FJPF13009H1TU [ONSEMI]
NPN芯片晶体管;型号: | FJPF13009H1TU |
厂家: | ONSEMI |
描述: | NPN芯片晶体管 局域网 开关 晶体管 |
文件: | 总7页 (文件大小:266K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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September 2014
FJPF13009
NPN Silicon Transistor
Description
Features
• High-Voltage Capability
• High Switching Speed
The FJPF13009 is a 700 V, 12 A NPN silicon epitaxial
planar transistor. The FJPF13009 is available with multi-
ple hFE bin classes for ease of design use. The
FJPF13009 is designed for high speed switching applica-
tions which utilizes the industry standard TO-220F pack-
age offering flexibility in design and excellent power
dissipation.
Applications
• Electronic Ballast
• Switching Regulator
• Motor Control
• Switched Mode Power Supply
TO-220F
1.Base 2.Collector 3.Emitter
1
Ordering Information
Part Number(1)
FJPF13009H1TU
FJPF13009H2TU
Top Mark
J13009-1
J13009-2
Package
Packing Method
TO-220F 3L
TO-220F 3L
Rail
Rail
Notes:
1. The affix “-H1, H2” means the hFE classification. The suffix “-TU” means the tube packing method.
© 2003 Fairchild Semiconductor Corporation
FJPF13009 Rev. 1.2.1
www.fairchildsemi.com
Absolute Maximum Ratings(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
700
400
V
9
V
12
A
ICP
24
A
IB
6
50
A
PD
Total Device Dissipation (TC = 25°C)
Junction Temperature
W
°C
°C
TJ
150
TSTG
Storage Temperature Range
-65 to +150
Note:
2. These ratings are based on a maximum junction temperature of 150°C. These are steady-state limits. Fairchild
Semiconductor should be consulted on application involving pulsed or low-duty-cycle operations.
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Typ.
Max
Unit
V
VCEO(sus) Collector-Emitter Sustaining Voltage IC = 10 mA, IB = 0
400
IEBO
hFE1
hFE2
Emitter Cut-Off Current
DC Current Gain(3)
VEB = 9 V, IC = 0
1
mA
VCE = 5 V, IC = 5 A
VCE = 5 V, IC = 8 A
IC = 5 A, IB = 1 A
8
6
40
30
1.0
1.5
3.0
1.2
1.6
Collector-Emitter Saturation
Voltage(3)
V
CE(sat)
IC = 8 A, IB = 1.6 A
IC = 12 A, IB = 3 A
IC = 5 A, IB = 1 A
V
V
V
BE(sat) Base-Emitter Saturation Voltage(3)
IC = 8 A, IB = 1.6 A
VCB = 10 V, f = 0.1 MHz
VCE = 10 V, IC = 0.5 A
Cob
fT
Output Capacitance
Current Gain Bandwidth Product
Turn-On Time
180
pF
4
MHz
tON
tSTG
tF
1.1
3.0
0.7
VCC = 125 V, IC = 8 A,
IB1 = - IB2 = 1.6 A,
RL = 15.6 Ω
Storage Time
μs
Fall Time
Note:
3. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%
hFE Classification
Classification
H1
H2
15 ~ 28
hFE1
8 ~ 17
© 2003 Fairchild Semiconductor Corporation
FJPF13009 Rev. 1.2.1
www.fairchildsemi.com
2
Typical Performance Characteristics
10
100
IC = 3 IB
VCE = 5V
VBE(sat)
1
10
0.1
VCE(sat)
0.01
0.1
1
0.1
1
10
100
1
10
100
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC Current Gain
Figure 2. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
10000
1000
VCC=125V
IC=5IB
1000
100
10
1
tR
tD, VBE(off)=5V
100
10
0.1
1
10
100
0.1
1
10
100
1000
VCB[V], COLLECTOR BASE VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Collector Output Capacitance
Figure 4. Turn-On Time
100
10
10000
VCC=125V
IC=5IB
tSTG
1
1000
0.1
0.01
tF
100
0.1
1
10
100
1000
1
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 5. Turn-Off Time
Figure 6. Forward Bias Safe Operating Area
© 2003 Fairchild Semiconductor Corporation
FJPF13009 Rev. 1.2.1
www.fairchildsemi.com
3
Typical Performance Characteristics (Continued)
100
70
60
50
40
30
20
10
0
Vcc=50V,
I
B1=1A, IB2 = -1A
L = 1mH
10
1
0.1
0.01
0
25
50
75
100
125
150
175
10
100
1000
10000
TC[oC], CASE TEMPERATURE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 7. Reverse Bias Safe Operating Area
Figure 8. Power Derating
© 2003 Fairchild Semiconductor Corporation
FJPF13009 Rev. 1.2.1
www.fairchildsemi.com
4
10.36
9.96
2.66
2.42
B
A
B
3.28
3.08
7.00
3.40
3.20
0.70
SEE NOTE "F"
SEE NOTE "F"
6.88
6.48
1 X 45°
16.07
15.67
B
16.00
15.60
B
(3.23)
3
1
1.47
1.24
2.96
2.56
2.14
0.90
0.70
0.50
10.05
9.45
M
A
30°
0.45
0.25
0.60
0.45
B
2.54
2.54
4.90
4.50
B
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B
DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. OPTION 1 - WITH SUPPORT PIN HOLE.
OPTION 2 - NO SUPPORT PIN HOLE.
G. DRAWING FILE NAME: TO220M03REV5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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