FJT44TF [ONSEMI]

NPN 外延硅晶体管;
FJT44TF
型号: FJT44TF
厂家: ONSEMI    ONSEMI
描述:

NPN 外延硅晶体管

开关 光电二极管 晶体管
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
October 2014  
FJT44  
NPN Epitaxial Silicon Transistor  
Features  
• High-Voltage Transistor  
4
3
2
1
SOT-223  
1. Base 2,4. Collector 3. Emitter  
Ordering Information  
Part Number  
FJT44TF  
Marking  
FJT44  
Package  
SOT-223 4L  
SOT-223 4L  
Packing Method, Size  
Tape and Reel, 4000 pcs  
Tape and Reel, 2500 pcs  
FJT44KTF  
FJT44  
Absolute Maximum Ratings(1),(2)  
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-  
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-  
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The  
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
500  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
400  
V
6
V
300  
mA  
°C  
°C  
TJ  
Junction Temperature  
150  
TSTG  
Storage Temperature Range  
-55 to +150  
Notes:  
1. These ratings are based on a maximum junction temperature of 150°C.  
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or  
low-duty-cycle operations.  
© 2002 Fairchild Semiconductor Corporation  
FJT44 Rev. 1.1.0  
www.fairchildsemi.com  
Thermal Characteristics(3)  
Values are at TA = 25°C unless otherwise noted.  
Symbol  
PD  
Parameter  
Max.  
2
Unit  
W
Power Dissipation, TC = 25°C  
Derate Above 25°C  
16  
mW/°C  
°C/W  
RθJA  
Thermal Resistance, Junction-to-Ambient  
62.5  
Note:  
3. Device is mounted on FR-4 PCB 36 mm × 18 mm × 1.5 mm; mounting pad for the collector lead minimum 6 cm2.  
Electrical Characteristics(4)  
Values are at TA = 25°C unless otherwise noted.  
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICBO  
Parameter  
Conditions  
Min.  
500  
400  
6
Typ.  
Max.  
Unit  
V
Collector-Base Breakdown Voltage  
IC = 100 μA, IE = 0  
Collector-Emitter Breakdown Voltage IC = 1 mA, IB = 0  
V
Emitter-Base Breakdown Voltage  
Collector-Base Cut-Off Current  
Collector-Emitter Cut-Off Current  
Emitter-Base Cut-Off Current  
IE = 100 μA, IC = 0  
V
VCB = 400 V, IE = 0  
100  
500  
100  
nA  
nA  
nA  
ICES  
VCE = 400 V, VBE = 0  
VEB = 4 V, IC = 0  
IEBO  
VCE = 10 V, IC = 1 mA  
VCE = 10 V, IC = 10 mA  
VCE = 10 V, IC = 50 mA  
VCE = 10 V, IC = 100 mA  
IC = 1 mA, IB = 0.1 mA  
40  
50  
45  
40  
200  
hFE  
DC Current Gain  
0.40  
0.50  
0.75  
0.75  
V
CE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1 mA  
V
IC = 50 mA, IB = 5 mA  
IC = 10 mA, IB = 1 mA  
VBE(sat) Base-Emitter Saturation Voltage  
Cobo Output Capacitance  
Note:  
V
VCB = 20 V, IE = 0,  
f = 1.0 MHz  
7
pF  
4. Pulse test: pulse width 300 μs, duty cycle 2.0%  
© 2002 Fairchild Semiconductor Corporation  
FJT44 Rev. 1.1.0  
www.fairchildsemi.com  
2
Typical Performance Characteristics  
160  
10  
VCE=10V  
VCC=150V  
IC/IB=10  
140  
TA=25oC  
VBE(off)=4V  
120  
100  
80  
60  
1
40  
20  
tf  
0
-20  
-40  
td  
0.1  
1
10  
100  
1
10  
100  
1000  
10000  
IC[mA], COLLECTOR CURRENT  
IC[mA], COLLECTOR CURRENT  
Figure 1. DC Current Gain  
Figure 2. Turn-On Switching Times  
100  
10  
1
1000  
VCC=150V  
IC/IB=10  
TA=25oC  
TA=25oC  
f=1MHz  
100  
Cib  
ts  
tf  
Cob  
10  
0.1  
1
0.1  
1
10  
100  
1
10  
100  
1000  
IC[mA], COLLECTOR CURRENT  
VCB[V], COLLECTOR-BASE VOLTAGE  
Figure 3. Turn-Off Switching Times  
Figure 4. Capacitance  
1.0  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
TA=25oC  
TA=25oC  
IC=1mA  
IC=10mA  
IC=50mA  
0.8  
0.6  
0.4  
0.2  
0.0  
VBE(sat) @IC/IB=10  
VBE(on) @VCE=10V  
VCE(sat)@IC/IB=10  
0.1  
1
10  
100  
1000  
10  
100  
1000  
10000  
100000  
IC[mA], COLLECTOR CURRENT  
IC[mA], COLLECTOR CURRENT  
Figure 5. On Voltage  
Figure 6. Collector Saturation Region  
© 2002 Fairchild Semiconductor Corporation  
FJT44 Rev. 1.1.0  
www.fairchildsemi.com  
3
Typical Performance Characteristics (Continued)  
100  
VCE=10V  
f=10MHz  
TA=25oC  
10  
1
0.1  
0.1  
1
10  
100  
1000  
IC[mA], COLLECTOR CURRENT  
Figure 7. High Frequency Current Gain  
© 2002 Fairchild Semiconductor Corporation  
FJT44 Rev. 1.1.0  
www.fairchildsemi.com  
4
6.70  
6.20  
B
0.10  
C B  
3.10  
2.90  
3.25  
4
1.90  
A
3.70  
3.30  
6.10  
1.90  
1
3
0.84  
0.60  
2.30  
2.30  
0.95  
4.60  
0.10  
C B  
LAND PATTERN RECOMMENDATION  
SEE DETAIL A  
1.80 MAX  
7.30  
6.70  
0.08  
C
C
0.10  
0.00  
NOTES: UNLESS OTHERWISE SPECIFIED  
A) DRAWING BASED ON JEDEC REGISTRATION  
TO-261C, VARIATION AA.  
B) ALL DIMENSIONS ARE IN MILLIMETERS.  
C) DIMENSIONS DO NOT INCLUDE BURRS  
OR MOLD FLASH. MOLD FLASH OR BURRS  
DOES NOT EXCEED 0.10MM.  
D) DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M-2009.  
R0.15±0.05  
R0.15±0.05  
10°  
5°  
GAGE  
PLANE  
0.35  
0.20  
E) LANDPATTERN NAME: SOT230P700X180-4BN  
F) DRAWING FILENAME: MKT-MA04AREV3  
10°  
0°  
TYP  
0.25  
10°  
5°  
0.60 MIN  
SEATING  
PLANE  
1.70  
DETAIL A  
SCALE: 2:1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  
literature is subject to all applicable copyright laws and is not for resale in any manner.  
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