FJP3307DTU [ONSEMI]
高电压快速开关 NPN 功率晶体管;
| 型号： | FJP3307DTU |
| 厂家： | 
ONSEMI |
| 描述： | 高电压快速开关 NPN 功率晶体管 局域网 开关 晶体管 |
| 文件： | 总7页 (文件大小：281K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
July 2008
FJP3307D
High Voltage Fast Switching NPN Power Transistor
Features
•
Built-in Diode between Collector and Emitter
•
Suitable for Electronic Ballast and Switch Mode Power Supplies
Internal Schematic Diagram
C
B
TO-220
1
1.Base 2.Collector 3.Emitter
E
Absolute Maximum Ratings
Symbol
Parameter
Value
700
400
9
Units
VCBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
VCEO
VEBO
IC
V
Collector Current (DC)
* Collector Current (Pulse)
Base Current (DC)
8
A
ICP
16
A
IB
4
A
PC
Collector Dissipation (TC = 25°C)
Junction Temperature
Storage Temperature
80
W
°C
°C
TJ
150
TSTG
-55 ~ 150
* Pulse Test: PW = 300ms, Duty Cycle = 2% Pulsed
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
BVCBO
BVCEO
BVEBO
IEBO
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Emitter Cut-off Current
Conditions
Min.
Typ.
Max Units
IC = 500μA, IE = 0
700
400
9
V
V
V
IC = 5mA, IB = 0
IE = 500μA, IC = 0
VEB = 9V, IC = 0
1
mA
hFE1
hFE2
DC Current Gain
VCE = 5V, IC = 2A
VCE = 5V, IC = 5A
8
5
40
30
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
IC = 8A, IB = 2A
1
2
3
V
V
V
© 2008 Fairchild Semiconductor Corporation
FJP3307D Rev. A
www.fairchildsemi.com
1
Symbol
Parameter
Conditions
Min.
Typ.
Max Units
VBE(sat)
Base-Emitter Saturation Voltage
IC = 2A, IB = 0.4A
1.2
1.6
2.5
V
V
IC = 5A, IB = 1A
IC = 3A
VF
Diode Forward Voltage
Output Capatitance
Storage Time
Fall Time
V
Cob
tSTG
tF
VCB = 10V, IE = 0, f = 1MHz
60
pF
μs
μs
μs
ns
3
VCC = 125V, IC = 5A
IB1 = -IB2 = 1A, RL = 50Ω
0.7
2.3
150
tSTG
tF
Storage Time
Fall Time
VCC = 30V, IC = 5A, L=200μH
IB1=1A, RBB = 0Ω, VBE(OFF)= -5V
VCLAMP = 250V
* Pulse test: PW = 300μs, Duty cycl e= 2%
hFE Classification
Classification
H1
H2
26 ~ 39
hFE1
15 ~ 28
© 2008 Fairchild Semiconductor Corporation
FJP3307D Rev. A
www.fairchildsemi.com
2
Typical Characteristics
Figure 1. Static Characterstic
Figure 2. DC Current Gain (H1 Grade)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
VCE = 5V
TC = 75 o
C
IB=300mA
TC = 125 o
C
TC = - 25 o
C
TC = 25 o
C
10
IB=100mA
IB=50mA
1
0.1
0
1
2
3
4
5
6
7
8
9
10
1
10
VCE [V], COLLECTOR-EMITTER VOLTAGE
IC [A], COLLECTOR CURRENT
Figure 3. DC Current Gain (H2 Grade)
Figure 4. Collector-Emitter Saturation Voltage
100
10
IC = 5 IB
VCE = 5V
TC = 75 o
C
TC = 125 o
C
TC = 125 o
C
TC = - 25 o
C
TC = 25 o
C
1
TC = 75 o
C
TC = 25 o
TC = - 25 o
C
10
C
0.1
1
0.1
0.01
0.01
1
10
0.1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 5. Base-Emitter Saturation Voltage
Figure 6. Output Capacitance
10
1000
IC = 5 IB
f = 1MHz, IE = 0
TC = 25 o
C
TC = - 25 o
C
1
100
TC = 125 o
C
TC = 75 o
C
0.1
0.01
10
0.1
1
10
1
10
100
IC [A], COLLECTOR CURRENT
VCB [V], COLLECTOR-BASE VOLTAGE
© 2008 Fairchild Semiconductor Corporation
FJP3307D Rev. A
www.fairchildsemi.com
3
Typical Characteristics (Continued)
Figure 7. Power Derating
Figure 8. Reverse Biased Safe Operating Area
100
100
80
60
40
20
0
10
1
VCC = 50V, IB1 = - IB2 = 1A
L = 1mH
0.1
10
0
25
50
75
100
125
150
175
200
100
1000
TC [oC], CASE TEMPERATURE
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 9. Forward Biased Safe Operating Area
100
IC(MAX), Pulse
10μs
10
100μs
1ms
IC(MAX), DC
1
0.1
TC = 25 oC
Single Pulse
0.01
1
10
100
1000
VCE [V], COLLECTOR-EMITTER VOLTAGE
© 2008 Fairchild Semiconductor Corporation
FJP3307D Rev. A
www.fairchildsemi.com
4
SUPPLIER "B" PACKAGE
SHAPE
ꢀꢁꢂꢂ
3.50
10.67
9.65
SUPPLIER "A" PACKAGE
SHAPE
E
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE "D"
E
16.51
15.42
9.40
8.13
E
1
2
3
4.10
2.70
[2.46]
C
14.04
12.70
2.13
2.06
FRONT VIEWS
H
4.70
4.00
1.62
1.42
1.62
1.10
2.67
2.40
"A1"
8.65
7.59
1.00
0.55
SEE NOTE "F"
ꢃ
ꢄ
ꢃ
ꢄ
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE "I"
BOTTOM VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
3
2
1
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV9
H
PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
0.60
0.36
2.85
2.10
BACK VIEW
SIDE VIEW
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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