FND43060T2 [ONSEMI]
智能功率模块,600V,30A;型号: | FND43060T2 |
厂家: | ONSEMI |
描述: | 智能功率模块,600V,30A |
文件: | 总15页 (文件大小:654K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Motion SPM) 45 Series
FND43060T2
General Description
FND43060T2 is an advanced Motion SPM 45 module providing
a fully−featured, high−performance inverter output stage for AC
Induction, BLDC, and PMSM motors. These modules integrate
optimized gate drive of the built−in IGBTs to minimize EMI and
losses, while also providing multiple on−module protection features
including under−voltage lockouts, over−current shutdown, thermal
monitoring, and fault reporting. The built−in, high−speed HVIC
requires only a single supply voltage and translates the incoming
logic−level gate inputs to the high−voltage, high−current drive signals
required to properly drive the module’s robust short−circuit−rated
IGBTs. Separate negative IGBT terminals are available for each phase
to support the widest variety of control algorithms.
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Features
• UL Certified No. E209204 (UL1557)
• 600 V − 30 A 3−Phase IGBT Inverter with Integral Gate Drivers
and Protection
• Low Thermal Resistance Using Ceramic Substrate
• Low−Loss, Short−Circuit Rated IGBTs
• Built−In Bootstrap Diodes and Dedicated Vs Pins Simplify PCB
Layout
• Built−In NTC Thermistor for Temperature Monitoring
• Separate Open−Emitter Pins from Low−Side IGBTs for
Three−Phase Current Sensing
SPMAA−C26
CASE MODFC
• Single−Grounded Power Supply
Figure 1. Package Overview
(Click to Activate 3D Content)
• Isolation Rating: 4000 V /min
rms
• Remove Dummy Pin
MARKING DIAGRAM
Applications
• Motion Control − Home Appliance/Industrial Motor
XXXXXXXXXXX
ZZZ ATYWW
NNNNNNN
Related Resources
®
• AN−9084 − Smart Power Module, Motion SPM 45 H V3 Series
User’s Guide
XXXX
ZZZ
AT
Y
WW
NNN
= Specific Device Code
= Lot ID
= Assembly and Test Location
= Year
= Work Week
= Serial Number
®
• AN−9072 − Smart Power Module, Motion SPM in SPM45H
Thermal Performance Information
®
• AN−9071 − Smart Power Module Motion SPM in SPM45H
Mounting Guidance
®
• AN−9760 − PCB Design Guidance for SPM
Integrated Power Functions
ORDERING INFORMATION
• 600 V−30 A IGBT inverter for three−phase DC/AC
power conversion (Refer to Figure 3)
Device
Package
Shipping
FND43060T2
SPMAA−J26 12 Units/Rail
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
January, 2021 − Rev. 4
FND43060T2/D
FND43060T2
Integrated Drive, Protection and System Control
Functions
• For inverter high−side IGBTs: gate drive circuit,
• Fault signaling: corresponding to UVLO (low−side
supply) and SC faults
• Input interface: active−HIGH interface, works with
3.3/5 V logic, Schmitt−trigger input
