FMBM5551 [ONSEMI]
NPN通用放大器;
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FMBM5551
NPN General-Purpose Amplifier
Features
• This device has matched dies
• Sourced from process 16
• See MMBT5551 for characteristics
C2
C2
E1
C1
B2
E2
B1
E1
C1
B2
E2
B1
pin #1
SuperSOTTM-6
Mark: .3S2
Dot denotes pin #1
Figure 1. Device Package
Figure 2. Internal Connection
Ordering Information
Part Number
Top Mark
Package
SSOT 6L
Packing Method
FMBM5551
3S2
Tape and Reel
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCEO
VCBO
VEBO
IC
Parameter
Value
160
Unit
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Junction Temperature
180
V
6
V
600
mA
°C
°C
TJ
150
TSTG
Storage Temperature Range
-55 to 150
© 2005 Semiconductor Components Industries, LLC.
October-2017,Rev. 2
Publication Order Number:
FMBM5551/D
Thermal Characteristics(1), (2)
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
Parameter
Value
0.7
Unit
W
Power Dissipation (TC = 25°C)
Derate Above 25°C
5.6
mW/°C
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
180
Notes:
1. PD total, for both transistors. For each transistor, PD = 350 mW.
2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
160
180
6
Max.
Unit
V
BVCEO Collector-Emitter Breakdown Voltage IC = 1 mA, IB = 0
BVCBO Collector-Base Breakdown Voltage
BVEBO Emitter-Base Breakdown Voltage
IC = 100 μA, IE = 0
IE = 10 μA, IC = 0
V
V
V
CB = 120 V, IE = 0
50
50
50
nA
μA
nA
ICBO
Collector Cut-Off Current
VCB = 120 V, IE = 0, TA = 100°C
VEB = 4 V, IC = 0
IEBO
hFE1
Emitter Cut-Off Current
DC Current Gain
VCE = 5 V, IC = 1 mA
80
0.9
80
Variation Ratio of hFE1
Between Die 1 and Die 2
DIVID1
hFE2
hFE1(Die1) / hFE1(Die2)
VCE = 5 V, IC = 10 mA
1.1
250
1.05
DC Current Gain
Variation Ratio of hFE2
Between Die 1 and Die 2
DIVID2
hFE3
h
FE2(Die1) / hFE2(Die2)
VCE = 5 V, IC = 50 mA
FE3(Die1) / hFE3(Die2)
0.95
30
DC Current Gain
Variation Ratio of hFE3
Between Die 1 and Die 2
DIVID3
h
0.9
1.1
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
VCE = 5 V, IC = 10 mA
0.15
0.20
1
VCE(sat) Collector-Emitter Saturation Voltage
V
V
VBE(sat) Base-Emitter Saturation Voltage
VBE(on) Base-Emitter On Voltage
1
1
V
Difference of VBE(on)
DEL
VBE(on)(Die1) - VBE(on)(Die2)
-8
8
mV
Between Die1 and Die 2
Cob
Cib
Output Capacitance
Input Capacitance
VCB = 10 V, IE = 0, f = 1 MHz
VEB = 0.5 V, IC = 0, f = 1 MHz
6
pF
pF
20
VCE = 10 V, IC = 10 mA,
f = 100 MHz
fT
Current Gain Bandwidth Product
100
300
MHz
V
CE = 5 V, IC = 200 μA,
NF
hfe
Noise Figure
f = 1 MHz, RS = 20 kΩ,
B = 200 Hz
8
dB
VCE = 10 V, IC = 1.0 mA,
f = 10 kHz
Small Signal Current Gain
50
250
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2
Typical Performance Characteristics
vs Collector Current
250
0.5
0.4
0.3
0.2
0.1
0
125 °C
200
β = 10
150
25 °C
25 °C
100
- 40 °C
125 °C
VCE = 5V
50
- 40 °C
0
F
E
0.1 0.2
0.5
1
2
5
10 20
50 100
1
10
100
200
IC - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Figure 4. Collector-Emitter Saturation Voltage
vs. Collector Current
Figure 3. Typical Pulsed Current Gain
vs. Collector Current
ll
Collector Current
1
β = 10
- 40 °C
1
0.8
0.6
0.4
0.2
0
0.8
25 °C
- 40 °C
125
°C
25 °C
0.6
125 °C
0.4
V
= 5V
CE
0.2
0
1
10
- COLLECTOR CURRENT (mA)
100
200
0.1
1
10
100 200
I
IC - COLLECTOR CURRENT (mA)
Figure 6. Base-Emitter On Voltage
vs. Collector Current
Figure 5. Base-Emitter Saturation Voltage
vs. Collector Current
Between Emitter-Base
50
260
240
220
200
180
160
VCB= 100V
I
= 1.0 mA
C
10
C
B
O
1
25
50
75
100
°
125
0.1
1
10
100
1000
TA - AMBIENT TEMPERATURE ( C)
RESISTANCE (k
Ω
)
Figure 8. Collector-Emitter Breakdown Voltage
with Resistance Between Emitter-Base
Figure 7. Collector Cut-Off Current
vs. Ambient Temperature
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3
Typical Performance Characteristics (Continued)
l
30
16
12
8
FREG = 20 MHz
VCE = 10V
f = 1.0 MHz
25
20
15
C
ib
10
5
4
C
cb
0
0.1
0
1
10
100
1
10
I C - COLLECTOR CURRENT (mA)
50
V
- COLLECTOR VOLTAGE (V)
CE
Figure 10. Small Signal Current Gain
vs. Collector Current
Figure 9. Input and Output Capacitance
vs. Reverse Voltage
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4
Physical Dimensions
Figure 11. 6-LEAD, SUPERSOT6, JEDEC MO-193, 1.6 MM WIDE
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5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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