FGD4536TM [ONSEMI]
360 V PDP Trench IGBT;
| 型号： | FGD4536TM |
| 厂家： | 
ONSEMI |
| 描述： | 360 V PDP Trench IGBT 栅 瞄准线 双极性晶体管 功率控制 光电二极管 |
| 文件： | 总9页 (文件大小：1294K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FGD4536
360 V PDP Trench IGBT
Features
General Description
•
•
•
•
•
High Current Capability
Low Saturation Voltage: V
High Input Impedance
Fast Switching
Using novel trench IGBT technology, ON Semiconductor’s new
series of trench IGBTs offer the optimum performance for
consumer appliances and PDP TV applications where low
conduction and switching losses are essential.
= 1.59 V @ I = 50 A
C
CE(sat)
RoHS Compliant
Applications
•
PDP TV, Consumer Appliances
C
G
TO-252/D-PAK
E
Absolute Maximum Ratings
Symbol
Description
Ratings
360
Unit
V
V
Collector to Emitter Voltage
Gate to Emitter Voltage
Pulsed Collector Current
V
V
A
CES
30
GES
o
@ T = 25 C
220
I
C
C pulse(1)*
o
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
@ T = 25 C
125
50
W
W
C
P
D
o
@ T = 100 C
C
o
T
T
-55 to +150
-55 to +150
C
J
o
C
stg
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
o
T
300
C
L
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
1.0
Unit
o
R
R
(IGBT)
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
-
-
C/W
JC
o
62.5
C/W
JA
Notes:
(1) Half Sine Wave, D < 0.01, pluse width < 1sec
* Ic_pluse limited by max Tj
1
Publication Order Number:
FGD4536/D
©2011 Semiconductor Components Industries, LLC.
October-2017, Rev. 3
Package Marking and Ordering Information
Device Marking
FGD4536
Device
FGD4536TM
Package
TO252(D-PAK)
TO252(D-PAK)
Reel Size
380 mm
Tape Width
16 mm
Quantity
-
-
FGD4536
FGD4536TM-F065
380 mm
16 mm
Electrical Characteristics of the IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV
Collector to Emitter Breakdown Voltage
V
V
= 0V, I = 250 A
360
-
-
-
-
V
CES
GE
GE
C
BV
Temperature Coefficient of Breakdown
Voltage
CES
o
= 0V, I = 250 A
0.4
V/ C
C
T
J
I
Collector Cut-Off Current
G-E Leakage Current
V
V
= V
= V
, V = 0 V
-
-
-
-
100
A
CES
CE
GE
CES
GE
I
, V = 0 V
±400
nA
GES
GES
CE
On Characteristics
V
G-E Threshold Voltage
I
= 250 A, V = V
GE
2.4
-
3.3
4.0
-
V
V
GE(th)
C
CE
I
I
= 20 A, V = 15 V
1.19
C
C
GE
= 30 A, V = 15 V
GE
-
-
1.33
1.59
-
V
V
V
Collector to Emitter
Saturation Voltage
CE(sat)
I
= 50 A, V = 15 V,
GE
C
1.8
o
T
= 25 C
C
I
T
= 50 A, V = 15 V,
GE
C
-
1.66
-
V
o
= 125 C
C
Dynamic Characteristics
C
C
C
Input Capacitance
-
-
-
1295
56
-
-
-
pF
pF
pF
ies
V
= 30 V V = 0 V,
, GE
CE
Output Capacitance
oes
res
f = 1 MHz
Reverse Transfer Capacitance
43
Switching Characteristics
t
t
t
t
t
t
t
t
Turn-On Delay Time
Rise Time
-
-
-
-
-
-
-
-
-
-
-
5
20
41
182
5
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
d(on)
V
R
= 200 V, I = 20 A,
CC
C
r
= 5 , V = 15 V,
G
GE
o
Turn-Off Delay Time
Fall Time
d(off)
ResistiveLoad,T =25 C
C
f
Turn-On Delay Time
Rise Time
d(on)
V
R
= 200 V, I = 20 A,
CC
C
21
43
249
47
5.4
15
r
= 5 , V = 15 V,
G
GE
o
Turn-Off Delay Time
Fall Time
d(off)
f
Resistive Load, T = 125 C
C
Q
Q
Q
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
g
V
V
= 200 V I = 20 A,
, C
= 15 V
CE
GE
ge
gc
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2
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
Figure 5. Saturation Voltage vs. V
Figure 6. Saturation Voltage vs. V
GE
GE
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3
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. Case
Temperature at Variant Current Level
Figure 8. Capacitance Characteristics
Figure 9. Gate charge Characteristics
Figure 10. SOA Characteristics
Fgure 11. Turn-on Characteristics vs.
Gate Resistance
Figure 12. Turn-off Characteristics vs.
Gate Resistance
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4
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
Figure 14. Turn-off Characteristics vs.
Collector Current
Figure 15. Switching Loss vs. Gate Resistance
Figure 16. Switching Loss vs. Collector Current
Figure 17. Turn off Switching SOA Characteristics
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5
Typical Performance Characteristics
Figure 18.Transient Thermal Impedance of IGBT
PDM
t1
t2
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6
Mechanical Dimensions
Figure 19. TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
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and conditions, specifically the warranty therein, which covers ON Semiconductor products.
Dimensions in Millimeters
www.onsemi.com
7
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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