high−voltage isolated high−speed level shifting control
circuit Under−Voltage Lock−Out (UVLO) protection
• For inverter low−side IGBTs: gate drive circuit,
Short−Circuit Protection (SCP) control supply circuit,
Under−Voltage Lock−Out (UVLO) protection
PIN CONFIGURATION
V
V
(26)
(25)
B(U)
V
R
(1)
(2)
TH
S(U)
TH
V
V
(24)
(23)
B(V)
S(V)
P (3)
U (4)
V (5)
W (6)
V
V
(22)
(21)
B(W)
S(W)
Case temperature (T )
C
IN (20)
UH
Detecting Point
IN (19)
IN
VH
(18)
WH
V
CC(H)
V
CC(L)
(17)
(16)
COM (15)
IN
(UL)
(14)
IN
IN
(13)
(12)
(VL)
N
(7)
U
(WL)
V
FO
(11)
N (8)
V
C
(10)
SC
N
(9)
W
Figure 2. Top View
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2
FND43060T2
PIN DESCRIPTIONS
Pin Number
Pin Name
Pin Description
1
V
R
Thermistor Bias Voltage
TH
TH
2
Series Resistor for the Use of Thermistor (Temperature Detection)
Positive DC−Link Input
3
P
U
V
4
Output for U−Phase
5
Output for V−Phase
6
W
Output for W−Phase
7
N
Negative DC−Link Input for U−Phase
U
8
N
Negative DC−Link Input for V−Phase
V
9
N
Negative DC−Link Input for W−Phase
Capacitor (Low−Pass Filter) for Short−circuit Current Detection Input
Fault Output
W
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
C
V
SC
FO
(WL)
IN
Signal Input for Low−Side W−Phase
IN
IN
Signal Input for Low−Side V−Phase
(VL)
Signal Input for Low−Side U−Phase
(UL)
COM
Common Supply Ground
V
DD(L)
DD(H)
Low−Side Common Bias Voltage for IC and IGBTs Driving
High−Side Common Bias Voltage for IC and IGBTs Driving
Signal Input for High−Side W−Phase
V
IN
(WH)
IN
IN
Signal Input for High−Side V−Phase
(VH)
(UH)
S(W)
B(W)
Signal Input for High−Side U−Phase
V
V
High−Side Bias Voltage Ground for W−Phase IGBT Driving
High−Side Bias Voltage for W−Phase IGBT Driving
High−Side Bias Voltage Ground for V−Phase IGBT Driving
High−Side Bias Voltage for V−Phase IGBT Driving
High−Side Bias Voltage Ground for U−Phase IGBT Driving
High−Side Bias Voltage for U−Phase IGBT Driving
V
S(V)
V
B(V)
V
S(U)
V
B(U)
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3
FND43060T2
INTERNAL EQUIVALENT CIRCUIT AND INPUT/OUTPUT PINS
V
R
(1)
(2)
TH
Thermister
TH
P (3)
V
V
(26)
(25)
B(U)
UVB
UVS
S(U)
OUT(UH)
UVS
V
V
(24)
(23)
B(V)
U (4)
VVB
VVS
S(V)
V
V
(22)
(21)
B(W)
WVB
WVS
S(W)
OUT(VH)
VVS
IN (20)
UH
V (5)
IN(UH)
IN(VH)
IN(WH)
IN (19)
VH
IN
(18)
WH
V
DD(H)
(17)
VDD
OUT(WH)
WVS
COM
W (6)
V
(16)
DD(L)
VDD
OUT(UL)
OUT(VL)
OUT(WL)
COM (15)
COM
N
(7)
U
IN
(14)
(UL)
IN(UL)
IN(VL)
IN(WL)
VFO
IN
IN
(13)
(12)
(VL)
(WL)
N (8)
V
V
FO
(11)
C
(10)
SC
C(SC)
N
(9)
W
NOTES:
1. Inverter high−side is composed of three IGBTs, freewheeling diodes, and one control IC for each IGBT.
2. Inverter low−side is composed of three IGBTs, freewheeling diodes, and one control IC for each IGBT. It has gate drive
and protection functions.
