FGPF4565 [ONSEMI]
IGBT，650 V，场截止沟槽;
| 型号： | FGPF4565 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，650 V，场截止沟槽 局域网 双极性晶体管 功率控制 |
| 文件： | 总7页 (文件大小：413K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
2015 年 3 月
FGPF4565
650 V 场截止沟槽 IGBT
特性
概述
通过利用创新型场截止 IGBT 技术， Fairchild 的新系列场截止槽
IGBT 可以为 IPL （强度脉冲光）提供最优性能。
•
•
•
•
高电流能力
低饱和电压：VCE(sat) =1.5 V( 典型值 )@ IC = 30 A
高输入阻抗
符合 RoHS 标准
应用
•
IPL ( 强脉冲光 )
TO-220F
(Retractable)
G C E
绝对最大额定值 TC = 25°C 除非另有说明
符号 描述
额定值
650
单位
V
VCES
集电极－发射极之间电压
栅极－发射极间电压
集电极脉冲电流
最大功耗
VGES
± 25
170
V
IC pulse (1)
*
A
@ TC = 25°C
@ TC = 25°C
@ TC = 100°C
30
W
PD
12
W
最大功耗
TJ
°C
°C
°C
工作结温
-55 至 +150
-55 至 +150
300
Tstg
TL
存储温度范围
用于焊接的最大引脚温度，距离外壳 1/8"，持续 5 秒
热性能
符号
参数
结至外壳热阻最大值
典型值
最大值
4.1
单位
°C/W
°C/W
RθJC
RθJA
-
-
62.5
结至环境热阻最大值
注：
1. 半正弦波：D< 0.01, 脉宽 < 1usec,
* Ic 脉宽 受限于最大 Tj
©2014 飞兆半导体公司
1
www.fairchildsemi.com
FGPF4565 Rev. C0
封装标识与定购信息
器件编号
顶标
封装
包装方法
卷尺寸
带宽
数量
FGPF4565
FGPF4565
TO-220F
50
塑料管
不适用
不适用
IGBT 电气特性 TC = 25°C 除非另有说明
符号
参数
测试条件
最小值 典型值 最大值 单位
关断特性
BVCES
VGE = 0 V, IC = 1 mA
GE = 0 V, IC = 1 mA
650
-
-
-
-
V
集电极－发射极击穿电压
击穿电压温度系数电压
ΔBVCES
ΔTJ
/
V
0.65
V/°C
ICES
IGES
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
-
-
-
-
250
μA
集电极切断电流
±400
nA
G-E 漏电流
导通特性
VGE(th)
IC = 250 μA, VCE = VGE
3.0
-
4.0
5.0
-
V
V
G-E 阈值电压
I
C = 20 A, VGE = 15 V
1.35
VCE(sat)
集电极－发射极间饱和电压
IC = 30 A, VGE = 15 V
1.50
1.75
1.88
-
V
V
IC = 30 A, VGE = 15 V,
TC = 150°C
-
动态特性
Cies
-
-
-
1650
34
-
-
-
pF
pF
pF
输入电容
VCE = 30 V VGE = 0 V,
f = 1 MHz
,
Coes
输出电容
Cres
17
反向传输电容
开关特性
td(on)
tr
-
-
-
-
-
-
-
-
-
-
-
11.2
44.8
40.8
153
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
导通延迟时间
上升时间
VCC = 400 V, IC = 30 A,
R
G = 5 Ω, VGE = 15 V,
td(off)
tf
td(on)
tr
td(off)
tf
关断延迟时间
下降时间
感性负载，TC = 25°C
12.8
59.2
40.8
202
导通延迟时间
上升时间
VCC = 400 V, IC = 30 A,
RG = 5 Ω, VGE = 15 V,
感性负载，TC = 150°C
关断延迟时间
下降时间
Qg
40.3
8.8
总栅极电荷
VCE = 400 V, IC = 30 A,
VGE = 15 V
Qge
Qgc
栅极－发射极间电荷
栅极－集电极间电荷
10.4
©2014 飞兆半导体公司
2
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FGPF4565 Rev. C0
典型性能特征
图 1. 典型输出特性
图 2. 典型输出特性
180
180
TC = 25oC
TC = 150oC
20V
12V
15V
10V
12V
150
150
120
90
60
30
0
20V
10V
120
15V
90
60
30
0
VGE = 8V
VGE = 8V
