FGY75T120SQDN [ONSEMI]
IGBT，超场截止 -1200V 75A;
| 型号： | FGY75T120SQDN |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，超场截止 -1200V 75A 双极性晶体管 |
| 文件： | 总9页 (文件大小：553K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Ultra Field Stop IGBT,
1200 V, 75 A
C
G
FGY75T120SQDN
General Description
E
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Ultra Field Stop Trench construction, and provides
superior performance in demanding switching applications, offering
both low on-state voltage and minimal switching loss. The IGBT is
well suited for UPS and solar applications. Incorporated into the
device is a soft and fast co-packaged free wheeling diode with a low
forward voltage.
Features
G
C
E
• Extremely Efficient Trench with Field Stop Technology
TO−247−3LD
CASE 340CD
• Maximum Junction Temperature: T = 175°C
J
• Low Saturation Voltage: V
= 1.7 V (Typ.) @ I = 75 A
C
CE(sat)
• 100% of the Parts Tested for I (1)
LM
• Soft Fast Reverse Recovery Diode
• Optimized for High Speed Switching
• RoHS Compliant
MARKING DIAGRAM
Applications
• Solar Inverter, UPS
$Y&Z&3&K
FGY75T120
SQDN
ABSOLUTE MAXIMUM RATINGS
(T = 25°C unless otherwise stated)
J
Symbol
Parameter
Collector to Emitter Voltage
Gate to Emitter Voltage
Value
1200
20
Unit
V
V
CES
V
GES
V
&Y
&Z
&3
&K
= onsemi Logo
= Assembly Plant Code
= Date Code (Year & Week)
= Lot Run Traceability Code
Transient Gate to Emitter Voltage
30
V
I
C
Collector Current @ T = 25°C
150
75
A
C
Collector Current @ T = 100°C
A
FGY75T120SQDN = Specific Device Code
C
I
(1)
(2)
Pulsed Collector Current @ T = 25°C
300
300
150
75
A
LM
C
I
Pulsed Collector Current
A
CM
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
I
Diode Forward Current @ T = 25°C
A
F
C
Diode Forward Current @ T = 100°C
A
C
I
Pulsed Diode Max. Forward Current
300
A
FM
P
D
Maximum Power Dissipation
W
@ T = 25°C
790
395
C
@ T = 100°C
C
T
Operating Junction Temperature
Storage Temperature Range
−55 to +175
−55 to +175
300
°C
°C
°C
J
T
stg
T
Maximum Lead Temp. for soldering
Purposes, 1/8″ from case for 5 s
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. V = 800 V, V = 15 V, I = 300 A, R = 68 W, Inductive Load.
CC
GE
C
G
2. Repetitive rating: Pulse width limited by max. junction temperature.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
July, 2022 − Rev. 3
FGY75T120SQDN/D
FGY75T120SQDN
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
0.19
0.38
40
Unit
°C/W
°C/W
°C/W
R
R
(IGBT)
(Diode)
Thermal Resistance, Junction to Case, Max.
q
JC
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
q
JC
R
q
JA
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Collector to Emitter Breakdown
Voltage
V
GE
= 0 V, I = 500 mA
1200
−
−
V
CES
C
I
Collector Cut-Off Current
V
V
= V
= V
, V = 0 V
−
−
−
−
400
200
mA
CES
CE
CES
GE
I
G−E Leakage Current
, V = 0 V
nA
GES
GE
GES
CE
ON CHARACTERISTICS
V
G−E Threshold Voltage
I
I
= 400 mA, V = V
GE
4.5
−
5.5
1.7
2.3
6.5
1.95
−
V
V
V
GE(th)
C
CE
V
Collector to Emitter Saturation
Voltage
= 75 A, V = 15 V
GE
CE(sat)
C
I
= 75 A, V = 15 V, T = 175°C
−
C
GE
C
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
CE
= 20 V V = 0 V, f = 1 MHz
−
−
−
9060
242
−
−
−
pF
pF
pF
ies
,
GE
C
Output Capacitance
oes
C
Reverse Transfer Capacitance
137
res
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Rise Time
V
= 600 V, I = 75 A,
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
64
96
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
ns
d(on)
CC
G
C
R
= 10 W, V = 15 V,
GE
t
r
Inductive Load, T = 25°C
C
t
Turn-Off Delay Time
Fall Time
332
28
ns
d(off)
t
f
ns
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
6.25
1.96
8.21
56
mJ
mJ
mJ
ns
on
off
E
E
ts
t
t
V
= 600 V, I = 75 A,
= 10 W, V = 15 V,
GE
d(on)
CC C
R
G
t
r
80
ns
Inductive Load, T = 175°C
C
Turn-Off Delay Time
Fall Time
364
88
ns
d(off)
t
f
ns
E
on
E
off
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
8.67
3.2
mJ
mJ
mJ
nC
nC
nC
E
ts
11.87
399
74
Q
V
CE
V
GE
= 600 V, I = 75 A,
g
C
= 15 V
Q
ge
gc
Q
192
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
FGY75T120SQDN
ELECTRICAL CHARACTERISTICS OF THE DIODE (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
−
Typ
3.4
Max
4
Unit
V
FM
Diode Forward Voltage
I
= 75 A
T
C
T
C
T
C
T
C
T
C
T
C
T
C
T
C
= 25°C
= 175°C
= 25°C
= 175°C
= 25°C
= 175°C
= 25°C
= 175°C
V
F
−
2.7
−
t
rr
Diode Reverse Recovery
Time
V
= 600 V, I = 75 A, dI /
−
99
−
ns
nC
A
R
F
F
dt = 500 A/ms
−
329
1001
5696
20
−
Q
Diode Reverse Recovery
Charge
−
−
rr
−
−
I
Diode Reverse Recovery
Current
−
−
rrm
−
34
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
FGY75T120SQDN
Top Mark
Package
Shipping
FGY75T120SQDN
TO−247−3LD
(Pb−Free)
30 / Tube
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3
FGY75T120SQDN
TYPICAL CHARACTERISTICS
Figure 1. Typical Output Characteristics (255C)
Figure 2. Typical Output Characteristics (1755C)
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Saturation Voltage vs. Case Temperature
at Variant Current Level
Figure 5. Saturation Voltage vs. VGE (255C)
Figure 6. Saturation Voltage vs. VGE (1755C)
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4
FGY75T120SQDN
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
Figure 9. Turn−On Characteristics vs.
Figure 10. Turn−Off Characteristics vs.
Gate Resistance
Gate Resistance
Figure 11. Turn−On Characteristics vs.
Figure 12. Turn−Off Characteristics vs.
Collector Current
Collector Current
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5
FGY75T120SQDN
TYPICAL CHARACTERISTICS
Figure 13. Switching Loss vs. Gate Resistance
Figure 14. Switching Loss vs. Collector Current
Figure 15. Load Current vs. Frequency
Figure 16. SOA Characteristics
Figure 17. Forward Characteristics
Figure 18. Reverse Recovery Time vs. diF/dt
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6
FGY75T120SQDN
TYPICAL CHARACTERISTICS
Figure 19. Reverse Recovery Charge vs. diF/dt
Figure 20. Reverse Recovery Current vs. diF/dt
Figure 21. Transient Thermal Impedance of IGBT
Figure 22. Transient Thermal Impedance of Diode
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CD
ISSUE A
DATE 18 SEP 2018
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
= Pb−Free Package
G
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13857G
TO−247−3LD
PAGE 1 OF 1
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