3. Inverter power side is composed of four inverter DC−link input terminals and three inverter output terminals.
Figure 3. Internal Block Diagram
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FND43060T2
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)
J
Symbol
Parameter
Conditions
Rating
Unit
INVERTER PART
V
Supply Voltage
Applied between P−N , N , N
450
500
600
30
V
V
V
A
A
PN
PN(Surge)
U
V
W
V
Supply Voltage (Surge)
Applied between P−N , N , N
U V
W
V
CES
Collector−Emitter Voltage
I
C
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
T
T
= 25°C, T < 150°C
J
C
I
= 25°C, T < 150°C, Under 1 ms
60
CP
C
J
Pulse Width (Note 1)
P
C
Collector Dissipation
T
C
= 25°C per One Chip (Note 1)
59
W
T
J
Operating Junction Temperature
−40 ∼ 150
°C
CONTROL PART
V
Control Supply Voltage
Applied between V
, V − COM
DD(H) DD(L)
20
20
V
V
DD
V
High−Side Control Bias Voltage
Applied between V
− V
,
BS
B(U)
S(U)
− V
S(V) B(W) S(W)
V
− V
, V
B(V)
V
IN
Input Signal Voltage
Applied between IN
, IN
, IN
,
−0.3 ∼ V +0.3
V
(UH)
(VH)
(WH)
DD
IN
, IN
, IN
− COM
(UL)
(VL)
(WL)
V
Fault Output Supply Voltage
Fault Output Current
Applied between V − COM
−0.3 ∼ V +0.3
V
mA
V
FO
FO
DD
I
Sink Current at V pin
1
FO
FO
V
SC
Current Sensing Input Voltage
Applied between C − COM
−0.3∼ V +0.3
SC
DD
BOOTSTRAP DIODE PART
V
Maximum Repetitive Reverse Voltage
Forward Current
600
0.50
2.0
V
A
A
RRM
I
F
T
T
= 25°C, T < 150°C
J
C
I
Forward Current (Peak)
= 25°C, T < 150°C, Under 1 ms
J
Pulse Width (Note 1)
FP
C
T
J
Operating Junction Temperature
−40 ∼ 150
°C
TOTAL SYSTEM
V
Self−Protection Supply Voltage Limit
(Short−Circuit Protection Capability)
V
J
= V = 13.5 V ∼ 16.5 V
400
V
PN(PROT)
DD
BS
T = 150°C, Non−repetitive, < 2 ms
T
Module Case Operation Temperature
Storage Temperature
See Figure 2
−40 ∼ 125
−40 ∼ 125
4000
°C
°C
C
T
STG
V
ISO
Isolation Voltage
60 Hz, Sinusoidal, AC 1 minute,
Connect Pins to Heat Sink Plate (Note 3)
V
rms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE
Symbol
Parameter
Conditions
Min.
−
Typ.
−
Max.
2.1
Unit
°C/W
°C/W
R
Junction to Case Thermal
Resistance (Note 2)
Inverter IGBT Part (per 1/6 module)
Inverter FWDi Part (per 1/6 module)
th(j−c)Q
R
−
−
2.8
th(j−c)F
1. These values had been made an acquisition by the calculation considered to design factor.
2. For the measurement point of case temperature (T ), please refer to Figure 2.
C
3. For Recommended Heat−Sink Design, please see Figure 11. If do not follow Recommended, Viso is 2000 Vrms.
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FND43060T2
ELECTRICAL CHARACTERISTICS − INVERTER PART (T = 25°C unless otherwise specified)
J
Symbol
Parameter
Conditions
= 30 A, T = 25°C
Min.
Typ.
Max.
Unit
V
Collector − Emitter Saturation
V
V
= V = 15 V,
I
C
−
1.65
2.25
V
CE(SAT)
DD
IN
BS
J
Voltage
= 5 V
V
FWDi Forward Voltage
Switching Times
V
V
= 0 V
I = 30 A, T = 25°C
−
0.45
−
2.00
0.85
0.20
0.70
0.15
0.10
0.90
0.30
0.80
0.15
0.15
−
2.60
1.35
0.50
1.20
0.45
−
V
ms
ms
ms
ms
ms
ms
ms
ms
ms
ms
mA
F
IN
F
J
HS
LS
t
= 300 V, V = V = 15 V, I = 30 A,
PN DD BS C
ON
T = 25°C
J
t
C(ON)
V
IN
= 0 V ⇔ 5 V, Inductive Load
(Note 4)
t
−
OFF
t
−
C(OFF)
t
rr
−
t
V
PN
= 300 V, V = V = 15 V, I = 30 A,
0.5
−
1.40
0.60
1.30
0.45
−
ON
DD
BS
C
T = 25°C
J
t
C(ON)
V
IN
= 0 V ⇔ 5 V, Inductive Load
(Note 4)
t
−
OFF
t
−
C(OFF)
t
rr
−
I
Collector−Emitter Leakage
Current
V
CE
= V
CES
−
1
CES
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. t and t
include the propagation delay of the internal drive IC. t
and t
are the switching time of IGBT itself under the given
ON
OFF
C(ON)
C(OFF)
gate driving condition internally. For the detailed information, please see Figure 4.
