FJD5553TM [ONSEMI]
高压快速开关晶体管;
| 型号： | FJD5553TM |
| 厂家： | 
ONSEMI |
| 描述： | 高压快速开关晶体管 开关 高压 晶体管 |
| 文件： | 总6页 (文件大小：337K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
June 2013
FJD5553
NPN Silicon Transistor
Features
• Fast Speed Switching
• Wide Safe Operating Area
• High Voltage Capability
2
C
E
1
B
DPAK
Marking : J5553
Application
1
• Electronic Ballast
• Switch Mode Power Supplies
1. Base 2. Collector 3. Emitter
3
Ordering Information
Part Number
Marking
Package
Packing Method
FJD5553TM
J5553
D-PAK
Tape and Reel
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
BVCBO
BVCEO
BVEBO
IC
Parameter
Value
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
1050
400
V
14
V
3
A
ICP
6
A
IB
1
A
IBP
Base Current (Pulse)
Junction Temperature
2
A
TJ
150
°C
°C
TSTG
Storage Junction Temperature Range
- 55 to +150
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
1.25
Units
W
PD
Total Device Dissipation
TA = 25°C
(1)
Rθja
Thermal Resistance, Junction to Ambient
100
°C/W
Note:
1. Rθja test board and fixture under natural convection; JESD51-3 recommended thermal test board.
© 2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
Rev. 1.2.0
1
Electrical Characteristics(2)
Values are at TA = 25°C unless otherwise noted.
Symbol
BVCBO
BVCEO
BVEBO
Parameter
Conditions
Min.
1050
400
14
Typ.
Max Units
Collector-Base Breakdown Voltage
IC = 500 μA, IE = 0
V
V
V
Collector-Emitter Breakdown Voltage IC = 5 mA, IB = 0
Emitter-Base Breakdown Voltage
IE = 500 μA, IC = 0
CE = 5 V, IC = 10 mA
VCE = 3 V, IC = 0.4 A
V
10
hFE
DC Current Gain
30
60
VCE(sat) Collector-Emitter Saturation Voltage IC = 1 A, IB = 0.2 A
0.23
45
0.50
1.2
V
V
VBE(sat) Base-Emitter Saturation Voltage
IC = 1 A, IB = 0.2 A
Cob
tON
tSTG
tF
Output Capacitance
Turn-On Time
Storage Time
Fall Time
VCB = 10 V, f = 1 MHz
pF
μs
μs
μs
μs
μs
μs
mJ
1.0
1.2
VCC = 125 V, IC = 0.5 A,
IB1 = 45 mA, IB2 = 0.5 A,
RL = 250 Ω
0.3
tON
tSTG
tF
Turn-On Time
Storage Time
Fall Time
2.0
2.5
0.3
V
CC = 250 V, IC = 2.5 A,
IB1 = 0.5 A, IB2 = 1.0 A,
RL = 100 Ω
3.5
EAS
Avalanche Energy
L = 2 mH
Note:
2. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%.
© 2007 Fairchild Semiconductor Corporation
Rev. 1.2.0
www.fairchildsemi.com
2
Typical Performance Characteristics
1000
Ta = 75oC Ta = 125oC
VCE = 5V
IC = 5 IB
100
Ta = 125oC
Ta = - 25oC
Ta = 75oC
Ta = 25oC
Ta = - 25oC
10
Ta = 25oC
100
1
0.01
0.01
0.1
1
10
0.1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 1. DC Current Gain
Figure 2. Saturation Voltage
1000
100
10
IC = 5 IB
tSTG
Ta = 25oC
1
Ta = - 25oC
Ta = 75oC
Ta = 125oC
tF
VCC=125V
I
B1=45mA, IB2=0.5A
0.1
0.01
0.1
1
10
0.1
1
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 3. Saturation Voltage
Figure 4. Resistive Load Switching
10000
1000
100
1.5
1.2
0.9
0.6
0.3
0.0
tSTG
tF
VCC=250V
I
B1=0.5A, IB2=1.0A
10
0.1
0
25
50
75
100
125
150
175
1
10
Tc[oC], CASE TEMPERATURE
IC [A], COLLECTOR CURRENT
Figure 5. Resistive Load Switching
Figure 6. Power Derating
© 2007 Fairchild Semiconductor Corporation
Rev. 1.2.0
www.fairchildsemi.com
3
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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