FJMA790 [ONSEMI]
PNP外延硅晶体管;
| 型号： | FJMA790 |
| 厂家： | 
ONSEMI |
| 描述： | PNP外延硅晶体管 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：714K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
May 2014
FJMA790
PNP Epitaxial Silicon Transistor
High current surface mount PNP silicon switching transistor
for load management in portable applications
•
•
•
High Collector current
Low Collector-Emitter Saturation Voltage
RoHS Compliant
Pin 1
Pin 3
1
2
3
C
C
B
6
5
4
C
C
E
Collector
Emitter
Pin 6
Pin 4
MicroFET2X2
Absolute Maximum Ratings
T
= 25°C unless otherwise noted
a
Symbol
Parameter
Value
-50
-35
-5
Units
VCBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Power Dissipation
V
V
V
A
VCEO
VEBO
IC
-2
PD
Note1)
Note2)
1.56
0.8
W
W
TJ
Junction Temperature
Storage Temperature
150
°C
°C
TSTG
-55 ~ 150
Thermal Characteristics T =25°C unless otherwise noted
a
Units
Symbol
Parameter
Max.
RΘJA
Thermal Resistance, Junction to Ambient
Note1)
Note2)
80
154
°C/W
°C/W
2
Note1): The device mounted on a 1inch pad of 2 oz copper pad on a 1.5 × 1.5 in. board of FR-4 material.
Note2): The device mounted on a minimum pad of 2 oz copper pad on a 1.5 × 1.5 in. board of FR-4 material
©2008 Fairchild Semiconductor Corporation
FJMA790 Rev. A3
1
www.fairchildsemi.com
Electrical Characteristics
T = 25°C unless otherwise noted
a
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Parameter
Conditions
Min.
-50
-35
-5
Typ.
Max.
Units
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
IC = -100µA, IE = 0
V
V
I
C = -10mA, IB = 0
I
C = -100µA, IC = 0
V
V
CB = -35V, IC = 0
VEB = -4V, IC = 0
CE = -1.5V, IC = -1A
VCE = -1.5V, IC = -1.5A
CE = -3V, IC = -2A
-0.1
-0.1
µA
µA
IEBO
Emitter Cut-off Current
hFE
DC Current Gain
V
100
100
100
100
400
V
VCE = -2V, IC = -500mA
VCE(sat)
Collector-Emitter Saturation Voltage
IC = -500mA, IB = -5mA
IC = -1A, IB = -10mA
IC = -2A, IB = -50mA
-250
-350
-450
mV
mV
mV
VBE(sat)
VBE(on)
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = -1A, IB = -10mA
VCE = -2V, IC = -1A
-0.9
-0.9
V
V
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
790
FJMA790
MLP 2×2 Single
7”
8mm
3,000 units
2
www.fairchildsemi.com
FJMA790 Rev. A3
Typical Characteristics
600
Vce=-1.5V
Vce=-2.0V
500
400
300
200
100
125oC
75oC
500
125oC
400
75oC
300
25oC
25oC
200
-40oC
-40oC
100
1E-3
0.01
0.1
1
1E-3
0.01
0.1
1
Collector Current, [A]
Collector Current, [A]
Figure 1. DC Current Gain, Vce=1.5V
Figure 2. DC Current Gain, Vce=2V
0.5
0.4
0.3
0.2
0.1
0.0
Vce=-3.0V