100% I
100% I
C
C
t
rr
I
C
I
C
V
CE
V
CE
V
IN
V
IN
t
ON
t
OFF
t
t
c(OFF)
c(ON)
10% I
C
V
IN(ON)
V
IN(OFF)
10% V
10% I
CE
C
90% I 10% V
C
CE
(a) turn − on
(b) turn − off
Figure 4. Switching Time Definition
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FND43060T2
Inductive Load, V = 300 V, V = 15 V, T = 25°C
Inductive Load, V = 300 V, V = 15 V, T = 150°C
PN
DD
J
PN
DD
J
2000
1800
2000
1800
IGBT Turn−ON, E
IGBT Turn−ON, E
on
on
off
IGBT Turn−OFF, E
IGBT Turn−OFF, E
IGBT Turn−OFF, E
off
rec
IGBT Turn−OFF, E
rec
1600
1400
1600
1400
1200
1000
1200
1000
800
600
400
200
0
800
600
400
200
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
COLLECTOR CURRENT, I [AMPERES]
COLLECTOR CURRENT, I [AMPERES]
C
C
Figure 5. Switching Loss Characteristics (Typical)
CONTROL PART
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
I
Quiescent V Supply Current
V
= 15 V,
(UH,VH.WH)
V
DD(H)
V
DD(L)
V
DD(H)
− COM
− COM
− COM
−
−
0.10
mA
QDDH
DD
DD(H)
IN
= 0 V
I
V
= 15 V,
−
−
−
−
2.65
0.15
mA
mA
QDDL
PDDH
DD(L)
IN
= 0 V
(UL,VL,WL)
I
Operating V Supply Current
V
DD(H)
= 15 V, f
= 20 kHz,
DD
PWM
duty = 50%, Applied to one
PWM Signal Input for High−Side
I
VDD = 15 V, f
= 20 kHz,
V
− COM
−
−
−
−
−
−
4.00
0.30
2.00
mA
mA
mA
PDDL
(L)
PWM
DD(L)
duty = 50%, Applied to one
PWM Signal Input for Low−Side
I
Quiescent V Supply Current
V
= 15 V,
(UH,VH.WH)
V
B(U)
V
B(V)
V
B(W)
− V
S(V)
− V
,
QBS
BS
BS
S(U)
IN
= 0 V
− V
,
,
,
S(W)
I
Operating V Supply Current
V
PWM
= V = 15 V,
V
B(U)
V
B(V)
V
B(W)
− V
− V
,
PBS
BS
DD
BS
S(U)
S(V)
− V
f
= 20 kHz, duty = 50%,
,
Applied to one PWM Signal
Input for High−Side
S(W)
V
Fault Output Voltage
Short Circuit Trip Leve
V
V
V
= 0 V, V Circuit: 4.7 kW to 5 V Pull−up
4.5
−
−
−
−
0.5
0.55
13.0
13.5
12.5
13.0
−
V
V
FOH
SC
SC
DD
FO
V
= 1 V, V Circuit: 4.7 kW to 5 V Pull−up
FO
FOL
V
SC(ref)
= 15 V (Note 5)
C
−COM
SC
0.45
10.5
11.0
10.0
10.5
30
0.50
−
V
UV
Supply Circuit Under−Voltage
Protection
Detection Level
Reset Level
V
DDD
DDR
BSD
BSR
UV
UV
UV
−
V
Detection Level
Reset Level
−
V
−
V
t
Fault−Out Pulse Width
ON Threshold Voltage
OFF Threshold Voltage
Resistance of Thermistor
−
ms
V
FOD
V
IN(ON)
Applied between IN
IN
IN
(VH),
IN
(WH),
IN
(UL),
−
−
2.6
−
(UH),
− COM
IN
(WL)
(VL),
V
0.8
−
−
V
IN(OFF)
R
@ T = 25°C (Note 6)
47
2.9
−
kW
kW
TH
TH
@ T = 100°C
−
−
TH
5. Short−circuit current protection os functioning only at the low−sides.
6. T is the temperature of thermister itself. To know case temperature (T ), please make the experiment considering your application.
