FMBA06 [ONSEMI]
NPN 多芯片通用放大器;型号: | FMBA06 |
厂家: | ONSEMI |
描述: | NPN 多芯片通用放大器 放大器 光电二极管 晶体管 |
文件: | 总7页 (文件大小:172K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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FMBA06
C2
E1
C1
B2
E2
B1
pin #1
SuperSOT -6
Mark: .1G
Dot denotes pin #1
NPN Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector
currents to 300 mA. Sourced from Process 33.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
80
80
V
V
4.0
V
4
Collector Current - Continuous
500
mA
Operating and Storage Junction Temperature Range
-55 to +150
C
°
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
FMBA06
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
700
5.6
180
mW
mW/°C
°C/W
RθJA
1998 Fairchild Semiconductor Corporation
NPN Multi-Chip General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)EBO
ICEO
Collector-Emitter Sustaining Voltage* IC = 1.0 mA, IB = 0
80
V
V
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
4.0
IE = 100 µA, IC = 0
VCE = 60 V, IB = 0
VCB = 80 V, IE = 0
0.1
0.1
µ
A
ICBO
Collector-Cutoff Current
µ
A
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 10 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
IC = 100 mA, IB = 10 mA
100
100
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
0.25
1.2
V
VCE(sat)
VBE(on)
IC = 100 mA, VCE = 1.0 V
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 2.0 V,
f = 100 MHz
100
MHz
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
NPN (Is=8.324f Xti=3 Eg=1.11 Vaf=100 Bf=12.16K Ne=1.368 Ise=73.27f Ikf=.1096 Xtb=1.5 Br=11.1 Nc=2 Isc=0
Ikr=0 Rc=.25 Cjc=18.36p Mjc=.3843 Vjc=.75 Fc=.5 Cje=55.61p Mje=.3834 Vje=.75 Tr=72.15n Tf=516.1p Itf=.5
Vtf=4 Xtf=6 Rb=10)
Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
Typical Pulsed Current Gain
vs Collector Current
0.5
0.4
0.3
0.2
0.1
0
200
150
100
50
β = 10
VCE = 1V
125 °C
125 °C
25 °C
25 °C
- 40 °C
- 40 °C
0.1
1
10
100
100 0
0.001
0.01
0.1
IC - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (A)
NPN Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Base-Emitter Saturation
Voltage vs Collector Current
Base Emitter ON Voltage vs
Collector Current
β = 10
1
1
- 40 °C
0.8
- 40 °C
0.8
25 °C
25 °C
0.6
125 °C
125 °C
0.6
0.4
V
= 5V
CE
0.2
0
0.4
0.1
1
10
100
1000
1
10
100
1000
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs Ambient Temperature
Collector Saturation Region
2
1.5
1
T
= 25°C
A
10
1
V
= 80 V
CB
0.1
I
=
100 mA
1 mA
10 mA
C
0.5
0
0.01
0.001
4
25
50
75
100
125
4000
10000
20000
30000
50000
TA - AMBIENT TEMPERATURE ( C)
°
I
- BASE CURRENT (uA)
B
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
Input and Output Capacitance
vs Reverse Voltage
100
10
1
f = 1.0 MHz
117
116
115
114
113
112
111
C
ib
C
ob
0.1
0.1
1
10
100
0.1
1
10
100
1000
V
- COLLECTOR VOLTAGE (V)
CE
RESISTANCE (k
)
Ω
NPN Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Gain Bandwidth Product
Power Dissipation vs
vs Collector Current
Ambient Temperature
400
1
V
= 5V
CE
350
300
250
200
150
100
SOT-6
0.75
0.5
0.25
0
1
10
20
50
100
0
25
50
75
100
125
150
I C - COLLECTOR CURRENT (mA)
TEMPERATURE (oC)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
PowerTrench
QFET™
QS™
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FASTr™
GlobalOptoisolator™
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Bottomless™
CoolFET™
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DOME™
QT Optoelectronics™
VCX™
HiSeC™
Quiet Series™
SILENT SWITCHER
SMART START™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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