FJX945GTF [ONSEMI]

NPN外延硅晶体管;
FJX945GTF
型号: FJX945GTF
厂家: ONSEMI    ONSEMI
描述:

NPN外延硅晶体管

放大器 光电二极管 晶体管
文件: 总6页 (文件大小:167K)
中文:  中文翻译
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FJX945  
Audio Frequency Amplifier  
High Frequency OSC.  
3
Collector-Base Voltage V  
=60V  
CBO  
High Current Gain Bandwidth Product f =300MHz (Typ)  
T
2
Complement to FJX733  
1
SOT-323  
1. Base 2. Emitter 3. Collector  
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
60  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
50  
V
CEO  
EBO  
5
V
I
150  
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
200  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
I =100µA, I =0  
Min.  
60  
50  
5
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
V
V
CBO  
CEO  
EBO  
C
E
BV  
BV  
I =10mA, I =0  
C B  
I =10µA, I =0  
V
E
C
I
I
V
=40V, I =0  
0.1  
0.1  
700  
0.3  
µA  
µA  
CBO  
EBO  
CB  
EB  
CE  
E
Emitter Cut-off Current  
V
V
=3V, I =0  
C
h
DC Current Gain  
=6V, I =1.0mA  
70  
FE  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
I =100mA, I =10mA  
0.15  
300  
2.5  
V
CE  
C
B
f
V
=6V, I =10mA  
MHz  
pF  
T
CE  
C
C
V
=6V, I =0  
E
ob  
CB  
f=1MHz  
NF  
Noise Figure  
V
=6V, I = -0.5mA  
4.0  
dB  
CE  
E
f=1KHz, R =500Ω  
S
h
Classification  
FE  
Classification  
O
Y
G
200 ~ 400  
L
h
70 ~ 140  
120 ~ 240  
350 ~ 700  
FE  
Marking  
SAX  
Grade  
©2004 Fairchild Semiconductor Corporation  
Rev. B2, April 2004  
Typical Characteristics  
100  
100  
10  
1
VCE = 6V  
IB = 400µA  
IB = 350µA  
80  
60  
40  
20  
0
IB = 300µA  
IB = 250  
IB = 200  
IB = 150  
µA  
µ
A
µ
A
IB = 100µA  
IB = 50µA  
0.1  
0.0  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
VBE[V], BASE-EMITTER VOLTAGE  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 1. Static Characteristic  
Figure 2. Transfer Characteristic  
1000  
100  
10  
10  
IC = 10 IB  
VCE = 6V  
1
VBE(sat)  
0.1  
VCE(sat)  
0.01  
1
10  
100  
1000  
1
10  
100  
1000  
IC[mA], COLLECTOR CURRENT  
IC[mA], COLLECTOR CURRENT  
Figure 3. DC current Gain  
Figure 4. Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
1000  
100  
10  
1
VCE = 6V  
IE = 0  
f = 1MHz  
100  
10  
1
0.1  
0.1  
1
10  
100  
1
10  
100  
1000  
VCB [V], COLLECTOR-BASE VOLTAGE  
IC[mA], COLLECTOR CURRENT  
Figure 5. Collector Output Capacitance  
Figure 6. Current Gain Bandwidth Product  
©2004 Fairchild Semiconductor Corporation  
Rev. B2, April 2004  
Package Dimensions  
SOT-323  
2.00±0.20  
3°  
1.25±0.10  
2.10±0.10  
0.90  
±0.10  
0.95±0.15  
+0.05  
–0.02  
0.05  
1.30±0.10  
1.00±0.10  
0.275±0.100  
3°  
+0.04  
–0.01  
0.135  
0.10 Min  
Dimensions in Millimeters  
©2004 Fairchild Semiconductor Corporation  
Rev. B2, April 2004  
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PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
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This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2004 Fairchild Semiconductor Corporation  
Rev. I10  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  
literature is subject to all applicable copyright laws and is not for resale in any manner.  
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