TH
C
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FND43060T2
R−T Curve
600
R−T Curve in 505C ~ 1255C
550
500
20
16
12
8
450
400
350
300
250
200
150
100
4
0
50
60
70
80
90
100
110
120
Temperature [5C]
50
0
−20 −10
0
10
20
30
40
50
60
70
80
90 100 110 120
Temperature, T [5C]
TH
Figure 6. R−T Curve of the Built−In Thermistor
BOOTSTRAP DIODE PART
Symbol
Parameter
Conditions
Min.
−
Typ.
2.5
80
Max.
Unit
V
V
F
Forward Voltage
I = 0.1 A, T = 25°C
−
−
F
C
t
rr
Reverse−Recovery Time
I = 0.1 A, dI /dt = 50 A/ms, T = 25°C
−
ns
F
F
J
Built−In Bootstrap Diode V −I Characteristic
F
F
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
T
C
= 25°C
0.0
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
V
F
[V]
NOTE: Built−in bootstrap diode includes around 15 W resistance characteristic.
Figure 7. Built−In Bootstrap Diode Characteristics
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FND43060T2
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Supply Voltage
Conditions
Min.
−
Typ.
300
Max.
400
Unit
V
V
PN
V
DD
Applied between P − N , N , N
U
V
W
Control Supply Voltage
Applied between V
Applied between V
− COM, V
− COM
13.5
13.0
15.0
15.0
16.5
18.5
V
DD(H)
DD(L)
V
BS
High−Side Bias Voltage
− V , V
S(U) B(V)
− V ,
S(V)
V
B(U)
V
− V
B(W)
S(W)
dV /dt,
Control Supply Variation
−1
−
−
1
V/ms
ms
DD
dV /dt
BS
t
Blanking Time for Preventing
Arm−Short
For Each Input Signal
−40°C ≤ T ≤ 150°C, −40°C ≤ T ≤ 150°C
1.0
−
dead
f
PWM Input Signal
−
−
−
20
4
kHz
V
PWM
C
J
V
SEN
Voltage for Current Sensing
Applied between N , N , N − COM
−4
U
V
W
(Including Surge Voltage)
PW
PW
Minimum Input Pulse Width
V
= V = 15 V, I ≤ 60 A, Wiring Inductance
1.2
1.2
−40
−
−
−
−
−
ms
°C
IN(ON)
DD
BS
C
between N , N , N and DC Link N < 10 nH
U
V
W
(Note 7)
IN(OFF)
T
Junction Temperature
150
J
7. This product might not make response if input pulse width is less than the recommended value.
Allowable Maximum Output Current
18
f
= 5 kHz
SW
16
14
12
10
f
= 15 kHz
SW
8
6
V
= 300 V, V = V = 15 V,
DD BS
DC
4
2
0
T
J
= 150°C, T = 125°C
C
M.I. = 0.9, P.F. = 0.8
Sinusoidal PWM
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140
Case Temperature, T [5C]
C
NOTE: This allowable output current value is the reference data for the safe operation of this product. This may be
different from the actual application and operating condition
Figure 8. Allowable Maximum Output Current
MECHANICAL CHARACTERISTICS AND RATINGS
Value
Min.
0
Typ.
−
Max.
