FJV3114RMTF [ONSEMI]
带偏置电阻的 NPN 外延硅晶体管;
| 型号： | FJV3114RMTF |
| 厂家： | 
ONSEMI |
| 描述： | 带偏置电阻的 NPN 外延硅晶体管 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：319K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
June 2016
FJV3114R
NPN Epitaxial Silicon Transistor with Bias Resistor
Features
Description
• 100 mA Output Current Capability
• Built-in Bias Resistor (R1 = 4.7 k, R2 = 47 k)
Transistors with built-in resistors can be excellent
space- and cost-saving solutions by reducing compo-
nent count and simplifying circuit design.
Application
• Switching, Interface, and Driver Circuits
• Inverters
• Digital Applications in Industrial Segments
Equivalent Circuit
C
3
R1
B
2
R2
SOT-23
1. Base 2. Emitter 3. Collector
1
E
Ordering Information
Part Number
Top Mark
Package
Packing Method
Tape and Reel
FJV3114RMTF
R34
SOT-23 3L
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
50
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
50
V
10
V
100
mA
C
C
TJ
Junction Temperature
Storage Temperature
150
TSTG
-55 to 150
© 2002 Fairchild Semiconductor Corporation
FJV3114R Rev. 1.5
www.fairchildsemi.com
1
Thermal Characteristics(1)
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
Parameter
Value
200
Unit
mW
Power Dissipation
Derate Above TA = 25°C
1.60
625
mW/°C
C/W
RJA
Thermal Resistance, Junction to Ambient
Note:
1. FR-4 76 x 114 x 0.6T mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
BVCBO
BVCEO
ICBO
Parameter
Conditions
Min.
50
Typ.
Max.
Unit
V
Collector-Base Breakdown Voltage
IC = 10 A, IE = 0
Collector-Emitter Breakdown Voltage IC = 100 A, IB = 0
50
V
Collector Cut-Off Current
VCB = 40 V, IE = 0
0.1
0.3
A
hFE
DC Current Gain
VCE = 5 V, IC = 5 mA
IC = 10 mA, IB = 0.5 mA
VCE = 10 V, IC = 5 mA
68
VCE(sat)
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
V
fT
250
3.7
MHz
VCB = 10 V, IE = 0,
f = 1.0 MHz
Cob
Output Capacitance
pF
VI(off)
VI(on)
R1
Input-Off Voltage
Input-On Voltage
Input Resistor
VCE = 5 V, IC = 100 A
0.5
V
V
VCE = 0.2 V, IC = 5 mA
1.3
3.2
4.7
6.2
k
R1/R2
Resistor Ratio
0.09
0.10
0.11
© 2002 Fairchild Semiconductor Corporation
FJV3114R Rev. 1.5
www.fairchildsemi.com
2
Typical Performance Characteristics
1000
100
10
1000
VCE = 5V
R1 = 4.7K
R2 = 47K
IC = 10IB
R1 = 4.7K
R2 = 47K
100
1
10
1
10
100
1
10
100
1000
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC Current Gain
Figure 2. Collector-Emitter Saturation Voltage
10000
100
10
1
VCE=5V
VCE=0.2V
R1=4.7K
R1=4.7K
R2=47K
R2=47K
1000
TA = 125oC
TA = 125oC
TA = 75oC
100
TA = 75oC
TA = 25oC
10
1
TA = 25oC
TA = -40oC
TA = -40oC
1.2
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.4
1.6
0.1
1
10
100
Vi(off) - INPUT-OFF VOLTAGE [V]
Vi(on) - INPUT-ON VOLTAGE [V]
Figure 3. Input-On Voltage
Figure 4. Collector Current vs. Input Off Voltage
280
240
200
160
120
80
40
0
0
25
50
75
100
125
150
175
Ta[oC], AMBIENT TEMPERATURE
Figure 5. Power Derating
© 2002 Fairchild Semiconductor Corporation
FJV3114R Rev. 1.5
www.fairchildsemi.com
3
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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