FNA51560TD3 [ONSEMI]
Motion SPM® 55 系列;
| 型号： | FNA51560TD3 |
| 厂家： | 
ONSEMI |
| 描述： | Motion SPM® 55 系列 电动机控制 |
| 文件： | 总17页 (文件大小：707K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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April 2017
FNA51560TD3
®
Motion SPM 55 Series
Features
General Description
• UL Certified No. E209204 (UL1557)
FNA51560TD3 is a Motion SPM 55 module providing a
fully-featured, high-performance inverter output stage for
AC Induction, BLDC, and PMSM motors. These modules
integrate optimized gate drive of the built-in IGBTs to
minimize EMI and losses, while also providing multiple
on-module protection features including under-voltage
lockouts, inter-lock function, over-current shutdown,
thermal monitoring of drive IC, and fault reporting. The
built-in, high-speed HVIC requires only a single supply
voltage and translates the incoming logic-level gate
inputs to the high-voltage, high-current drive signals
required to properly drive the module's robust short-
circuit-rated IGBTs. Separate negative IGBT terminals
are available for each phase to support the widest
variety of control algorithms.
• 600 V - 15 A 3-Phase IGBT Inverter Including Control
IC for Gate Drive and Protections
• Low-Loss, Short-Circuit Rated IGBTs
• Built-In Bootstrap Diodes in HVIC
• Separate Open-Emitter Pins from Low-Side IGBTs for
Three-Phase Current Sensing
• Active-HIGH interface, works with 3.3 / 5 V Logic,
Schmitt-trigger Input
• HVIC for Gate Driving, Under-Voltage and Short-Cir-
cuit Current Protection
• Fault Output for Under-Voltage and Short-Circuit Cur-
rent Protection
• Inter-Lock Function to Prevent Short-Circuit
• Shut-Down Input
• HVIC Temperature-Sensing Built-In for Temperature
Monitoring
• Optimized for 5 kHz Switching Frequency
• Isolation Rating: 1500 Vrms / min.
Applications
• Motion Control - Home Appliance / Industrial Motor
Related Resources
• AN-9096 - Smart Power Module, Motion SPM® 55
Series User’s Guide
• AN-9097 - SPM® 55 Packing Mounting Guidance
Figure 1. 3D Package Drawing
(Click to Activate 3D Content)
Package Marking and Ordering Information
Device
Device Marking
Package
Packing Type
Quantity
FNA51560TD3
FNA51560TD3
SPMFA-B20
RAIL
13
©2015 Semiconductor
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Integrated Power Functions
•
600 V - 15 A IGBT inverter for three phase DC / AC power conversion (Please refer to Figure 3)
Integrated Drive, Protection and System Control Functions
•
For inverter high-side IGBTs: gate drive circuit, high-voltage isolated high-speed level shifting
control circuit Under-Voltage Lock-Out (UVLO) protection
•
For inverter low-side IGBTs: gate drive circuit, Short-Circuit Protection (SCP)
control supply circuit Under-Voltage Lock-Out (UVLO) protection
•
•
•
Fault signaling: corresponding to UVLO (low-side supply) and SC faults
Input interface: High-active interface, works with 3.3 / 5 V logic, Schmitt trigger input
Built in Bootstrap circuitry in HVIC
Pin Configuration
Figure 2. Top View
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Pin Descriptions
Pin Number
Pin Name
Pin Description
1
2
P
U, VS(U)
V, VS(V)
W, VS(W)
NU
Positive DC-Link Input
Output for U Phase
3
Output for V Phase
4
Output for W Phase
5
Negative DC-Link Input for U Phase
Negative DC-Link Input for V Phase
Negative DC-Link Input for W Phase
Signal Input for Low-Side U Phase
Signal Input for High- ide U Phase
Signal Input for Low-Side V Phase
Signal Input for High-Side V Phase
Signal Input for Low-Side W Phase
Signal Input for High-Side W Phase
6
NV
7
NW
8
IN(UL)
IN(UH)
IN(VL)
IN(VH)
IN(WL)
IN(WH)
VDD
9
10
11
12
13
14
15
16
17
18
19
20
Common Bias Voltage for IC and IGBTs Driving
Common Supply Ground
COM
CSC
Capacitor (Low-Pass Filter) for Short-circuit Current Detection Input
Fault Output, Shut-Down Input, Temperature Output of Drive IC
High-Side Bias Voltage for W-Phase IGBT Driving
High-Side Bias Voltage for V-Phase IGBT Driving
High-Side Bias Voltage for U-Phase IGBT Driving
VF
VB(W)
VB(V)
VB(U)
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Internal Equivalent Circuit and Input/Output Pins
P
U,Vs(U)
Nu
VB(U)
VB
HO
VS
LO
IN(UH)
IN(UL)
HIN
LIN
VB(V)
VB
HO
VS
LO
IN(VH)
HIN
LIN
IN(VL)
V,Vs(V)
Nv
VB(W)
VB
IN(WH)
IN(WL)
HIN
LIN
HO
VS
LO
VF
U,Vs(W)
VF
Csc
VDD
Csc
VDD
COM
COM
Nw
Figure 3. Internal Block Diagram
Note:
