FGP5N60LS [ONSEMI]
IGBT，600V，5A，场截止;
| 型号： | FGP5N60LS |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，600V，5A，场截止 局域网 通用开关 栅 瞄准线 双极性晶体管 |
| 文件： | 总10页 (文件大小：395K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
November 2013
FGP5N60LS
600 V, 5 A Field Stop IGBT
Features
General Description
•
•
•
•
High Current Capability
Using novel field stop IGBT technology, Fairchild’s new series of
field stop IGBTs offer the optimum performance for HID ballast
where low conduction losses are essential.
Low Saturation Voltage: VCE(sat) =1.7 V @ IC = 5 A
High Input Impedance
RoHS Compliant
Applications
•
HID Ballast
C
G
G C E
TO-220
E
Absolute Maximum Ratings
Symbol
Description
Ratings
Unit
VCES
VGES
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
600
20
10
5
V
V
A
A
A
@ TC = 25oC
@ TC = 100oC
IC
ICM (1)
PD
Collector Current
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Pulsed Collector Current
36
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
83
W
W
oC
oC
33
TJ
-55 to +150
-55 to +150
Tstg
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
oC
TL
300
Notes:
1: Repetitive test , Pulse width = 100 usec , Duty = 0.2, V = 13.5 V
GE
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Typ.
Max.
1.5
Unit
oC/W
oC/W
RJC
RJA
-
-
62.5
©2010 Fairchild Semiconductor Corporation
FGP5N60LS Rev. C1
1
www.fairchildsemi.com
Package Marking and Ordering Information
Part Number
Top Mark
Package Packing Method
Reel Size
Tape Width
Quantity
FGP5N60LS
FGP5N60LS
TO-220
Tube
N/A
N/A
50
Electrical Characteristics of the IGBT
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 A
600
-
-
-
-
V
BVCES
TJ
Temperature Coefficient of Breakdown
0.8
V/oC
V
GE = 0 V, IC = 250 A
Voltage
ICES
IGES
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
-
-
-
-
250
A
±400
nA
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 250 A, VCE = VGE
IC = 5 A, VGE = 15 V
IC = 5 A, VGE = 15 V,
2.7
-
3.9
1.7
4.5
2.1
V
V
Collector to Emitter Saturation Voltage
Collector to Emitter Saturation Voltage
-
-
-
1.8
2.7
3.1
-
3.2
-
V
V
V
T
C = 125oC
VCE(sat)
I
C = 14 A, VGE = 12 V
IC = 14 A, VGE = 12 V,
T
C = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
-
-
-
278
28
-
-
-
pF
pF
pF
V
CE = 30 V VGE = 0 V,
,
Output Capacitance
f = 1 MHz
Reverse Transfer Capacitance
11
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4.3
1.6
36
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
J
J
J
ns
ns
ns
ns
J
J
J
nC
nC
nC
Rise Time
Turn-Off Delay Time
Fall Time
VCC = 400 V, IC = 5 A,
R
G = 10, VGE = 15 V,
118
38
Inductive Load, TC = 25oC
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
130
168
4.1
1.8
37
td(off)
tf
Turn-Off Delay Time
Fall Time
V
CC = 400 V, IC = 5 A,
G = 10 , VGE = 15 V,
Inductive Load, TC = 125oC
R
150
80
Eon
Eoff
Ets
Qg
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
168
248
18.3
1.6
7.9
V
V
CE = 400 V, IC = 5 A,
GE = 15 V
Qge
Qgc
©2010 Fairchild Semiconductor Corporation
FGP5N60LS Rev. C1
2
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
40
40
TC = 25oC
20V
TC = 125oC
20V
13.5V
17V
12V
17V
15V
15V
12V
13.5V
30
30
10V
10V
20
20
VGE = 8V
10
10
0
VGE = 8V
0
0
2
4
6
8
10
0
2
4
6
8
10
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
30
40
Common Emitter
VCE = 20V
TC = 25oC
Common Emitter
VGE = 15V
TC = 25oC
TC = 125oC
20
30
TC = 125oC
20
10
0
10
0
2
4
6
8
10
12
0
1
2
3
4
5
6
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage,VGE [V]
Figure 5. Saturation Voltage vs. Case
Figure 6. Saturation Voltage vs. V
GE