Ic=40Ib
500
125oC
75oC
400
300
200
100
25oC
-40oC
25oC
-40oC
75oC
125oC
0.01
0.1
1
1E-3
0.01
0.1
1
Collector Current, [A]
Collector Current, [A]
Figure 3. DC Current Gain,Vce=3V
Figure 4. Collector-Emitter Satuation Voltage(1)
1.0
1.0
0.8
0.6
0.4
0.2
0.0
Ic=100Ib
Ic=100Ib
0.8
125oC
75oC
25oC
-40oC
0.6
25oC
125oC
75oC
-40oC
0.4
0.01
0.1
1
0.01
0.1
1
Collector Current, [A]
Collector Current, [A]
Figure 5. Collector-Emitter Satuation Voltage(2)
Figure 6. Base-Emitter Saturation Voltage
3
www.fairchildsemi.com
FJMA790 Rev. A3
Typical Performance Characteristics (Continued)
1E-7
1E-8
Vce=-2V
1
Vcb=-35V
1E-9
125oC 75oC
25oC
-40oC
0.1
1E-10
1E-11
0.01
25
50
75
100
125
0.4
0.6
0.8
1.0
Ta(oC), Ambent Temperature
Vfbe(on), Turn on voltage,[V]
Figure 7. Base- Emitter Turn On Voltage
Figure 8. Collector-Base Leakage Current
1E-7
2.0
Veb=-4V
1E-8
1E-9
1.5
1.0
0.5
0.0
1E-10
1E-11
0
25
50
75
100
125
150
175
25
50
75
100
125
Case Temperature, Ta[oC]
Ta(oC), Ambent Temperature
Figure 9. Base-Emitter Leakage Current
Figure 10. Power Derating
300
100
f=1mhz
90
80
70
60
50
40
30
20
10
f=1mhz
275
250
225
200
175
150
125
100
0
1
2
3
4
5
0
10
20
30
40
50
Reverse Voltage, VR[V]
Reverse Voltage, VR[V]
Figure 11. Input Capacitance
Figure 12. Output Capacitance
4
www.fairchildsemi.com
FJMA790 Rev. A3
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response
1
D
= 0.5
Rθ (t) = r(t) * Rθ
J A
J A
Rθ J A = 154 °C/W
0.2
P(p
0.1
0.1
)
t1
0.05
t2
TJ - TC = P * Rθ J A (t)
0.02
0.01
Duty Cy c le, D = t1 / t2
SIN GLE PU LSE
0.01
0.0001
0.001
0.01
0.1
t1, T IM E (s e c)
1
10
100
1000
5
www.fairchildsemi.com
FJMA790 Rev. A3
0.05 C
2.0
A
2X
B
2.0
1.70
1.00
(0.20)
No Traces
allowed in
this Area
0.05 C
4
6
PIN#1 IDENT
0.10 C
TOP VIEW
2X
1.05
2.30
ꢀꢁꢂꢃꢀꢁꢀꢃ
ꢀꢁꢄꢀꢀꢁꢀꢃ
0.47(6X)
0.08 C
1
3
SIDE VIEW
C
ꢀꢁꢀꢄꢃꢀꢁꢀꢄꢃ
SEATING
PLANE
0.40(6X)
0.65
RECOMMENDED
LAND PATTERN OPT 1
ꢄꢁꢀꢀꢀꢁꢀꢃ
(0.15)
(0.50)
ꢀꢁꢇꢀꢀꢁꢀꢃ
(0.20)4X
ꢀꢁꢉꢀꢀꢁꢀꢃ
PIN #1 IDENT
1.70
0.45
(0.20)
1
3
1.00
ꢀꢁꢄꢅꢀꢁꢀꢃ
(6X)
ꢀꢁꢃꢆꢀꢁꢀꢃ
ꢈꢁꢀꢀꢀꢁꢀꢃ
4
6
(0.50)
ꢄꢁꢀꢀꢀꢁꢀꢃ
1.05
0.66
2.30
6
4
(6X)
C A B
C
ꢀꢁꢇꢀꢀꢁꢀꢃ
0.47(6X)
0.65
0.10
1
3
1.30
BOTTOM VIEW
0.05
0.40(7X)
RECOMMENDED
LAND PATTERN OPT 2
0.65
NOTES:
A. PACKAGE DOES NOT FULLY CONFORM
TO JEDEC MO-229 REGISTRATION
B. DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 2009.
D. LAND PATTERN RECOMMENDATION IS
EXISTING INDUSTRY LAND PATTERN.
E. DRAWING FILENAME: MKT-MLP06Lrev4.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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