FMB200 [ONSEMI]
PNP 多芯片通用放大器;
| 型号： | FMB200 |
| 厂家： | 
ONSEMI |
| 描述： | PNP 多芯片通用放大器 放大器 光电二极管 晶体管 |
| 文件： | 总9页 (文件大小：356K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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January 2014
FMB200
PNP Multi-Chip General-Purpose Amplifier
Description
This device is designed for general-purpose amplifier
applications at collector currents to 300 mA. Sourced
from Process 68.
Block Diagram
C2
E1
C2
E1
C1
B2
E2
B1
C1
B2
E2
B1
pin #1
SuperSOT™-6
Mark: .N2
Dot denotes pin #1
Figure 1. Device Package
Figure 2. Internal Connections
Ordering Information
Part Number
Marking
Package
SSOT 6L
Packing Method
Tape and Reel
FMB200
.N2
© 1998 Fairchild Semiconductor Corporation
FMB200 Rev. 1.1.0
www.fairchildsemi.com
1
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCEO
VCBO
VEBO
IC
Parameter
Value
-45
Unit
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
-60
V
-6
V
Collector Current - Continuous
-500
mA
°C
TJ, TSTG Operating and Storage Junction Temperature Range
-55 to +150
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty cycle operations.
Thermal Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Max.
700
5.6
Unit
mW
Total Device Dissipation
PD
Derate Above 25°C
mW/°C
°C/W
RθJA
Thermal Resistance, Junction to Ambient
180
Note:
3. PCB size: FR-4 76 x 114 x 1.57 mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
© 1998 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FMB200 Rev. 1.1.0
2
Electrical Characteristics(4)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
IC = -10 μA, IB = 0
Min. Typ. Max. Unit
BVCBO Collector-Base Breakdown Voltage
-60
-45
-6.0
V
Collector-Emitter Breakdown
BVCEO
IC = -1.0 mA, IE = 0
V
Voltage(4)
BVEBO Emitter-Base Breakdown Voltage
IE = -10 μA, IC = 0
V
ICBO
ICES
IEBO
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
VCB = -50 V, IE = 0
-50
-50
-50
nA
nA
nA
VCE = -40 V, IE = 0
VEB = -4.0 V, IC = 0
IC = -100 μA, VCE = -1.0 V
IC = -10 mA, VCE = -1.0 V
IC = -150 mA, VCE = -5.0 V(4)
IC = -10 mA, IB = -1.0 mA
IC = -200 mA, IB = -20 mA(4)
IC = -10 mA, IB = -1.0 mA
IC = -200 mA, IB = -20 mA(4)
VCE = -20 V, IC = -20 mA
VCB = -10 V, f = 1.0 MHz
80
hFE
DC Current Gain
100
100
450
350
-0.2
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
V
V
-0.4
-0.85
-1.00
fT
Current Gain - Bandwidth Product
Output Capacitance
300
4.5
MHz
pF
Cob
IC = -100 μA, VCE = -5.0 V,
RG = 2.0 kΩ, f = 1.0 kHz
NF
Noise Figure
2.5
dB
Note:
4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
© 1998 Fairchild Semiconductor Corporation
FMB200 Rev. 1.1.0
www.fairchildsemi.com
3
Typical Performance Characteristics
0.3
0.25
0.2
500
V
= 5V
CE
β = 10
125 °C
400
300
200
100
0
0.15
0.1
25 °C
25 °C
- 40 °C
0.05
0
125 °C
- 40 °C
100
0.1
1
10
300
0.01
0.1
1
10
100
IC - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Figure 4. Collector-Emitter Saturation Voltage vs.
Collector Current
Figure 3. Typical Pulsed Current Gain vs.
Collector Current
1.2
1
β = 10
1
0.8
0.6
0.4
0.2
0
- 40°C
25 °C
- 40 °C
0.8
0.6
0.4
0.2
0
125 °C
25 °C
125 °C
V
= 5V
CE
0.1
1
10
100
300
0.1
1
10
100 200
I C - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Figure 6. Base-Emitter On Voltage vs.
Collector Current
Figure 5. Base-Emitter Saturation Voltage vs.
Collector Current
100
95
90
85
80
75
70
V
= 50V
CB
10
1
0.1
0.01
0.1
1
10
100
1000
25
50
75
100
125
RESISTANCE (k
)
Ω
TA - AMBIE NT TEMP ERATURE ( C)
°
Figure 8. Collector-Emitter Breakdown Voltage with
Resistance Between Emitter-Base
Figure 7. Collector Cut-Off Current vs.
Ambient Temperature
© 1998 Fairchild Semiconductor Corporation
FMB200 Rev. 1.1.0
www.fairchildsemi.com
4
Typical Performance Characteristics (Continuous)
100
f = 1.0 MHz
4
Ta = 25°C
3
10
Ic =
100 uA
300 mA
50 mA
2
1
0
Cib
Cob
0.1
1
10
100
V - COLLECTOR VOLTAGE (V)
CE
100
300
700
2000 4000
I
- BASE CURRENT (uA)
B
Figure 10. Input and Output Capacitance vs.
Reverse Voltage
Figure 9. Collector Saturation Region
40
30
20
10
0
300
V
= 5V
ce
270
240
210
180
150
120
90
60
30
0
t
s
IB1 = IB2 = Ic / 10
V
= 10 V
cc
t
f
t
r
t
d
10
20
30
50
100
200 300
1
10
20
50
100 150
IC - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Figure 12. Switching Times vs. Collector Current
Figure 11. Gain Bandwidth Product vs.
Collector Current
1
SOT-6
0.75
0.5
0.25
0
0
25
50
75
100
125
150
TEMPERATURE (oC)
Figure 13. Power Dissipation vs.
Ambient Temperature
© 1998 Fairchild Semiconductor Corporation
FMB200 Rev. 1.1.0
www.fairchildsemi.com
5
Physical Dimensions
SSOT
Figure 14. 6 LEAD, SUPERSOT6, JEDEC MO-193, 1.6 MM WIDE
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/MA/MA06A.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-MA06A.pdf.
© 1998 Fairchild Semiconductor Corporation
FMB200 Rev. 1.1.0
www.fairchildsemi.com
6
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intended to be an exhaustive list of all such trademarks.
Sync-Lock™
AccuPowerA
AX-CAP®*
F-PFSA
FRFET®
®
®*
Global Power ResourceSM
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Green FPSA
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GmaxA
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QFET®
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Build it NowA
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CROSSVOLTA
CTLA
QSA
GTOA
IntelliMAXA
Quiet SeriesA
RapidConfigureA
A
Current Transfer LogicA
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficientMaxA
ISOPLANARA
Making Small Speakers Sound Louder
and Better™
Saving our world, 1mW/W/kW at a time™
SignalWiseA
SmartMaxA
MegaBuckA
TriFault DetectA
TRUECURRENT®*
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Solutions for Your SuccessA
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®
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mWSaver®
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FAST®
SuperSOTA-6
OptoHiTA
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Rev. I66
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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