FJN3303FTA [ONSEMI]
高压快速开关NPN功率晶体管;
| 型号： | FJN3303FTA |
| 厂家： | 
ONSEMI |
| 描述： | 高压快速开关NPN功率晶体管 开关 PC 高压 晶体管 |
| 文件： | 总8页 (文件大小：235K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
December 2009
FJN3303F
High Voltage Fast-Switching NPN Power Transistor
Features
• High Voltage Capability
• High Switching Speed
• Suitable for Electronic Ballast and Charger
• Green packaging
TO-92
1
1. Emitter 2. Collector 3.Base
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
Units
700
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse) *
Base Current (DC)
400
9
1.5
V
A
ICP
3
A
IB
0.75
1.5
A
IBP
Base Current (Pulse) *
Junction Temperature
Storage Temperature range
A
TJ
150
°C
°C
TSTG
-65 to +150
* Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Total Device Dissipation
Value
Units
PD
TC = 25°C
TA = 25°C
1.1
650
W
mW
RθJC
RθJA
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
48
°C/W
°C/W
190
Ordering Information
Part Number
FJN3303FBU
FJN3303FTA
Marking Info.
Package
TO-92 (Straight)
TO-92 (Form)
Packing Method
BULK
Remarks
Green EMC
Green EMC
J3303F
J3303F
AMMO
© 2009 Fairchild Semiconductor Corporation
FJN3303F Rev. A1
www.fairchildsemi.com
1
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Parameter
Conditions
Min. Typ. Max. Units
Collector-Base Breakdown Voltage
IC = 500μA, IE = 0
700
400
9
V
V
Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
IE = 500μA, IC = 0
VCB = 700V, IE = 0
VEB = 9V, IC = 0
V
10
10
23
μA
μA
IEBO
hFE1
hFE2
VCE = 2V, IC = 0.5A
VCE = 2V, IC = 1.0A
14
5
VCE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 0.5A, IB = 0.1A
IC = 1.0A, IB = 0.25A
IC = 1.5A, IB = 0.5A
0.5
1.0
3.0
V
V
V
VBE(sat)
IC = 0.5A, IB = 0.1A
IC = 1.0A, IB = 0.25A
1.0
1.2
V
V
fT
tON
tSTG
tF
Current Gain Bandwidth Product
Turn On Time
VCE = 10V, IC = 0.1A
4
MHz
μs
1.1
4.0
0.7
VCC = 125V, IC = 1A
IB1 = - IB2 = -0.2A
RL = 125Ω
Storage Time
μs
Fall Time
μs
© 2009 Fairchild Semiconductor Corporation
FJN3303F Rev. A1
www.fairchildsemi.com
2
Typical Performance Characteristics
Figure 1. Static Characteristic
Figure 2. DC Current Gain
100
10
1
1.6
VCE = 2V
1.4
TA = 75 o
C
TA = 125 o
C
1.2
IB = 120 mA
TA = - 25 o
C
TA = 25 o
C
1.0
0.8
IB = 40 mA
IB = 20 mA
0.6
0.4
0.2
0.0
1E-3
0.01
0.1
1
0
1
2
3
4
5
6
7
8
9
10
IC [A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
10
10
TA = 125 o
C
IC = 4 IB
IC = 4 IB
TA = 75 o
TA = 25 o
C
C
1
TA = - 25 o
C
TA = 25 o
C
TA = - 25 o
C
1
TA = 75 o
C
0.1
TA = 125 o
C
0.1
0.01
0.01
0.01
0.1
1
10
0.1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 5. Resistive Load Switching Time
Figure 6. Resistive Load Switching Time
10
10
tSTG
tSTG
1
1
tF
tF
0.1
0.1
IB1 = 120mA, IB2 = - 40mA
VCC = 310V
IB1 = - IB2 = 0.2A
VCC = 125V
0.01
0.1
0.01
0.1
1
1
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
© 2009 Fairchild Semiconductor Corporation
FJN3303F Rev. A1
www.fairchildsemi.com
3
Typical Performance Characteristics (Continued)
Figure 7. Forward Biased Safe Operating Area
Figure 8. Reverse Biased Safe Operating Area
10
10
IC (DC)
1
0.1
1
0.01
TC = 25oC
Single Pulse
1E-3
IB1 = 1A, RB2 = 0
VCC = 50V, L =1 mH
0.1
100
0.1
1
10
100
1000
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 9. Power Derating
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
TA = 25 o
C
TC = 25 o
C
0
25
50
75
100
125
150
175
TA [oC], AMBIENT TEMPERATURE
© 2009 Fairchild Semiconductor Corporation
FJN3303F Rev. A1
www.fairchildsemi.com
4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
www.onsemi.com
相关型号：
FJN3303TA
Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-92, 3 PIN
FAIRCHILD
FJN3304RBU
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN
FAIRCHILD
FJN3304RTA
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN
FAIRCHILD
FJN3305RBU
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
ONSEMI
©2020 ICPDF网 联系我们和版权申明