FGH75T65SQDTL4 [ONSEMI]
IGBT，650V，75A，场截止沟槽;
| 型号： | FGH75T65SQDTL4 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，650V，75A，场截止沟槽 双极性晶体管 |
| 文件： | 总10页 (文件大小：700K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT - Field Stop, Trench
650 V, 75 A
FGH75T65SQDTL4
Description
Using novel field stop IGBT technology, ON Semiconductor’s new
th
series of field stop 4 generation IGBTs offer the optimum
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performance for solar inverter, UPS, welder, telecom, ESS and PFC
applications where low conduction and switching losses are essential.
V
I
C
CES
Features
650 V
75 A
• Maximum Junction Temperature: T = 175°C
J
C
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: V
= 1.6 V @ I = 75 A
C
E1: Kelvin Emitter
E2: Power Emitter
CE(sat)
• 100% of the Parts Tested for I
• High Input Impedance
• Fast Switching
LM
G
E1
E2
• Tighten Parameter Distribution
• This Device is Pb−Free and is RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, Telecom, ESS, PFC
C
E2
E1
G
TO−247−4LD
CASE 340CJ
MARKING DIAGRAM
$Y&Z&3&K
FGH75T65
SQDTL4
$Y
&Z
&3
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
&K
FGH75T65SQDTL4= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
December, 2019 − Rev. 2
FGH75T65SQDTL4/D
FGH75T65SQDTL4
ABSOLUTE MAXIMUM RATINGS
Symbol
Description
FGH75T65SQDTL4
Unit
V
V
CES
GES
Collector to Emitter Voltage
Gate to Emitter Voltage
650
20
V
V
Transient Gate to Emitter Voltage
Collector Current
30
V
I
T
C
T
C
T
C
= 25°C
= 100°C
= 25°C
150
A
C
75
A
I
(Note 1)
(Note 2)
Pulsed Collector Current
300
A
LM
I
Pulsed Collector Current
300
A
CM
I
F
Diode Forward Current
T
T
= 25°C
125
A
C
Diode Forward Current
= 100°C
75
A
C
I
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
300
A
FM
P
T
T
= 25°C
375
W
W
°C
°C
°C
D
C
= 100°C
188
C
T
Operating Junction Temperature
Storage Temperature Range
−55 to +175
−55 to +175
300
J
T
STG
T
Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. V = 400 V, V = 15 V, I = 300 A, R = 26.4 W, Inductive Load.
CC
GE
C
G
2. Repetitive rating: Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Symbol
(IGBT)
Parameter
FGH75T65SQDT−F155
Unit
R
R
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.4
0.65
40
_C/W
_C/W
_C/W
q
JC
(Diode)
q
JC
R
q
JA
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Reel Size
Tape Width
Qty per Tube
FGH75T65SQDTL4
FGH75T65SQDTL4
TO−247−4LD
−
−
30
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2
FGH75T65SQDTL4
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Collector to Emitter Breakdown Voltage
V
V
= 0 V, I = 1 mA
650
−
−
−
V
V/°C
mA
CES
GE
C
DBV
/ DT Temperature Coefficient of Breakdown Voltage
= 0 V, I = 1 mA
−
0.6
CES
J
GE
C
I
Collector Cut−Off Current
G−E Leakage Current
V
V
= V
= V
, V = 0 V
−
−
−
−
250
400
CES
CE
CES
GE
I
, V = 0 V
nA
GES
GE
GES
CE
ON CHARACTERISTICS
V
G−E Threshold Voltage
I
I
I
= 75 mA, V = V
GE
2.6
−
4.5
1.6
6.4
2.1
−
V
V
V
GE(th)
C
C
C
CE
V
Collector to Emitter Saturation Voltage
= 75 A, V = 15 V
CE(sat)
GE
−
1.92
= 75 A, V = 15 V,
GE
T
= 175°C
C
DYNAMIC CHARACTERISTICS
V
= 30 V, V = 0 V,
C
Input Capacitance
−
−
−
4845
155
14
−
−
−
pF
pF
pF
CE
GE
ies
f = 1MHz
C
Output Capacitance
oes
C
Reverse Transfer Capacitance
res
SWITCHING CHARACTERISTICS
V
= 400 V, I = 18.8 A,
C
T
Turn−On Delay Time
Rise Time
CC
G
−
−
−
−
−
−
−
44
20
−
−
−
−
−
−
−
ns
ns
ns
ns
mJ
mJ
mJ
d(on)
R
= 15 W, V = 15 V,
GE
T
r
Inductive Load, T = 25°C
C
T
Turn−Off Delay Time
Fall Time
276
32
d(off)
T
f
E
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