Temperature at Variant Current Level
3.0
2.5
2.0
1.5
1.0
20
Common Emitter
VGE = 15V
Common Emitter
TC = -40oC
16
12
8
10A
5A
10A
5A
4
IC = 2.5A
IC = 2.5A
4
0
25
50
75
100
125
0
8
12
16
20
Case Temperature, TC [oC]
Gate-Emitter Voltage, VGE [V]
©2010 Fairchild Semiconductor Corporation
FGP5N60LS Rev. C1
3
www.fairchildsemi.com
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 8. Saturation Voltage vs. V
GE
GE
20
20
Common Emitter
TC = 25oC
Common Emitter
TC = 125oC
16
12
8
16
12
8
10A
10A
4
4
5A
5A
IC = 2.5A
4
IC = 2.5A
0
0
0
8
12
16
20
0
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
Figure 9. Capacitance Characteristics
Figure 10. Gate charge Characteristics
15
600
Common Emitter
TC = 25oC
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
500
12
Cies
400
VCC = 100V
300V
200V
9
6
3
0
300
Coes
Cres
200
100
0
0
5
10
15
20
1
10
30
Collector-Emitter Voltage, VCE [V]
Gate Charge, Qg [nC]
Figure 11. SOA Characteristics
Figure 12. Turn-on Characteristics vs.
Gate Resistance
100
10
10s
10
100s
td(on)
1ms
1
10ms
DC
tr
Common Emitter
VCC = 400V, VGE = 15V
Single Nonrepetitive
Pulse TC = 25oC
0.1
1
IC = 5A
TC = 25oC
TC = 125oC
Curves must be derated
linearly with increase
in temperature
0.01
0.5
0.1
1
10
100
1000
0
10
20
30
40
50
Collector-Emitter Voltage, VCE [V]
Gate Resistance, RG []
©2010 Fairchild Semiconductor Corporation
FGP5N60LS Rev. C1
4
www.fairchildsemi.com
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
Figure 14. Turn-on Characteristics vs.
Collector Current
10
300
tf
td(on)
100
tr
td(off)
1
Common Emitter
VCC = 400V, VGE = 15V
Common Emitter
VGE = 15V, RG = 10
TC = 25oC
TC = 125oC
IC = 5A
TC = 25oC
TC = 125oC
0.1
10
2
4
6
8
10
0
10
20
30
40
50
Collector Current, IC [A]
Gate Resistance, RG []
Figure 15. Turn-off Characteristics vs.
Collector Current
Figure 16. Switching Loss vs. Gate Resistance
800
1000
Common Emitter
VGE = 15V, RG = 10
Common Emitter
VCC = 400V, VGE = 15V
TC = 25oC
IC = 5A
TC = 125oC
TC = 25oC
TC = 125oC
tf
Eoff
100
100
Eon
td(off)
20
30
2
4
6
8
10
0
10
20
30
40
50
Collector Current, IC [A]
Gate Resistance, RG []
Figure 17. Switching Loss vs. Collector Current
Figure 18. Turn off Switching SOA
Characteristics
50
1000
Common Emitter
VGE = 15V, RG = 10
TC = 25oC
TC = 125oC
10
Eoff
100
1
Eon
Safe Operating Area
VGE = 13.5V, TC = 125oC
0.1
10
2
4
6
8
10
1
10
100
1000
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
©2010 Fairchild Semiconductor Corporation
FGP5N60LS Rev. C1
5
www.fairchildsemi.com
Typical Performance Characteristics
Figure 19.Transient Thermal Impedance of IGBT
2
1
0.5
0.2
0.1
PDM
0.05
t1
0.1
0.02
t2
0.01
single pulse
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.03
10-5
10-4
10-3
10-2
10-1
100
Rectangular Pulse Duration [sec]
©2010 Fairchild Semiconductor Corporation
FGP5N60LS Rev. C1
6
www.fairchildsemi.com
Mechanical Dimensions
Figure 20. TO-220 3L - TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003
©2010 Fairchild Semiconductor Corporation
FGP5N60LS Rev. C1
7
www.fairchildsemi.com
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®
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®
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
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First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
www.fairchildsemi.com
8
©2010 Fairchild Semiconductor Corporation
FGP5N60LS Rev. C1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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