1. Inverter high-side is composed of three IGBTs, freewheeling diodes, and one control IC for each IGBT.
2. Inverter low-side is composed of three IGBTs, freewheeling diodes, and one control IC for each IGBT. It has gate drive and protection functions.
3. Single drive IC has gate driver for six IGBTs and protection functions.
4. Inverter power side is composed of four inverter DC-link input terminals and three inverter output terminals.
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Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified.)
Inverter Part
Symbol
VPN
Parameter
Conditions
Applied between P - NU, NV, NW
Applied between P - NU, NV, NW
Rating
450
Unit
Supply Voltage
V
V
V
A
A
VPN(Surge)
VCES
Supply Voltage (Surge)
500
Collector - Emitter Voltage
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
600
*± IC
TC = 25°C, TJ ＜ 150°C
15
*± ICP
TC = 25°C, TJ ＜ 150°C, Under 1 ms Pulse
30
Width
*PC
TJ
Collector Dissipation
TC = 25°C per Chip
(Note 5)
27
W
Operating Junction Temperature
-40 ~ 150
°C
Note:
®
5. The maximum junction temperature rating of the power chips integrated within the Motion SPM 55 product is 150C.
Control Part
Symbol
VDD
Parameter
Conditions
Rating
20
Unit
Control Supply Voltage
Applied between VDD - COM
V
V
VBS
High-Side Control Bias Voltage
Applied between VB(U) - VS(U), VB(V) - VS(V)
,
20
V
B(W) - VS(W)
VIN
Input Signal Voltage
Applied between IN(UH)
,
IN(VH)
,
IN(WH)
,
-0.3 ~ VDD +0.3
V
IN(UL), IN(VL), IN(WL) - COM
Applied between VF - COM
Sink Current at VF pin
VF
*IF
Fault Supply Voltage
Fault Current
-0.3 ~ VDD +0.3
5
V
mA
V
VSC
Current Sensing Input Voltage
Applied between CSC - COM
-0.3 ~ VDD +0.3
Total System
Symbol
Parameter
Conditions
Rating
Unit
VPN(PROT) Self Protection Supply Voltage Limit
(Short Circuit Protection Capability)
VDD = VBS = 13.5 ~ 16.5 V
TJ = 150°C, Non-Repetitive, < 2 s
400
V
TSTG
VISO
Storage Temperature
-40 ~ 125
1500
°C
Isolation Voltage
AC 60 Hz, Sinusoidal, 1 Minute
Vrms
Connect Pins to Heat Sink Plate
Thermal Resistance
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
Rth(j-c)Q
Rth(j-c)F
Junction to Case Thermal Resistance
(Note 7)
Inverter IGBT part (per 1 / 6 module)
Inverter FWD part (per 1 / 6 module)
-
-
-
-
4.55
5.4
°C / W
°C / W
Note:
6. For Marking “ * “, These Value had been made an acquisition by the calculation considered to design factor.
7. For the measurement point of case temperature (T ), please refer to Figure 2.
C
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Electrical Characteristics (TJ = 25°C, unless otherwise specified.)