+120
0.8
Parameter
Device Flatness
Conditions
Unit
mm
See Figure 9
Mounting Torque
Mounting Screw: M3
See Figure 10
Recommended 0.7 N•m
Recommended 7.1 kg•cm
0.6
6.2
−
0.7
N•m
kg•cm
g
7.1
8.1
Weight
11.00
−
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FND43060T2
Figure 9. Flatness Measurement Position
Pre−Screwing: 1 à 2
Final Screwing: 2 à 1
Figure 10. Mounting Screws Torque Order
Figure 11. Recommended Heat−Sink Design
NOTES:
8. Do not make over torque when mounting screws. Much mounting torque may cause ceramic cracks, as well as bolts and Al heat−sink
destruction.
9. Avoid one side tightening stress. Figure 10 shows the recommended torque order for mounting screws. Uneven mounting can cause the
ceramic substrate of the SPM 45 package to be damaged. The pre−screwing torque is set to 20 ∼ 30% of maximum torque rating.
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FND43060T2
TIME CHARTS OF PROTECTIVE FUNCTION
Input signal
Protection
Circuit State
RESET
a1
SET
RESET
UV
DDR
a6
Control
Supply Voltage
UV
DDD
a3
a4
a2
a7
Output Current
a5
Fault Output Signal
a1: Control supply voltage rises: after the voltage rises UV
a2: Normal operation: IGBT ON and carrying current.
, the circuits start to operate when next input is applied.
DDR
a3: Under voltage detection (UV
).
DDD
a4: IGBT OFF in spite of control input condition.
a5: Fault output operation starts.
a6: Under voltage reset (UV
).
DDR
a7: Normal operation: IGBT ON and carrying current.
Figure 12. Under−Voltage Protection (Low−Side)
Input signal
Protection
Circuit State
RESET
b1
SET
RESET
UV
BSR
b5
Control
Supply Voltage
UV
BSD
b3
b4
b6
b2
Output Current
High−level (no fault output)
Fault Output Signal
b1: Control supply voltage rises: after the voltage reaches UV
b2: Normal operation: IGBT ON and carrying current.
, the circuits start to operate when next input is applied.
BSR
b3: Under voltage detection (UV
).
BSD
b4: IGBT OFF in spite of control input condition, but there is no fault output signal.
b5: Under voltage reset (UV ).
BSR
b6: Normal operation: IGBT ON and carrying current..
Figure 13. Under−Voltage Protection (High−Side)
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11
FND43060T2
Lower Arms
Control Input
c6
c7
Protection
Circuit State
SET
RESET
c4
c3
Internal IGBT
Gate−Emitter Voltage
c2
SC
c1
c8
Output Current
SC Reference Voltage
Sensing Voltage
of Shunt Resistance
CR Circuit Time
c5 Constant Delay
Fault Output Signal
(with the external sense resistance and CR connection)
c1: Normal operation: IGBT ON and carrying current.
c2: Short−circuit current detection (SC trigger).
c3: Hard IGBT gate interrupt.
c4: IGBT turns OFF.
c5: Input “LOW”:IGBT OFF state.
c6: Input “HIGH”: IGBT ON state, but during the active period of fault output the IGBT doesn’t turn ON.
c7: IGBT OFF state.
c8: Normal operation: IGBT ON and carrying current.
Figure 14. Short−Circuit Protection (Low−Side Operation Only)
INPUT/OUTPUT INTERFACE CIRCUIT
+5 V (for MCU and Control power)
R
PF
= 10 kΩ
SPM
IN
IN
, IN
, IN
(UH)
(VH)
(WH)
, IN
(VL)
, IN
(WL)
(UL)
MCU
VFO
COM
NOTE:
10.RC coupling at each input (parts shown dotted) might change depending on the PWM control scheme in the application and the wiring
impedance of the application’s printed circuit board. The input signal section of the Motion SPM 45 product integrates a 5 kW (typ.)
pull−down resistor. Therefore, when using an external filtering resistor, pay attention to the signal voltage drop at input terminal.
