FJB5555TM [ONSEMI]

NPN 硅晶体管;
FJB5555TM
型号: FJB5555TM
厂家: ONSEMI    ONSEMI
描述:

NPN 硅晶体管

晶体管
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Is Now Part of  
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
June 2013  
FJB5555  
NPN Silicon Transistor  
Features  
• Fast Speed Switching  
• Wide Safe Operating Area  
• High Voltage Capability  
2
C
E
1
B
Application  
• Electronic Ballast  
D2-PAK  
1
1.Base 2.Collector 3.Emitter  
3
• Switched Mode Power Supplies  
Ordering Information  
Part Number  
Marking  
Package  
Packing Method  
FJB5555TM  
J5555  
D2-PAK  
Tape & Reel  
Absolute Maximum Ratings  
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-  
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-  
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The  
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.  
Symbol  
BVCBO  
BVCEO  
BVEBO  
IC  
Parameter  
Value  
Units  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current (DC)  
1050  
400  
V
14  
V
5
A
ICP  
10  
A
IB  
2
A
IBP  
Base Current (Pulse)  
Junction Temperature  
4
A
TJ  
150  
°C  
°C  
TSTG  
Storage Junction Temperature Range  
- 55 to +150  
Thermal Characteristics  
Values are at TA = 25°C unless otherwise noted.  
Symbol  
Parameter  
Value  
1.6  
Units  
W
TA = 25°C  
C = 25°C  
PD  
Total Device Dissipation  
T
100  
W
(1)  
Rθja  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
77.75  
1.25  
°C/W  
°C/W  
(2)  
Rθjc  
Notes:  
1. Device mounted on FR-4 PCB, board size= 101.5 mm x 114.5 mm.  
2. Rθjc test fixture under infinite cooling condition.  
© 2008 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
Rev. 1.1.0  
1
Electrical Characteristics(3)  
Values are at TA = 25°C unless otherwise noted.  
Symbol  
BVCBO  
BVCEO  
BVEBO  
Parameter  
Conditions  
Min.  
1050  
400  
14  
Typ.  
Max. Units  
Collector-Base Breakdown Voltage  
IC = 500 μA, IE = 0  
V
V
V
Collector-Emitter Breakdown Voltage IC = 5 mA, IB = 0  
Emitter-Base Breakdown Voltage  
IE = 500 μA, IC = 0  
VCE = 5 V, IC = 10 mA  
10  
hFE  
DC Current Gain  
VCE = 3 V, IC = 0.8 A  
20  
40  
IC = 1 A, IB = 0.2 A  
IC = 3.5 A, IB = 1.0 A  
IC = 3.5 A, IB = 1.0 A  
VCB = 10 V, f = 1 MHz  
0.17  
45  
0.50  
1.5  
V
V
V
CE(sat)  
Collector-Emitter Saturation Voltage  
V
BE(sat)  
Cob  
tON  
Base-Emitter Saturation Voltage  
Output Capacitance  
Turn-On Time  
1.2  
V
pF  
μs  
μs  
μs  
μs  
μs  
μs  
mJ  
1.0  
1.2  
VCC = 125 V, IC = 0.5 A,  
tSTG  
tF  
Storage Time  
IB1 = 45 mA, IB2 = -0.5 A,  
RL = 250 Ω  
Fall Time  
0.3  
tON  
Turn-On Time  
2.0  
2.5  
0.3  
VCC = 250 V, IC = 2.5 A,  
tSTG  
tF  
Storage Time  
IB1 = 0.5 A, IB2 = -1.0 A,  
RL = 100 Ω  
Fall Time  
6
EAS  
Avalanche Energy  
L = 2 mH  
Note:  
3. Pulse test: pulse width 300 μs, duty cycle 2%.  
© 2008 Fairchild Semiconductor Corporation  
Rev. 1.1.0  
www.fairchildsemi.com  
2
Typical Performance Characteristics  
1
Ta = 125oC  
Ta = 75oC  
IC = 5 IB  
VCE = 5V  
100  
Ta = 125oC  
Ta = 75oC  
Ta = 25oC  
Ta = 25oC  
Ta = - 25oC  
10  
Ta = - 25oC  
0.1  
1
0.01  
0.1  
1
10  
0.1  
1
10  
IC [A], COLLECTOR CURRENT  
IC [A], COLLECTOR CURRENT  
Figure 1. DC Current Gain  
Figure 2. Saturation Voltage  
1000  
100  
10  
IC = 5 IB  
tSTG  
Ta = 25oC  
1
Ta = - 25oC  
Ta = 125oC  
Ta = 75oC  
tF  
VCC=125V  
IB1=45mA, IB2=0.5A  
0.1  
0.01  
0.1  
1
10  
0.1  
1
IC [A], COLLECTOR CURRENT  
IC [A], COLLECTOR CURRENT  
Figure 3. Saturation Voltage  
Figure 4. Resistive Load Switching  
120  
10000  
1000  
100  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
tSTG  
tF  
VCC=250V  
I
B1=0.5A, IB2=1.0A  
10  
0.1  
0
25  
50  
75  
100  
125  
150  
175  
1
10  
Tc[oC], CASE TEMPERATURE  
IC [A], COLLECTOR CURRENT  
Figure 5. Resistive Load Switching  
Figure 6. Power Derating  
© 2008 Fairchild Semiconductor Corporation  
Rev. 1.1.0  
www.fairchildsemi.com  
3
Typical Performance Characteristics (Continued)  
8
Vcc = 50V  
VBE(off) = -5V  
LC = 1mH  
Ic = 4 Ib  
7
6
5
4
3
2
1
0
-5V  
200  
300  
400  
500  
600  
700  
800  
900 1000 1100 1200  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 7. Reverse Bias Safe Operating  
© 2008 Fairchild Semiconductor Corporation  
Rev. 1.1.0  
www.fairchildsemi.com  
4
Physical Dimensions  
D2-PAK  
Figure 8. 2-LEAD, TO263, SURFACE MOUNT (ACTIVE)  
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without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or  
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the  
warranty therein, which covers Fairchild products.  
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:  
http://www.fairchildsemi.com/packaging/.  
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:  
http://www.fairchildsemi.com/packing_dwg/PKG-TO263A02.pdf.  
© 2008 Fairchild Semiconductor Corporation  
Rev. 1.1.0  
www.fairchildsemi.com  
5
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Global Power ResourceSM  
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Green FPS¥  
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Datasheet contains the design specifications for product development. Specifications may change  
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The datasheet is for reference information only.  
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First Production  
Full Production  
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Rev. I64  
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arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
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