Inverter Part
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
VCE(SAT)
Collector - Emitter Saturation VDD = VBS = 15 V
TJ = 25°C
-
1.45
1.85
V
Voltage
V
IN = 5 V
I
C = 15 A
TJ = 150°C
TJ = 25°C
TJ = 150°C
-
1.65
1.7
-
V
V
VF
FWDi Forward Voltage
Switching Times
VIN = 0 V
IF = 15 A
-
2.1
-
-
1.7
V
HS
tON
tC(ON)
tOFF
tC(OFF)
trr
VPN = 400 V, VDD = VBS = 15 V, IC = 15A
TJ = 25°C
0.55
0.80
0.15
0.55
0.15
0.08
0.80
0.25
0.55
0.15
0.08
-
1.05
0.35
0.85
0.30
-
us
us
us
us
us
us
us
us
us
us
mA
-
V
IN = 0 V 5 V, Inductive load
-
(Note 8)
-
-
LS
tON
VPN = 400 V, VDD = VBS = 15 V, IC = 15A
TJ = 25°C
0.55
1.05
0.45
0.85
0.30
-
tC(ON)
tOFF
tC(OFF)
trr
-
-
-
-
-
V
IN = 0 V 5 V, Inductive load
(Note 8)
ICES
Collector - Emitter Leakage VCE = VCES
Current
1
Note:
8.
t
and t
include the propagation delay of the internal drive IC. t
and t
are the switching time of IGBT itself under the given gate driving condition internally. For
C(OFF)
ON
OFF
C(ON)
the detailed information, please see Figure 4.
100% IC 100% IC
trr
VCE
IC
IC
VCE
VIN
VIN
tON
tOFF
tC(ON)
tC(OFF)
10% IC
VIN(ON)
VIN(OFF)
10% VCE
10% IC
90% IC 10% VCE
(b) turn-off
(a) turn-on
Figure 4. Switching Time Definition
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Control Part
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
IQDD
Quiescent VDD Supply VDD = 15 V,
Current IN(UH,VH,WH,UL,VL,WL) = 0 V
VDD - COM
-
1.5
2.0
mA
IPDD
Operating VDD Supply VDD = 15 V, fPWM = 20 kHz, duty = VDD - COM
-
2.0
2.5
mA
Current
50%, applied to one PWM signal
input
IQBS
IPBS
Quiescent VBS Supply VBS = 15 V, IN(UH, VH, WH) = 0 V
Current
VB(U) - VS(U), VB(V)
-
-
-
-
30
60
A
A
V
S(V), VB(W) - VS(W)
Operating VBS Supply VDD = VBS = 15 V, fPWM = 20 kHz, VB(U) - VS(U), VB(V)
500
650
Current
duty = 50%, applied to one PWM VS(V), VB(W) - VS(W)
signal input for high - side
VFH
VFL
Fault Output Voltage
VSC = 0 V, VF Circuit: 10 k to 5 V Pull-up
VSC = 1 V, VF Circuit: 10 k to 5 V Pull-up
4.5
-
-
-
V
V
-
0.5
VSC(ref) Short-Circuit Trip Level VDD = 15 V (Note 4)
0.45
10.7
11.2
10.1
10.7
68
0.5
11.4
12.3
10.8
11.4
81
0.55
12.1
13.0
11.5
12.1
95
V
UVDDD
UVDDR
UVBSD
UVBSR
IFT
Detection level
V
Supply Circuit
Under-Voltage
Protection
Reset level
V
Detection level
V
Reset level
V
HVIC Temperature
Sensing Current
VDD = VBS = 15 V, THVIC = 25°C
A
VFT
HVIC Temperature
Sensing Voltage
VDD = VBS = 15 V, THVIC = 25°C, 10 k to 5 V Pull-up
(Figure. 5)
4.05
4.19
4.32
V
tFOD
Fault-Out Pulse Width
40
-
120
-
2.4
-
s
V
VFSDR
VFSDD
Shut-down Reset level Applied between VF - COM
-
-
Shut-down Detection
level
0.8
V
VIN(ON) ON Threshold Voltage Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL)
,
-
-
-
2.4
-
V
V
IN(WL) - COM
VIN(OFF) OFF Threshold Voltage
0.8
Note:
