FNB33060T [ONSEMI]
智能功率模块，600 V，30A;
| 型号： | FNB33060T |
| 厂家： | 
ONSEMI |
| 描述： | 智能功率模块，600 V，30A |
| 文件： | 总14页 (文件大小：779K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Motion SPM) 3 Series
FNB33060T
FNB33060T is an advanced Motion SPM 3 module providing
a fully−featured, high−performance inverter output stage for AC
Induction, BLDC, and PMSM motors. These modules integrate
optimized gate drive of the built−in IGBTs to minimize EMI
and losses, while also providing multiple on−module protection
features including under−voltage lockouts, over−current shutdown,
thermal monitoring of drive IC, and fault reporting. The built−in,
high−speed HVIC requires only a single supply voltage and translates
the incoming logic−level gate inputs to the high−voltage, high−current
drive signals required to properly drive the module’s internal IGBTs.
Separate negative IGBT terminals are available for each phase
to support the widest variety of control algorithms.
3D Package Drawing
(Click to Activate 3D Content)
SPMCA−027 / PDD STD, SPM27−CA, DBC TYPE
CASE MODFJ
Features
MARKING DIAGRAM
• 600 V − 30 A 3−Phase IGBT Inverter with Integral Gate Drivers
and Protection
• Low−Loss, Short−Circuit Rated IGBTs
• Very Low Thermal Resistance Using Al O DBC Substrate
&Y
FNB33060T
&Z&K &3
EK&Z&K&3
2
3
• Built−In Bootstrap Diodes and Dedicated Vs Pins Simplify
PCB Layout
• Separate Open−Emitter Pins from Low−Side IGBTs for
Three−Phase Current Sensing
• Single−Grounded Power Supply
• LVIC Temperature−Sensing Built−In for Temperature
Monitoring
$Y
&Z
&K
&3
= onsemi Logo
= Assembly Plant Code
= 2−Digits Lot Run Traceability Code
= 3−Digit Date Code
FNB33060T = Specific Device Code
• Isolation Rating: 2500 V / min
rms
• This Device is Pb−Free and Halide Free
ORDERING INFORMATION
See detailed ordering and shipping information on page 12 of
this data sheet.
Applications
• Motion Control − Home Appliance / Industrial Motor
Integrated Power Functions
• 600 V − 30 A IGBT Inverter for Three−phase DC / AC Power
Conversion (Please refer to Figure 2)
Related Resources
®
• AN−9088 − Motion SPM 3 V6 Series
Users Guide
• AN−9086 − SPM 3 Package Mounting
Integrated Drive, Protection and System Control Functions
• For Inverter High−side IGBTs: gate drive circuit, high−voltage
isolated high−speed level shifting control circuit Under−Voltage
Lock−Out Protection (UVLO)
Guide
(Note: Available bootstrap circuit example is given in Figures 5
and 15)
• For Inverter Low−side IGBTs: gate drive circuit, Short−Circuit
Protection (SCP) control supply circuit Under−Voltage Lock−Out
protection (UVLO)
• Fault Signaling: corresponding to UVLO (low−side supply) and SC
faults
• Input Interface: Active−HIGH interface, works with 3.3 / 5 V logic,
Schmitt−trigger input
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
October, 2022 − Rev. 2
FNB33060T/D
FNB33060T
PIN CONFIGURATION
Figure 1. Pin Configuration − Top View
Table 1. PIN DESCRIPTIONS
Pin No.
