FJT44TF [ONSEMI]
NPN 外延硅晶体管;型号: | FJT44TF |
厂家: | ONSEMI |
描述: | NPN 外延硅晶体管 开关 光电二极管 晶体管 |
文件: | 总7页 (文件大小:325K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
October 2014
FJT44
NPN Epitaxial Silicon Transistor
Features
• High-Voltage Transistor
4
3
2
1
SOT-223
1. Base 2,4. Collector 3. Emitter
Ordering Information
Part Number
FJT44TF
Marking
FJT44
Package
SOT-223 4L
SOT-223 4L
Packing Method, Size
Tape and Reel, 4000 pcs
Tape and Reel, 2500 pcs
FJT44KTF
FJT44
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
500
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
400
V
6
V
300
mA
°C
°C
TJ
Junction Temperature
150
TSTG
Storage Temperature Range
-55 to +150
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 2002 Fairchild Semiconductor Corporation
FJT44 Rev. 1.1.0
www.fairchildsemi.com
Thermal Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
Parameter
Max.
2
Unit
W
Power Dissipation, TC = 25°C
Derate Above 25°C
16
mW/°C
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
Note:
3. Device is mounted on FR-4 PCB 36 mm × 18 mm × 1.5 mm; mounting pad for the collector lead minimum 6 cm2.
Electrical Characteristics(4)
Values are at TA = 25°C unless otherwise noted.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Parameter
Conditions
Min.
500
400
6
Typ.
Max.
Unit
V
Collector-Base Breakdown Voltage
IC = 100 μA, IE = 0
Collector-Emitter Breakdown Voltage IC = 1 mA, IB = 0
V
Emitter-Base Breakdown Voltage
Collector-Base Cut-Off Current
Collector-Emitter Cut-Off Current
Emitter-Base Cut-Off Current
IE = 100 μA, IC = 0
V
VCB = 400 V, IE = 0
100
500
100
nA
nA
nA
ICES
VCE = 400 V, VBE = 0
VEB = 4 V, IC = 0
IEBO
VCE = 10 V, IC = 1 mA
VCE = 10 V, IC = 10 mA
VCE = 10 V, IC = 50 mA
VCE = 10 V, IC = 100 mA
IC = 1 mA, IB = 0.1 mA
40
50
45
40
200
hFE
DC Current Gain
0.40
0.50
0.75
0.75
V
CE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1 mA
V
IC = 50 mA, IB = 5 mA
IC = 10 mA, IB = 1 mA
VBE(sat) Base-Emitter Saturation Voltage
Cobo Output Capacitance
Note:
V
VCB = 20 V, IE = 0,
f = 1.0 MHz
7
pF
4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%
© 2002 Fairchild Semiconductor Corporation
FJT44 Rev. 1.1.0
www.fairchildsemi.com
2
Typical Performance Characteristics
160
10
VCE=10V
VCC=150V
IC/IB=10
140
TA=25oC
VBE(off)=4V
120
100
80
60
1
40
20
tf
0
-20
-40
td
0.1
1
10
100
1
10
100
1000
10000
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC Current Gain
Figure 2. Turn-On Switching Times
100
10
1
1000
VCC=150V
IC/IB=10
TA=25oC
TA=25oC
f=1MHz
100
Cib
ts
tf
Cob
10
0.1
1
0.1
1
10
100
1
10
100
1000
IC[mA], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Turn-Off Switching Times
Figure 4. Capacitance
1.0
0.5
0.4
0.3
0.2
0.1
0.0
TA=25oC
TA=25oC
IC=1mA
IC=10mA
IC=50mA
0.8
0.6
0.4
0.2
0.0
VBE(sat) @IC/IB=10
VBE(on) @VCE=10V
VCE(sat)@IC/IB=10
0.1
1
10
100
1000
10
100
1000
10000
100000
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 5. On Voltage
Figure 6. Collector Saturation Region
© 2002 Fairchild Semiconductor Corporation
FJT44 Rev. 1.1.0
www.fairchildsemi.com
3
Typical Performance Characteristics (Continued)
100
VCE=10V
f=10MHz
TA=25oC
10
1
0.1
0.1
1
10
100
1000
IC[mA], COLLECTOR CURRENT
Figure 7. High Frequency Current Gain
© 2002 Fairchild Semiconductor Corporation
FJT44 Rev. 1.1.0
www.fairchildsemi.com
4
6.70
6.20
B
0.10
C B
3.10
2.90
3.25
4
1.90
A
3.70
3.30
6.10
1.90
1
3
0.84
0.60
2.30
2.30
0.95
4.60
0.10
C B
LAND PATTERN RECOMMENDATION
SEE DETAIL A
1.80 MAX
7.30
6.70
0.08
C
C
0.10
0.00
NOTES: UNLESS OTHERWISE SPECIFIED
A) DRAWING BASED ON JEDEC REGISTRATION
TO-261C, VARIATION AA.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR BURRS
DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M-2009.
R0.15±0.05
R0.15±0.05
10°
5°
GAGE
PLANE
0.35
0.20
E) LANDPATTERN NAME: SOT230P700X180-4BN
F) DRAWING FILENAME: MKT-MA04AREV3
10°
0°
TYP
0.25
10°
5°
0.60 MIN
SEATING
PLANE
1.70
DETAIL A
SCALE: 2:1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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