307
266
573
on
off
E
E
ts
V
= 400 V, I = 37.5 A,
C
T
Turn−On Delay Time
Rise Time
CC
G
−
−
−
−
−
−
−
44
32
−
−
−
−
−
−
−
ns
ns
ns
ns
mJ
mJ
mJ
d(on)
R
= 15 W, V = 15 V,
GE
T
r
Inductive Load, T = 25°C
C
T
Turn−Off Delay Time
Fall Time
264
28
d(off)
T
f
E
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
599
608
1207
on
off
E
E
ts
V
= 400 V, I = 18.8 A,
C
T
Turn−On Delay Time
Rise Time
CC
G
−
−
−
−
−
−
−
40
24
−
−
−
−
−
−
−
ns
ns
ns
ns
mJ
mJ
mJ
d(on)
R
= 15 W, V = 15 V,
GE
T
r
Inductive Load, T = 25°C
C
T
Turn−Off Delay Time
Fall Time
316
36
d(off)
T
f
E
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
730
408
1138
on
off
E
E
ts
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3
FGH75T65SQDTL4
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted) (continued)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS
V
= 400 V, I = 37.5 A,
C
T
Turn−On Delay Time
CC
G
−
−
−
−
−
−
−
44
36
−
−
−
−
−
−
−
ns
ns
ns
ns
mJ
mJ
mJ
d(on)
R
= 15 W, V = 15 V,
GE
T
r
Rise Time
Inductive Load, T = 25°C
C
T
Turn−Off Delay Time
Fall Time
296
32
d(off)
T
f
E
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
1240
853
2093
on
off
E
E
ts
V
CE
V
GE
= 400 V, I = 75 A,
Q
Total Gate Charge
−
−
−
128
23
−
−
−
nC
nC
nC
C
g
= 15 V
Q
ge
Q
gc
Gate to Emitter Charge
Gate to Collector Charge
29
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ELECTRICAL CHARACTERISTICS OF THE DIODE (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
−
Typ
1.8
Max
2.1
−
Unit
I = 75 A
T
C
T
C
T
C
T
C
T
C
T
C
T
C
= 25°C
V
V
FM
Diode Forward Voltage
F
= 175°C
= 175°C
= 25°C
−
1.7
I = 75 A
F
mJ
E
rec
Reverse Recovery Energy
−
160
76
−
dl /dt = 200 A/ms
F
ns
T
rr
Diode Reverse Recovery Time
−
−
= 175°C
= 25°C
−
270
206
2199
−
nC
Q
Diode Reverse Recovery Charge
−
−
rr
= 175°C
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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4
FGH75T65SQDTL4
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 1. Typical Output
Figure 2. Typical Output
Characteristics
Characteristics
Figure 3. Typical Saturation
Voltage Characteristics
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
Figure 5. Saturation Voltage vs. VGE
Figure 6. Saturation Voltage vs. VGE
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5
FGH75T65SQDTL4
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Figure 8. Gate Charge Characteristics
Figure 7. Capacitance Characteristics
Figure 10. Turn−off Characteristics
Figure 9. Turn−on Characteristics vs.
vs. Gate Resistance
Gate Resistance
Figure 12. Turn−on Characteristics
Figure 11. Switching Loss vs.
Gate Resistance
vs. Collector Current
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6
FGH75T65SQDTL4
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Figure 13. Turn−off Characteristics
Figure 14. Switching Loss
vs. Collector Current
vs. Collector Current
Figure 15. Load Current vs. Frequency
Figure 16. SOA Characteristics
Figure 17. Forward Characteristics
Figure 18. Reverse Recovery Current
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7
FGH75T65SQDTL4
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Figure 19. Reverse Recovery Time
Figure 20. Stored Charge
PDM
t1
t2
Figure 21. Transient Thermal Impedance of IGBT
PDM
t1
t2
Figure 22. Transient Thermal Impedance of Diode
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−4LD
CASE 340CJ
ISSUE A
DATE 16 SEP 2019
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13852G
TO−247−4LD
PAGE 1 OF 1
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