Pin Name
Pin Description
1
2
V
Low−Side Common Bias Voltage for IC and IGBTs Driving
Common Supply Ground
DD(L)
COM
3
IN
IN
Signal Input for Low−Side U−Phase
(UL)
(VL)
(WL)
4
Signal Input for Low−Side V−Phase
5
IN
Signal Input for Low−Side W−Phase
6
V
FO
Fault Output
7
V
C
Output for LVIC Temperature Sensing Voltage Output
Shut Down Input for Short−Circuit Current Detection Input
Signal Input for High−Side U−Phase
TS
SC
8
9
IN
(UH)
DD(H)
10
11
12
13
14
15
16
17
V
High−Side Common Bias Voltage for IC and IGBTs Driving
High−Side Bias Voltage for U−Phase IGBT Driving
High−Side Bias Voltage Ground for U−Phase IGBT Driving
Signal Input for High−Side V−Phase
V
B(U)
V
S(U)
IN
(VH)
V
DD(H)
High−Side Common Bias Voltage for IC and IGBTs Driving
High−Side Bias Voltage for V−Phase IGBT Driving
High−Side Bias Voltage Ground for V Phase IGBT Driving
Signal Input for High−Side W−Phase
V
B(V)
S(V)
(WH)
V
IN
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FNB33060T
Table 1. PIN DESCRIPTIONS (continued)
Pin No.
18
Pin Name
Pin Description
V
DD(H)
High−Side Common Bias Voltage for IC and IGBTs Driving
High−Side Bias Voltage for W−Phase IGBT Driving
High−Side Bias Voltage Ground for W−Phase IGBT Driving
Negative DC−Link Input for U−Phase
Negative DC−Link Input for V−Phase
Negative DC−Link Input for W−Phase
Output for U−Phase
19
V
B(W)
20
V
S(W)
21
N
N
U
22
V
23
N
W
24
U
25
V
W
P
Output for V−Phase
26
Output for W−Phase
27
Positive DC−Link Input
INTERNAL EQUIVALENT CIRCUIT AND INPUT/OUTPUT PINS
P (27)
(19) V
(18) V
B(W)
V
B
DD(H)
V
DD
OUT
V
COM
IN
(17) IN
(WH)
W (26)
S
(20) V
S(W)
(15) V
(14) V
B(V)
V
B
DD(H)
V
DD
OUT
V
COM
IN
(13) IN
(VH)
V (25)
S
(16) V
S(V)
(11) V
B(U)
V
V
B
(10) V
DD(H)
DD
OUT
V
COM
IN
(9) IN
(12) V
(UH)
U (24)
S
S(U)
(8) C
SC
OUT
OUT
OUT
C
V
SC
(7) V
(6) V
TS
TS
N
(23)
(22)
(21)
W
FO
V
FO
(5) IN
(WL)
IN
(4) IN
(3) IN
(VL)
IN
N
V
(UL)
IN
(2) COM
(1) V
COM
DD(L)
V
DD
N
U
Notes:
1. Inverter low−side is composed of three IGBTs, freewheeling diodes for each IGBT, and one control IC. It has gate drive and protection
functions.