9. Short-circuit protection is functioning for all six IGBTs.
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0
25
50
75
100
125
O
THVIC [ C]
Figure. 5. V-T Curve of Temperature Output of IC (5V pull-up with 10kohm)
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Bootstrap Diode Part
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
RBS
Bootstrap Diode
Resitance
VDD = 15V, TC = 25°C
-
280
-
0.06
0.05
0.04
0.03
0.02
0.01
0.00
TJ=25 oC, VDD=15V
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
VF [V]
Figure 6. Built-In Bootstrap Diode Charaterstics
Recommended Operating Conditions
Symbol
VPN
Parameter
Conditions
Applied between P - NU, NV, NW
Applied between VDD - COM
Min. Typ. Max. Unit
Supply Voltage
-
300
15
400
16.5
18.5
V
V
V
VDD
Control Supply Voltage
High - Side Bias Voltage
14.0
13.0
VBS
Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W)
VS(W)
-
15
dVDD / dt, Control Supply Variation
dVBS / dt
-1
-
-
-
1
-
V / s
s
tdead
Blanking Time for
For each input signal
1.5
Preventing Arm - Short
fPWM
VSEN
PWM Input Signal
- 40C ＜TJ ＜150°C
-
20
4
kHz
V
Voltage for Current
Sensing
Applied between NU, NV, NW - COM
(Including surge voltage)
-4
PWIN(ON) Minimun Input Pulse
(Note 9)
0.7
0.7
-
-
-
-
s
Width
PWIN(OFF)
Note:
10. This product might not make response if input pulse width is less than the recommanded value.
5 V Line (M C U or C ontrol pow er)
R P F
= 10kΩ
S P M
,
,
IN (U H ) IN (V H )
IN(W H )
,
,
IN (U L) IN (V L)
IN(W L)
M C U
V
F
C O M
Note:
11. RC coupling at each input (parts shown dotted) might change depending on the PWM control scheme used in the application and the wiring impedance of the application’s
printed circuit board. The input signal section of the SPM 55 product integrates 10 k(typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay
attention to the signal voltage drop at input terminal.
Figure 7. Recommended MCU I/O Interface Circuit
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Mechanical Characteristics and Ratings
Parameter
Conditions
Min.
-50
0.6
5.9
-
Typ.
-
Max.
100
0.8
7.9
-
Unit
m
Device Flatness
See Figure 8
Mounting Torque
Weight
Mounting Screw: - M3
Note Figure 9
Recommended 0.7 N • m
Recommended 7.1 kg • cm
0.7
6.9
6.0
N • m
kg • cm
g
Figure 8. Flatness Measurement Position
Figure 9. Mounting Screws Torque Order
Note:
12. Do not make over torque when mounting screws. Much mounting torque may cause package cracks, as well as bolts and Al heat-sink destruction.
13. Avoid one side tightening stress. Figure 10 shows the recommended torque order for mounting screws. Uneven mounting can cause the ceramic substrate of the Motion SPM
55 product to be damaged. The Pre-screwing torque is set to 20 ~ 30 % of maximum torque rating.
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Time Charts of Protective Function
Input Signal
Protection
RESET
SET
RESET
Circuit State
UVDDR
a1
a6
UVDDD
a2
Control
Supply Voltage
a3
a4
a7
Output Current
a5
Fault Output Signal
a1 : Control supply voltage rises: After the voltage rises UVDDR, the circuits start to operate when next input is applied.
a2 : Normal operation: IGBT ON and carrying current.
a3 : Under voltage detection (UVDDD).
a4 : IGBT OFF in spite of control input condition.
a5 : Fault output operation starts.
a6 : Under voltage reset (UVDDR).
a7 : Normal operation: IGBT ON and carrying current.
Figure 10. Under-Voltage Protection (Low-Side)
Input Signal
Protection
RESET
SET
RESET
Circuit State
UVBSR
b5
b1
UVBSD
b2
Control
Supply Voltage
b3
b4
b6
Output Current
High-level (no fault output)
Fault Output Signal
b1 : Control supply voltage rises: After the voltage reaches UVBSR, the circuits start to operate when next input is applied.
b2 : Normal operation: IGBT ON and carrying current.
b3 : Under voltage detection (UVBSD).
b4 : IGBT OFF in spite of control input condition, but there is no fault output signal.