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
图 3. 典型饱和电压特性
图 4. 饱和电压与可变电流强度下壳温的关系
2.5
180
Common Emitter
VGE = 15V
150
120
90
60
30
0
60A
2
30A
Common Emitter
VGE = 15V
TC = 25oC
TC = 150oC
IC = 15A
1
-55 -30
Collector-Emitter Case Temperature, TC [oC]
0
30
60
90
120
150
0
1
2
3
4
5
6
7
Collector-Emitter Voltage, VCE [V]
图 5. 饱和电压与 V 的关系
图 6. 饱和电压与 V 的关系
GE
GE
20
16
12
8
20
Common Emitter
TC = 150oC
Common Emitter
TC = 25oC
16
12
IC = 15A
IC = 15A
30A
60A
30A
60A
8
4
4
0
0
4
8
12
16
20
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
©2014 飞兆半导体公司
3
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FGPF4565 Rev. C0
典型性能特征
图 7. 电容特性
图 8. 栅极电荷特性
15
10000
Common Emitter
TC = 25oC
12
Cies
200V
VCC = 100V
1000
100
9
400V
6
3
0
Coes
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
Cres
10
0
8
16
24
32
40
1
10
Collector-Emitter Voltage, VCE [V]
30
Gate Charge, Qg [nC]
图 9. 关断特性与栅极电阻的关系
图 10. 导通特性与栅极电阻的关系
1000
100
tr
td(off)
td(on)
100
tf
Common Emitter
VCC = 400V, VGE = 15V
Common Emitter
VCC = 400V, VGE = 15V
IC = 30A
TC = 25oC
TC = 150oC
IC = 30A
TC = 25oC
TC = 150oC
10
5
10
0
10
20
30
40
50
0
10
20
30
40
50
Gate Resistance, RG [Ω]
Gate Resistance, RG [Ω]
图 11. 开关损耗与栅极电阻的关系
图 12. 导通特性与集电极电流的关系
100
1000
Eoff
tr
td(on)
10
Eon
100
Common Emitter
VCC = 400V, VGE = 15V
Common Emitter
VGE = 15V, RG = 5Ω
IC = 30A
TC = 25oC
TC = 150oC
TC = 25oC
TC = 150oC
1
10
10
20
30
40
50
60
0
10
20
30
40
50
Collector Current, IC [A]
Gate Resistance, RG [Ω]
©2014 飞兆半导体公司
4
www.fairchildsemi.com
FGPF4565 Rev. C0
典型性能特征
图 13. 关断特性与集电极电流的关系
图 14. 开关损耗与集电极电流的关系
1000
1000
Common Emitter
VGE = 15V, RG = 5Ω
TC = 25oC
Eoff
TC = 150oC
td(off)
100
100
Eon
Common Emitter
VGE = 15V, RG = 5Ω
TC = 25oC
tf
TC = 150oC
10
10
10
10
20
30
40
50
60
20
30
40
50
60
Collector Current, IC [A]
Collector Current, IC [A]
图 25. IGBT 瞬态热阻抗
5
0.5
1
0.2
0.1
0.05
0.02
0.1
PDM
0.01
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
single pulse
0.01
10-5
10-4
10-3
10-2
10-1
100
101
102
Rectangular Pulse Duration [sec]
©2014 飞兆半导体公司
5
www.fairchildsemi.com
FGPF4565 Rev. C0
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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