FJA4310OTU [ONSEMI]

NPN外延硅晶体管;
FJA4310OTU
型号: FJA4310OTU
厂家: ONSEMI    ONSEMI
描述:

NPN外延硅晶体管

局域网 放大器 晶体管
文件: 总7页 (文件大小:316K)
中文:  中文翻译
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
October 2008  
FJA4310  
NPN Epitaxial Silicon Transistor  
Audio Power Amplifier  
High Current Capability : IC=10A  
High Power Dissipation  
Wide S.O.A  
Complement to FJA4210  
TO-3P  
1
1.Base 2.Collector 3.Emitter  
Absolute Maximum Ratings*  
T
= 25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
200  
Units  
V
V
V
V
Collector-Base Voltage  
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Base Current (DC)  
140  
V
6
V
I
10  
A
C
I
1.5  
A
B
P
Collector Dissipation (TC=25°C)  
Junction Temperature  
100  
W
°C  
°C  
C
T
T
150  
J
Storage Temperature  
- 55 ~ 150  
STG  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Electrical Characteristics* Ta=25°C unless otherwise noted  
Symbol  
BVCBO  
Parameter  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Test Condition  
IC=5mA, IE=0  
Min.  
Typ.  
Max.  
Units  
V
200  
140  
6
BVCEO  
BVEBO  
ICBO  
IC=50mA, RBE=¥  
IE=5mA, IC=0  
V
V
VCB=200V, IE=0  
VEB=6V, IC=0  
10  
10  
mA  
mA  
IEBO  
Emitter Cut-off Current  
hFE  
* DC Current Gain  
VCE=4V, IC=3A  
IC=5A, IB=0.5A  
VCB=10V, f=1MHz  
VCE=5V, IC=1A  
50  
180  
0.5  
VCE(sat)  
Cob  
Collector-Emitter Saturation Voltage  
Output Capacitance  
V
250  
30  
pF  
fT  
Current Gain Bandwidth Product  
MHz  
* Pulse Test: Pulse Width£300ms, Duty Cycle£2%  
h
Classification  
FE  
Classification  
R
O
Y
hFE  
50 ~ 100  
70 ~ 140  
90 ~ 180  
© 2008 Fairchild Semiconductor Corporation  
FJA4310 Rev. C1  
www.fairchildsemi.com  
1
Typical Characteristics  
IB = 300mA IB = 250mA  
IB = 200mA  
1000  
100  
10  
10  
9
8
7
6
5
4
3
2
1
0
IB = 400mA  
VCE = 4 V  
IB = 150mA  
Ta = 25 o  
C
IB = 100mA  
Ta = 125 o  
C
Ta = - 25 o  
C
IB = 50mA  
IB = 20mA  
0.1  
1
10  
0
1
2
3
4
IC [A], COLLECTOR CURRENT  
VCE [V], COLLECTOR-EMITTER VOLTAGE  
Figure 1. Static Characterstic  
Figure 2. DC current Gain  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
1
IC = 10 IB  
Ta = 125 o  
C
0.1  
Ta = 25 o  
C
Ta = - 25 o  
C
IC= - 10A  
IC= - 5A  
0.01  
0.01  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
0.1  
1
10  
IC [A], COLLECTOR CURRENT  
IB [A], BASE CURRENT  
Figure 3. VCE(sat) vs. IB Characteristics  
Figure 4. Collector-Emitter Saturation Voltage  
10  
t=10ms  
VCE = 4 V  
IC (Pulse)  
10  
8
6
IC (DC)  
t=100ms  
Ta = 25 o  
C
1
4
2
0
Ta = 125 o  
C
TC = 25oC  
Single Pulse  
Ta = - 25 o  
C
0.1  
10  
100  
0.0  
0.5  
1.0  
1.5  
VCE [V], COLLECTOR-EMITTER VOLTAGE  
VBE [V], Base-Emitter On VOLTAGE  
Figure 5. Base-Emitter On Voltage  
Figure 6. Forward Bias Safe Operating Area  
© 2008 Fairchild Semiconductor Corporation  
FJA4310 Rev. C1  
www.fairchildsemi.com  
2
Typical Characteristics (Continued)  
140  
120  
100  
80  
60  
40  
20  
0
0
25  
50  
75  
100  
125  
150  
175  
TC[oC], CASE TEMPERATURE  
Figure 7. Power Derating  
© 2008 Fairchild Semiconductor Corporation  
FJA4310 Rev. C1  
www.fairchildsemi.com  
3
Package Dimension (TO-3P)  
5.00  
4.60  
15.80  
15.40  
1.65  
1.45  
5.20  
4.80  
(R0.50)  
20.10  
19.70  
18.90  
18.50  
3.70  
3.30  
(1.85)  
2.20  
1.80  
2.60  
2.20  
20.30  
19.70  
3.20  
2.80  
1.20  
0.55  
0.80  
1
3
0.75  
0.55  
5.45  
5.45  
(R0.50)  
NOTES:  
A) THIS PACKAGE CONFORMS TO EIAJ  
SC-65 PACKAGING STANDARD.  
B) ALL DIMENSIONS ARE IN MILLIMETERS.  
C) DIMENSIONING AND TOLERANCING PER  
ASME14.5 1973.  
D) DIMENSIONS ARE EXCLUSIVE OF BURRS,  
MOLD FLASH, AND TIE BAR EXTRUSIONS.  
E) DRAWING FILE NAME: TO3P03AREV2.  
© 2008 Fairchild Semiconductor Corporation  
FJA4310 Rev. C1  
www.fairchildsemi.com  
4
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As used herein:  
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PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
This datasheet contains the design specifications for product development.  
Specifications may change in any manner without notice.  
Advance Information  
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Preliminary  
First Production  
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This datasheet contains final specifications. Fairchild Semiconductor reserves  
the right to make changes at any time without notice to improve design.  
No Identification Needed  
Obsolete  
This datasheet contains specifications on a product that has been discontin-  
ued by Fairchild semiconductor. The datasheet is printed for reference infor-  
mation only.  
Rev. I31  
© 2008 Fairchild Semiconductor Corporation  
FJA4310 Rev. C1  
www.fairchildsemi.com  
5
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  
literature is subject to all applicable copyright laws and is not for resale in any manner.  
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