T = 25°C
J
T = 150°C
J
SCIS Curves valid for V
Voltages of <430 V
SCIS Curves valid for V
Voltages of <430 V
clamp
clamp
1
10
100
1000
0
3
6
9
12
15
t , TIME IN CLAMP (ꢁ s)
CLP
L, INDUCTANCE (mHy)
Figure 1. Self Clamped Inductive Switching
Current vs. Time in Clamp
Figure 2. Self Clamped Inductive Switching
Current vs. Inductance
1.20
1.45
I
= 6 A
I
= 10 A
CE
CE
V
GE
= 3.7 V
1.40
1.35
1.30
1.25
1.20
1.15
V
= 3.7 V
GE
V
= 4.0 V
GE
1.15
1.10
1.05
1.00
V
= 4.0 V
GE
V
GE
= 4.5 V
V
= 8 V
GE
V
GE
= 5 V
V
GE
= 4.5 V
V
GE
= 5 V
V
GE
= 8 V
−50 −25
0
25 50 75 100 125 150 175
−50 −25
0
25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 3. Collector to Emitter On−State Voltage
Figure 4. Collector to Emitter On−State Voltage
vs. Junction Temperature
vs. Junction Temperature
40
40
V
GE
V
GE
V
GE
V
GE
V
GE
= 8.0 V
= 5.0 V
= 4.5 V
= 4.0 V
= 3.7 V
V
GE
V
GE
V
GE
V
GE
V
GE
= 8.0 V
= 5.0 V
= 4.5 V
= 4.0 V
= 3.7 V
30
20
10
0
30
20
10
0
T = −40°C
T = 25°C
J
J
0
1
2
3
4
0
1
2
3
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 6. Collector to Emitter On−State Voltage
Figure 5. Collector to Emitter On−State Voltage
vs. Collector Current
vs. Collector Current
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4
FGD3245G2−F085, FGB3245G2−F085
TYPICAL PERFORMANCE CURVES (Continued)
40
30
20
10
0
40
V
V
V
V
V
= 8.0 V
= 5.0 V
= 4.5 V
= 4.0 V
= 3.7 V
PULSE DURATION = 80 ꢁ s
DUTY CYCLE = 0.5% MAX
= 5 V
GE
GE
GE
GE
GE
V
CE
30
20
10
0
T = 175°C
J
T = 25°C
J
T = −40°C
J
T = 175°C
J
1.0
1.5
V , GATE TO EMITTER VOLTAGE (V)
GE
2.0
2.5
3.0
3.5
4.0
4.5
0
1
2
3
4
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
Figure 7. Collector to Emitter On−Stage
Figure 8. Transfer Characteristics
Voltage vs. Collector Current
50.0
1.8
V
= V
GE
= 1 mA
V
= 5.0 V
CE
GE
45.0
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
I
CE
1.6
1.4
1.2
1.0
0.8
0.0
25
50
75
100
125
150
175
−50 − 25
0
25 50 75 100 125 150 175
T , CASE TEMPERATURE (°C)
C
T , JUNCTION TEMPERATURE (°C)
J
Figure 9. DC Collector Current vs. Case
Temperature
Figure 10. Threshold Voltage vs. Junction
Temperature
10000
12
I
= 6.5 A, V = 5 V, R = 1 kꢀ
GE G
CE
10
8
1000
100
10
V
= 24 V
ECS
Inductive t
OFF
6
4
V
CES
= 300 V
Resistive t
1
ON
2
V
CES
= 250 V
0.1
0
−50 −25
0
25 50 75 100 125 150 175
25
50
75
100
125
150
175
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 12. Switching Time vs. Junction
Temperature
Figure 11. Leakage Current vs. Junction
Temperature
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5
FGD3245G2−F085, FGB3245G2−F085
TYPICAL PERFORMANCE CURVES (Continued)
2000
1600
1200
800
400
0
10
f = 1 MHz
I
= 10 A, I = 1 mA, T = 25°C
CE
G
J
8
6
4
2
0
V
CE
= 6 V
C
IES
V
CE
= 12 V
C
RES
C
OES
0
5
10
15
20
25
0
10
20
30
40
50
60
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 13. Capacitance Collector to Emitter
Voltage
Figure 14. Gate Charge
480
I
= 10 mA
CER
470
460
450
440
430
420
T = −40°C
J
T = 25°C
J
T = 175°C
J
10
100
1000
6000
R , SERIES GATE RESISTANCE (ꢀ)
G
Figure 15. Breakdown Voltage vs. Series Gate Resistance
2
1
DUTY CYCLE − DESCENDING ORDER
D = 0.5
0.20
0.10
PDM
0.1
t1
0.05
0.02
t2
NOTES:
DUTY FACTOR: D = t / t
0.01
SINGLE PULSE
1
2
PEAK T = P
x Z
x R
+ T
JC C
ꢃ
ꢃ
J
DM
JC
0.01
10−5
10−4
10−3
10−2
10−1
100
t, RECTANGULAR PULSE DURATION (s)
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
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6
FGD3245G2−F085, FGB3245G2−F085
TESTE CIRCUITS AND WAVEFORMS
Figure 17. Inductive Switching Test Circuit
Figure 18. tON and tOFF Switching Test Circuit
Figure 19. Energy Test Circuit
Figure 20. Energy Waveforms
PACKAGE MARKING AND ORDERING INFORMATION
†
Device Marking
Device
Package
Reel Size
Tape Width
Shipping
FGD3245G2
FGD3245G2−F085
330 mm
16 mm
2500 / Tape & Reel
DPAK3 (TO−252 3 LD)
TO252AA
(Pb−Free)
2
FGB3245G2
FGB3245G2−F085
330 mm
24 mm
800 / Tape & Reel
D PAK−3 (TO−263, 3−LEAD)
TO263AB
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ECOSPARK is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/
or other countries.
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK3 (TO−252 3 LD)
CASE 369AS
ISSUE A
DATE 28 SEP 2022
GENERIC
MARKING DIAGRAM*
XXXXXX
XXXXXX
AYWWZZ
XXXX = Specific Device Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ
= Assembly Lot Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON13810G
DPAK3 (TO−252 3 LD)
PAGE 1 OF 1
DESCRIPTION:
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
ISSUE F
DATE 11 MAR 2021
SCALE 1:1
XXXXXX = Specific Device Code
A
= Assembly Location
WL
Y
= Wafer Lot
= Year
GENERIC MARKING DIAGRAMS*
WW
W
M
G
AKA
= Work Week
= Week Code (SSG)
= Month Code (SSG)
= Pb−Free Package
= Polarity Indicator
XX
AYWW
XXXXXXXXG
AKA
XXXXXXXXG
AYWW
XXXXXX
XXYMW
XXXXXXXXX
AWLYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
IC
Standard
Rectifier
SSG
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON56370E
D2PAK−3 (TO−263, 3−LEAD)
PAGE 1 OF 1
DESCRIPTION:
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
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