Figure 15. Recommended MCU I/O Interface Circuit
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12
FND43060T2
HVIC
(26) VB(U)
VB(U)
P (3)
U (4)
CBS
CBS
CBS
CBSC
(25) VS(U)
(20) IN(UH)
VS(U)
OUT(UH)
VS(U)
RS
RS
RS
IN(UH)
Gating UH
Gating VH
Gating WH
(24) VB(V)
(23) VS(V)
VB(V)
CBSC
VS(V)
(19) IN
(VH)
OUT(VH)
VS(V)
IN(VH)
V (5)
(22) VB(W)
(21) VS(W)
M
VB(W)
VS(W)
CBSC
(18) IN(WH)
(17) VDD(H)
CDCS
VDC
IN(WH)
VCC
M
C
U
OUT(WH)
VS(W)
+15 V
W (6)
CPS CPS CPS
CSPC15
CSP15
(15) COM
COM
+5 V
LVIC
(17) VDD(L)
VDD
VFO
OUT(UL)
RPF
RSU
NU (7)
CSPC05
CSP05
RS
(11) VFO
Fault
CPF
CBPF
OUT(VL)
RS
(14) IN(UL)
(13) IN(VL)
(12) IN(WL)
RSV
Gating UL
Gating VL
Gating WL
IN(UL)
IN(VL)
IN(WL)
NV (8)
RS
RS
CSC
OUT(WL)
COM
CSC
(10) CSC
(1) VTH
(2) RTH
CPS CPS
CPS
RSW
NW (9)
RF
THERMISTOR
RTH
U−Phase Current
V−Phase Current
W−Phase Current
Input Signal for
Short−Circuit Protection
Temp. Monitoring
NOTES:
11. To avoid malfunction, the wiring of each input should be as short as possible. (less than 2−3 cm).
12.V output is open−drain type. The signal line should be pulled up to the positive side of the MCU or control power supply with a resistor
FO
that makes I up to 1 mA.
SP15
FO
13.C
of around seven times larger than bootstrap capacitor C
is recommended.
BS
14.Input signal is active−HIGH type. There is a 5 kW resistor inside the IC to pull−down each input signal line to GND. RC coupling circuits
is recommended for the prevention of input signal oscillation. R C time constant should be selected in the range 50 ∼ 150 ns
S
PS
(recommended R = 100 W, C = 1 nF).
S
PS
15.To prevent errors of the protection function, the wiring around R and C should be as short as possible
F
SC
16.In the short−circuit protection circuit, please select the R C time constant in the range 1.5 ∼ 2 ms. Do enough evaluation on the real
F
SC
system because short−circuit protection time may vary wiring pattern layout and value of the R C time constant.
F
SC
17.The connection between control GND line and power GND line which includes the N , N , N must be connected to only one point.
U
V
W
Please do not connect the control GND to the power GND by the broad pattern. Also, the wiring distance between control GND and power
GND should be as short as possible.
18.Each capacitor should be mounted as close to the pins of the Motion SPM 45 product as possible.
19.To prevent surge destruction, the wiring between the smoothing capacitor and the P & GND pins should be as short as possible. The
use of a high−frequency non−inductive capacitor of around 0.1 ∼ 0.22 ms between the P and GND pins is recommended.
20.Relays are used in almost every systems of electrical equipment in home appliances. In these cases, there should be sufficient distance
between the MCU and the relays.
21.The zener diode or transient voltage suppressor should be adopted for the protection of ICs from the surge destruction between each
pair of control supply terminals (recommended zener diode is 22 V/1 W. which has the lower zener impedance characteristic than
about 15 W).
22.Please choose the electrolytic capacitor with good temperature characteristic in C . Also choose 0.1 ∼ 0.2 mF R−category ceramic
BS
capacitors with good temperature and frequency characteristics in C
.
BSC
Figure 16. Typical Application Circuit
SPM is registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
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13
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SPMAA−C26 / 26LD, PDD STD CERAMIC TYPE, LONG LEAD DUAL FORM TYPE
CASE MODFC
ISSUE O
DATE 31 JAN 2017
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13555G
SPMAA−C26 / 26LD, PDD STD CERAMIC TYPE, LONG LEAD DUAL
PAGE 1 OF 1
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