2. Inverter power side is composed of four inverter DC−link input terminals and three inverter output terminals.
3. Inverter high−side is composed of three IGBTs, freewheeling diodes, and three drive ICs for each IGBT.
Figure 2. Internal Block Diagram
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FNB33060T
Table 2. ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)
J
Symbol
Parameter
Conditions
Rating
Unit
INVERTER PART
V
Supply Voltage
Applied between P − N , N , N
450
500
600
30
V
V
V
A
A
PN
PN(Surge)
U
V
W
V
Supply Voltage (Surge)
Applied between P − N , N , N
U V
W
V
CES
Collector − Emitter Voltage
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
I
C
T
T
= 25°C, T ≤ 150°C (Note 4)
J
C
I
= 25°C, T ≤ 150°C, Under 1 ms Pulse Width
60
CP
C
J
(Note 4)
P
C
Collector Dissipation
T
C
= 25°C per One Chip (Note 4)
89
W
T
Operating Junction Temperature
−40 ~ 150
_C
J
CONTROL PART
V
Control Supply Voltage
Applied between V
, V − COM
DD(H) DD(L)
20
20
V
V
DD
V
High−Side Control Bias Voltage
Applied between V
− V , V
S(U) B(V)
− V
,
BS
B(U)
S(V)
V
− V
S(W)
B(W)
V
IN
Input Signal Voltage
Applied between IN
, IN
, IN
, IN
,
−0.3 ~ V + 0.3
V
(UH)
(VH)
(WH)
(UL)
DD
IN
, IN
− COM
(VL)
(WL)
V
Fault Output Supply Voltage
Fault Output Current
Applied between V − COM
−0.3 ~ V + 0.3
V
mA
V
FO
FO
DD
I
Sink Current at V pin
2
FO
FO
V
SC
Current−Sensing Input Voltage
Applied between C − COM
−0.3 ~ V + 0.3
SC
DD
BOOTSTRAP DIODE PART
V
Maximum Repetitive Reverse Voltage
Forward Current
600
0.5
2.0
V
A
A
RRM
I
F
T
T
= 25°C, T ≤ 150°C (Note 4)
J
C
I
Forward Current (Peak)
= 25°C, T ≤ 150°C, Under 1 ms Pulse Width
J
(Note 4)
FP
C
T
Operating Junction Temperature
−40 ~ 150
_C
J
TOTAL SYSTEM
V
Self Protection Supply Voltage Limit
(Short−Circuit Protection Capability)
V
J
= V = 13.5 ~ 16.5 V,
400
V
PN(PROT)
DD
BS
T = 150°C, Non−Repetitive, < 2 ms
T
Module Case Operation Temperature
Storage Temperature
See Figure 1
−40 ~ 125
−40 ~ 125
2500
_C
_C
C
T
STG
V
ISO
Isolation Voltage
60 Hz, Sinusoidal, AC 1 Minute,
Connection Pins to Heat Sink Plate
V
rms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
4. These values had been made an acquisition by the calculation considered to design factor.
Table 3. THERMAL RESISTANCE
Symbol
Parameter
Conditions
Min
−
Typ
−
Max
1.4
Unit
_C/W
_C/W
R
Inverter IGBT part, (Per 1 / 6 Module)
Inverter FWDi part, (Per 1 / 6 Module)
th(j−c)Q
Junction to Case Thermal
Resistance (Note 5)
R
−
−
2.4
th(j−c)F
5. For the measurement point of case temperature (T ), please refer to Figure 1.
C
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FNB33060T
Table 4. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified.)
J
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
INVERTER PART
V
Collector − Emitter
Saturation Voltage
V
V
= V = 15 V,
I
C
= 30 A, T = 25°C
−
1.6
2.2
V
CE(SAT)
DD
IN
BS
J
= 5 V
V
FWDi Forward Voltage
Switching Times
V
V
= 0 V
I = 30 A, T = 25°C
−
0.50
−
2.0
0.90
0.20
0.85
0.15
0.08
0.80
0.25
0.90
0.15
0.10
−
2.6
1.40
0.60
1.35
0.45
−
V
ms
ms
ms
ms
ms
ms
ms
ms
ms
ms
mA
F
IN
F
J
HS
t
= 300 V, V = 15 V, I = 30 A,
PN DD C
T = 25°C
ON
J
t
C(ON)
V
IN
= 0 V ↔ 5 V, Inductive load
See Figure 4
(Note 6)
t
−
OFF
t
−
C(OFF)
t
rr
−
LS
t
V
PN
= 300 V, V = 15 V, I = 30 A,
0.40
−
1.30
0.60
1.40
0.45
−
ON
DD
C
T = 25°C
J
t
C(ON)
V
IN
= 0 V ↔ 5 V, Inductive load
See Figure 4
(Note 6)
t
−
OFF
t
−
C(OFF)
t
rr
−
I
Collector − Emitter Leakage VCE = VCES
Current
−
5
CES
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. t and t
include the propagation delay time of the internal drive IC. t
and t
are the switching times of IGBT itself under the
ON
OFF
C(ON)
C(OFF)
given gate driving condition internally. For the detailed information, please see Figure 3.
