FJL6920TU [ONSEMI]
NPN型三重扩散平面硅晶体管;![FJL6920TU](http://pdffile.icpdf.com/pdf2/p00370/img/icpdf/FJL6920TU_2258822_icpdf.jpg)
型号: | FJL6920TU |
厂家: | ![]() |
描述: | NPN型三重扩散平面硅晶体管 局域网 放大器 晶体管 |
文件: | 总6页 (文件大小:250K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FJL6920
High Voltage Color Display Horizontal
Deflection Output
•
•
•
High Collector-Base Breakdown Voltage : BV
= 1700V
CBO
Low Saturation Voltage : V (sat) = 3V (Max.)
For Color Monitor
CE
1
TO-264
1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Rating
1700
800
Units
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
V
V
CBO
CEO
EBO
6
V
I
I
20
A
C
*
30
A
CP
P
200
W
°C
°C
C
J
T
T
150
-55 ~ 150
STG
* Pulse Test: PW=300µs, duty Cycle=2% Pulsed
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
1
Units
mA
µA
mA
V
I
I
I
Collector Cut-off Current
V
V
V
=1400V, R =0
CES
CB
CB
EB
BE
Collector Cut-off Current
=800V, I =0
10
1
CBO
EBO
E
Emitter Cut-off Current
=4V, I =0
C
BV
BV
BV
Collector-Base Breakdown Voltage
Collector-EmitterBreakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
I =500µA, I =0
1700
800
6
CBO
CEO
EBO
C
E
I =5mA, I =0
V
C
B
I =500µA, I =0
V
E
C
h
h
V
V
=5V, I =1A
8
5.5
FE1
FE2
CE
CE
C
=5V, I =11A
8.5
3
C
V
V
(sat)
(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Storage Time
I =11A, I =2.75A
V
V
CE
C
B
I =11A, I =2.75A
1.5
3
BE
C
B
t
*
V
=200V, I =10A, R =20Ω
µs
µs
STG
CC
C
L
I
=2.0A, I = - 4.0A
t *
Fall Time
B1
B2
0.15
0.2
F
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
Thermal Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Typ
Max
0.625
Units
°C/W
R
Thermal Resistance, Junction to Case
θjC
©2001 Fairchild Semiconductor Corporation
Rev. A, May 2001
Typical Characteristics
16
100
10
1
IB=4.0A
VCE = 5V
14
12
10
8
Ta = 25oC
Ta = 125oC
IB=2.0A
IB=1.5A
Ta = - 25oC
IB=1.0A
6
IB=0.5A
IB=0.2A
4
2
0
0
2
4
6
8
10
0.1
1
10
100
IC [A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristics
Figure 2. DC Current Gain
10
10
IC = 5 IB
IC = 3 IB
Ta = 125oC
Ta = 125oC
1
1
Ta = 25oC
Ta = 25oC
Ta = - 25oC
Ta = - 25oC
0.1
0.1
0.01
0.1
0.01
0.1
1
10
100
1
10
100
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Collector-Emitter Saturation Voltage
10
16
VCC = 200V,
IC = 10A, IB1 = 2A
VCE = 5V
14
12
10
8
tSTG
1
tF
6
0.1
4
2
125oC
0.4
25oC
0.6
- 25oC
0.8
0.01
0
0.0
1
10
0.2
1.0
1.2
VBE [V], BASE-EMITTER VOLTAGE
IB2 [A], REVERSE BASE CURRENT
Figure 5. Base-Emitter On Voltage
Figure 6. Resistive Load Switching Time
©2001 Fairchild Semiconductor Corporation
Rev. A, May 2001
Typical Characteristics (Continued)
100
VCC = 200V,
VCC = 200V,
IC = 10A, IB2 = - 4A
IB1 = 2A, IB2 = - 4A
10
10
tSTG
tSTG
1
1
tF
0.1
tF
0.1
0.01
1
10
1
10
IB1 [A], FORWARD BASE CURRENT
IC [A], COLLECTOR CURRENT
Figure 7. Resistive Load Switching Time
Figure 8. Resistive Load Switching Time
100
40
RB2 = 0, IB1 = 15A
IC (Pulse)
IC (DC)
t = 10ms
t = 100ms
35
t = 1ms
VCC = 30V, L = 200µH
10
30
25
20
1
15
VBE(off) = -6V
0.1
0.01
10
VBE(off) = -3V
TC = 25oC
Single Pulse
5
1
1
10
100
1000
10000
10
100
1000
10000
VCE [V], COLLECTOR-EMITTER VOLTAGE
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 9. Forward Bias Safe Operating Area
Figure 10. Reverse Bias Safe Operating Area
300
250
200
150
100
50
0
0
25
50
75
100
125
150
175
TC [OC], CASE TEMPERATURE
Figure 11. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A, May 2001
18.30
17.70
5.20
4.80
20.20
19.80
A
16.60
B
7.40
7.00
1.00
R2.00
2.00
12.00
6.20
5.80
3.50
3.10
C
C
0.254
A
B
1.20
0.80
9.10
8.90
21.62
21.02
C
0.50
20.20
19.80
C
R1.00
1.70
1.30
1.50
4.05
2.60
2.40
3.20
2.80
C
1.50
1.50
3.10
2.50
C
2.70
2.30
20.50
19.50
C
C
2X
1.25
0.90
C
M
0.254
A
B
0.85
0.50
5.75
5.15
5.75
5.15
C
FRONT VIEW
SIDE VIEW
BACK VIEW
3.70
3.30
5.20
4.80
0.15
BOTTOM VIEW
NOTES:
A. PACKAGE REFERENCE: JEDEC TO264
VARIATION AA.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C
OUT OF JEDEC STANDARD VALUE.
D. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
E. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
F. THIS PACKAGE IS INTENDED ONLY FOR
"FS PKG CODE AR"
G. DRAWING FILE NAME: TO264A03REV2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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