FJY4006R [ONSEMI]
带偏置电阻的 PNP 外延硅晶体管;
| 型号： | FJY4006R |
| 厂家： | 
ONSEMI |
| 描述： | 带偏置电阻的 PNP 外延硅晶体管 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：342K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
July 2007
FJY4006R
tm
PNP Epitaxial Silicon Transistor
Features
•
•
•
Switching circuit, Inverter, Interface circuit, Driver Circuit
Built in bias Resistor (R1=10KΩ, R2=47KΩ)
Complement to FJY3006R
Equivalent Circuit
C
C
S56
E
B
E
B
SOT - 523F
Absolute Maximum Ratings *
T = 25°C unless otherwise noted
a
Symbol
Parameter
Value
-50
Units
V
V
V
V
Collector-Base Voltage
CBO
CEO
EBO
Collector-Emitter Voltage
Emitter-Base Voltage
-50
V
-10
V
I
Collector Current
-100
-55~150
150
mA
°C
C
TSTG
TJ
Storage Temperature Range
Junction Temperature
°C
P
Collector Power Dissipation, by RθJA
200
mW
C
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics* T =25°C unless otherwise noted
a
Symbol
Parameter
Max
Units
RθJA
Thermal Resistance, Junction to Ambient
600
°C/W
* Minimum land pad size.
Electrical Characteristics*
T = 25°C unless otherwise noted
C
Symbol
V(BR)CBO
V(BR)CEO
ICBO
Parameter
Test Condition
MIN
-50
Typ MAX
Units
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Cutoff Current
DC Current Gain
IC = -10 uA, IE = 0
V
V
IC = -100 uA, IB = 0
-50
VCB = -40 V, IE = 0
-0.1
-0.3
uA
hFE
VCE = -5 V, IC = -5mA
IC = -10 mA, IB = -0.5 mA
VCE = -10V, IC = -5 mA
VCB = -10 V, IE = 0, f = 1.0 MHz
VCE = -5 V, IC = -100uA
VCE = -0.3V, IC = -1mA
68
VCE(sat)
fT
Collector-Emitter Saturation Voltage
Current Gain - Bandwidth Product
Output Capacitance
V
MHz
pF
V
200
5.5
Ccb
VI(off)
Input Off Voltage
-0.3
VI(on)
R1
Input On Voltage
-1.4
13
V
Input Resistor
7
10
KΩ
R1/R2
Resistor Ratio
0.19
0.21
0.24
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FJY4006R Rev. B
Typical Performance Characteristics
Figure 1. DC current Gain
Figure 2. Input On Voltage
-100
1000
VCE = - 5V
R1 = 10K
R2 = 47K
VCE =- 0.3V
R1 = 10K
R2 = 47K
-10
100
10
1
-1
-0.1
-0.1
-1
-10
-100
-0.1
-1
-10
-100
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 3. Input off Voltage
Figure 4. Power Derating
280
240
200
160
120
80
-10k
VCE = - 5V
R1 = 10K
R2 = 47K
-1k
-100
-10
-1
40
0
0
25
50
75
100
125
150
175
-0.1
-0.3
-0.5
-0.7
-0.9
-1.1
-1.3
-1.5
-1.7
-1.9
-2.1
Ta[oC], AMBIENT TEMPERATURE
VI(off)[V], INPUT OFF VOLTAGE
2
www.fairchildsemi.com
FJY4006R Rev. B
Package Dimensions
SOT-523F
Dimensions in Millimeters
3
www.fairchildsemi.com
FJY4006R Rev. B
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
First Production
Full Production
Not In Production
This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
No Identification Needed
Obsolete
This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to improve
design.
This datasheet contains specifications on a product that has been
discontinued by Fairchild Semiconductor. The datasheet is printed for
reference information only.
Rev. I25
© 2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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