100% I
100% I
C
C
t
rr
V
CE
V
CE
I
C
I
C
V
IN
V
IN
t
ON
t
OFF
t
t
C(OFF)
C(ON)
10% I
C
10% V
CE
10% I
C
V
IN(ON)
V
IN(OFF)
90% I
10% V
CE
C
(a) turn−on
(b) turn−off
Figure 3. Switching Time Definition
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FNB33060T
One−Leg Diagram of SPM 3
I
C
P
C
BS
VB
COM(H)OUT(H)
V
(H)
DD
LS Switching
VS
IN(H)
V
PN
HS Switching
LS Switching
U,V,W
V
Inductor
300 V
IN(L)
V
(L)
DD
VFO
TSU
CSC
V
IN
HS Switching
OUT(L)
5 V
0 V
V
DD
4.7 kW
V
COM(L)
V
U, V, W
+15V
V
+5V
Figure 4. Example Circuit for Switching Test
Inductive Load, V = 300 V, V = 15 V, T = 1505C
Inductive Load, V = 300 V, V = 15 V, T = 255C
PN
DD
J
PN
DD
J
2000
1800
1600
1400
1200
1000
800
2000
1800
1600
1400
1200
1000
800
IGBT Turn−on, Eon
IGBT Turn−off, Eoff
FRD Turn−off, Erec
IGBT Turn−on, Eon
IGBT Turn−off, Eoff
FRD Turn−off, Erec
600
600
400
400
200
200
0
0
25
0
5
10
15
20
30
0
5
10
15
20
25
30
I
C
, Collector Current (A)
I
C
, Collector Current (A)
Figure 5. Switching Loss Characteristics
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
20
40
60
80
(5C)
100
120
160
140
T
LVIC
Figure 6. Temperature Profile of VTS (Typical)
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FNB33060T
Table 5. ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
BOOTSTRAP DIODE PART
V
Forward Voltage
I = 0.1 A, T = 25°C
−
−
2.5
80
−
−
V
F
F
J
t
rr
Reverse Recovery
Time
I = 0.1 A, dI / dt = 50 A/ms, T = 25°C
ns
F
F
J
CONTROL PART
I
Quiescent V Supply
V
V
V
= 15 V, IN
= 15 V, IN
= 0 V
V
DD(H)
V
DD(L)
V
DD(H)
− COM
− COM
− COM
−
−
−
−
−
−
0.50
6.00
0.50
mA
mA
mA
QDDH
DD
DD(H)
DD(L)
DD(H)
(UH,VH,WH)
Current
I
= 0 V
(UL,VL,WL)
QDDL
I
Operating V Supply
= 15 V, f
= 20 kHz, duty = 50%,
PDDH
DD
PWM
Current
applied to one PWM signal
input for High−Side
I
V
= 15 V, f
= 20 kHz, duty = 50%,
V
− COM
−
−
−
−
−
−
10.0
0.30
4.50
mA
mA
mA
PDDL
DD(L)
PWM
DD(L)
applied to one PWM signal
input for Low−Side
I
Quiescent V Supply
V
= 15 V, IN
= 0 V
V
V
V
) − V
S(V)
− V
,
QBS
BS
BS
DD
(UH, VH, WH)
B(U
B(V)
B(W)
S(U)
Current
− V
,
S(W)
I
Quiescent V Supply
V
= V = 15 V, f
= 20 kHZ,
V
V
V
) − V
S(V)
− V
,
PBS
BS
BS
PWM
B(U
B(V)
B(W)
S(U)
Current
duty = 50%, applied to one PWM
signal input for High−Side
− V
,
S(W)
V
Fault Output Voltage
V
V
V
= 15 V, V = 0 V, V Circuit: 4.7 kW to 5 V Pull−up
4.5
−
−
−
−
V
V
FOH
DD
DD
DD
SC
FO
V
= 15 V, V = 1 V, V Circuit: 4.7 kW to 5 V Pull−up
0.5
FOL
SC
FO
V
SC(ref)
Short Circuit Trip Level
= 15 V (Note 7)
C
− COM
SC
0.45
9.8
10.3
9.0
9.5
50
0.50
−
0.55
13.3
13.8
12.5
13.0
−
V
UV
Supply Circuit
Under−Voltage
Protection
Detection level
Reset level
V
DDD
DDR
BSD
BSR
UV
UV
UV
−
V
Detection level
Reset level
−
V
−
V
t
Fault−Out Pulse Width
−
ms
mV
FOD
V
LVIC Temperature
Sensing Voltage
Output
V
DD(L)
= 15 V, T = 25C (Note 8)
LVIC
540
640
740
TS
See Figure 6
V
ON Threshold Voltage Applied between IN
− COM,
−
−
−
2.6
V
V
IN(ON)
(UH, VH, WH)
IN
− COM
(UL, VL, WL)