b5 : Under voltage reset (UVBSR
)
b6 : Normal operation: IGBT ON and carrying current
Figure 11. Under-Voltage Protection (High-Side)
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Hin
Lin
Ho
Lo
d3
d4
d5
d1
d2
Hin : High-side Input Signal
Lin : Low-side Input Signal
Ho : High-side IGBT Gate Voltage
Lo : Low-side IGBT Gate Voltage
/Fo : Fault Output
/Fo
d1 : High Side First - Input - First - Output Mode
d2 : Low Side Noise Mode : No Lo
d3 : High Side Noise Mode : No Ho
d4 : Low Side First - Input - First - Output Mode
d5 : In - Phase Mode : No Ho
Figure 12. Inter-Lock Function
H IN
LIN
H O
S m art Turn - o ff
A ctivated b y n ext
in p ut after fault clear
S o ft O ff
LO
O ver- C urren t
D etectio n
C S C
N o O utp ut
V F
HIN : High-side Input Signal
LIN : Low-side Input Signal
HO : High-Side Output Signal
LO : Low-Side Output Signal
CSC : Over Current Detection Input
VF : Fault Out Function
Figure 13. Fault-Out Function By Over Current Protection
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H IN
LIN
H O
A ctivated by
next input after
fault claear
N o O utput
S m art
Turn-off
S oft O ff
LO
C S C
VF
E xternal
shutdo w n inp ut
HIN : High-side Input Signal
LIN : Low-side Input Signal
HO : High-Side Output Signal
LO : Low-Side Output Signal
CSC : Over Current Detection Input
VF : Shutdown Input Function
Figure 14. Shutdown Input Function By External Command
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(20) VB(U)
P (1)
U (2)
VB(U)
CBS
CBSC
CBSC
CBSC
OUT(UH)
VS(U)
RS
(9) IN(UH)
(19) VB(V)
IN(UH)
VB(V)
Gating UH
Gating VH
Gating WH
CBS
RS
(11) IN(VH)
(18) VB(W)
OUT(VH)
VS(V)
IN(VH)
VB(W)
V (3)
M
CBS
RS
(13) IN(WH)
(14) VDD
IN(WH)
VDD
CDCS
VDC
M
C
U
OUT(WH)
VS(W)
15V line
W (4)
CPS CPS CPS
CSPC15
CSP15
(15) COM
COM
5V line
OUT(UL)
OUT(VL)
RPF
RSU
N
U (5)
CSPC05
CSP05
RS
(17) VF
Fault
VF
CPF
CBPF
RS
(8) IN(UL)
RSV
Gating UL
Gating VL
Gating WL
IN(UL)
IN(VL)
IN(WL)
NV (6)
RS
RS
(10) IN(VL)
(12) IN(WL)
CSC
OUT(WL)
(16) CSC
CPS CPS
CPS
RSW
CSC
NW (7)
RF
U-Phase Current
V-Phase Current
W-Phase Current
Input Signal for
Short-Circuit Protection
Temp. Monitoring
Note:
1) To avoid malfunction, the wiring of each input should be as short as possible. (less than 2 ~ 3 cm)
®
2) By virtue of integrating an application specific type of HVIC inside the SPM 55 product, direct coupling to MCU terminals without any opto-coupler or transformer isolation is
possible.
3) V is open-drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor that makes I up to 5 mA. Please refer to Fig-
F
FO
ure 15.
4) C
of around seven times larger than bootstrap capacitor C is recommended.
BS
SP15
5) Input signal is active-HIGH type. There is a 10 k resistor inside the IC to pull down each input signal line to GND. RC coupling circuits is recommanded for the prevention of
input signal oscillation. R C time constant should be selected in the range 50 ~ 150 ns. (Recommended R = 100 Ω, C = 1 nF)
S
PS
S
PS
6) To prevent errors of the protection function, the wiring around R and C should be as short as possible.
F
SC
7) In the short-circuit protection circuit, please select the R C time constant in the range 1.5 ~ 2 s.
F
SC
8) The connection between control GND line and power GND line which includes the N , N , N must be connected to only one point. Please do not connect the control GND
U
V
W
to the power GND by the broad pattern. Also, the wiring distance between control GND and power GND should be as short as possible.
9) Each capacitor should be mounted as close to the pins of the Motion SPM 55 product as possible.
10) To prevent surge destruction, the wiring between the smoothing capacitor and the P and GND pins should be as short as possible. The use of a high frequency non-inductive
capacitor of around 0.1 ~ 0.22 F between the P and GND pins is recommended.
11) Relays are used at almost every systems of electrical equipments of home appliances. In these cases, there should be sufficient distance between the CPU and the relays.
12) The zener diode or transient voltage suppressor should be adopted for the protection of ICs from the surge destruction between each pair of control supply terminals.
(Recommanded zener diode is 22 V / 1 W, which has the lower zener impedance characteristic than about 15 Ω)
13) Please choose the electrolytic capacitor with good temperature characteristic in C . Also, choose 0.1 ~ 0.2 F R-category ceramic capacitors with good temperature and
BS
frequency characteristics in C
.
BSC
14) For the detailed information, please refer to the application notes.
Figur15. Typical Application Circuit
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Detailed Package Outline Drawings (FNA51560TD3, Long Lead)
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