V
OFF Threshold Voltage
0.8
−
IN(OFF)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
7. Short−circuit current protection functioning only at the low−sides.
8. T
is the temperature of LVIC itself. V is only for sensing temperature of LVIC and can not shutdown IGBTs automatically.
LVIC
TS
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FNB33060T
Table 6. RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Supply Voltage
Conditions
Applied between P − N , N , N
W
Min
−
Typ
300
15
Max
400
Unit
V
V
PN
DD
U
V
V
Control Supply Voltage
Applied between V
Applied between V
, V
− COM
14.0
13.0
16.5
18.5
V
DD(H) DD(L)
V
BS
High − Side Bias Voltage
− V
, V
−V ,
S(V)
15
V
B(U)
S(U) B(V)
V
− V
B(W)
S(W)
dV / dt, Control Supply Variation
−1
−
−
−
1
V/ms
ms
DD
dV / dt
BS
t
Blanking Time for Preventing
Arm − Short
For each input signal
−40°C ≤ T ≤ 125°C, −40°C ≤ T ≤ 150°C
1.0
−
dead
f
PWM Input Signal
−
20
5
kHz
V
PWM
C
J
V
SEN
Voltage for Current Sensing
Applied between N , N , N − COM
−5
U
V
W
(Including Surge Voltage)
PW
Minimum Input Pulse Width
V
= V = 15 V, I ≤ 60 A, Wiring Inductance
2.0
2.0
−
−
−
−
−
ms
IN(ON)
DD
BS
C
between N
and DC Link N < 10 nH (Note 9)
U, V, W
PW
IN(OFF)
T
Junction Temperature
−40
150
°C
J
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
9. This product might not make response if input pulse width is less than the recommended value.
25
f
= 5 kHz
SW
20
15
10
5
f
= 15 kHz
SW
V
= 300 V, V = V = 15 V
DD BS
DC
T = 150°C, T = 125°C
j
c
M.I. = 0.9, P.F. = 0.8
Sinusoidal PWM
0
0
20
40
60
80
100
120
140
T , Case Temperature (5C)
C
Figure 7. Allowable Maximum Output Current
NOTE:
10.This allowable output current value is the reference data for the safe operation of this product.
This may be different from the actual application and operating condition.
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FNB33060T
Table 7. MECHANICAL CHARACTERISTICS AND RATINGS
Parameter
Device Flatness
Conditions
Min
0
Typ
−
Max
+150
0.8
8.1
−
Unit
mm
See Figure 8
Mounting Torque
Mounting Screw: M3
See Figure 9
Recommended 0.7 N • m
Recommended 7.1 kg • cm
0.6
6.2
10
2
0.7
7.1
−
N • m
kg • cm
s
Terminal Pulling Strength
Terminal Bending Strength
Weight
Load 19.6 N
Load 9.8 N, 90 deg. bend
−
−
times
g
−
15
−
( + )
( + )
Figure 8. Flatness Measurement Position
Pre−Screwing: 1 → 2
Final Screwing: 2 → 1
2
1
NOTES:
11. Do not make over torque when mounting screws. Much mounting torque may cause DBC cracks, as well as bolts and Al heat−sink
destruction.
12.Avoid one−sided tightening stress. Figure 9 shows the recommended torque order for mounting screws. Uneven mounting can cause the
DBC substrate of package to be damaged. The pre−screwing torque is set to 20 ~ 30% of maximum torque rating.
Figure 9. Mounting Screws Torque Order
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FNB33060T
TIME CHARTS OF SPMS PROTECTIVE FUNCTION
Input Signal
Protection
Circuit State
RESET
a1
RESET
SET
UV
DDR
a6
Control
Supply Voltage
UV
a3
a4
DDD
a2
a7
Output Current
a5
Fault Output Signal
a1: Control supply voltage rises: after the voltage rises UV
a2: Normal operation: IGBT ON and carrying current.
, the circuits start to operate when next input is applied.
DDR
a3: Under−voltage detection (UV
).
DDD
a4: IGBT OFF in spite of control input condition.
a5: Fault output operation starts with a fixed pulse width.
a6: Under−voltage reset (UV
).
DDR
a7: Normal operation: IGBT ON and carrying current by triggering next signal from LOW to HIGH.
Figure 10. Under−Voltage Protection (Low−Side)
Input Signal
Protection
RESET
SET
RESET
Circuit State
UV
BSR
b5
b1
Control
Supply Voltage
b3
b4
UV
BSD
b6
b2
Output Current
High−level (no fault output)
Fault Output Signal
b1: Control supply voltage rises: after the voltage reaches UV
b2: Normal operation: IGBT ON and carrying current.
, the circuits start to operate when next input is applied.
BSR
b3: Under voltage detection (UV
).
BSD
b4: IGBT OFF in spite of control input condition, but there is no fault output signal.
b5: Under−voltage reset (UV ).
BSR
b6: Normal operation: IGBT ON and carrying current by triggering next signal from LOW to HIGH.
Figure 11. Under−Voltage Protection (High−Side)
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FNB33060T
Lower arms
control input
c6
c7
Protection
Circuit state
SET
RESET
c4
Internal IGBT
Gate−Emitter Voltage
Internal delay
at protection circuit
SC current trip level
c8
c1
Output Current
SC Reference Voltage
Sensing Voltage
of sense resistor
RC Filter circuit
time constant
delay
Fault Output Signal
c5
(with the external sense resistance and RC filter connection)
c1: Normal operation: IGBT ON and carrying current.
c2: Short circuit current detection (SC trigger).
c3: All low−side IGBT’s gate are hard interrupted.
c4: All low−side IGBTs turn OFF.
c5: Fault output operation starts with a fixed pulse width.
c6: Input HIGH: IGBT ON state, but during the active period of fault output the IGBT doesn’t turn ON.
c7: Fault output operation finishes, but IGBT doesn’t turn on until triggering next signal from LOW to HIGH.
c8: Normal operation: IGBT ON and carrying current.
Figure 12. Short−Circuit Protection (Low−Side Operation Only)
INPUT/OUTPUT INTERFACE CIRCUIT
5 V Line (MCU or Control power)
4.7 kW
SPM
, IN , IN
(VH)
IN
IN
(UH)
(WH)
(WL)
, IN , IN
(VL)
(UL)
FO
MCU
V
COM
NOTE:
13.RC coupling at each input might change depending on the PWM control scheme used in the application and the wiring impedance
of the application’s printed circuit board. The input signal section of the Motion SPM 3 product integrates 5 kW (typ.) pull−down resistor.
Therefore, when using an external filtering resistor, please pay attention to the signal voltage drop at input terminal.
Figure 13. Recommended MCU I/O Interface Circuit
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11
FNB33060T
P (27)
W (26)
R1
(17) IN(WH)
(18) VDD(H)
Gating WH
Gating VH
Gating UH
IN
VDD
OUT
VS
C4
COM
(19) VB(W)
C3 C4
VB
(20) VS(W)
D2
D2
D2
R1
(13) IN (VH)
IN
VDD
(14) VDD(H)
OUT
VS
C4
COM
(15) VB(V)
(16) VS(V)
C3 C4
V (25)
VB
M
R1
(9) IN
(UH)
IN
(10) VDD(H)
VDD
COM
C7
VDC
M-
C-
U
OUT
VS
C4
C1 C1 C1
(11) VB(U)
(12) VS(U)
U (24)
5 V line
R3
C3 C4
VB
VTS
R6
D
C6
C5
(8) CSC
(7) VTS
B
OUT
OUT
OUT
C
CSC
VTS
R4
A
NW (23)
NV (22)
NU (21)
R1
R1
(6) VFO
VFO
Fault
(5) IN
(WL)
Gating WL
Gating VL
Gating UL
IN
IN
IN
R1
R1
(4) IN(VL)
R4
R4
(3) IN
(UL)
E
(2) COM
(1) VDD(L)
Power
5 V line
COM
VDD
C1
C1
C1 C1 C1
GND Line
C4
C2
D2
R5
R5
R5
Control
GND Line
W−Phase Current
V−Phase Current
U−Phase Current
Input Signal for
Short−Circuit Protection
C5
C5
C5
Figure 14. Typical Application Circuit
NOTES:
14.To avoid malfunction, the wiring of each input should be as short as possible (less than 2 − 3 cm).
15.V output is open−drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor
FO
that makes I up to 2 mA. Please refer to Figure 13.
FO
16.Input signal is active−HIGH type. There is a 5 kW resistor inside the IC to pull−down each input signal line to GND. RC coupling circuits should
be adopted for the prevention of input signal oscillation. R C time constant should be selected in the range 50 ~ 150 ns. (Recommended
1
1
R1 = 100 W, C1 = 1 nF).
17.Each wiring pattern inductance of A point should be minimized (Recommend less than 10 nH). Use the shunt resistor R of surface mounted
4
(SMD) type to reduce wiring inductance. To prevent malfunction, wiring of point E should be connected to the terminal of the shunt resistor
R as close as possible.
4
18.To prevent errors of the protection function, the wiring of B, C, and D point should be as short as possible.
19.In the short−circuit protection circuit, please select the R C time constant in the range 1.5 ~ 2 ms. Do enough evaluation on the real system
6
6
because short−circuit protection time may vary wiring pattern layout and value of the R C time constant.
6
6
®
20.Each capacitor should be mounted as close to the pins of the Motion SPM 3 product as possible.
21.To prevent surge destruction, the wiring between the smoothing capacitor C7 and the P & GND pins should be as short as possible. The
use of a high−frequency non−inductive capacitor of around 0.1 ~ 0.22 mF between the P & GND pins is recommended.
22.Relays are used at almost every systems of electrical equipments at industrial application. In these cases, there should be sufficient distance
between the CPU and the relays.
23.The zener diode or transient voltage suppressor should be adopted for the protection of ICs from the surge destruction between each pair
of control supply terminals (Recommanded zener diode is 22 V / 1 W, which has the lower zener impedance characteristic than about 15 W).
24.C of around 7 times larger than bootstrap capacitor C is recommended.
2
3
25.Please choose the electrolytic capacitor with good temperature characteristic in C . Also, choose 0.1 ~ 0.2 mF R−category ceramic capacitors
3
with good temperature and frequency characteristics in C .
4
PACKAGE MARKING AND ORDERING INFORMATION
Device
Device Marking
Package
Shipping
FNB33060T
FNB33060T
SPMCA−027 / PDD STD, SPM27−CA, DBC TYPE
(Pb−Free / Halide Free)
60 Units / Tube
SPM is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or
other countries.
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12
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SPMCA−027 / PDD STD, SPM27−CA, DBC TYPE
CASE MODFJ
ISSUE O
DATE 31 JAN 2017
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13563G
SPMCA−027 / PDD STD, SPM27−CA, DBC TYPE
PAGE 1 OF 1
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